Search NASA⌕ Search

SEARCH · Search NASA

Results for “PROTON IRRADIATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

CO2 laser annealing of 50-microns-thick silicon solar cells

A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.

Walker, F. E.↗
DOE OSTI2025

Defect-induced phonon-resonant scattering and its influence on thermal transport of irradiated thorium-dioxide

Thermal transport in proton irradiated thorium-dioxide (ThO 2 ) is investigated. Using a combination of experiments and first-principles computational framework, the role of lattice defects on thermal conductivity is analyzed. A resonant-phonon scattering mechanism beyond the traditionally considered Rayleigh scattering is found to significantly influence low-temperature thermal transport in the presence of irradiation-induced point defects. The existence of localized phonon modes associated with irradiation-induced defects is suggested by the inability of the first-principles based thermal conductivity model—which considers only three-phonon interactions and phonon-defects scattering using the Tamura formalism—to predict the experimental results, unless a resonant scattering mechanism is included. The emergence of additional peaks in the Raman spectra in the proximity of phonon-resonant frequency provides further evidence for the existence of localized modes. Coupled with a microstructure evolution model, this analysis enables more accurate analysis for contrasting the contributions of different phonon scattering mechanisms across all irradiation doses and temperatures.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1977

Ionization induced damage in crystalline silicon

Close examination of the interaction of the energetic knock-on atoms with the local lattice environment reveals a damage mechanism which does satisfy the experimental data on proton irradiation of silicon. A proton-atom interaction with high energy transfer is considered where the proton path is delineated by a trail of ionization, and the silicon ion path is characterized by much heavier ionization terminating in a dense displacement cluster. At collision, many of the silicon electrons are stripped off, and the resulting energetic ion subsequently loses energy rapidly by Coulomb interaction with bound electrons. The rate of energy loss depends on the charge state and velocity of the knock-on ion. For ion energies in excess of 1 MeV, the intensity of ionization is sufficient to permit lattice atoms, stripped of their binding electrons, to reorient randomly before having an opportunity to recombine with electrons and re-establish the lattice. The path of a knock-on ion thus becomes a thin cylinder of amorphous material within the crystal. Amorphous silicon has a Fermi level closer to mid-band than does single crystal silicon, and a strong field therefore, results around this damaged region. The field produces a large depletion region, representing a very large capture cross section for minority carriers.

Meulenberg, A., Jr.↗
DOE OSTI2024

Understanding Formation of Irradiation-Induced Defects through 4D-STEM, Electron Tomography, and WBDF-STEM

A major challenge in advancing nuclear materials for next-generation fission and proposed fusion reactors is to comprehensively understand the formation of irradiation-induced defects. Here it is essential to correlate the evolution of irradiation-induced defects and the degradation of mechanical properties, as they collectively dictate the material's lifespan and ensure nuclear safety. Scanning transmission electron microscopy (STEM) based techniques have emerged as indispensable tools for irradiation-induced defect characterization, offering high spatial resolution imaging and chemical analysis, such as electron energy loss spectroscopy (EELS) and energy dispersive X-ray spectroscopy (EDXS). These techniques have been effectively used to obtain an atomic-scale view of the defect structure. Recent advances in electron microscopy, particularly in 4D-STEM, offer detailed insight into microstructural evolution by capturing full 2D diffraction patterns at every pixel position. Using high-speed direct electron detectors, this technology generates a four-dimensional dataset, overcoming the limitations of traditional STEM imaging.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Testing of solar cell covers and encapsulants conducted in a simulated space environment

The materials included in the evaluation were 0211 micro-sheet, FEP-A used as a cover and as an adhesive, DC 93-500 adhesive, PFA "hard coat" used as a cover, GE 615/UV-24 used as a cover, GR 650 used as a cover, and electrostatically bonded 7070 glass. The test environments were 1 MeV electron irradiation interspersed with thermal cycling, 0.5 MeV proton irradiation interspersed with thermal cycling and UV exposure interspersed with thermal cycling. Summary data is given describing the response of the test materials both visually and electrically to the three different environments.

Russell, D. A.↗
DOE OSTI2024

Understanding vortex dynamics in CaK(Fe,Ni) 4 As 4 and Ba(Fe,Co) 2 As 2 single crystals under the influence of random point disorder

We report on the influence of doping on vortex dynamics in 3 MeV proton-irradiated single crystals of CaK(Fe 1–x Ni x ) 4 As 4 (1144, x = 0.015, 0.025, and 0.03) and Ba(Fe 1–x Co x ) 2 As 2 (x = 0.04, 0.062, 0.066 and 0.074). Non-irradiated crystals of the 1144 system display superconducting critical temperatures ranging from 31 K for x = 0.015–20.5 K, as doping increases to 0.03. On the other hand, pristine crystals of the 122 system show T c values between 14.6 and 23.6 K, with the maximum T c occurring at intermediate doping levels. The fluence was set at 3 × 10 16 p cm –2 , resulting in a decrease in the T c by around 1.5 K for all samples and significantly affecting the vortex dynamics by reducing the flux creep relaxation compared to previously reported values for unirradiated crystals. Parameters such as vortex pinning energy U 0 and the glassy exponent μ dependencies on doping and magnetic field strength are identified. For the 1144 system, U 0 reaches values approaching 500 K for small fields in samples with T c = 29.3 K (x = 0.015), systematically decreasing to around 200 K as T c falls below 20 K. Furthermore, U 0 decreases as the field increases to 3 T for the same sample, varying from approximately 250 K to 100 K as T c decreases. These changes are typically accompanied by modifications in μ, gradually increasing from values around 1 towards 1.5, corresponding to small bundle relaxation in the collective creep theory. Despite differences in the substitutional disorder and magnetic phase diagram with respect to the 1144 system, the results for 122 single crystals follow a similar tendency in which U 0 usually reduces and μ increase rise as the applied magnetic field is increased. Due to moderate U 0 in these systems (few hundreds of kelvins), the resulting decay of persistent current at liquid helium temperatures is primarily determined by a balance between U 0 and bundle size contribution. Furthermore, these findings provide valuable insights for potential applications of these systems, particularly in the context of intrinsic superconducting parameters and the resulting pinning landscape.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1987

Radiation performance of AlGaAs concentrator cells and expected performance of cascade structures

Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated.

Curtis, Henry B.↗
NASA NTRS1987

Radiation performance of AlGaAs and InGaAs concentrator cells and expected performance of cascade structures

Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1-MeV electrons and 37-MeV protons. These cells are candidates for individual cells in a cascade structure. Data are presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AM0. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series-connected and separately connected structures are investigated.

Curtis, H. B.↗