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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Unveiling the role of halide mixing in the crystallization kinetics and charge transfer mechanisms of wide-bandgap organic–inorganic halide perovskites

Understanding the crystallization kinetics of Br–I mixed-halide WBG perovskite films, and their correlation to the crystallographic structure and charge transfer dynamics, is critical for advancing WBG perovskite devices. Despite many efforts to increase the photovoltaic performances of wide-bandgap (WBG, with a Br content above 20%) perovskite solar cells based on bromine–iodine (Br–I) mixed-halide perovskites, understanding the crystallization kinetics of WBG perovskite films, as well as the role of Br mixing in the crystallization kinetics, is still lacking. Furthermore, an overlooked aspect is the correlation of the halide compositions, crystallization kinetics, crystallographic structure, and charge transfer dynamics. Here, we unveil that Br–I mixed-halide WBG perovskite films undergo two intrinsically different crystallization kinetic processes. One is the intermediate solvent-complex phase-assisted growth (I-rich), and the other is top-to-bottom downward growth (Br-rich). Such downward growth (including high Br concentrations) correlates with the formation of a highly vertically oriented perovskite film, which is accompanied by defect formation caused by a dissolving and recrystallization process coupled with halide homogenization. Consequently, Br-rich WBG perovskite films exhibit enhanced charge carrier transport, but are concurrently plagued by non-radiative charge recombination. Addressing this fundamental perspective is critical to precisely tailor Br-related crystallization, which significantly affects the structure and optoelectronic properties of WBG perovskite films and devices.

Li, Nian↗
DOE OSTI2024

Simulation of DIII-D disruption with argon pellet injection and runaway electron beam

Abstract The next generation of large tokamaks, including ITER, will be equipped with a disruption mitigation system (DMS) that can be activated if a disruption is deemed to be imminent. Introducing impurities by pellet (large or shattered) or massive gas injection has been shown to be an effective mitigation mechanism on many tokamaks. The goal of the mitigation is to lessen the thermal and electromagnetic loads from the disruption without generating enough high-energy (runaway) electrons to damage the device. Variations of this mitigation process with impurity injection are presently being tested on many experiments. We have modeled one such impurity injection experiment on DIII-D using the M3D-C1 nonlinear 3D extended MHD code (Jardin et al 2012 Comput. Sci. Discovery 6 014002), The model includes an argon large pellet injection and ablation model, impurity ionization, recombination, and radiation, and runaway electron formation and subsequent evolution, including both Dreicer and avalanche sources. We obtain reasonable agreement with the experimental results for the timescale of the thermal and current quench and for the magnitude of the runaway electron plateau formed during the mitigation. This is the first 3D full MHD simulation with pellets and REs to simulate the disruption process and it also provides a partial validation of the M3D-C1 DMS model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1979

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗
NASA NTRS2004

Probing me Reverse Shock in an Oxygen-Rich Supernova Remnant

The aim of this project is to examine the O VI emission at three positions around the X- ray bright ring of the remnant in order to investigate the relation between the O VI emission, the X-ray O VII and O VIII emission, and the optical [OIII} emission, and how these vary around the rim of the remnant. All three pointings and the background pointing have now been observed; the archive notification for the most recent dataset was Oct 30, 2003. After reprocessing and screening, the net exposure time for the SE exposure is only 54 percent of the approved time (15 kilosec). for the SE exposure, the available statistics are not good enough for analysis. A request for reobservation to make up for the lost time in the SE pointing has been approved. Broad O VI 1032 and O VI 1038 emission is detected with velocity width of at least 800 km/s, and possibly exceeding 1000 km/s. The Flanagan et al. analysis of the Chandra grating data show bulk velocities in the X-ray gas of order +/- 1000 km/s. In the region of the FUSE E0lO2-SE pointing, the Chandra data indicate both blue-shifted and red-shifted emission. Analysis of the velocity structure of the O VI emission will provide additional constraints on the kinematics of the gas: is it emission from a tilted expanding barrel, or a more symmetric expansion? The O VI fluxes are also needed to assess whether the O VI is radiation from recombining O VII or instead fiom cooler gas ionizing toward O VII. The emission is faint, however, which complicates the analysis. Because the lines are so broad, absorption by intervening H2, CII, and foreground OVI must be considered. A number of stars in the SMC have been observed which provide information on foreground OVI absorption. The initial analyses have concentrated on the Li1F channel since the guidance is based on that channel. The Li2F channel is being examined exposure by exposure to see if any of the data can be used to improve the signal to noise in the Li1F data.

