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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Multimodal Nanoscale Tomographic Imaging for Battery Electrodes

Accurate representations of the 3D structure within a lithium-ion battery are key to understanding performance limitations. However, obtaining exact reconstructions of electrodes, where the active particles, the carbon black and polymeric binder domain, and the pore space are visualized is challenging. In this work, it is shown that multimodal imaging can be used to overcome this challenge. High-resolution ptychographic X-ray computed tomography are combined with lower resolution but higher contrast transmission X-ray tomographic microscopy to obtain 3D reconstructions of pristine and cycled graphite-silicon composite electrodes. This cross-correlation enables quantitative analysis of the surface of active particles, including the heterogeneity of carbon-black and binder domain and solid-electrolyte interphase coverage. Capturing the active particles as well as the carbon black-binder domain allows using these segmented structures for electrochemical simulations to highlight the influence of the particle embedding on local state of charge heterogeneities.

25 ENERGY STORAGE↗
DOE OSTI2022

Experimental and analytical study of the hydrodynamic and single and two-phase convective heat transfer performance of flexible PDMS microchannels with micropillar arrays

Various copper and silicon based thermal management systems are used in the cooling of electronics. However, the rigid nature of these materials along with their high thermal and electrical conductivity pose a difficulty in developing direct contact embedded flexible cooling systems that can offer robust cooling performance. The low density, thermal stability, chemical inertness, and electrical insulation of Polydimethylsiloxane (PDMS) make it an ideal material to develop lightweight direct contact thermal management systems for electronics. Its ease of fabrication with tunable flexibility provides the opportunity to go beyond traditional electronics and develop advanced active and passive thermal management systems for a wide–range of applications in foldable and wearable electronics, liquid cooling garments, microgravity, and electric motors. In this study, a flexible PDMS based microchannel with micropillar arrays, which enhance the thermal performance of the device through capillary-assisted flow, has been developed. The hydrodynamic and convection heat transfer performance of three PDMS wick pillar geometries, ranging from a porosity of 0.8–0.91, are investigated and compared under single-phase and two-phase conditions. Dielectric coolant FC-3283 is employed and permeability measurements are made for mass fluxes ranging from 53 kg/m 2 s to 369 kg/m 2 s. Given its conformability, the device demonstrates a deviation from Darcy’s Law, within the laminar regime, with an increasing permeability with mass flux at the rate of ~0.5–0.8 Darcy/(kg/m 2 s). A semi-analytical model has been developed and reported to quantify the conformability of the device. The heat transfer performance is experimentally evaluated using the same dielectric fluid for mass flux ranging from 105 kg/m 2 s to 420 kg/m 2 s with heat fluxes ranging from 1.5 W/cm 2 to 16 W/cm 2 . Heat transfer coefficients of up to 7000 W/m 2 K are observed, which are comparable to copper and silicon microchannels. The effect of porosity on the single phase thermal performance has been evaluated against the pumping power to provide a basis for thermal management system design. Finally, high-speed imaging is performed to study the two-phase flow characteristics to provide insight into the vapor formation and removal.

42 ENGINEERING↗
DOE OSTI2026

Screen-Printed SHJ Solar Cells with Complex Silver Inks

Metallization using complex metal inks has gained significant research interest due to its cost-effectiveness and ability to achieve performance comparable to traditional nanoparticle pastes. This study introduces the use of complex silver (Ag) inks applied via industrial screen-printing for silicon heterojunction (SHJ) solar cell metallization. The printed Ag lines exhibit a contact resistivity on SHJ tin-doped indium oxide (ITO) surfaces as low as approximately 0.2-12 mO cm2. Photoluminescence imaging reveals minimal surface passivation degradation (iVoc < 3.5 mV), while scanning electron microscopy (SEM) shows a denser structure compared to Ag layer from nanoparticle pastes. The printed Ag grid features thin (approximately 1 micrometer), continuous fingers approximately 100-120 micrometer wide, significantly thinner than conventional approximately 20-30 micrometer fingers produced with nanoparticle-based pastes. Double printing achieves SHJ device efficiencies exceeding 20%, the highest reported for industrial solar cell precursors using this technology. These findings highlight the potential of complex Ag inks as a sustainable alternative to particle-based pastes, reducing Ag consumption and processing temperatures without compromising efficiency.

