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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Time-domain theory of transient heat conduction in the local limit

Ultrafast and nanoscale heat conduction demands a unified theoretical framework that rigorously bridges macroscopic transport equations with microscopic material properties derived from statistical physics. Existing empirical generalizations of Fourier's law often lack a solid microscopic foundation, failing to connect observed non-Fourier behavior with underlying atomic-scale mechanisms. In this work, we present a time-domain theory of transient heat conduction rooted in Zwanzig's statistical theory of irreversible processes. Central to this framework is the time-domain transport function $\overleftrightarrow{𝑍}$⁡(𝑡) defined through equilibrium time-correlation functions of heat fluxes. This function generalizes the conventional concept of steady-state thermal conductivity, governing the transition of conduction dynamics from onset second sound type wave propagation at finite speeds to diffusion-dominated behavior across broad temporal and spatial scales. Unlike phonon hydrodynamic models that rely on mesoscopic constructs such as phonon drift velocity, our approach provides a quantitative and microscopic description of intrinsic memory effects in transient heat fluxes and applies universally to bulk materials at any temperature or length scale. By integrating atomistic-scale first-principles calculations with continuum-level macroscopic equations, this framework offers a robust foundation for numerical simulations of transient temperature fields. Furthermore, it facilitates the interpretation and design of transient thermal grating experiments using nanometer-scale heat sources and ultrafast laser systems in the extreme ultraviolet and x-ray wavelength ranges, advancing our understanding of heat dissipation dynamics.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2019

Automotive Li-Ion Batteries: Current Status and Future Perspectives

Lithium-ion batteries (LIBs) are currently the most suitable energy storage device for powering electric vehicles (EVs) owing to their attractive properties including high energy efficiency, lack of memory effect, long cycle life, high energy density and high power density. These advantages allow them to be smaller and lighter than other conventional rechargeable batteries such as lead–acid batteries, nickel–cadmium batteries (Ni–Cd) and nickel–metal hydride batteries (Ni–MH). Modern EVs, however, still suffer from performance barriers (range, charging rate, lifetime, etc.) and technological barriers (high cost, safety, reliability, etc.), limiting their widespread adoption. Given these facts, this review sets the extensive market penetration of LIB-powered EVs as an ultimate objective and then discusses recent advances and challenges of electric automobiles, mainly focusing on critical element resources, present and future EV markets, and the cost and performance of LIBs. Finally, novel battery chemistries and technologies including high-energy electrode materials and all-solid-state batteries are also evaluated for their potential capabilities in next-generation long-range EVs.

25 ENERGY STORAGE↗
DOE OSTI2018

SimpleSSD: Modeling Solid State Drives for Holistic System Simulation

Existing solid state drive (SSD) simulators unfortunately lack hardware and/or software architecture models. Consequently, they are far from capturing the critical features of contemporary SSD devices. More importantly, while the performance of modern systems that adopt SSDs can vary based on their numerous internal design parameters and storage-level configurations, a full system simulation with traditional SSD models often requires unreasonably long runtimes and excessive computational resources. In this work, we propose SimpleSSD, a high-fidelity simulator that models all detailed characteristics of hardware and software, while simplifying the nondescript features of storage internals. In contrast to existing SSD simulators, SimpleSSD can easily be integrated into publicly-available full system simulators. Here, in addition, it can accommodate a complete storage stack and evaluate the performance of SSDs along with diverse memory technologies and microarchitectures. Thus, it facilitates simulations that explore the full design space at different levels of system abstraction.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures

The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ~32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ~2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ~51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ~1.4 times the natural linewidth. Furthermore, this method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.

36 MATERIALS SCIENCE↗
NASA NTRS1981

A solid-state digital temperature recorder for space use

A solid-state, digital, temperature recorder has been developed for use in space experiments. The recorder is completely self-contained and includes a temperature sensor; all necessary electronics for signal conditioning, processing, storing, control and timing; and a battery power supply. No electrical interfacing with the particular spacecraft on which the unit is used is required. The recorder is small, light, and sturdy, and has no moving parts. It uses only biocompatible materials and has passed vibration and shock spaceflight qualification tests. The unit is capable of storing 2048, -10 to +45 C, 8-bit temperature measurements taken at intervals selectable by factors of 2 from 1.875 to 240 min; data can be retained for at least 6 months. The basic recorder can be simplified to accommodate a variety of applications by adding memory to allow more data to be recorded, by changing the front end to permit measurements other than temperature to be made, and by using different batteries to realize various operating periods. Stored flight data are read out from the recorder by means of a ground read-out unit.

