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At least 199 records · Page 11

Recent Progress in Quantum Well Infrared Photodetector Research and Development at Jet Propulsion Laboratory

One of the simplest device realizations of the classic particle-in-the-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP). In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128x128 QWIP focal plane array camera, hand-held and palmsize 256x256 long-wavelength QWIP cameras and 648x480 long-wavelength cameras, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.

quantum↗

Integration and performance of large area picosecond photodetectors in the accelerator neutrino neutron interaction experiment

ANNIE, the Accelerator Neutrino Neutron Interaction Experiment, is a 26-ton Gadolinium-loaded water Cherenkov detector located at the Booster Neutrino beam line at Fermilab to mainly measure neutron multiplicity of neutrino interactions and test the performance of Large Area Picosecond Photodetectors (LAPPD). This thesis presents the integration of LAPPD at ANNIE and the preliminary performance analysis. LAPPDs achieved 2.48ns bunch structure resolution, even considering the time of flight and the intrinsic bunch width. The analysis also achieves better than 100ps intrinsic timing resolution, sub-mm position resolution for a single photoelectron, and cm-level resolution in conditional muon track reconstruction.

Feng, Yue [Iowa State U.] (ORCID:0000000332021351)↗

Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors

Abstract Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution‐processable semiconductors such as organic semiconductors (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr 3 perovskite quantum dots (PQDs) and OSCs, fabrication of solution‐processed PQD/OSC PHJs are reported. The phototransistors based on bilayer PQD/PDVT‐10 PHJs show responsivity up to 1.64 × 10 4 A W −1 , specific detectivity of 3.17 × 10 12 Jones, and photosensitivity of 5.33 × 10 6 when illuminated by 450 nm light. Such high photodetection performance is attributed to efficient charge dissociation and transport, as well as the photogating effect in the PHJs. Furthermore, the tri‐layer PDVT‐10/PQD/Y6 PHJs are used to construct photodiodes working in self‐powered mode, which exhibit broad range photoresponse from ultraviolet to near‐infrared, with responsivity approaching 10 −1 A W −1 and detectivity over 10 6 Jones. These results present a convenient and scalable production processes for solution‐processed PHJs and show their great potential for optoelectronic applications.

36 MATERIALS SCIENCE↗

15 cut-off 128x128 Quantum Well Infrared Photodetectors (QWIPS) Camera

We discuss the development and the performance of a very long wavelength (13.5 - 15 128x128 AlGaAs/GaAs multiquantum well infrared imaging system. Highly uniform, high-yield QWIP focal plane array was hybridized to a CMOS multiplexer operating in a direct injection mode. For efficient light coupling an integral random scattering reflector (Random Grating) was incorporated. Due to the high uniformity, excellent imagery, low noise as well as a noise equivalent temperature difference (NE T) of less than 30 mK were obtained when operating around 45 K. Therefore, high image contrast signal to noise ratio has been achieved.

128x128 Photodetectors↗