14 SOLAR ENERGY↗
DOE OSTI2023

A Method To Characterize Metalenses For Light Collection Applications

Metalenses and metasurfaces are promising emerging technologies that could improve light collection in light collection detectors, concentrating light on small area photodetectors such as silicon photomultipliers. Here we present a detailed method to characterize metalenses to assess their efficiency at concentrating monochromatic light coming from a wide range of incidence angles, not taking into account their imaging quality.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Wide Dynamic Range, 10 kHz Framing Detector for 4D-STEM

Hybrid pixel array detectors (PADs) have expanded the fidelity, frame rate and dynamic range for diffractive imaging in electron microscopes. With their high detective quantum efficiencies (DQE), the noise performance limited is by counting statistics. Consequently, improving the precision and quality of high-speed images requires increasing the linear dynamic range and the maximum usable beam current. Here we describe a new prototype hybrid PAD, our next-generation electron microscope pixel array detector (NG-EMPAD) that expands both the framing speed and dynamic range of our earlier EMPAD design. Like the EMPAD, electrons are detected directly in a 500 μm thick silicon sensor bonded pixel-by-pixel to a custom signal processing integrated circuit (IC). Each pixel in the IC integrates charge carriers produced by the high-energy incident electrons. Here, in-pixel circuitry uses a combination of techniques to extend the dynamic range, including adaptive gain switching and the quantitative excess charge dumping similar to the EMPAD. In-pixel buffering of signals during readout allows acquiring a new image while reading out the previously collected image, yielding an image collection duty cycle of nearly 100%.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory

Abstract Donor spins in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon.

Joecker, Benjamin (ORCID:0000000302635440)↗
DOE OSTI2022

Quasiparticle spectroscopy, transport, and magnetic properties of Nb films used in superconducting transmon qubits

Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, quasiparticle spectroscopy, and real-space real-time magneto-optical imaging. We study niobium films to provide an example of a comprehensive analytical set that may benefit superconducting circuits such as those used in quantum computers. The films show outstanding superconducting transition temperature of $T_{c}=9.35$ K and a fairly clean superconducting gap, along with superfluid density enhanced at intermediate temperatures. These observations are consistent with the recent theory of anisotropic strong-coupling superconductivity in Nb. However, the response to the magnetic field is complicated, exhibiting significantly irreversible behavior and insufficient heat conductance leading to thermo-magnetic instabilities. These may present an issue for further improvement of transmon quantum coherence. Possible mitigation strategies are discussed.

Joshi, Kamal R.↗
DOE OSTI2024

Soft X-ray quantum efficiency of a commercial CMOS imaging sensor

The demonstrated performance and cost-effectiveness of complementary metal-oxide-semiconductor (CMOS) sensors make them a potentially attractive option for low-cost space-based X-ray observatories. We have previously reported on the performance of a commercially available backside-illuminated Sony IMX290LLR-C CMOS sensor and found it to offer X-ray spectral resolutions comparable to the charged coupled devices (CCDs) aboard Suzaku and Chandra and to have a sufficient radiation hardness for use in low Earth orbit. Here, in this work, we report on the quantum efficiency (QE) of this sensor, an essential metric for modeling the sensitivity of an instrument as an X-ray detector. Using the Advanced Photon Source at Argonne National Laboratory, we measure the soft X-ray QE of this CMOS sensor to be 0.28 ± 0.02 at a photon energy of 490.5 eV. This energy was chosen for its proximity to the astrophysically important O VII triplet emission lines (~574 eV) studied by the HaloSat mission. Although not surpassing that of the back-illuminated CCDs aboard Suzaku and Chandra, this QE compares favorably to that of the front-illuminated CCDs aboard the same observatories and is competitive with that of the silicon drift detectors used aboard HaloSat, making it a strong candidate for use on future X-ray small satellite (SmallSat) missions.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Fabrication of single color centers in sub-50 nm nanodiamonds using ion implantation

Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV – ) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye–Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)-based SiV – centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV – centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV– centers featuring stable high-purity single-photon emission through Si implantation into NDs with an average size of ~20 nm. We observe room temperature emission, with zero-phonon line wavelengths in the range of 730–800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group-IV diamond color centers with applications in quantum photonics, sensing, and biomedicine.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Controlled removal of hydrogen atoms from H-terminated silicon surfaces

The controlled formation of dangling bond structures on a H-terminated silicon surface is the first step in an atomically precise method of fabrication of silicon quantum electronic devices. An ultrahigh vacuum scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from a Si(100)-2x1:H surface by injecting electrons with the sample held at a positive bias voltage. The authors propose a lithography method that allows the STM to operate under negative bias imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative bias voltage to deliver the required energy for hydrogen removal. The resulting current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM’s feedback control loop. The authors show that the chance of tip-sample crash during the lithography process is reduced by employing this method. They also demonstrate that this approach offers a significant potential for controlled and precise removal of H atoms from a H-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

