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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11

VIPER project

The VIPER project has so far produced a formal specification of a 32 bit RISC microprocessor, an implementation of that chip in radiation-hard SOS technology, a partial proof of correctness of the implementation which is still being extended, and a large body of supporting software. The time has now come to consider what has been achieved and what directions should be pursued in the future. The most obvious lesson from the VIPER project was the time and effort needed to use formal methods properly. Most of the problems arose in the interfaces between different formalisms, e.g., between the (informal) English description and the HOL spec, between the block-level spec in HOL and the equivalent in ELLA needed by the low-level CAD tools. These interfaces need to be made rigorous or (better) eliminated. VIPER 1A (the latest chip) is designed to operate in pairs, to give protection against breakdowns in service as well as design faults. We have come to regard redundancy and formal design methods as complementary, the one to guard against normal component failures and the other to provide insurance against the risk of the common-cause failures which bedevil reliability predictions. Any future VIPER chips will certainly need improved performance to keep up with increasingly demanding applications. We have a prototype design (not yet specified formally) which includes 32 and 64 bit multiply, instruction pre-fetch, more efficient interface timing, and a new instruction to allow a quick response to peripheral requests. Work is under way to specify this device in MIRANDA, and then to refine the spec into a block-level design by top-down transformations. When the refinement is complete, a relatively simple proof checker should be able to demonstrate its correctness. This paper is presented in viewgraph form.

Kershaw, John↗

High-efficiency, radiation-resistant GaAs space cells

Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

Bertness, K. A.↗

Rubidium atomic frequency standards for GPS Block IIR

The Rubidium Atomic Frequency Standards (RAFS) were provided for the GPS Block IIR NAVSTAR satellites. These satellites will replenish and upgrade the space segment of the Global Positioning System in the mid 1990s. The GPS RAFS Rb clocks are the latest generation of the high-performance rubidium frequency standards. They offer an aging rate in the low pp 10(exp 14)/day range and a drift-corrected 1-day stability in the low pp 10(exp 14) range. The Block IIR version of these devices will have improved performance, higher reliability, smaller size, and greater radiation hardness. The GPS Block IIR atomic clocks have a natural frequency configuration whereby they output a frequency of about 13.4 MHz that is a submultiple of the atomic resonance of Rb (or Cs). The RAFS operates at a low, fixed C-field for increased stability. The GPS Block IIR RAFS design, including the changes and improvements made, and the test results obtained are described.

Riley, William J.↗

Analog synthesized fast-variable linear load

A several kilowatt power level, fast-variable linear resistor was synthesized by using analog components to control the conductance of power MOSFETs. Risetimes observed have been as short as 500 ns with respect to the control signal and 1 to 2 microseconds with respect to the power source voltage. A variant configuration of this load that dissipates a constant power set by a control signal is indicated. Replacement of the MOSFETs by static induction transistors (SITs) to increase power handling, speed and radiation hardness is discussed.

Niedra, Janis M.↗

Fabrication and performance analysis of 4-sq cm indium tin oxide/InP photovoltaic solar cells

Large-area photovoltaic solar cells based on direct current magnetron sputter deposition of indium tin oxide (ITO) into single-crystal p-InP substrates demonstrated both the radiation hardness and high performance necessary for extraterrestrial applications. A small-scale production project was initiated in which approximately 50 ITO/InP cells are being produced. The procedures used in this small-scale production of 4-sq cm ITO/InP cells are presented and discussed. The discussion includes analyses of performance range of all available production cells, and device performance data of the best cells thus far produced. Additionally, processing experience gained from the production of these cells is discussed, indicating other issues that may be encountered when large-scale productions are begun.

