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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Blowing polar skyrmion bubbles in oxide superlattices

Particle-like topological structures such as skyrmions and vortices have garnered ever-increasing interests due to their rich physical insights and potential broad applications in spintronics. Here, in this work, we discover the reversible switching between polar skyrmion bubbles and ordered vortex arrays in ferroelectric superlattices under an electric field, reminiscent of the Plateau-Raleigh instability in fluid mechanics. An electric field phase diagram is constructed, showing a wide stability window for the observed polar skyrmions. A “volcano”-like pontryagin density distribution is formed, indicating the formation of a smooth circular skyrmion. The topological charge Q at different applied field is calculated, verifying the field-driven topological transition between Q = 0 and Q = ±1 states. This study is a demonstration for the computational design of field-induced topological phase transitions, giving promise for the design of next-generation nanoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of substitutional doping and disorder on the phase stability, magnetism, and half-metallicity of Heusler alloys

Spintronics is the fast growing field that will play a key role in optimizing power consumption, memory, and processing capabilities of nanoelectronic devices. Heusler alloys are potential candidates for application in spintronics due to their room temperature (RT) half-metallicity, high Curie temperature, low lattice mismatch with most substrates, and strong control on electronic density of states at Fermi level. In this work, we investigate the effect of substitutional doping and disorder on the half-metallicity, phase stability, and magnetism of Heusler alloys using density functional theory methods. Our study shows that electronic and magnetic properties of half/full-Heusler alloys can be tuned by changing electron-count through controlled variation of chemical compositions of alloying elements. We provide a detailed discussion on the effect of substitutional doping and disorder on the tunability of half-metallic nature of Co 2 MnX and NiMnX based Heusler alloys, where X represents group 13–16 and period 3–6 elements of the periodic table. Based on the idea of electron count and disorder, we predicted a possible existence of thermodynamically stable half-metallic multicomponent bismuthides, for example, (CuNi 3 )Mn 4 Bi 4 and (ZnNi 7 )Mn 8 Bi 8 , through substitution doping at Ni site by specific Cu and Zn composition in half-Heusler NiMnBi. We believe that the design guide based on electron-counts presented for half-metals will play a key role in electronic-structure engineering of novel Heusler alloys for spintronic application, which will accelerate the development and synthesis of novel materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Dynamic control of ferroionic states in ferroelectric nanoparticles

The polar states of uniaxial ferroelectric nanoparticles interacting with a surface system of electronic and ionic charges with a broad distribution of mobilities is explored, which corresponds to the experimental case of nanoparticles in solution or ambient conditions. The nonlinear interactions between the ferroelectric dipoles and surface charges with slow relaxation dynamics in an external field lead to the emergence of a broad range of paraelectric-like, antiferroelectric-like ionic, and ferroelectric-like ferroionic states. The crossover between these states can be controlled not only by the static characteristics of the surface charges, but also by their relaxation dynamics in the applied field. Obtained results are not only promising for advanced applications of ferroelectric nanoparticles in nanoelectronics and optoelectronics, they also offer strategies for experimental verification.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Surface-assisted DNA self-assembly: An enzyme-free strategy towards formation of branched DNA lattice

DNA based self-assembled nanostructures and DNA origami has proven useful for organizing nanomaterials with firm precision. However, for advanced applications like nanoelectronics and photonics, large-scale organization of self-assembled branched DNA (bDNA) into periodic lattices is desired. In this communication for the first time we report a facile method of self-assembly of Y-shaped bDNA nanostructures on the cationic surface of Aluminum (Al) foil to prepare periodic two dimensional (2D) bDNA lattice. Particularly those Y-shaped bDNA structures having smaller overhangs and unable to self-assemble in solution, they are easily assembled on the surface of Al foil in the absence of ligase. Field emission scanning electron microscopy (FESEM) analysis shows homogenous distribution of two-dimensional bDNA lattices across the Al foil. When the assembled bDNA structures were recovered from the Al foil and electrophoresed in nPAGE only higher order polymeric bDNA structures were observed without a trace of monomeric structures which confirms the stability and high yield of the bDNA lattices. Therefore, this enzyme-free economic and efficient strategy for developing bDNA lattices can be utilized in assembling various nanomaterials for functional molecular components towards development of DNA based self-assembled nanodevices. - Highlights: • Al foil surface-assisted self-assembly of monomeric structures into larger branched DNA lattice. • FESEM study confirms the uniform distribution of two-dimensional bDNA lattice structures across the surface of Al foil. • Enzyme-free and economic strategy to prepare higher order structures from simpler DNA nanostructures have been confirmed by recovery assay. • Use of well proven sequences for the preparation of pure Y-shaped monomeric DNA nanostructure with high yield.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2023