Gaetz, Terrance↗
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
NASA NTRS1974

Slip conditions with wall catalysis and radiation for multicomponent, nonequilibrium gas flow

The slip conditions for a multicomponent mixture with diffusion, wall-catalyzed atom recombination and thermal radiation are derived, and simplified expressions for engineering applications are presented. The gas mixture may be in chemical nonequilibrium with finite-rate catalytic recombination occurring on the wall. These boundary conditions, which are used for rarefied flow regime flow field calculations, are shown to be necessary for accurate predictions of skin friction and heat transfer coefficients in the rarefied portion of the space shuttle trajectory.

Hendricks, W. L.↗
NASA NTRS1978

Temperature and ionization balance dependence of O VII line ratios

The forbidden-plus-intersystem to resonance line ratio (G) for the heliumlike ion O VII is calculated, taking into account cascades, blended satellite lines, and radiative plus dielectric recombination. It is noted that G is of particular use for investigating radiative-transfer effects and nonequilibrium ionization in the solar corona and that the calculations are applicable to a low-density optically thin Maxwellian plasma. The temperature dependence of G is considered for the case of a steady-state equilibrium plasma, and the effect of departures from ionization equilibrium on G is examined. It is found that G is quite insensitive to temperature over the range from 600,000 to 6 million K for a steady-state plasma, but that recombinations may be suppressed or dominant, depending on the relative abundance of O VIII, for a plasma in which the state of ionization is not in equilibrium with the electron temperature. This latter effect is shown to be capable of causing large variations in G that are dependent on electron temperature.

Acton, L. W.↗
NASA NTRS2002

The EUV Helium Spectrum in the Quiet Sun: A By-Product of Coronal Emission?

In this paper we test one of the mechanisms proposed to explain the intensities and other observed properties of the solar helium spectrum, and in particular of its Extreme-Ultraviolet (EUV) resonance lines. The so-called Photoionisation-Recombination (P-R) mechanism involves photoionisation of helium atoms and ions by EUV coronal radiation, followed by recombination cascades. We present calibrated measurements of EUV flux obtained with the two CDS spectrometers on board SOHO, in quiescent solar regions. We were able to obtain an essentially complete estimate of the total photoionizing flux in the wavelength range below 504 A (the photoionisation threshold for He(I)), as well as simultaneous measurements with the same instruments of the intensities of the strongest EUV helium lines: He(II) lambda304, He(I) lambda584, and He(I) lambda537. We find that there are not enough EUV photons to account for the observed helium line intensities. More specifically, we conclude that He(II) intensities cannot be explained by the P-R mechanism. Our results, however, leave open the possibility that the He(I) spectrum could be formed by the P-R mechanism, with the He(II) lambda304 line as a significant photoionizating source.

Andretta, Vincenzo↗
NASA NTRS1977

The influence of autoionization accompanied by excitation on the dielectronic recombination and the ionization equilibrium of silicon ions

The dielectronic recombination rate coefficients have been calculated for the various ionization stages of silicon. Account has been taken of all stabilizing radiative transitions and all autoionization processes which involve a single-electron electric-dipole transition of the recombining ion core. For certain ions the dielectronic recombination rates, although still larger than the direct radiative recombination rates, are found to be substantially reduced when account is taken of the effects of a previously neglected autoionization process in which the excited recombining ion core undergoes a delta n = 0 transition to a lower excited state. The temperatures at which these ions have their maximum abundance in corona equilibrium are significantly reduced when use is made of the new dielectronic recombination rates. Calculations are also presented for the total rates of radiative energy loss from isothermal steady-state plasmas due to the line and continuum emission of silicon ions.

Jacobs, V. L.↗