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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Development of Lattice-Mismatched GaInAsP for Radiation Hardness

We develop lattice-mismatched GaInAsP as an alternative alloy to pure As-based alloys currently used in III-V multijunction solar cells. Increasing the alloy phosphorous and indium content while maintaining an optimal bandgap may allow high efficiency multijunction devices with increased radiation hardness. Here, 1.0-eV GaInAsP is developed and implemented into single and multijunction solar cell devices. The lattice-mismatched GaInAsP must be grown strain free, and the subcell thickness must be maintained below the thickness where surface-driven phase separation occurs. As observed in transmission electron microscopy and cathodoluminescence imaging, phase separation strengthens in the GaInAsP layer and leads to interfacial defect formation when the cell thickness is too great. We show single junction 1.0-eV Ga 0.5 In 0.5 As 0.7 P 0.3 with excellent carrier collection and a bandgap-voltage offset of 0.40 V. This material quality approaches that of 1.0-eV Ga 0.7 In 0.3 As used in inverted metamorphic multijunction devices, but has increased phosphorus content and consequently is expected to have a higher radiation resistance. We incorporate the 1.0-eV GaInAsP subcell into a 3-junction inverted metamorphic solar cell to test the performance of the subcell in a multijunction. No additional loss is observed upon integration into a multijunction cell: both the carrier collection and voltage of the GaInAsP subcell are unchanged from single junction devices. While further materials development and radiation testing is still required, these preliminary results indicate that lattice-mismatched GaInAsP can be effectively used in multijunction solar cells to replace radiation-soft materials.

14 SOLAR ENERGY↗
DOE OSTI2020

Interfacial Electromechanics Predicts Phase Behavior of 2D Hybrid Halide Perovskites

Quasi-two-dimensional (2D) mixed-cation hybrid halide perovskites (A' 2 A N–1 M N X 3N+1 ; A' = large organic molecule with cationic group, A = [Cs + , CH 3 NH 3 + , HC(NH 2 ) 2 + ], M = [Pb, Sn, Ge], X = [I – , Br – , Cl – ]) have rapidly emerged as candidates to improve the structural stability and device lifetime of 3D perovskite semiconductor devices under operating conditions. The addition of the large A' cation to the traditional AMX 3 structure introduces several synthetic degrees of freedom and breaks M–X bonds, giving rise to peculiar critical phase behavior in the phase space of these complex materials. In this work, we propose a thermodynamic model parametrized by first-principles calculations to generate the phase diagram of 2D and quasi-2D perovskites (q-2DPKs) based on the mechanics and electrostatics of the interface between the A' cations and the metal halide octahedral network. Focusing on the most commonly studied methylammonium lead iodide system where A' is n-butylammonium (BA; CH 3 (CH 2 ) 3 NH 3 + ), we find that the apparent difficulty in synthesizing phase-pure samples with a stoichiometric index N > 5 can be attributed to the energetic competition between repulsion of opposing interfacial dipole layers and mechanical relaxation induced by interfacial stress. Our model shows quantitative agreement with experimental observations of the maximum phase-pure stoichiometric index (N crit ) and explains the nonmonotonic evolution of the lattice parameters with increasing stoichiometric index (N). This model is generalizable to the entire family of q-2DPKs and can guide the design of photovoltaic and optical materials that combine the structural stability of the q-2DPKs while retaining the charge carrier properties of their 3D counterparts.

14 SOLAR ENERGY↗
DOE OSTI2020

Synthesis of CdSeCdSexTe1-x/CdTe for Graded Solar Cells

Here, we have developed CdSe x Te 1-x /CdTe bilayer deposition for graded solar cell technology. Smoothly graded Se profiles with > 16% efficiency with Jsc=28 m A/cm 2 and 20-ns bulk lifetime has been observed observed. The CdSeTe reveals longer carrier lifetimes than CdTe within the same device.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Millions of Small Pressure Cycles Drive Damage in Cracked Solar Cells

Here, we applied time-varying air pressure to a PV module containing newly cracked cells. The test used a new dynamic mechanical acceleration (DMX) apparatus. We applied pressure cycles similar to natural, wind-driven cycles. Compared to standard dynamic mechanical load (DML) tests, we applied much lower pressure (10 Pa to 300 Pa RMS) and many more cycles (one million at each of four pressure levels). We present a case study on a single cell in a commercial module. We monitored electrical continuity loss across cracks using electroluminescence (EL) imaging. 10 Pa pressure cycles caused negligible change. 30 Pa pressure cycles caused permanent damage that continued worsening even after tens of thousands of cycles. After one million 30 Pa cycles, a series of 100 Pa cycles still caused new, permanent damage to existing cracks. 300 Pa cycles caused further worsening and introduced new cracks.