Production of graphene-derivatives using organic molecules for supercapacitors and beyond

Graphene is rapidly expanding for applications ranging from nanoelectronics to space exploration. A material with such enormous potential requires a variety of synthesis methods. Here, we report a library of relatively sustainable redox-active organic molecules for the reduction of graphene oxide (GO) namely N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD), 7,7,8,8-tetracyanoquinodimethane (TCNQ), ferrocene (Ferro), and decamethylferrocene (DFerro). Among them, the reduction of GO using TMPD starts even with simple hand-shaking for just a few minutes. By controlling the sonication time under ambient conditions, one can control the electronic properties of the reduced graphene oxide (rGO). The resulting free-standing films delivered a capacitance of 185 F/g when tested them as supercapacitor electrodes. We also demonstrated that TMPD can exfoliate graphite into few-layer graphene sheets with simple sonication. Here, we further show that under mild heating, these molecules can serve as dopants during the reduction process to produce nitrogen-doped graphene. Our results may guide researchers to explore sustainable organic molecules for the large-scale production of graphene-based materials for diverse applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Formation mechanism of two-dimensional hexagonal silica on SiO 2 /Si substrate

In this study, owing to their remarkable electronic properties, silica ultrathin films have been utilized as an insulating layer in nanoelectronics systems. Silica films have been epitaxially grown on different substrates using various synthesis methods. Among all fabrication approaches, chemical vapor deposition has long been an advanced method for synthesizing two-dimensional (2D) materials due to its ability to ensure precise stacking control and minimize contamination between layers. This study harnessed the potential of CVD to atomically fabricate thin layered 2D silica on a SiO 2 /Si substrate. Significantly, a unique combination of multiple transition metals and salt as the catalysts aided the formation of 2D silica for the first time. Salt is a crucial catalyst in promoting the evaporation of high-melting-point metal catalysts, resulting in hexagonal nucleation sites on the SiO 2 /Si wafer. By meticulously controlling growth parameters, a distinctive hexagonal structure was obtained. Correspondingly, this work delves into the growth mechanism of 2D silica, as evidenced by experiments involving salt alone and individual transition metals. Group VB transition metals played a prominent role in achieving the hexagonal structure compared to their group IVB counterparts. This research offers insight into the formation and growth mechanism of 2D silica, expanding the understanding of silica nanostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tunneling field-effect junctions with WS 2 barrier

Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect junctions (TFEJ) formed from atomic precision vertical stacks of graphene and insulating crystals of a few atomic layers in thickness. Here we report first-principles study of the electronic properties of the Graphene/WS 2 /Graphene sandwich structure revealing strong interface effects on dielectric properties and predicting a high ON/OFF ratio with an appropriate WS 2 thickness and a suitable range of the gate voltage. Both the band spin-orbit coupling splitting and the dielectric constant of the WS 2 layer depend on its thickness when in contact with the graphene electrodes, indicating strong influence from graphene across the interfaces. The dielectric constant is significantly reduced from the bulk WS 2 value. The effective barrier height varies with WS 2 thickness and can be tuned by a gate voltage. These results are critical for future nanoelectronic device applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Structural, electronic and magnetic properties of chevron-type graphene, BN and BC{sub 2}N nanoribbons

