SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Abstract Selenium NMR has become a standard tool for scaling the π‐accepting character of carbenes. Herein, we highlight that non‐classical hydrogen bonding (NCHB), likely resulting from hyperconjugation, can play a significant role in the carbene–selenium 77 Se NMR chemical shift, thus triggering a non‐linear behavior of the Se‐Scale.
Selenium NMR has become a standard tool for scaling the p-accepting character of carbenes. Herein, we highlight that non-classical hydrogen bonding (NCHB), likely resulting from hyperconjugation, can play a significant role in the carbene–selenium 77 Se NMR chemical shift, thus triggering a non-linear behavior of the Se-Scale.
Although atomically precise polyhydrido copper nanoclusters are of prime interest for a variety of applications, they have so far remained scarce. Here, we describe the synthesis of a dithiophosphate-protected copper(I) hydride-rich nanocluster (NC), [Cu 30 H 18 {S 2 P(O n Pr) 2 } 12 ] ( 1 H ), fully characterized by various spectroscopic methods and single-crystal X-ray diffraction. The X-ray structure of 1 H reveals an unprecedented central Cu 12 hollow icosahedron. Six faces of this icosahedron are capped by Cu 3 triangles, the whole Cu 30 core being wrapped by twelve dithiophosphate ligands and the whole cluster has ideal S 6 symmetry. The locations of the 18 hydrides in 1 H were ascertained by a single-crystal neutron diffraction study. They are composed of three types: capping μ 3 -H, interstitial μ 4 -H (seesaw) and μ 5 -H ligands (square pyramidal), in good agreement with the DFT simulations. The numbers of hydrides and ligand resonances in the 1 H NMR spectrum of 1 H are in line with their coordination environment in the solid state, retaining the S 6 symmetry in solution. Furthermore, two new Se-protected polyhydrido copper nanoclusters, [Cu 30 H 18 {Se 2 P(OR) 2 } 12 ] ( 2 H : R= i Pr 3 H : R= i Bu) were synthesized from their sulfur relative 1 H via ligand displacement reaction and their X-ray structures feature the exceptional case where both the NC shape and size are fully conserved during the course of ligand exchange. DFT and TD-DFT calculations allow understanding the bonding and optical properties of clusters 1 H – 3 H . In addition, the reaction of 1 H with [Pd(PPh 3 ) 2 Cl 2 ] in the presence of terminal alkynes led to the formation of new bimetallic Cu–Pd alloy clusters [PdCu 14 H 2 {S 2 P(O n Pr) 2 } 6 (C≡CR) 6 ] ( 4 : R=Ph; 5 : R = C 6 H 4 F).
Abstract Solution‐processed Cu(In,Ga)(S,Se) 2 (CIGS) has a great potential for the production of large‐area photovoltaic devices at low cost. However, CIGS solar cells processed from solution exhibit relatively lower performance compared to vacuum‐processed devices because of a lack of proper composition distribution, which is mainly instigated by the limited Se uptake during chalcogenization. In this work, a unique potassium treatment method is utilized to improve the selenium uptake judiciously, enhancing grain sizes and forming a wider bandgap minimum region. Careful engineering of the bandgap grading structure also results in an enlarged space charge region, which is favorable for electron–hole separation and efficient charge carrier collection. Besides, this device processing approach has led to a linearly increasing electron diffusion length and carrier lifetime with increasing the grain size of the CIGS film, which is a critical achievement for enhancing photocurrent yield. Overall, 15% of power conversion efficiency is achieved in solar cells processed from environmentally benign solutions. This approach offers critical insights for precise device design and processing rules for solution‐processed CIGS solar cells.
Voltage losses reduce the photovoltaic conversion efficiency of thin‐film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se 2 . Herein, voltage loss analysis of Cu(In,Ga)Se 2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute >75% of the total compared to <25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition‐driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells.
