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DOE OSTI2026

UV-Induced Degradation and Associated Metastability in TOPCon Photovoltaic Modules: Understanding Kinetics and Cell Variance

Tunnel oxide passivated contact (TOPCon) silicon photovoltaic (PV) modules are dominating the PV market, but they may be susceptible to degradation under ultraviolet (UV)-containing light. Quantifying the impacts of UV-induced degradation (UVID) is complicated by an associated metastability causing further degradation under dark storage and rapid recovery under sunlight. Here, we study modules that have -2.3% to -3.2% nonrecoverable UVID loss after 60 kWh/m2 dose of 340 nm light and additional recoverable loss under dark storage. We use in situ electroluminescence (EL) imaging to characterize the post-UVID metastability at the module level. The cell-by-cell dark degradation and recovery kinetics span a wide range from +6% to -70% changes in EL intensity after 520 h of dark storage, which returns to +- 4% of the initial post-UVID EL intensity after illumination. The kinetics follow double exponential rates with dark storage degradation time constants of 345 and 45 h, and UV light recovery time constants of 5 min and 36 s. We propose that this is consistent with prior reports of kinetics for light-soaking metastability in Al2O3 passivation. Finally, we further show that cells having high UVID also have injection-dependent effective carrier lifetimes and significant intra-cell variance, suggesting possible origins of processing inconsistency.

14 SOLAR ENERGY↗

DOE OSTI2021

Voltage Loss Comparison in CdSe/CdTe Solar Cells and Polycrystalline CdSeTe Heterostructures

Cd(Se)Te solar cells have considerable headroom to increase voltage. Voltage losses occur due to incomplete absorption above bandgap E_g and band tail absorption below E_g; such losses are quantified using radiative voltage. The largest voltage losses are attributed to nonradiative recombination, which is quantified via carrier lifetime and radiative efficiency. We compare radiative voltage, radiative efficiency, and carrier lifetime for Cu-doped CdSe/CdTe solar cells and for undoped polycrystalline CdSeTe heterostructures passivated with Al_2O_3. Using external quantum efficiency spectrum and a CdSeTe absorption spectrum obtained from absolute photoluminescence (PL), we show that the radiative voltage is greater than 1.1 V. Time-resolved PL experiments and modeling show that a major part of voltage losses can be attributed to recombination in the absorber bulk. The front interface recombination makes a larger impact within the first few nanoseconds after pulsed excitation, and the comparison of time-gated and time-integrated PL can be used to assess relative contributions of front interface and bulk recombination rates.

14 SOLAR ENERGY↗

DOE OSTI2022

Triple Emission of 5'-( para -R-Phenylene)vinylene-2-(2'-hydroxyphenyl)benzoxazole (PVHBO). Part I: Dual Emission from the Neutral Species

The effects of 5'-(para-R-phenylene)vinylene (PV) substituents on the emission properties of 2-(2'-hydroxyphenyl)benzoxazole (HBO) are analyzed using steady-state and time-resolved absorption and emission spectroscopies in addition to quantum chemical calculations. All members in the series of PVHBOs are capable of excited-state intramolecular proton transfer (ESIPT) with a solvent sensitivity that is typical of a HBO derivative to produce a normal (aka enol) emission and an excited-state tautomer (aka keto) emission. These two emission bands of the neutral dyes are discussed in the current paper. The intermolecular proton transfer, i.e., the deprotonation, of a PVHBO results in the third band of the triple emission, which is described in the succeeding paper. The placement of an electron-withdrawing substituent R on the PVHBO scaffold increases the intensity of the keto emission relative to the enol emission in hydrogen-bonding solvents. The R substituents do not significantly alter the wavelengths of the enol and keto emission bands, which are located in the blue and green regions, respectively, of the visible spectrum. The ultrafast time-resolved spectroscopies and quantum chemical calculations offer explanations on how the R group and the solvent affect the enol and keto emission properties (i.e., wavelength, lifetime, fluorescence quantum yield, and relative ratio of their emissions). Here, the key findings include the following: (1) the emission energies of both enol and keto forms are not sensitively dependent on the R substituent and (2) the solvent-engaged enol excited state is quenched more efficiently as the R substituent becomes more electron-withdrawing. A PVHBO acts as a fusion of HBO and stilbenoid that intersect at the hydroxyphenyl moiety. Depending on the solvent and other environmental conditions, PVHBOs may exhibit the ESIPT property of HBO or the substituent-dependent emission of stilbenoid. This paper and the succeeding article provide a photophysical model of PVHBOs to explain the wavelengths and relative abundances of the three emission bands (enol, keto, and anion) that these compounds are able to produce. Judicial selection of the environmental factors may drive the emission of a PVHBO into the spectral regions of blue, green, and, in a couple of cases, orange or red.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Contactless Production Testing of Silicon Solar Cells