Westbrook, R. M.↗
DOE OSTI2021

Impact of Oxygen Non-Stoichiometry on Near-Ambient Temperature Ionic Mobility in Polaronic Mixed-Ionic-Electronic Conducting Thin Films

Enhanced ionic mobility in mixed ionic and electronic conducting solids contributes to improved performance of memristive memory, energy storage and conversion, and catalytic devices. Ionic mobility can be significantly depressed at reduced temperatures, for example, due to defect association and therefore needs to be monitored. Measurements of ionic transport in mixed conductors, however, proves to be difficult due to dominant electronic conductivity. This study examines the impact of different levels of quenched-in oxygen deficiency on the oxygen vacancy mobility near room temperature as measured by a novel dynamic current-voltage analysis. A Pr 0.1 Ce 0.9 O 2-δ film was grown by pulsed laser deposition and subsequently annealed, from 400-600° C, in various oxygen partial pressures to modify its oxygen vacancy concentration while minimizing microstructural growth and cation segregation. To monitor changes in film non-stoichiometry, we leverage the existence of an optical absorption center, related to the oxidation state of Pr ions in Pr0.1Ce0.9O2-δ. The oxygen vacancy migration enthalpy was found to exhibit a small increase from 0.73± 0.04 to 0.79 ± 0.02 eV with increasing oxygen deficiency, while the pre-factor was found to increase by a factor of 135. Here, a nearly 13-fold increase in ionic mobility at 60 °C for increases in oxygen non-stoichiometry from 0.032 ± 0.001 to 0.042± 0.001 was thereby detected. Raman spectroscopy was employed to rule out changes in strain as the primary cause for the significant change in mobility. Several factors potentially contributing to the large pre-factor changes are examined and discussed. Insights into how ionic defect concentration can markedly impact ionic mobility should help in elucidating the origins of variations seen in nanoionic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Adaptive Scalpel Scanning Probe Microscopy for Enhanced Volumetric Sensing in Tomographic Analysis

Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM). While advances have enabled volumetric probing of conductive features with nanometer accuracy in solid‐state devices, materials, and photovoltaics, limitations in spatial resolution and volumetric sensitivity persist. This work identifies and addresses in‐plane and vertical tip‐sample junction leakage as sources of parasitic contrast in tomographic AFM, hindering real‐space 3D reconstructions. Novel strategies are proposed to overcome these limitations. First, the contrast mechanisms analyzing nanosized conductive features are explored when confining current collection purely to in‐plane transport, thus allowing reconstruction with a reduction in the overestimation of the lateral dimensions. Furthermore, an adaptive tip‐sample biasing scheme is demonstrated for the mitigation of a class of artefacts induced by the high electric field inside the thin oxide when volumetrically reduced. This significantly enhances vertical sensitivity by approaching the intrinsic limits set by quantum tunneling processes, allowing detailed depth analysis in thin dielectrics. The effectiveness of these methods is showcased in tomographic reconstructions of conductive filaments in valence change memory, highlighting the potential for application in nanoelectronics devices and bulk materials and unlocking new limits for tomographic AFM.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The organic redox transistor for neuromorphic computing