Graphene nanoribbons are predicted to be essential components in future nanoelectronics. The size, edge type, arrangement of atoms and width of nanoribbons drastically change their properties. Boronnitrogencarbon nanoribbons properties are not fully understood so far. In the present contribution it was investigated the structural, electronic and magnetic properties of chevron-type carbon, boron nitride and BC{sub 2}N nanoribbons, using first-principles calculations. The results indicate that the structural stability is closely related to the discrepancies in the bond lengths, which can induce structural deformations and stress. Such nanoribbons present a wide range of electronic behaviors, depending on their composition and particularities of the atomic arrangement. A net magnetic moment is found for structures that present carbon atoms at the nanoribbon borders. Nevertheless, the calculated magnetic moment depends on the peculiarities of the symmetric arrangement of atoms and imbalance of carbon atoms between different sublattices. It was found that all structures which have a significant energy gap do not present magnetic moment, and vice-versa. Such result indicates the strong correlation between the electronic and magnetic properties of the chevron-type nanoribbons. - Highlights: • Small discrepancies between distinct bond lengths can influence the formation energy of the BC{sub 2}N nanoribbons. • The electronic behavior of the BC{sub 2}N chevron-type nanoribbons depends on the atomic arrangement and structural symmetries. • There is a strong correlation between the electronic and magnetic properties for the BC{sub 2}N structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Substitutional doping of 2D transition metal dichalcogenides for device applications: Current status, challenges and prospects

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a class of materials with exceptional electronic, optical, and mechanical properties, making them highly tunable for diverse applications in nanoelectronics, optoelectronics, and catalysis. Here, this review focuses on substitutional doping of TMDs, a key strategy to tailor their properties and enhance device performance, with a focus on its applications over the past five years (2019–2024). We delve into both theoretical and experimental doping approaches, including established methods like chemical vapor transport (CVT) and chemical vapor deposition (CVD) alongside liquid phase exfoliation (LPE) and post-synthesis treatments. Advanced growth techniques are also explored. Challenges like dopant uniformity, concentration control, and stability are addressed. The influence of various dopants on the electronic band structure, carrier concentration, and defect engineering is analyzed in detail. We further explore recent advancements in utilizing doped TMDs for field-effect transistors (FETs), photodetectors, sensors, photovoltaics, optoelectronic devices, energy storage and conversion, and even quantum computers. By examining both the potential and limitations of substitutional doping, this review aims to propel future research and technological advancements in this exciting field.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Anisotropic topological surface states in thin-film monoclinic Ag 2 Se

Silver chalcogenide systems have recently attracted significant attention due to their promising topological insulating properties. Here we conducted systematic low-temperature local scanning tunneling microscopy/spectroscopy and first-principles studies on the surface states of monoclinic Ag 2 Se thin films grown using molecular beam epitaxy. Through the use of quasi-particle interference patterns, we have observed evidence for topological surface states on the selenium-terminated surfaces with different types of defect densities. The results of ab initio calculations confirm the existence of nontrivial topological surface states in the monoclinic Ag 2 Se structure, for which such properties have not been previously reported. The energy dispersion determined using voltage-dependent standing wave patterns suggests that these topological states have an anisotropic Dirac cone structure. In conclusion, this discovery may lead to new applications for monoclinic Ag 2 Se in the rapidly growing fields of nanoelectronics and spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Facile integration of low-cost black phosphorus in solution-processed organic solar cells with improved fill factor and device efficiency

Black phosphorus (BP) as a promising two-dimensional (2D) material has gained great attention in nanoelectronic devices because of its intrinsic semiconductor characteristics. However, the poor material availability and solution processability have been major roadblocks that hinder its wider application in microelectronics. Herein, readily available, lost-cost BP was utilized as an effective component that was integrated via a facile solution process for the fabrication of bulk heterojunction organic solar cells (OSCs). An impressive fill factor (FF) of 74.2% and power conversion efficiency (PCE) of 10.5% were realized in the OSCs incorporating 10 wt% of BP in the active layer of the benchmark polymer donor PTB7-Th and PC71BM acceptor, corresponding to a 20% PCE enhancement compared to the BP-free binary devices. The efficiency enhancement can be attributed to BP's high hole carrier mobility that facilitates better carrier extraction and suppression of the recombination. BP has been further demonstrated to be effective in additional solar cells based on other photovoltaic (PV) materials, including non-fullerene OSCs. The successful incorporation of the inexpensive BP in the solution-based fabrication of OSCs opens the door for its application in high performance, low cost flexible electronics.