42 ENGINEERING↗
DOE OSTI2025

Spectral kernel machines with electrically tunable photodetectors

Spectral machine vision collects spectral and spatial information as three-dimensional hypercubes and digitally processes them, which causes a data bottleneck, limiting power efficiency, frame rate, and spectral-spatial resolution. This work introduces spectral kernel machines (SKMs) to overcome these bottlenecks. SKM directly compresses spectral analysis through the output photocurrent and learns from example objects to identify and classify new samples in a "sniff-and-seek" mode. We experimentally demonstrated SKMs with electrically tunable bipolar black phosphorus-molybdenum disulfide (bP-MoS2) photodiodes in the near- and mid-infrared band and silicon photoconductors in the visible band, performing versatile intelligent tasks from chemometrics to semiconductor metrology. This architecture consumed substantially less power and was more than an order of magnitude faster than existing solutions for hyperspectral image analysis, defining an intelligent imaging and sensing paradigm with intriguing possibilities.

Zhang, Dehui↗
DOE OSTI2024

Laser‐Sintered Silver Metallization for Silicon Heterojunction Photovoltaic Cells

Herein, a novel metallization technique is reported for crystalline silicon heterojunction (SHJ) solar cells in which silver (Ag) fingers are printed on the SHJ substrates by dispensing Ag nanoparticle‐based inks through a needle and then sintered with a continuous‐wave carbon dioxide (CO 2 ) laser. The impact of the Ag ink viscosity on the line quality and the line resistance is investigated on three Ag inks with different viscosities. Increasing ink viscosity yields higher Ag contact heights, larger aspect ratios, and lower line resistance values. The Ag line height increases from less than a micrometer to ≈18.62 ± 3.48 μm with the increasing viscosity. Photoluminescence imaging shows that the low‐resistance Ag metal contacts obtained do not result in any passivation damage of the SHJ substrate. This is because the wavelength of light emitted from the CO 2 laser (i.e., 10.6 μm) leads to optical absorption in the Ag, but this light is effectively transparent to the transparent conductive oxide film, amorphous silicon films, and crystalline silicon substrate. Bulk resistivity values as low as 6.5 μΩ cm are obtained for the laser‐sintered Ag contact and printed using the Ag ink with the highest viscosity in this work.

Mousumi, Jannatul Ferdous↗
DOE OSTI2021

Additive Lithography–Organic Monolayer Patterning Coupled with an Area-Selective Deposition

The combination of area-selective deposition (ASD) with a patternable organic monolayer provides a versatile additive lithography platform, enabling the generation of a variety of nanoscale feature geometries. Stearate hydroxamic acid self-assembled monolayers (SAMs) were patterned with extreme ultraviolet (λ = 13.5 nm) or electron beam irradiation and developed with ASD to achieve line space patterns as small as 50 nm. Density functional theory was employed to aid in the synthesis of hydroxamic acid derivatives with optimized packing density to enhance the imaging contrast and improve dose sensitivity. Near-edge X-ray absorption fine structure spectroscopy and infrared spectroscopy reveal that the imaging mechanism is based on improved deposition inhibition provided by the cross-linking of the SAM to produce a more effective barrier during a subsequent deposition step. With patterned substrates composed of coplanar copper lines and silicon spacers, hydroxamic acids selectively formed monolayers on the metal portions and could undergo a pattern-wise exposure followed by ASD in the first combination of a patternable monolayer with ASD. This material system presents an additional capability compared to traditional ASD approaches that generally reflect a starting patterned surface. Finally, this bottoms-up additive approach to lithography may be a viable alternative to subtractive nanoscale feature generation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Characterization of Field-Exposed Photovoltaic Modules Featuring Signs of Contact Degradation

Here, this work investigates several photovoltaic (PV) modules that have shown signs of metal contact corrosion due to field exposure in a hot and humid climate. This includes two multicrystalline silicon aluminum back surface field systems with 10 and 14 years of exposure and one monocrystalline silicon passivated emitter and rear cell system with four years of exposure. A comprehensive, multiscale characterization process is used to evaluate these PV modules in great detail. Current–voltage (I−V), Suns-V OC measurements, electroluminescence imaging, infrared imaging, and ultraviolet fluorescence imaging were performed, and locations of interest were cored and analyzed using cross-sectional scanning electron microscopy (SEM). A rigorous, quantitative analysis procedure for the cross-sectional SEM images is proposed and implemented. Careful characterization does reveal that some of these PV modules do indeed exhibit the same classic signs of acetic-acid-based corrosion of the glass frit that is present at the silver/silicon interface, which have been observed previously in PV modules exposed to damp heat in an environmental chamber.