Emphanisis, or the appearance out of nothing, has been used to describe the phenomena of spontaneous atom off-centering and dipole formation at elevated temperatures in lead chalcogenides. Here, we provide spectroscopic evidence of spontaneous formation of metal-metal bonds above T~50 K in the layered metal KNi 2 Se 2 . These bonds form zig-zag chains that lower the local symmetry from tetragonal to monoclinic. Energy-resolved pair distribution function measurements exclude a pure phonon origin of our observations, and instead imply the existence of extra, slowly fluctuating, Ni-Ni bonds above T=50 K. Density functional theory calculations support this lower symmetry configuration as an instability of tetragonal KNi 2 Se 2 . We thus demonstrate that the phenomena of emphansis is not limited to local electric dipole formation, but can also be driven by the formation of metal-metal bonds.
This work is focused on investigating the effect of Ag doping on the dielectric and structural properties of the As–S–Se glass system and their suitability for potential applications in optoelectronics, such as electronic and switching components. A series of glasses from the system Agx(As40S30Se30)100-x (x = 5 at.% Ag) were prepared with melt-quenching technique. Morphological and compositional analysis was performed by scanning electron microscopy and energy-dispersive X-ray spectroscopy. Raman spectroscopy measurements have shown structural modifications of the glass network upon Ag doping, with creation of new Ag–(S,Se)–As structures, resulting in increased number of defect states. Variations in dielectric permittivity (e') and dielectric loss (e") were investigated in a wide frequency and temperature range, and explained by dominant dipolar and electronic polarization, as well as correlated with the observed structural changes. Improvement in dielectric properties is observed upon doping with Ag. Furthermore, the low dielectric tangent loss at high frequencies for all glassy samples points to a beneficial ability of the material to absorb energy of the external electric field. Good thermal stability of these glasses is confirmed by the calculated temperature coefficient of the dielectric permittivity. Density of localized states in all glasses was determined from AC conductivity and the dielectric tangent loss using a correlated barrier hopping model, and found to increase with Ag concentration. The overall results suggest that Ag doping enhances the electrical and optical quality of this type of glasses, making them suitable as nonlinear optical materials and their applications in devices.
The ground state half-lives of 69 Ge, 73 Se, 83 Sr, 63 Zn, and the half-life of the 1/2 - isomer in 85 Sr have been measured with high precision using the photoactivation technique at an unconventional bremsstrahlung facility that features a repurposed medical electron linear accelerator. The γ -ray activity was counted over about 6 half-lives with a high-purity germanium detector, enclosed into an ultra low-background lead shield. The measured half-lives are: T 1/2 ( 69 Ge) = 38.82 ± 0.07 (stat) ± 0.06 (sys) h; T 1/2 ( 73 Se) = 7.18 ± 0.02 (stat) ± 0.004 (sys) h; T 1/2 ( 83 Sr) = 31.87 ± 1.16 (stat) ± 0.42 (sys) h; T 1/2 ( 85m Sr) = 68.24 ± 0.84 (stat) ± 0.11 (sys) min; T 1/2 ( 63 Zn) = 38.71 ± 0.25 (stat) ± 0.10 (sys) min. These high-precision half-life measurements will contribute to a more accurate determination of corresponding ground-state photoneutron reaction rates, which are part of a broader effort of constraining statistical nuclear models needed to calculate stellar nuclear reaction rates relevant for the astrophysical p -process nucleosynthesis.
We report the extraction of 73 As, 75 Se, 197 mHg, 212 Pb and 210 Po on Eichrom pre-filter resin was studied in HCl and HNO 3 with batch uptake, kinetic and column experiments. There was significant extraction of mercury in HNO 3 and HCl, and polonium and selenium in HCl. The kinetics are sufficient to allow for retention on pre-filter columns, and separations of 73 As from 75 Se and 197 mHg, and 212 Pb from 210 Po are demonstrated. This retention is important for the development of chemical separations as pre-filter resin is commonly used alongside extraction chromatography resins but its potential for uptake of metal ions is not well characterized.
Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta 2 Pd 3 Se 8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy (TEM) and transport measurements reveal the as-fabricated Ta 2 Pd 3 Se 8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low-frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.
