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At least 199 records · Page 11

Topologically derived dislocation theory for twist and stretch moiré superlattices in bilayer graphene

In this work, we develop a continuum dislocation description of twist and stretch moiré superlattices in two-dimensional material bilayers. The continuum formulation is based on the topological constraints introduced by the periodic dislocation network associated with the moiré structure. The approach is based on solving analytically for the structural distortion and displacement fields that satisfy the topological constraints and that minimize the total energy. The total energy is described by both the strain energy of each individual distorted layer and a Peierls-Nabarro-like interfacial contribution arising from stacking disregistry. The dislocation core emerges naturally within the formalism as a result of the competition between the two contributions. The approach presented here captures the structure and energetics of twist and stretch moiré superlattices of dislocations with arbitrary direction and character, without assuming an analytical solution a priori and while accounting naturally for dislocation-dislocation image interactions. In comparisons to atomistic simulations using classical potentials, the maximum structure deviation is 6%, while the maximum line energy deviation is 0.019 eV/Å. Several applications of our model are shown, including predicting the variation of structure with twist angle and describing dislocation line tension and junction energies.

36 MATERIALS SCIENCE↗

Moiré quantum chemistry: Charge transfer in transition metal dichalcogenide superlattices

Transition metal dichalcogenide (TMD) bilayers have recently emerged as a robust and tunable moiré system for studying and designing correlated electron physics. In this Rapid Communication, by combining a large-scale first-principles calculation and continuum model approach, we provide an electronic structure theory that maps long-period TMD heterobilayer superlattices onto diatomic crystals with cations and anions. We find that the interplay between the moiré potential and Coulomb interaction leads to filling-dependent charge transfer between different moiré superlattice regions. Further, we show that the insulating state at half filling found in recent experiments on WSe 2 /WS 2 is a charge-transfer insulator rather than a Mott-Hubbard insulator. Our work reveals the richness of simplicity in moiré quantum chemistry.

36 MATERIALS SCIENCE↗

In situ coherent x-ray scattering reveals polycrystalline structure and discrete annealing events in strongly coupled nanocrystal superlattices

Solution-phase bottom up self-assembly of nanocrystals into superstructures such as ordered superlattices is an attractive strategy to generate functional materials of increasing complexity, including very recent advances that incorporate strong interparticle electronic coupling. While the self-assembly kinetics in these systems have been elucidated and related to the product characteristics, the weak interparticle bonding interactions suggest the superstructures formed could continue to order within the solution long after the primary nucleation and growth have occurred, even though the mechanism of annealing remains to be elucidated. Here, we use a combination of Bragg coherent diffractive imaging and x-ray photon correlation spectroscopy to create real-space maps of supercrystalline order along with a real-time view of the strain fluctuations in aging strongly coupled nanocrystal superlattices while they remain suspended and immobilized in solution. By combining the results, we deduce that the self-assembled superstructures are polycrystalline, initially comprising multiple nucleation sites, and that shear avalanches at grain boundaries continue to increase crystallinity long after growth has substantially slowed. This multimodal approach should be generalizable to characterize a breadth of materials in their native chemical environments, thus extending the reach of high-resolution coherent x-ray characterization to the benefit of a much wider range of physical systems. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

Generation and control of nonlocal chiral currents in graphene superlattices by orbital Hall effect

Graphene-based superlattices offer a unique materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structures lacking inversion symmetry, have been discussed as possible mechanisms for developing . Here, we report nonlocal transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to sizable temperatures. The measured sign dependence of the nonlocal signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of manipulation of the transverse flow of orbital information that could enable the design of orbitronic devices. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Engineering 2D Square Lattice Hubbard Models in 90° Twisted GeX/SnX (X =S, Se) Moiré Superlattices