Critical cost reductions in silicon solar cells are made by minimizing silver usage in their metal contacts. The reason why is both clear and unavoidable—silver is not only expensive, but also a potential limiting resource for scale-up (the PV industry alone used 10.3 % of the global silver supply in 2020 [1]). The result is solar cells with vanishing electrical contact area that are extremely difficult to test prior to module manufacture, when they must be sorted for quality to maximize power output and reliability of the subsequent modules. This project developed a new measurement instrument that enables the transition to solar cells with very low silver content, including cell designs with both minimal busbars and no busbars at all to electrically contact. The resulting instrument at project completion demonstrated the ability to sort cells with comparable—or better—results than existing technology. Compared to existing cell-test instruments, the new tool has minimal contacting requirements, which lowers the maintenance costs and use of consumable parts. We demonstrated innovative, yet pragmatic, solutions for reporting a comprehensive set of measurement results useful for both cell sorting (going forward in the line for module manufacture) and process control (looking backward in the line to identify cell manufacturing issues from wafer to cell-test). In addition to the traditional current-voltage characterization at cell test—short circuit current, open-circuit voltage, power, efficiency and fill factor—the new tool maintains all the advanced parameter characterization of our existing product line such as a substrate doping measurement, carrier recombination (lifetime) analysis, and surface recombination analysis.

14 SOLAR ENERGY↗

DOE OSTI2023

Bishop Paiute Single Family Solar Home Project: Phase 4 (Final Technical Report)

The Bishop Paiute Tribe is committed to energy efficiency, renewable energy, and environmental protection and has a vision to install solar energy systems on all buildings on the Reservation where technically feasible. Through completion of the Bishop Paiute Tribe Residential Solar Program – Phase 4, Bishop Paiute Tribe continued its successful model partnering with non-profit solar installer GRID Alternatives to advance its vision and build energy self-sufficiency on the Bishop Paiute Reservation. The Bishop Paiute Tribe Residential Solar Program – Phase IV deployed 67 kW-AC of new clean, renewable energy through grid-tied, net-metered rooftop solar electric systems installed on a total of 20 (one more than the planned 19) existing owner-occupied, single-family homes for low-income families on the Reservation. This represents nearly 14% of the Reservation’s total “unsolarized” homes. These systems were provided at no cost to the homeowners, who will also receive energy efficiency education to further reduce energy consumption and lower electric bills. GRID led a solar installation for three (3) of the homes where Tribal/community members, were given an opportunity in participating in on-the-roof trainings to gain new skills while installing solar for their low-income community members. Subcontractors through GRID Sub Contractor Partnership Program (GRID SPP) led solar installations for seventeen (17) of the homes. Each installation provided paid employment for a solar trainee trainees hired by the SPP subcontractors as entry level solar installers. It is estimated that the installed 67 kW-AC of solar will produce at least 120,000 kWh/year, displacing at least 30-75% of the 20 homes’ total electricity use for a combined system lifetime electricity cost savings for the low-income homeowners of about $\$$500,000. It is further estimated that the installed renewable energy systems installed will prevent greenhouse gases by about 1,000 tons, equivalent to planting approximately 25,000 trees. Following the successful completed installations, it is expected that the Reservation and surrounding communities will benefit from improved air quality via reduced wood stove use for heating. Cumulatively with other initiatives, the project will result in nearly 40% of the Reservation’s solarizable homes being solarized. Overall, the triple impact of the phase 4 of the Bishop Paiute Tribe Residential Solar Program – Phase 4 is: 1) affordable energy for low-income families; 2) on-site clean energy production, 3) hands on training and paid solar installation work for local tribal/community workers. These impacts will support and grow the Tribe’s energy, economic, environmental, and social self-sufficiency and sovereignty amongst the neediest on the Reservation.