14 SOLAR ENERGY↗
DOE OSTI2023

Diffractive Multiplexing for High-Throughput Roll-to-Roll Laser Patterning of Flexible Organic Photovoltaic Modules (Final Report)

The purpose of this project is to demonstrate a cost-effective, high-throughput roll-to-roll (R2R) process for patterning of flexible, semitransparent organic photovoltaic (OPV) modules by developing diffractive optics-based laser multiplexing (DOL Multiplexing). DOL Multiplexing allows a single, high-powered laser source to perform parallel scribing across the R2R web width in a manner compatible with high process speeds. Such a process could have enormous benefits in terms of increased process speeds and reduced costs, both up-front capital costs, and long-term operational costs, over galvanometer-based step and scan methods or many-laser systems.

14 SOLAR ENERGY↗
DOE OSTI2021

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

A high-performance metamorphic Al 0.2 Ga 0.8 As 0.75 P 0.25 /GaAs 0.75 P 0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs 0.75 P 0.25 /Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes non-abrupt doping profiles in the Te doped layer. Furthermore, these efforts resulted in a fully-relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density (JP) of 279.1 A·cm –2 and a zero-bias resistance area product (RA) of 3.0×10 –4 Ω·cm 2 . After post-growth annealing to emulate the thermal load of the GaAs 0.75 P 0.25 top cell growth and elimination of the performance enhancing carbon activation anneal, the device achieved JP = 13.1 A·cm –2 and RA = 1.5×10 –3 Ω·cm 2 . These worst-case values are very promising as they enable the operation of GaAs 0.75 P 0.25 /Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss.

14 SOLAR ENERGY↗
DOE OSTI2020

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

14 SOLAR ENERGY↗
DOE OSTI2024

1.1 eV GaInAs Cell Development for Dual-Use Solar and 1070 nm Laser Power Converters

Dual-use power converter cells can receive solar and laser power simultaneously to generate current, an application relevant to space and terrestrial industries. This study investigates two concepts of solar cells optimized for dual-use 1070 nm laser and solar power conversion, a single-junction and triple-junction cell. Because it is bandgap-tuned for a 1070 nm laser, the 1.1 eV junction is incorporated into each of the two designs, making its development key to the success of both concepts. Efficiency data for a one junction GaInAs cell demonstrates a laser conversion efficiency of 38% at 1070nm wavelength without an anti-reflection coating. However, the single-junction device requires optimization to reduce short wavelength absorption of the broad solar spectrum. In both devices, the graded buffer layers in the GaInAs cell affects the cell's performance by reducing threading dislocations in the active junction. However, the buffer in the three-junction device also acts as a lateral transport layer and so affects the fill factor depending on its sheet resistance. By varying the buffer thickness, we demonstrate a direct relationship between buffer thickness and sheet resistance reduction, while considering implications to open-circuit voltages. We also performed resistance modeling to determine the optimal grid spacing and thickness of the grid fingers to minimize losses due to sheet resistance and grid shading.

junctions↗
DOE OSTI2026

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗
DOE OSTI2025

Interface Engineering using Vapor Transport Deposited Perovskite Films for Solar Cells

The overarching goal of this project was to demonstrate the viability of vapor transport deposition (VTD) for the fabrication of efficient and stable metal-halide perovskite solar cells. VTD is a solvent-free alternative to conventional solution-processing of the light-absorbing, perovskite active layer. Since solution-processing frequently requires the use of toxic solvents, transition to a dry-processing approach has the potential to remove an obstacle to facile and economically meaningful commercialization. Further, VTD bears similarity to existing industrially-relevant processing approaches used for the production of thin-film CdTe solar modules, suggesting the potential for rapid adoption and transition to industry. The results described within this report offer design rules for the processing of metal-halide perovskites via VTD and new insights into the design of deposition systems to inform future applications.