Because of the large-period superlattices emerging in moiré two-dimensional (2D) materials, electronic states in such systems exhibit low energy flat bands that can be used to simulate strongly correlated physics in a highly tunable setup. While many investigations have thus far focused on moiré flat bands and emergent correlated electron physics in triangular, honeycomb, and quasi-one-dimensional lattices, tunable moiré realizations of square lattices subject to strong correlations remain elusive. Here, in this work, we propose a feasible scheme to construct moiré square lattice systems by twisting two or more layers of 2D materials in a rectangular lattice by 90°. We demonstrate the concept with twisted GeX/SnX (X =S, Se) moiré superlattices and calculate their electronic structures from first principles. We show that the lowest conduction flat band in these systems can be described by a square lattice Hubbard model with parameters which can be controlled by varying the choice of host materials, number of layers, and external electric fields. In particular, twisted double bilayer GeSe realizes a square lattice Hubbard model with strong frustration due to the next-nearest-neighbor hopping that could host unconventional superconductivity, in close analogy to the Hubbard model for copper-oxygen planes of cuprate high-temperature superconductors. The presented scheme uses 90° twisted 2D materials with rectangular unit cells as a promising platform for realizing the physical phenomena of square lattice Hubbard models, establishing a new route for studying its rich phase diagram of magnetism, charge order, and unconventional superconductivity in a highly tunable setting.

2-dimensional systems↗

Three-dimensional superlattice engineering with block copolymer epitaxy

Three-dimensional (3D) structures at the nanometer length scale play a crucial role in modern devices, but their fabrication using traditional top-down approaches is complex and expensive. Analogous to atomic lattices, block copolymers (BCPs) spontaneously form a rich variety of 3D nanostructures and have the potential to substantially simplify 3D nanofabrication. Here, we show that the 3D superlattice formed by BCP micelles can be controlled by lithographically defined 2D templates matching a crystallographic plane in the 3D superlattice. Using scanning transmission electron microscopy tomography, we demonstrate precise control over the lattice symmetry and orientation. Excellent ordering and substrate registration can be achieved, propagating through 284-nanometer-thick films. BCP epitaxy also showed exceptional lattice tunability, with a continuous Bain transformation from a body-centered cubic to a face-centered cubic lattice. Lattice stability was mediated by molecular packing frustration, and surface-induced lattice reconstruction was observed, leading to the formation of a unique honeycomb lattice.

42 ENGINEERING↗

A composite electrodynamic mechanism to reconcile spatiotemporally resolved exciton transport in quantum dot superlattices

Quantum dot (QD) solids are promising optoelectronic materials; further advancing their device functionality requires understanding their energy transport mechanisms. The commonly invoked near-field Förster resonance energy transfer (FRET) theory often underestimates the exciton hopping rate in QD solids, yet no consensus exists on the underlying cause. In response, we use time-resolved ultrafast stimulated emission depletion (STED) microscopy, an ultrafast transformation of STED to spatiotemporally resolve exciton diffusion in tellurium-doped cadmium selenide–core/cadmium sulfide–shell QD superlattices. We measure the concomitant time-resolved exciton energy decay due to excitons sampling a heterogeneous energetic landscape within the superlattice. The heterogeneity is quantified by single-particle emission spectroscopy. This powerful multimodal set of observables provides sufficient constraints on a kinetic Monte Carlo simulation of exciton transport to elucidate a composite transport mechanism that includes both near-field FRET and previously neglected far-field emission/reabsorption contributions. Uncovering this mechanism offers a much-needed unified framework in which to characterize transport in QD solids and additional principles for device design.

36 MATERIALS SCIENCE↗

Electronic commensuration of a spin moiré superlattice in a layered magnetic semimetal

Spin moiré superlattices (SMSs) have been proposed as a magnetic analog of crystallographic moiré systems and a source of electron minibands offering vector-field moiré tunability and Berry curvature effects. However, it has proven challenging to realize an SMS in which a large exchange coupling J is transmitted between conduction electrons and localized spins. Furthermore, most systems have carrier mean free paths l mfp shorter than their spin moiré lattice constant a spin , inhibiting miniband formation. Here, we discover that the layered magnetic semimetal EuAg 4 Sb 2 overcomes these challenges by forming an interface with J ~ 100 milli–electron volts transferred between a Eu triangular lattice and anionic Ag 2 Sb bilayers hosting a two-dimensional electron band in the ballistic regime (l mfp >> a spin ). The system realizes an SMS with a spin commensurate with the Fermi momentum, leading to a marked quenching of the transport response from miniband formation. Our findings demonstrate an approach to magnetically engineering moiré superlattices and a potential route to an emergent spin-driven quantum Hall state.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

GaAs-based superlattice photocathodes manufactured using MOCVD provide spin polarization > 90% and quantum efficiency > 1%