14 SOLAR ENERGY↗

DOE OSTI2026

Data Associated with "Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass"

This is data associated with the publication " Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass " by Aesha P. Patel, Ryan Muzzio, Matthew R. Young, Robert Morrissey, Suresh Chaulagain, B. Edward Sartor, Prabodika N. Kaluarachchi, Christian Velez, Joshua A. Brown, Joel N. Duenow, Stephen Glynn, Michael J. Heben, Zhaoning Song, Nikolas J. Podraza, Adam B. Phillips, Randy J. Ellingson, Matthew O. Reese. All data associated with each figure in the manuscript and supplementary should be available in this dataset. A readme file is also included to provide some guidance. Abstract: Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front-contact instability under higher-temperature processing. Here, the role of front-contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front-contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.

14 SOLAR ENERGY↗

DOE OSTI2021

Changes in Hydrogen Concentration and Defect State Density at the Poly-Si/SiOx/c-Si Interface Due to Firing

We determined the density of defect states of poly-Si/SiOx/c-Si junctions featuring a wet chemical interfacial oxide from lifetime measurements using the MarcoPOLO model to calculate recombination and contact resistance in poly-Si/SiOx/c-Si-junctions. In samples that did not receive any hydrogen treatment, the Dit,cSi is about 2 × 1012 cm-2 eV1 before firing and rises to 3–7 × 1012 cm2 eV1 during firing at measured peak temperatures between 620 °C and 863 °C. To address the question of why AlOx/SiNy stacks in contrast to pure SiNy layers for hydrogenation during firing provides better passivation quality, we have measured the hydrogen concentrations at the poly-Si/SiOx/c-Si interface as a function of AlOx layer thickness and compared these to J0 and calculated Dit,c-Si values. We observe an increase of the hydrogen concentration at the SiOx/c-Si interface upon firing as a function of the firing temperature that exceeds the defect concentrations at the interface several times. However, the AlOx layer thickness appears to cause an increase in hydrogen concentration at the SiOx/c-Si interface in these samples rather than exhibiting a hydrogen blocking property.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2025

Characterization of Performance Degradation Mechanisms in Low-Cost High Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Characterization and mitigating performance limiting defects in Silicon (Si) PV is one of key areas to be addressed to improve PV hardware costs and energy yield in order to lower the levelized cost of energy (LCOE) of installed PV cost to $0.02/kWh. As Si PV cells efficiencies have surpassed 22% and approaching 23%, the recombination at the metal contacts have become the focus point to be addressed. Passivated contact technologies—having a heterojunction with a band-gap larger than silicon between the metal and silicon—have emerged as a great potential for future highand ultrahigh-efficiency solar cells, as it concurrently reduces recombination and increases carrier selectivity, by incorporating thin films within the contact structure. Passivated contact Si solar cell technologies use a wide variety of tunnel layers—playing a crucial role to passivate metal contacts and tunnel charge carriers—including stoichiometric silicon oxide (SiO 2 ) grown by thermal oxidation and Low-Pressure Chemical Vapor Deposition (LPCVD) technique and silicon oxide (SiO x ) by hot nitric acid. However, thorough investigations on understanding the failure and performance degradation mechanisms associated with tunnel layers are still limited to date. Unlocking those degradation characteristics in crucial tunnel layers could improve the reliability and energy yield of passivated contact Si solar cells. Besides, the technique of growing aforementioned tunneling layers are low throughput, and requires high temperature processes and/or a vacuum environment. In this project, we investigated the performance degradation mechanisms of a low-cost high-throughput ozonated oxide (DI-O 3 ) tunnel layer for the passivated contact Si solar cells.