14 SOLAR ENERGY↗
DOE OSTI2016

Quantitative 3D electromagnetic field determination of 1D nanostructures from single projection

One-dimensional (1D) nanostructures have been regarded as the most promising building blocks for nanoelectronics and nanocomposite material systems as well as for alternative energy applications. Although they result in confinement of a material, their properties and interactions with other nanostructures are still very much three-dimensional (3D) in nature. In this work, we present a novel method for quantitative determination of the 3D electromagnetic fields in and around 1D nanostructures using a single electron wave phase image, thereby eliminating the cumbersome acquisition of tomographic data. Using symmetry arguments, we have reconstructed the 3D magnetic field of a nickel nanowire as well as the 3D electric field around a carbon nanotube field emitter, from one single projection. The accuracy of quantitative values determined here is shown to be a better fit to the physics at play than the value obtained by conventional analysis. Moreover the 3D reconstructions can then directly be visualized and used in the design of functional 3D architectures built using 1D nanostructures.

1D nanostructures↗
DOE OSTI2020

Atomic Layer Deposition of Pt on the Surface Deactivated by Fluorocarbon Implantation: Investigation of the Growth Mechanism

Selective atomic layer deposition (ALD) using surface-controlled reactivity is attracting a great deal of attention as a simple bottom-up patterning process that can provide both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Previously, we reported topographically selective deposition through Pt ALD using a MeCpPtMe 3 precursor and an O 2 counter reactant on fluorocarbon (CF x )-modified surfaces; however, gradual loss of selectivity in the CF x -modified regions was observed during the Pt ALD process. This work develops a fundamental understanding of the microscopic growth mechanisms of Pt ALD on the CF x -modified surface using a combination of experimental analyses and theoretical methods. The Pt growth characteristics on the CF x surface are investigated within a temperature window from 225 to 350 °C, and the results show a sharp sensitivity to growth temperature, with significant Pt growth occurring at temperatures above 300 °C. Through density functional theory (DFT) calculations, the reaction energies for adsorption of oxygen and the MeCpPtMe 3 precursor as well as formation of reaction products of CF x degradation are determined. Based on experimental results in conjunction with the DFT calculations, we show that while lower temperature Pt ALD (<300 °C) on CF x -modified surfaces can be significantly retarded because of a lack of MeCpPtMe 3 chemisorption, the surface reaction pathways for Pt ALD on CF x -modified surfaces at temperatures above 300 °C can proceed through oxygen adsorption and CF 4 desorption followed by Pt nucleation in CF x -degraded regions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Selective Transfer of Rotationally Commensurate MoS 2 from an Epitaxially Grown van der Waals Heterostructure

We report that large-scale synthesis of high-quality two-dimensional (2D) semiconductors is critical for their incorporation in emerging electronic and optoelectronic technologies. In particular, chemical vapor deposition (CVD) of transition-metal dichalcogenides (TMDs) via van der Waals epitaxy on epitaxial graphene (EG) leads to rotationally commensurate TMDs in contrast to randomly aligned TMDs grown on amorphous oxide substrates. However, the interlayer coupling between TMDs and EG hinders the investigation and utilization of the intrinsic electronic properties of the resulting TMDs, thus requiring their isolation from the EG growth substrate. To address this issue, we report here a technique for selectively transferring monolayer molybdenum disulfide (MoS 2 ) from CVD-grown MoS 2 -EG van der Waals heterojunctions using copper (Cu) adhesion layers. The choice of Cu as the adhesion layer is motivated by density functional theory calculations that predict the preferential binding of monolayer MoS 2 to Cu in contrast to graphene. Atomic force microscopy and optical spectroscopy confirm the large-scale transfer of rotationally commensurate MoS 2 onto SiO 2 /Si substrates without cracks, wrinkles, or residues. Furthermore, the transferred MoS 2 shows high performance in field-effect transistors with mobilities of up to 30 cm 2 /V s and on/off ratios of up to 10 6 at room temperature. Lastly, this transfer technique can likely be generalized to other TMDs and related 2D materials grown on EG, thus offering a broad range of benefits in nanoelectronic, optoelectronic, and photonic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Theoretical and Experimental Advances in High-Pressure Behaviors of Nanoparticles