Spin-polarized electron beams are important for nuclear physics research performed at electron accelerators. Over many years, beam polarization has increased significantly, from 35% provided by unstrained bulk GaAs, to ~ 75% using single strained-layer GaAs, to ~ 90% using strained-superlattice GaAs photocathodes grown using molecular beam epitaxy (MBE). Commercial vendors once provided high-polarization photocathodes but today there is little interest in supporting this small market. Here, we report successful results fabricating high polarization GaAs/GaAsP superlattice photocathodes using metal organic chemical vapor deposition (MOCVD), a method dismissed by some as not providing sufficient control of layer thickness and uniformity. The best samples provide spin polarization greater than 90% and quantum efficiency (QE) exceeding 2%, with QE enhanced using a distributed Bragg reflector (DBR) incorporated into the structure. Together, these quantities represent some of the best results ever reported for high polarization photocathodes. Enhanced QE via DRB is very important for future work at CEBAF/Jefferson Lab because it will simplify the production of polarized electron beams at milliampere current needed for a polarized positron source.

Poelker, Matt↗

Subbarrier absorption in a stationary superlattice

The calculation of the interband absorption coefficient was carried out in the classical case, when the frequency of light was assumed to bind two miniband subbarrier states of different bands. The influence of two dimensional Mott excitons on this absorption was studied and a comparison was made with the experiment. All of these considerations were done taking into account the photon wave vector (the phase spatial heterogeneity). The basic traits of the energy spectra of superlattice semiconductors, their kinetic and optical properties, and possible means of electromagnetic wave intensification were examined. By the density matrix method, a theory of electrical and electromagnetic properties of superlattices was suggested.

Arutyunyan, G. M.↗

Semiconductor superlattice photodetectors

Two novel types of superlattice photodetectors were studied. The first was a superlattice photomultiplier and the second a photodetector based on the real space transfer mechanism. A summary of the results is presented.

Chuang, S. L.↗

A possible radiation-resistant solar cell geometry using superlattices

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Goradia, C.↗

Superlattices and NiPi structures in new forms of cascade solar cells

The activity in the field of photovoltaic semiconductor superstructures is described. Progress was accomplished in the two principal directions previously defined in our initial proposal, i.e.: (1) Theoretical investigation of the optical properties of superlattices; and (2) New solar cell concepts and device modeling. Although important information concerning the optical constants of superlattices and multiple quantum well structures was obtained from our computer model, most of the theoretical efforts have progressively shifted from the former to the latter aspect of the project because of the discovery of a new kind of photovoltaic device which may exhibit improved performances with respect to conventional solar cells.

Leburton, J. P.↗

Electron and hole impact ionization coefficients in GaAs-Al(x)Ga(1-x)As superlattices

Electron and hole multiplication and impact ionization coefficients have been measured with pure carrier injection in p(+)-n(-)-n(+) diodes grown by molecular beam epitaxy. Values of the electron and hole ionization coefficient ratio alpha/beta = 2-5 are measured for superlattices with well width Lz greater than or equal to 100 A and alpha/beta greater than 10 is measured in a graded band-gap superlattice with a total well and barrier width LB + LZ = 120 A. The ratio decreases and becomes less than unity for smaller well sizes. This is caused by an increase in beta (E) while alpha (E) remains fairly constant. The results have been interpreted by considering varying hole confinement and scattering in the coupled quantum wells.

Juang, F.-Y.↗

High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array

High-speed (1 Gbit/x) dual-wavelength demultiplexing and detection in a monolithic linear array of superlattice p-i-n photodetectors in a waveguide configuration is demonstrated. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum-confined Stark effect in the superlattice p-i-n diodes.

Larsson, A.↗

A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation tolerance

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Goradia, Chandra↗

LWIR detector arrays based on nipi superlattices

It is proposed that nipi superlattice structures in InSb or InAs can be grown with modern techniques to achieve tunable and stable LWIR detectors with high performance. Key device and material considerations for the application of such nipi superlattices to LWIR detectors are examined. It is shown that practical absorption coefficients (of about 100/cm) can be achieved with high doping concentrations (of about 10 to the 19th/cu cm) achievable in these materials. In particular, recent delta doping techniques being developed in molecular beam epitaxy offer promise of higher doping concentrations, improved uniformity, and greater flexibility in tailoring the structures for optimum detector performance.

Maserjian, J.↗

Intersubband infrared absorption in Ge(x)Si(1-x)/Si superlattice by photocurrent measurement

The intersubband IR absorption of holes in a Ge(x)Si(1-x)/Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first of the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.

Karunasiri, R. P. G.↗