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NASA NTRS2016

Instrumentation for Examining Microbial Response to Changes In Environmental Pressures

The Automated Adaptive Directed Evolution Chamber (AADEC) is a device that allows operators to generate a micro-scale analog of real world systems that can be used to model the local-scale effects of climate change on microbial ecosystems. The AADEC uses an artificial environment to expose cultures of micro-organisms to environmental pressures, such as UV-C radiation, chemical toxins, and temperature. The AADEC autonomously exposes micro-organisms to selection pressures. This improves upon standard manual laboratory techniques: the process can take place over a longer period of time, involve more stressors, implement real-time adjustments based on the state of the population, and minimize the risk of contamination. We currently use UV-C radiation as the main selection pressure, UV-C is well studied both for its cell and DNA damaging effects as a type of selection pressure and for its related effectiveness as a mutagen; having these functions united makes it a good choice for a proof of concept. The AADEC roadmap includes expansion to different selection pressures, including heavy metal toxicity, temperature, and other forms of radiation.The AADEC uses closed-loop control to feedback the current state of the culture to the AADEC controller that modifies selection pressure intensity during experimentation, in this case culture density and growth rate. Culture density and growth rate are determined by measuring the optical density of the culture using 600 nm light. An array of 600 nm LEDs illuminate the culture and photodiodes are used to measure the shadow on the opposite side of the chamber.Previous experiments showed that we can produce a million fold increase to UV-C radiation over seven iterations. The most recent implements a microfluidic system that can expose cultures to multiple different selection pressures, perform non-survival based selection, and autonomously perform hundreds of exposure cycles. A scalable pump system gives the ability to pump in various different growth media to individual cultures and introduce chemical toxins during experimentation; AADEC can perform freeze and thaw cycles. We improved our baseline characterization by building a custom UV-C exposure hood, a shutter operates on a preset timer allowing the user to set exposure intensity consistently for multiple iterations.

Environment↗

DOE OSTI2020

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

In this paper, the authors report the latest results on their development of superlattice-doped, thinned, backside-illuminated (BSI), 3D-integrated photodiode detectors—a step toward their ultimate goal of demonstrating ultrafast, ultrastable CMOS imaging arrays. As with most silicon-based photodetectors, backside-illumination and backside surface passivation are keys to achieve the highest performance capability. The two-dimensional (2D) doping technique developed at the Jet Propulsion Laboratory (JPL) has proved to result in a highly efficient, highly stable detector response when combined with a variety of detectors. Here, JPL's 2D-doping has been combined with Sandia's BSI photodetectors hybridized with custom fanout wafer via copper Direct Bond Interconnect (DBI®), a technology that is rapidly becoming industry standard for BSI CMOS imaging arrays. The prototype detectors were packaged and evaluated with respect to their response to low energy electrons. The authors find that the responsivity of 2D-doped BSI detectors is higher than devices prepared using other surface passivation techniques (i.e., ion implantation). The success of the work described herein verifies that the 2D-doping processes previously developed for Sandia's frontside-illuminated photodetectors are generally applicable to BSI detectors and demonstrates for the first time that JPL's 2D-doping process is compatible with the Cu-DBI® technology.

Jewell, April D.↗

NASA NTRS2018

Operation of a H4RG-10 in the NASA Goddard Astrophyiscs Divison IR Detector Lab Testbed

Future space and ground based missions in the near infrared are planning to or will utilize the next generation of Teledyne's HxRG detectors, the HgCdTe 4K x 4K array (H4RG). The science cases of such missions will require optimal stability and noise performance. To assess the detailed performance of the H4RG, we have developed a small single detector testbed in NASA Goddard's Astrophysics Division IR detector lab. The testbed operates a H4RG array inside a large dewar using a room temperature Leach controller. The dewar will include two integrating spheres with controlled apertures using NIR LEDs as light sources as well as a calibrated photodiode to precisely measure flux. We present preliminary results of a banded H4RG-10 array on the bench. In the near future, we plan to use the test bed to investigate the specific origins of electronic noise in the test bed, persistence, and other flux dependent nonlinearities.