Complex magnetic materials are extremely attractive for revealing unconventional spin states and novel magnetic excitations. Here, we report the structural, thermodynamic, and magnetic properties of a novel magnetic material Li 2 Co 3 Se 4 O 12 based on x-ray and neutron diffraction, specific heat, magnetization, and x-ray photoelectron spectroscopy measurements. X-ray and neutron diffraction refinements reveal two Co sites Co (1) and Co (2) even though both are in the octahedral environment. While they are not connected along the b and c directions, these octahedra are edge-shared forming the Co (2) – Co (1) – Co (2) trimer chain along the a direction. The magnetic susceptibility exhibits the Curie-Weiss (CW) temperature dependence at high temperatures (above ∼50 K) with the negative CW temperature, a dip centered at T ⁎ ∼ 8.0 K, and an antiferromagnetic transition at T N = 3.3 K. The specific heat confirms that there is a phase transition at T N and a hump at T ⁎ . The long-range magnetic transition at T N implies that, in addition to the intra-chain interaction, there is strong inter-chain interaction, which is likely due to polarized SeO 3 bridging between chains. Single crystal neutron diffraction refinement reveals a complex magnetic structure with the angle between Co (1) and Co (2) moments ∼105°. Within the Co (2) – Co (1) – Co (2) trimer, two Co (2) moments are parallelly aligned. Surprisingly, the Co (1) moment (1.92μB) is only half of the Co (2) moment (3.96μB). There is likely the spin-state change for Co (1) from the high-spin state at T > T ⁎ to the low-spin state at T < T ⁎ , causing a dip in the magnetic susceptibility and a hump in the specific heat. When the magnetic field is applied, multiple metamagnetic transitions are found in all directions, implying field-driven magnetic excitations. Our results demonstrate rich magnetic properties of Li 2 Co 3 Se 4 O 12 that are sensitive to the external stimuli such as the magnetic field.
CdZnTe (CZT) detectors with more than 10% zinc content did not show a remarkable improvement in the detector performance due to the additional defects introduced by the higher zinc content. However, recent research showed that the formation of defects was suppressed effectively by adding a small amount of selenium (2%) in CZT. On this basis, we attempted to enhance the detector performance through bandgap engineering by increasing the zinc content up to 25 %, while adding 2 % of selenium. Multiple CdZnTeSe (CZTS) ingots with Zn = 10, 12.5, 15, 20 and 25%, while fixing the Se composition at 2%, were grown by the Bridgman method. The bandgap of CZTS for the different Zn and Se contents was analyzed and then equations for predicting the bandgap for other alloy compositions were introduced. Furthermore, the crystallinity of CZTS was evaluated by photoluminescence measurements. The pulse height spectra for Am-241 and Co-57 sources were used to evaluate the detector performance for the CZTS samples.
The p-nuclei are the few stable nuclei heavier than iron on the neutron-deficient side of the valley of stability that cannot be produced through astrophysical neutron-capture reactions. The limited experimental data on reactions through which the p-nuclei might be produced leaves the origin of their production largely unknown. This work presents the first cross section measurements of the 76 Se(α,γ) 80 Kr reaction. The rate of the time reversed reaction, 80 Kr(γ,α) 76 Se, is one of the most uncertain of possible reactions which can occur at the 80 Kr branching point on the ,-process photo-disintegration pathway. The reaction flow through 80 Kr will directly affect the final abundance of the p nuclide 78 Kr. Experimental cross sections at two astrophysically relevant energies are reported and compared to cross sections calculated using Hauser-Feshbach codes TALYS, NON-SMOKER, and SMARAGD. The success of these first (α,γ) cross section measurements performed in inverse kinematics in the energy region of the γ-process opens the door for future studies of reactions on radioactive γ-process nuclides.
Phase-pure CuIn 2 Se 4 , a ternary metal chalcogenide that forms in a disordered stannite crystal structure, was synthesized to investigate the structure thermal property relationships as well as reveal the origin of the ultralow thermal conductivity this material possesses over a large temperature range. Modeling of the temperature-dependent heat capacity and thermal conductivity revealed distinctive thermal properties and large lattice anharmonicity. Electron localization function calculations highlight the asymmetric bonding inherent to CuIn 2 Se 4 , which together with lattice anharmonicity directly impacts the thermal properties. Our findings reveal the specific atomic arrangement and bonding governing the thermal properties of this ternary metal chalcogenide. Our findings underscore the specific atomic arrangement and bonding governing the thermal properties in this ternary chalcogenide. This study advances the fundamental understanding of stannites, and our findings can be applied to these and other multinary metal chalcogenides of interest for applications where low thermal conductivity is desirable.