14 SOLAR ENERGY↗
DOE OSTI2024

Impacts of Non-Ideal Back Contact on Capacitance Measurements in CdTe Solar Cells

CdTe solar cells suffer from a non-ideal back contact which can strongly affect the equivalent circuit model and complicate capacitance measurements. Here, five different back contact materials are deposited on identical CdTe absorbers and their influence on capacitance measurements is characterized. A five-element equivalent circuit model is shown to represent a CdTe solar cell with a non-ideal back contact, and capacitance-frequency (C-f) measurements on each sample clearly show the influence of this contact. Capacitance-voltage (C-V) measurements on each sample show the influence of frequency on measured capacitance. In the AlGaOx/Au sample, temperature dependent C-fs show the back barrier height to be 240 meV, and ongoing measurements will give a comparison of back barrier heights for all samples. This study provides insight into the efficacy of various back contacts and highlights potential errors in the interpretation of capacitance measurements due to the presence of the back contact.

cadmium compounds↗
DOE OSTI2020

Precursor Reaction Method With High Ga Cu(In,Ga)(S,Se)$_{2}$ to Achieve Increased Open-Circuit Voltage

The precursor reaction process for the fabrication of Cu(In,Ga)Se 2 solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab-scale experiments. Thus far, research on the precursor reaction method has been restricted to relatively low Ga compositions with Ga/(In+Ga) ≈ 25%. By increasing the ratio of Ga, it is possible to increase the bandgap, and thus, increase the open-circuit voltage. This work develops and characterizes the precursor reaction process for use with Ga/(In+Ga) ≈ 50%, with the goal of improving the open-circuit voltage and efficiency. It is shown that with an increased Ga ratio, increased V ∞ is achieved, but the rate of conversion from the precursor to absorber phases is decreased. Additionally, increased Ga improves the film adhesion at increased selenization temperatures as well as improving the film morphology.

14 SOLAR ENERGY↗
DOE OSTI2022

Microstructure changes during failure of PVDF-based photovoltaic backsheets

The backsheet layer of a solar module provides a safety and environmental barrier to the high voltages running through the photovoltaic (PV) cells and electrical contacts within the core of the module. However, in the past decade, backsheet cracking has become one of the most observed failure modes in PV module field surveys. In this work, the degradation of polyvinylidene fluoride (PVDF)-based backsheets is explored. Backsheet samples are either exposed to accelerated laboratory aging (UV light, heat, and moisture) or collected from the field. Fourier transform infrared and Raman spectroscopy, fragmentation testing, atomic force and scanning electron microscopy, and small-angle neutron scattering are combined to develop an understanding of how chemistry and microstructure evolve during aging. Chemical degradation, surface pitting, polymer phase changes, and anisotropic polymer domains are all observed in aged backsheet samples. The results provide insight into the degradation mechanisms that lead to cracking and field failure of PVDF-based backsheets. The comparison of aged PVDF-based backsheets helps to lay the groundwork for limiting polymer-based failure modes in PV modules.

PVDF↗
DOE OSTI2020

The Critical Role of AlInP Window Design in III–V Rear-Emitter Solar Cells

This article highlights the critical role of window design on short circuit carrier collection in rear-emitter solar cells, as demonstrated through modeling and experiment using metamorphic GaAs y P 1-y . Ultimately, if the window design is not carefully considered, surface depletion caused by Fermi level pinning at the window/air interface can extend into regions of active collection resulting in a large increase in effective window/base interface recombination velocity. This was experimentally shown here to result in a potential AM1.5G photocurrent loss of 8.1 mA/cm 2 , or nearly 50%, based on integrated internal quantum efficiency (IQE). Associated IQE modeling and curve fitting indicate that the effective IRV at the GaAs 0.75 P 0.25 /Al 0.64 In 0.36 P interface is increased by multiple orders of magnitude when the window is not sufficiently thick or doped to fully contain the surface depletion to within the window layer. Calculations of the surface depletion depth as a function of doping and the surface Fermi pinning energy level provides insight into the fundamental limits of window thickness. As a result, this allows the estimation of the Al 0.64 In 0.36 P surface pinning level to be at least 1.25 eV below the conduction band edge, or in the bottom half of the bandgap.

14 SOLAR ENERGY↗
DOE OSTI2025

Scintillator based nuclear photovoltaic batteries for power generation at microwatts level

A nuclear photovoltaic battery uses scintillator to convert radiation into visible light, which is then collected by a photovoltaic (PV) cell to generate electricity. If the radiation is gamma-rays emitted from external sources, the battery may also be referred as gammavoltaic battery. In this study, a polycrystalline CdTe solar cell was optically coupled with a 2.0 cm × 2.0 cm × 1.0 cm Gadolinium Aluminum Gallium Garnet (GAGG) scintillator, and the resulting device was tested using intense gamma radiation fields from a Cs-137 (1.5 kRad/h) and a Co-60 (10 kRad/h) irradiator. Measurements with Cs-137 provided a maximum power output (P max ) of ~288 nW, with a short-circuit current density (J sc ) of ~1.22 μA/cm 2 and an open-circuit voltage (V oc ) of ~0.34 V. In contrast, Co-60 irradiator gave a P max of 1.5 μW, with a J sc of ~4.73 μA/cm 2 and a V oc of ~0.38 V. The CdTe was also paired with a Lutetium-Yttrium Oxyorthosilicate (LYSO) crystal and tested with the Cs-137 source. The experiment presents a scalable option to reach to higher power outputs by harvesting gamma radiation fields in many cases where high radiation field demands heavy shielding and is often regarded as unwanted waste.