Mosby, Gregory↗

NASA NTRS2003

High-speed on-chip windowed centroiding using photodiode-based CMOS imager

A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

Pain, Bedabrata↗

NASA NTRS2004

High-speed on-chip windowed centroiding using photodiode-based CMOS imager

Pain, Bedabrata↗

NASA NTRS1999

Active pixel sensor array with multiresolution readout

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Fossum, Eric R.↗

NASA NTRS2009

Metrology System for a Large, Somewhat Flexible Telescope

A proposed metrology system would be incorporated into a proposed telescope that would include focusing optics on a rigid bench connected via a deployable mast to another rigid bench holding a focal-plane array of photon counting photodetectors. Deformations of the deployable mast would give rise to optical misalignments that would alter the directions (and, hence, locations) of incidence of photons on the focal plane. The metrology system would measure the relative displacement of the focusing- optics bench and the focal-plane array bench. The measurement data would be used in post-processing of the digitized photodetector outputs to compensate for the mast-deformation-induced changes in the locations of incidence of photons on the focal plane, thereby making it possible to determine the original directions of incidence of photons with greater accuracy. The proposed metrology system is designed specifically for the Nuclear Spectroscopic Telescope Array (NuSTAR) a proposed spaceborne x-ray telescope. The basic principles of design and operation are also applicable to other large, somewhat flexible telescopes, both terrestrial and spaceborne. In the NuSTAR, the structural member connecting the optical bench and the photodetector array would be a 10-m-long deployable mast, and there is a requirement to keep errors in measured directions of incidence of photons below 10 arc seconds (3 sigma). The proposed system would include three diode lasers that would be mounted on the focusing-optics bench. For clarity, only one laser is shown in the figure, which is a greatly simplified schematic diagram of the system. Each laser would be aimed at a position-sensitive photodiode that would be mounted on the detector bench alongside the aforementioned telescope photodetector array. The diode lasers would operate at a wavelength of 830 nm, each at a power of 200 mW. Each laser beam would be focused to a spot of .1-mm diameter on the corresponding position-sensitive photodiode. To reduce the effect of sunlight on the measurements, a one-stage light baffle and an 830-nm transmission filter of 10-nm bandwidth would be placed in front of the position- sensitive photodiode. For each metrology reading, the output of the position-sensitive detector would be sampled and digitized twice: once with the lasers turned on, then once with the lasers turned off. The data from these two sets of samples would be subtracted from each other to further reduce the effects of sun glints or other background light sources.

Liebe, Carl Christian↗

NASA NTRS1998

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Vasile, Stefan↗

NASA NTRS2019

High Performance GaN/AlGaN Ultraviolet Avalanche Photodiode Detector Technologies

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10(exp 6) and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Sood, Ashok K.↗

NASA NTRS1984

Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

Culik, J.↗

DOE OSTI2022

Geranium Photodiodes for Hard Xray Detection

This report summarizes the investigations engaged at UC Davis under subcontract B632083, as related to the LLNL-LDRD Project “High-Speed X-Ray Imager Arrays.” The first section entails work done within the Electrical and Computer Engineering (ECE) Department. The purpose of the work done so far is to understand photodiode design and which parameters are conducive to the design goals, which are: I: Maximize the detector quantum efficiency. The device must have a quantum efficiency of roughly 5% at 80 keV. II: Minimize temporal response. Collection time is limited to 1ns. All charge must be collected in that time. III: Minimize dark current. In this document, various photodiode parameters and designs are explored, and their impact on these goals are tabulated. In addition to these, various instruments that have been constructed for either testing these parameters or helping teammates with their experiments. The second section entails work done with the Materials Science Engineering (MSE) Department. In accordance with the proposed development of the germanium ROIC backside imagers, a critical step in the micromachining of these devices was the removal of the substrate on which the PIN junctions were epitaxially grown. A common technique for the micromachining of silicon wafers is the use of chemical etching alongside an “etch-stop” layer. In this technique, a chemical etchant will remove material until it reaches the etch-stop layer, at which the etch rate will drop significantly. This high selectivity (ratio of etch rates) allows any unevenness in the initial etching to be effectively smoothed away in the event that part of the wafer surface reaches the etch-stop layer sooner than another. An initial literature review found a paper by Divan et al. in which the authors used ion implantation to dope germanium wafers and achieve selectivity on the order of 100, sufficient for a reliable etch-stop.