14 SOLAR ENERGY↗
DOE OSTI2023

Quasiparticle Spectroscopy, Transport, and Magnetic Properties of Nb Films Used in Superconducting Qubits

Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, the London penetration depth - based quasiparticle spectroscopy, and real-space real-time magneto-optical imaging. Here we study niobium films to provide an example of a comprehensive analytical set that may benefit superconducting circuits such as those used in quantum computers. The films have a superconducting transition temperature of T c = 9.35 K and a fairly clean superconducting gap. The estimated superfluid density is enhanced at intermediate temperatures. These observations are consistent with the recent theory of anisotropic strong-coupling superconductivity in Nb and indicate outstanding quality. However, the response to the magnetic field is complicated, exhibiting significantly irreversible behavior and insufficient heat dissipation (to a substrate), leading to thermomagnetic instabilities. This may present a challenge for further improvement of transmon quantum coherence. Possible mitigation strategies are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution

Ion implantation is a robust and established method to customize the electronic properties of Si. However, fabricating doped, ultrafine semiconductor nanostructures can be challenging. Ion implantation has well-established effects on the dry etch rates of Si, which becomes increasingly consequential as the target dimension shrinks below a few tens of nanometers. While dry etching arrays of block copolymer-templated nanoscale holes (pitch = 37.5 nm, diameter ~25 nm) into p-type, n-type, and undoped Si, we observed that the lateral etch rate was notably larger for the n-type regions than p-type or undoped regions. By doing image analyses on high resolution electron micrographs of the nanostructured hole arrays, we were able to extract the porosity and average radii of the holes with subnanometer sensitivity and compare the relative etch rates between different doping conditions. We found that degenerately doped n-type silicon consistently etches between approximately 17% and 27% faster in the lateral direction than p-type Si, resulting in significantly larger porosity and, consequently, less mechanical stability. Here, we demonstrate that top-down dimensional analysis of a densely packed porous nanostructure is a robust method for assessing extremely small differences in the lateral, chemical etch rate of doped Si to a degree of sensitivity that was previously unachievable. The minute, dense-packed nature of block copolymer self-assembled nanostructures is shown to be ideal for this application. This proposed method could be useful for designing fabrication processes for heterogeneous nanostructures, as slight dry etch rate variations that may be within process tolerance at the micrometer-scale appear to have nontrivial consequences at the nanometer scale.

42 ENGINEERING↗
DOE OSTI2024

Assessment of Accelerated Stress Testing Data for Silicon Photovoltaics Using Tensor Decomposition Methods

In this work, we examine the use of high-order tensor decompositions to analyze degradation pathways emerging from accelerated stress testing of silicon photovoltaic (PV) modules. Matrix-based decompositions are powerful tools for studying two-dimensional data arrays and form the foundation of a host of classical data analysis techniques. Tensors are high-order extrapolations of matrices that are able to account for more parameter dimensions, and a variety of tensor decomposition methods have been developed that similarly seek to extend insights from matrix decompositions to higher dimensions. Applying and interpreting tensor decomposition methods to sequences of PV module image data, we seek to uncover and isolate different degradation modes occurring from accelerated stress testing procedures. Further, we consider the contributions of different modes to PV module performance degradations.

data analysis↗
DOE OSTI2024

Benchmarking of X‐Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms

Abstract Single impurities in insulators are now often used for quantum sensors and single photon sources, while nanoscale semiconductor doping features are being constructed for electrical contacts in quantum technology devices, implying that new methods for sensitive, non‐destructive imaging of single‐ or few‐atom structures are needed. X‐ray fluorescence (XRF) can provide nanoscale imaging with chemical specificity, and features comprising as few as 100 000 atoms have been detected without any need for specialized or destructive sample preparation. Presently, the ultimate limits of sensitivity of XRF are unknown – here, gallium dopants in silicon are investigated using a high brilliance, synchrotron source collimated to a small spot. It is demonstrated that with a single‐pixel integration time of 1 s, the sensitivity is sufficient to identify a single isolated feature of only 3000 Ga impurities (a mass of just 350 zg). With increased integration (25 s), 650 impurities can be detected. The results are quantified using a calibration sample consisting of precisely controlled numbers of implanted atoms in nanometer‐sized structures. The results show that such features can now be mapped quantitatively when calibration samples are used, and suggest that, in the near future, planned upgrades to XRF facilities might achieve single‐atom sensitivity.

36 MATERIALS SCIENCE↗