Arsenic (As) has been shown to be an effective p-type dopant for CdTe, although high performance in As-doped devices remains difficult to achieve. Arsenic is prone to self-compensation in CdTe, as evidenced by the accumulation of dopant atoms in CdTe/Cd(Se,Te) near the interface with MgxZn1-xO (MZO). In this study, we use SCAPS 1D modeling software to investigate the effect of near-interface compensation, helping elucidate loss pathways in present-day As-doped devices and informing future growth directions. We consider three possible results of As accumulation: shallow donors, deep recombination centers, and a thin layer of excess acceptor accumulation. The reduction in near-interface carrier concentration caused by shallow donors is shown to improve open-circuit voltages (VOC), whereas deep levels are detrimental to all performance parameters. The thin charge layer affects capacitance-voltage (CV) measurements by reducing the depletion width while maintaining the same carrier concentration, replicating CV behavior that has been observed in actual devices. These results illustrate the importance of monitoring dopant accumulation within 100 nm of the interface, and suggest that reducing or eliminating the As concentration in this region would be beneficial. An undoped Cd(Se,Te) layer at the interface is suggested as a possible device structure to boost performance.
Single crystals of Nb 2 Pd x Se 5 have been grown covering a broad range of palladium stoichiometries, from x = 0.68 to x = 0.95 (Pd2 occupancies 0.36 and 0.90 respectively). Miscibility gaps in the Pd stoichiometry range are related to superstructures resulting from staged filling and ordering of the partially filled Pd atom site (Pd2, Wyckoff site 2a). For Pd2 near 1/2 occupancy, a superstructure based on an incommensurate occupation wave with modulation along the monoclinic b-axis is identified. Here, a superconducting dome is found for Pd2 occupancies above 0.58, with maximum Tc for Pd2 occupancy of approximately 2/3. DFT calculations for the fully and 1/2 occupied Pd2 site show that Nb 2 Pd x Se 5 can be considered an intercalation compound for Pd2 occupancy above the minimum required for structural stability.
ACuZrQ 3 (A = Rb, Cs; Q = S, Se, Te) were synthesized as black platelet crystals. RbCuZrS 3 , RbCuZrSe 3 , and CsCuZrS 3 crystallize in the KCuZrSe 3 structure type with space group Cmcm, and RbCuZrTe 3 and CsCuZrTe 3 crystallize in the lower symmetry space group Pnma. The tellurides exhibit a second order Jahn-Teller distortion with off-centering of Zr in its octahedral environment. The magnitude of the distortion is larger in RbCuZrTe 3 than in CsCuZrTe 3 . The structures of beta-CsCuS 4 and Rb 2 Cu 5 Te 5 were also determined. CsCuZrS 3 melts at 910 C-circle and exhibits partial decomposition upon heating at 275 C-circle, while CsCuZrTe 3 melts incongruently. Our DFT calculations of RbCuZrQ 3 (Q = S, Se) and CsCuZrS 3 indicate direct gap semiconductors in agreement with experiments. ACuZrTe 3 (A = Rb, Cs) were calculated to be metals which was confirmed for RbCuZrTe 3 with variable temperature conductivity measurements and consistent with heat capacity measurements. Spectroscopic measurements found a bandgap and work function of 1.44(5) eV and 4.89(5) eV for RbCuZrS 3 and 0.95(5) eV and 4.67(5) eV for RbCuZrSe 3 , respectively. Finally, RbCuZrTe 3 did not exhibit an optical bandgap and has a work function of 4.64(5) eV. RbCuZrTe 3 exhibits a low thermal conductivity under 0.5 W m -1 K -1 at room temperature.
Nonmagnetic FeNb 3 Se 10 has been demonstrated to be an insulator at ambient pressure through both theoretical calculations and experimental measurements, and it does not host topological surface states. Here, we show that on the application of pressure, FeNb 3 Se 10 transitions to a metallic state at around 3.0 GPa. With a further increase in pressure, its resistivity becomes independent of both temperature and pressure. Its crystal structure is maintained to at least 4.4 GPa.