Using compressive mechanical forces, such as pressure, to induce crystallographic phase transitions and mesostructural changes while modulating material properties in nanoparticles (NPs) is a unique way to discover new phase behaviors, create novel nanostructures, and study emerging properties that are difficult to achieve under conventional conditions. In recent decades, NPs of a plethora of chemical compositions, sizes, shapes, surface ligands, and self-assembled mesostructures have been studied under pressure by in-situ scattering and/or spectroscopy techniques. As a result, the fundamental knowledge of pressure–structure–property relationships has been significantly improved, leading to a better understanding of the design guidelines for nanomaterial synthesis. In the present review, we discuss experimental progress in NP high-pressure research conducted primarily over roughly the past four years on semiconductor NPs, metal and metal oxide NPs, and perovskite NPs. We focus on the pressure-induced behaviors of NPs at both the atomic- and mesoscales, inorganic NP property changes upon compression, and the structural and property transitions of perovskite NPs under pressure. We further discuss in depth progress on molecular modeling, including simulations of ligand behavior, phase-change chalcogenides, layered transition metal dichalcogenides, boron nitride, and inorganic and hybrid organic–inorganic perovskites NPs. These models now provide both mechanistic explanations of experimental observations and predictive guidelines for future experimental design. Here, we conclude with a summary and our insights on future directions for exploration of nanomaterial phase transition, coupling, growth, and nanoelectronic and photonic properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Inverse Design of a Graphene-Based Quantum Transducer via Neuroevolution

Here we introduce an inverse design framework based on artificial neural networks, genetic algorithms, and tight-binding calculations, capable to optimize the very large configuration space of nanoelectronic devices. Our non-linear optimization procedure operates on trial Hamiltonians through superoperators controlling growth policies of regions of distinct doping. We demonstrate that our algorithm optimizes the doping of graphene-based three-terminal devices for valleytronics applications, monotonously converging to synthesizable devices with high merit functions in a few thousand evaluations (out of similar or equal to ≃ 2 3800 possible configurations). The best-performing device allowed for a terminal-specific separation of valley currents with similar or equal to ≃ 96% (≃ 94%) K(K') valley purity. Importantly, the devices found through our non-linear optimization procedure have both a higher merit function and higher robustness to defects than the ones obtained through geometry optimization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Carbyne fiber synthesis within evaporating metallic liquid carbon

Carbyne (e.g., linear chains of sp-bonded carbon) has been the subject of intense research focus due to its presence in astrophysical bodies, as well as its potential for use as a nanoelectronic device and superhard material. In this work, we discuss the formation of carbyne fiber bundles over a nanosecond time scale in laser pulse melting studies, using a previously determined density functional tight binding model for carbon coupled with a new correction for the dispersion energy. We determine our dispersion energy model by optimizing a modified Lennard-Jones potential to an experimentally determined equation of state for graphite, yielding excellent results for the bulk modulus and density under ambient conditions. We then simulate previous experiments by heating graphite to high temperature, followed by expanding the ensuing liquid phase to low density. Our results indicate that the initial, hot liquid phase mainly consists of sp2-bonded carbon atoms, which form a system of sp-bonded strands bound together via dispersion interactions upon achieving low density and temperature. Lastly, the high computational efficiency of our approach allows for direct comparison with experiments that span a wide range of thermodynamic conditions and can help determine parameters for synthesis of carbon-based materials with potentially exotic properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

First-Principles Dissociation Pathways of BCl 3 on the Si(100)-2 × 1 Surface

BCl 3 is a promising acceptor precursor for atomic-precision δ-doping of silicon, as it has been observed to rapidly dissociate into boron doped into the silicon surface and surface chlorine, which can be removed upon annealing. The chemical pathway and the resulting kinetics, through which BCl 3 adsorbs and dissociates on silicon, however, have only been partially explained. Here, in this work, we use density functional theory to expand the dissociation reactions of BCl 3 to include reactions that take place across multiple silicon dimer rows and reactions which end in a bare B atom either at the surface, substituted for a surface silicon, or in a subsurface position. We further simulate the resulting scanning tunneling microscopy images for each of these BCl x dissociation fragments, demonstrating that they often display distinct features that may allow for relatively confident experimental identification. Finally, we input the full dissociation pathway for BCl 3 into a kinetic Monte Carlo model, which simulates realistic reaction pathways as a function of environmental conditions, such as the pressure and temperature of dosing. We find that BCl 2 is broadly dominant at low temperatures, while high temperatures and ample space on the silicon surface for dissociation encourage the formation of bridging BCl fragments and B substitutions on the surface. This work provides the chemical mechanisms for understanding atomic-precision doping of Si with B, enabling a number of relevant quantum applications, such as bipolar nanoelectronics, acceptor-based qubits, and superconducting Si.

Campbell, Quinn T. [Sandia National Laboratories (↗