14 SOLAR ENERGY↗

DOE OSTI2020

Activation Energy for Solder Bond Degradation: Thermal Cycling of Field-aged Modules at Multiple Upper Temperatures

The reliability of solder joints in the solar cell metallization-interconnect system influences the lifetime of photovoltaic modules. Two field-aged modules-one with Sn 62 Pb 36 Ag 2 solder at the solder joints (Solarex MSX 60), and the other with the standard Sn 60 Pb 40 solder (Siemens M55)-were subjected to a modified thermal cycling (TC) test of IEC 61215. Three sections in each module were maintained at 85 degrees C, 95 degrees C, and 105 degrees C during the 15-minute high temperature dwell time. Current equivalent to the module short-circuit current was injected through the module when the chamber temperature was above 25 degrees C to simulate regular field operation. This novel approach aims to induce thermomechanical fatigue (TMF) at the solder joints and intermetallic compound (IMC) formation at the metal/solder interfaces. The activation energy (E a ) for solder bond degradation was calculated based on the series resistance (R s ) increase in TC testing rather than power drop to avoid the effect of confounding variables. Module-level R s increase in MSX 60 module after TC800 cycles and in M55 module after TC400 cycles was 1.22% and 183.7%, respectively. The E a determined for the module with 2wt% Ag is 0.24 eV and for that with the standard solder is 0.27 eV. The solder bond degradation seems to have been driven by TMF rather than IMC formation for both modules.

14 SOLAR ENERGY↗

DOE OSTI2024

Analyzing the impact of design factors on solar module thermomechanical durability using interpretable machine learning techniques

Solar modules in utility-scale systems are expected to maintain decades of lifetime to rival conventional energy sources. However, cyclic thermomechanical loading often degrades their long-term performance, highlighting the importance of effective design to mitigate thermal expansion mismatches between module materials. Given the complex composition of solar modules, isolating the impact of individual components on overall durability remains a challenging task. In this work, we analyze a comprehensive data set that comprises bill-of-materials (BOM) and thermal cycling power loss from 251 distinct module designs to identify the predominant design factors and their impacts on the thermomechanical durability of modules. The methodology of our analysis combines machine learning modeling (random forest) and Shapley additive explanation (SHAP) to correlate design factors with power loss and interpret the model’s decision-making. The interpretation reveals that silicon type (monocrystalline or polycrystalline), encapsulant thickness, busbar numbers, and wafer thickness predominantly influence the degradation. With lower power loss of around 0.6% on average in the SHAP analysis, monocrystalline cells present better durability than polycrystalline cells. This finding is further substantiated by statistical testing on our raw data set. The SHAP analysis also demonstrates that while thicker encapsulants lead to reduced power loss, further increasing their thickness over around 0.6 to 0.7 mm does not yield additional benefits, particularly for the front side one. In addition, other important BOM features such as the number of busbars are analyzed. This study provides a blueprint for utilizing explainable machine learning techniques in a complex material system and can potentially guide future research on optimizing the design of solar modules.

14 SOLAR ENERGY↗

DOE OSTI2021

Chemical Passivation of Crystalline Si by Al 2 O 3 Deposited Using Atomic Layer Deposition: Implications for Solar Cells

The atomistic-level mechanism for the chemical passivation of the monocrystalline Si (c-Si) surface with thermally annealed Al 2 O 3 was studied using in situ infrared spectroscopy and photoconductance decay measurements. Al 2 O 3 was deposited on high-lifetime, float-zone c-Si substrates using atomic layer deposition (ALD) from trimethylaluminum (TMA), and H 2 O or O 3 . Surface-sensitive attenuated total reflection Fourier transform infrared spectroscopy was used to monitor the c-Si/Al 2 O 3 interface, as well as the bulk of the Al 2 O 3 film during the entire process. Our results show that some surface Si–H bonds are preserved after the ALD of Al 2 O 3 on H-terminated Si. During the annealing step at 400 °C, restructuring occurs at the c-Si/Al 2 O 3 interface to form interfacial SiO x . Isotope labeling was used to differentiate interfacial SiD bonds on the c-Si surface from H incorporated in Al 2 O 3 . Within the sensitivity of our infrared setup (~10 13 cm –2 ), we did not observe any net migration of atomic H or D from Al 2 O 3 to the c-Si/Al 2 O 3 interface. To isolate the effects of chemical and field-effect passivation of Al 2 O 3 thin films, we carried out surface passivation studies on c-Si/SiO 2 /Al 2 O 3 stacks. We also annealed these stacks in different atmospheres to test the influence of annealing atmospheres on the chemical passivation of c-Si by Al 2 O 3 and observed that O 2 -containing atmosphere led to the best surface chemical passivation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