25 ENERGY STORAGE↗
DOE OSTI2026

Electrochemical Reactions Under Reverse Bias Create Additional Mobile Ions That Enable Hole Tunneling in Metal Halide Perovskite Diodes

Gradual reverse-bias breakdown in metal-halide perovskite diodes and solar cells is thought to originate from hole tunneling through steep bands in an ionic depletion region near the electron-transport layer after positively charged iodine vacancies accumulate near the hole-transport layer (HTL). However, typical reported mobile-ion concentrations near 1 x 10^17 cm-3 are too small to quantitatively explain significant tunneling-current densities and (Zener) breakdown observed near -5 V. Here, we show that inferred mobile-ion concentrations increase by more than 100x, to over 1 x 10^18cm-3 , within just 3 min of reverse bias at -6.0 V in p-i-n perovskite diodes. We attribute this increase to iodide oxidation and coupled iodine vacancy creation that must be balanced by reduction reactions near the HTL. Sub-optimal HTL coverage leads to direct contact between the transparent conducting electrode and perovskite, facilitates reduction events, enables the creation of even larger inferred mobile-ion concentrations (~1 x 10^19cm-3 ), and leads to faster degradation under reverse bias. This explains previous work that showed increased breakdown voltages and improved reverse-bias stability by implementing thick, uniform HTLs.

14 SOLAR ENERGY↗
DOE OSTI2026

Optical Durability of Contemporary PV Encapsulants Through Artificial UV Weathering

Modern c-Si photovoltaic (PV) cells provide high performance but can be vulnerable to ultraviolet light induced degradation (UV-ID). Encapsulants, if chosen correctly, can mitigate UV-ID of the PV cell. Here, we explore performance and durability of 14 commercial encapsulant materials before, during, and after irradiation with UV-containing light. Materials include contemporary, polymer-based encapsulants with a base polymer of poly (ethylene co-vinyl acetate) (EVA), polyethylene-..alpha..-olefin (POE), or their composite (EPE). Polymers contain additives that induce UV-blocking, UV-transmitting, or UV-downshifting properties. We use test coupons to study degradation in a chamber held at 65 degrees C under a xenon light source for up to 4000 h of exposure, corresponding to a cumulative dose of 11.5 MJ/m2 at 340 nm. We examine optical properties including spectral transmittance, yellowness index and spectral fluorescence, considering changes to both the encapsulant and glass as a function of weathering time. Degradation modes identified include discoloration, changes to UV cutoff wavelength, changes to solar-weighted transmittance, and most notably a change to the UV-managing properties of some additives. We propose the use of solar-weighted transmittance in the 300- to 400-nm range to better track performance changes in the UV region associated with the UV-related additive. This is especially relevant for the emerging class of UV-downshifting additives, as metrics like UV-cutoff can understate the degree of degradation or change in these materials. While most encapsulants show very little change after weathering, some show significant changes that directly impact how much UV light would reach an underlying cell.

14 SOLAR ENERGY↗
DOE OSTI2020

Rapid Open-Air Fabrication of Perovskite Solar Modules

We report on the open-air fabrication of perovskite solar modules with key advances including scalable large-area spray deposition, new monolithic integration scribing techniques, advanced photoluminescence characterization, and reproducible high-throughput manufacturability. Perovskite deposition with linear speeds of 12 m/min without a post-anneal are demonstrated with improved device performance, luminescent yield and >10X carrier lifetimes. Manufacturability using monolithic integration of series-connected modules is accomplished with a new indirect fiber laser ablation scribing method. A stable cell and module power output of 18.0% and 15.5%, respectively, was achieved with a subcell V oc > 1.06V. A comprehensive supporting technoeconomic analysis details the entire in-line manufacturing process from the glass substrate to the junction box of the encapsulated module. Here, the module manufacturing cost, balance of system costs and levelized cost of energy for a range of module efficiencies and lifetimes provides insights for the necessary tool speeds, efficiencies, and lifetimes for utility-scale energy generation.

14 SOLAR ENERGY↗