42 ENGINEERING↗

NASA NTRS2004

CMOS VLSI Active-Pixel Sensor for Tracking

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 ~ 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The diagonal-switch and memory addresses would be generated by the on-chip controller. The memory array would be large enough to hold differential signals acquired from all 8 windows during a frame period. Following the rapid sampling from all the windows, the contents of the memory array would be read out sequentially by use of a capacitive transimpedance amplifier (CTIA) at a maximum data rate of 10 MHz. This data rate is compatible with an update rate of almost 10 Hz, even in full-frame operation

Pain, Bedabrata↗

NASA NTRS2002

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

Marshall, Paul W.↗

NASA NTRS1982

Integrating 128 element InSb array - Recent results

There has been a continuing evolution toward larger arrays of infrared detectors, and the technology base derived from the Galileo Near Infrared Mapping Spectrometer (NIMS) has been expanded to linear arrays including from 128 to 512 elements. This advance is based on the commercial availability of high-quality InSb photodiodes and 128/256 element FET switch MUX's (multiplexing elements). The present investigation is concerned with an experimental 128-element linear imager using InSb detectors and silicon MUX for readout. Attention is given to detector array electrical characteristics, the detector readout architecture, noise, and special effects.

Bailey, G.↗

NASA NTRS2018

Performance of the QWIP Focal Plane Array for NASA's Landsat 9 Mission

The flight focal plane array (FPA) for the Thermal Infrared Sensor 2 (TIRS-2) instrument, to be flown on Landsat 9, was built and characterized at NASA Goddard Space Flight Center (GSFC). The FPA was assembled using GaAs quantum well infrared photodetector (QWIP) arrays from the same lot as the TIRS instrument on Landsat 8. Each QWIP array is hybridized to an Indigo ISC9803 readout integrated circuit (ROIC) with 640 x 512, 25µm by 25µm pixels. Each QWIP hybrid was tested at the NASA/GSFC Detector Characterization Laboratory (DCL) as a single sensor chip assembly (SCA). The best SCAs in terms of performance were then built up into an FPA consisting of three SCAs, required to provide the necessary 15-degree field of view of the instrument. The FPA was tested to determine if project requirements were being met as a fully assembled unit. The performance of the QWIP SCAs and the fully assembled, NASA flight-qualified FPA will be reviewed.

Quantum well infrared photodiode↗

NASA NTRS1990

Status of LWIR HgCdTe infrared detector technology

The performance requirements that today's advanced Long Wavelength Infrared (LWIR) focal plane arrays place on the HgCdTe photovoltaic detector array are summarized. The theoretical performance limits for intrinsic LWIR HgCdTe detectors are reviewed as functions of cutoff wavelength and operating temperature. The status of LWIR HgCdTe photovoltaic detectors is reviewed and compared to the focal plane array (FPA) requirements and to the theoretical limits. Emphasis is placed on recent data for two-layer HgCdTe PLE heterojunction photodiodes grown at Loral with cutoff wavelengths ranging between 10 and 19 microns at temperatures of 70 to 80 K. Development trends in LWIR HgCdTe detector technology are outlined, and conclusions are drawn about the ability for photovoltaic HgCdTe detector arrays to satisfy a wide variety of advanced FPA array applications.

Reine, M. B.↗

DOE OSTI2025

Femtojoule optical nonlinearity for deep learning with incoherent illumination

Optical neural networks (ONNs) are a promising computational alternative for deep learning due to their inherent massive parallelism for linear operations. However, the development of energy-efficient and highly parallel optical nonlinearities, a critical component in ONNs, remains an outstanding challenge. Here, we introduce a nonlinear optical microdevice array (NOMA) compatible with incoherent illumination by integrating the liquid crystal cell with silicon photodiodes at the single-pixel level. We fabricate NOMA with more than half a million pixels, each functioning as an optical analog of the rectified linear unit at ultralow switching energy down to 100 femtojoules per pixel. With NOMA, we demonstrate an optical multilayer neural network. Our work holds promise for large-scale and low-power deep ONNs, computer vision, and real-time optical image processing.

36 MATERIALS SCIENCE↗

NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