Gessert, T. A.↗

The mid-infrared spectrum of the carbon star HD 38218 and its possible relation to polycyclic aromatic hydrocarbons

The mid-infrared spectra of carbon giant stars with hot companions are investigated in order to search for infrared emission bands from polycyclic aromatic hydrocarbons (PAH) in the envelopes of the C giants. A strong 8-micron emission band found in TU Tau = HD 38218 is attributed to the binary A star companion. It is argued that if the 8-micron feature in HD 38218 arises from PAHs, they seem to be important constituents of the C-giant shell, and they might be large compared with some interstellar PAHs. It is suggested that because no other IR spectra of C giants show clear PAH features, the greater flux of hard radiation in the binary HD 38218 seems likely to be responsible for the 8-micron feature and for its absence in many other C giants. Thus, PAHs could be present in the same amounts relative to SiC grains in the shells of similar single C giants, and the formation of carbonaceous grains could proceed through the formation of PAHs in C giant shells.

Buss, Richard H., Jr.↗

Report of the ultraviolet and visible sensors panel

In order to meet the science objectives of the Astrotech 21 mission set the Ultraviolet (UV) and Visible Sensors Panel made a number of recommendations. In the UV wavelength range of 0.01 to 0.3 micro-m the focus is on the need for large format high quantum efficiency, radiation hard 'solar-blind' detectors. Options recommended for support include Si and non-Si charge coupled devices (CCDs) as well as photocathodes with improved microchannel plate readouts. For the 0.3 to 0.9 micro-m range, it was felt that Si CCDs offer the best option for high quantum efficiencies at these wavelengths. In the 0.9 to 2.5 micro-m the panel recommended support for the investigation of monolithic arrays. Finally, the panel noted that the implementation of very large arrays will require new data transmission, data recording, and data handling technologies.

Timothy, J. Gethyn↗

Analog synthesized fast-variable linear load

A several-kilowatt power level, fast-variable linear resistor has been synthesized by using analog components to control the conductance of power MOSFETs. Risetimes observed have been as short as 500 ns with respect to the control signal and 1 to 2 microsec with respect to the power source voltage. A variant configuration of this load that dissipates a constant power set by a control signal is indicated. Replacement of the MOSFETs by static induction transistors to increase power handling, speed, and radiation hardness is discussed.

Niedra, Janis M.↗

High speed magneto-resistive random access memory

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Wu, Jiin-Chuan↗

Destruction and survival of polycyclic aromatic hydrocarbons in active galaxies

Infrared spectra of dusty galactic environments often contain emission features attributed to polycyclic aromatic hydrocarbons or PAHs, which can be considered to be very small grains or very large molecules. Although IR spectra of starburst galaxies almost always show these emission features, similar spectra of active galaxies are usually featureless. Even in those active galaxies that do exhibit PAH emission, the PAHs still appear to be eradicated from the nuclear region. This dichotomy suggests that PAHs are destroyed by the intense hard radiation field from an AGN. Laboratory experiments show that certain PAHs are, in fact, so effectively destroyed by individual EUV and X-ray photons that they cannot survive even at kiloparsec distances from active nuclei. Regions within active galaxies that do show PAH emission must therefore be shielded from the central X-ray source by a substantial column density of X-ray absorbing gas.

Voit, G. M.↗

Mongoose ASIC microcontroller programming guide

The 'Mongoose' ASIC microcontroller is a radiation-hard implementation of the R3000 microprocessor. This document describes the internals of the microcontroller in a level of detail necessary for someone implementing a software design.

Smith, Brian S.↗

Design and implementation of GaAs HBT circuits with ACME

GaAs HBT circuits offer high performance (5-20 GHz) and radiation hardness (500 Mrad) that is attractive for space applications. ACME is a CAD tool specifically developed for HBT circuits. ACME implements a novel physical schematic-capture design technique where designers simultaneously view the structure and physical organization of a circuit. ACME's design interface is similar to schematic capture; however, unlike conventional schematic capture, designers can directly control the physical placement of both function and interconnect at the schematic level. In addition, ACME provides design-time parasitic extraction, complex wire models, and extensions to Multi-Chip Modules (MCM's). A GaAs HBT gate-array and semi-custom circuits have been developed with ACME; several circuits have been fabricated and found to be fully functional .

Hutchings, Brad L.↗

Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

Offord, Bruce W.↗

SAW based systems for mobile communications satellites

Modern mobile communications satellites, such as INMARSAT 3, EMS, and ARTEMIS, use advanced onboard processing to make efficient use of the available L-band spectrum. In all of these cases, high performance surface acoustic wave (SAW) devices are used. SAW filters can provide high selectivity (100-200 kHz transition widths), combined with flat amplitude and linear phase characteristics; their simple construction and radiation hardness also makes them especially suitable for space applications. An overview of the architectures used in the above systems, describing the technologies employed, and the use of bandwidth switchable SAW filtering (BSSF) is given. The tradeoffs to be considered when specifying a SAW based system are analyzed, using both theoretical and experimental data. Empirical rules for estimating SAW filter performance are given. Achievable performance is illustrated using data from the INMARSAT 3 engineering model (EM) processors.

Peach, R. C.↗

A low-cost, CCD solid state star tracker

Applied Research Corporation (ARC) has developed an engineering model of a multi-star CCD-based tracker for space applications requiring radiation hardness, high reliability and low power consumption. The engineering unit compared favorably in functional performance tests to the standard NASA single-star tracker. Characteristics of the ARC star tracker are: field of view = 10 deg x 7.5 deg, sensitivity range of -1 to +5 star magnitude, NEA = 3 in x 3 in, linearity = 5 in x 5 in, and power consumption of 1-3 W (operating mode dependent). The software is upgradable through a remote link. The hardware-limited acquisition rate is 1-5 Hz for stars of +2 to +5 magnitude and 10-30 Hz for -1 to +2 magnitude stars. Mechanical and electrical interfaces are identical to the standard NASA star tracker.

Chmielowski, M.↗

Advanced Solar Cells for Satellite Power Systems

The multiple natures of today's space missions with regard to operational lifetime, orbital environment, cost and size of spacecraft, to name just a few, present such a broad range of performance requirements to be met by the solar array that no single design can suffice to meet them all. The result is a demand for development of specialized solar cell types that help to optimize overall satellite performance within a specified cost range for any given space mission. Historically, space solar array performance has been optimized for a given mission by tailoring the features of silicon solar cells to account for the orbital environment and average operating conditions expected during the mission. It has become necessary to turn to entirely new photovoltaic materials and device designs to meet the requirements of future missions, both in the near and far term. This paper will outline some of the mission drivers and resulting performance requirements that must be met by advanced solar cells, and provide an overview of some of the advanced cell technologies under development to meet them. The discussion will include high efficiency, radiation hard single junction cells; monolithic and mechanically stacked multiple bandgap cells; and thin film cells.

Flood, Dennis J.↗

P/N InP solar cells on Ge wafers

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented indicating InP/Ge has more power output than GaAs/Ge cells at fluences in excess of this value.

Wojtczuk, Steven↗

X-ray and gamma-ray emission of Sagittarius A* as a wind-accreting black hole

If, as many believe, Sgr A* is a massive black hole at the Galactic center, one should expect it to be a source of X-ray and gamma-ray activity, behaving basically as a scaled-down active galactic nucleus. An unavoidable source of accretion is the wind from IRS 16, a nearby group of hot, massive stars. Since the density and velocity of the accreting matter are known from observations, the accretion rate is basically a function of the putative black hole mass, M(sub h), only; this value represents a reliable lower limit to a real rate, given the other possible sources of accreting matter. Based on this and on the theories about shock acceleration in active galactic nuclei, we have estimated the expected production of relativistic particles and their hard radiation. These values turn out to be a function of M(sub h) as well. Comparing our results with available X-ray and gamma-ray observations which show Sgr A* to have a relatively low activity level, we conclude tentatively that the putative black hole in the Galactic center cannot have a mass greater than approximately 6 x 10(exp 3) solar mass. This conclusion is consistent with the upper limits to the black hole mass found by different methods earlier, although much more work is needed to make calculations of shock acceleration around black holes more reliable.

Mastichiadis, A.↗