Inspired by the in-memory computing architectures of biological systems, neuromorphic computing using crossbar arrays of artificial synapses based on non-volatile memory (NVM) devices with variable conductances has emerged as a new paradigm to enable massively parallel and ultra-low power computing hardware for data centric applications. Although inference has been demonstrated successfully using crossbars based on a variety of NMV technologies, efficient learning and scaling to large arrays (>10 6 elements) remains a challenge due to the synaptic elements' non-ideal electrical characteristics which degrades ANN accuracy. A further challenge is that in the conductive state memristors draw large currents >μA resulting in significant voltage drops in the interconnect wires and increased probability of failure in scaled arrays. We suggest the organic polymer redox transistor (RT) is an alternate approach that could solve many of these challenges, enabling both inference and parallel outer product updates, as recently demonstrated by Fuller et al. An RT consists of redox-active channel and gate electrodes in contact with a liquid or solid electrolyte. lon insertion through the electrolyte controls the channel electronic conductivity, while electron transfer through an external circuit maintains overall charge neutrality. Unlike a rechargeable battery, in the RT the voltage built-up across the electrolyte is kept to a minimum (typically <100 mV) by using the same material for the gate and channel. Elimination of the voltage offset simplifies integration of the RT into programmable arrays by enabling the use of various selectors. RTs based on inorganic and organic materials have been recently demonstrated with conductance tuning occurring at potentials of just a few mV and hundreds to thousands of linearly and symmetrically programmable conductance states, enabling near ideal accuracy in neural network simulations. Introduced in the 1980's, redox transistors with metallic gate electrodes and organic channel materials, also known as organic electrochemical transistors (OECTs), have been explored for a variety of applications such as chem- and bio-sensing, neural interfaces, and low cost printed circuits. A typical channel material for OECTs is the conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS). PEDOT is a p-type semiconducting polymer with mobile positively charged polarons that hop chain-to-chain.

Talin, Albert Alec↗
NASA NTRS1988

Development of a high-speed H-alpha camera system for the observation of rapid fluctuations in solar flares

A solid-state digital camera was developed for obtaining H alpha images of solar flares with 0.1 s time resolution. Beginning in the summer of 1988, this system will be operated in conjunction with SMM's hard X-ray burst spectrometer (HXRBS). Important electron time-of-flight effects that are crucial for determining the flare energy release processes should be detectable with these combined H alpha and hard X-ray observations. Charge-injection device (CID) cameras provide 128 x 128 pixel images simultaneously in the H alpha blue wing, line center, and red wing, or other wavelength of interest. The data recording system employs a microprocessor-controlled, electronic interface between each camera and a digital processor board that encodes the data into a serial bitstream for continuous recording by a standard video cassette recorder. Only a small fraction of the data will be permanently archived through utilization of a direct memory access interface onto a VAX-750 computer. In addition to correlations with hard X-ray data, observations from the high speed H alpha camera will also be correlated and optical and microwave data and data from future MAX 1991 campaigns. Whether the recorded optical flashes are simultaneous with X-ray peaks to within 0.1 s, are delayed by tenths of seconds or are even undetectable, the results will have implications on the validity of both thermal and nonthermal models of hard X-ray production.

Kiplinger, Alan L.↗
DOE OSTI2023

A Graph Dynamical neural network approach for decoding dynamical states in ferroelectrics.

Ferroelectric materials such as BaTiO 3 show tremendous potential for emerging advances in memory devices, particular neuromorphic type devices. High density of memory can be obtained by stabilising polar domain walls at the nanoscale, regions of discontinuity between the well-defined polarization order parameter, but little is known about what controls their structure and dynamics in real nanoscale materials. Indeed, chiral polar domain walls have been observed in heterogeneous ferroelectrics, such as oxygen-deficient BaTiO 3 , but very little is known about how such polar-domains walls interact with defects. Indeed, a critical understanding of how dynamics of domain-walls depend on point-defects is crucial to create engineered ferroelectric memory devices. For this work, we perform large-scale simulations of nansocale domain-wall dynamics in pristine and defective BaTiO 3 using reactive force-field developed by us earlier (Phys. Chem. Chem. Phys., 2019, 21, 18240–18249), and capture their dynamical dependence on point defects using a graph dynamical neural-network approach, which we adapted to interrogate solids with well-defined order-parameters, and implemented using Pytorch based libraries. Our machine learning (ML) approach goes beyond the traditional post-processing methods to capture both spatial and temporal heterogeneities of large-scale molecular dynamics simulations of complex defective ferroelectric oxide materials. We crucially find that isolated oxygen vacancies introduce very localized spatial regions (~1–2 unit-cell in length) that show slow dipole relaxation due to formation of defect-dipoles, and that these defect-dipoles in turn slow the intrinsic dynamics of domain walls. Further, the roughness of domain walls, also influenced by vacancies, introduce dynamic heterogeneity along the domain-wall. As such we find a novel mechanism by which quenched disorder due to defects introduce dynamic heterogeneity thereby influencing response to external fields (particularly time varying fields) in a ferroelectric. Our study also emphasizes the need for creating digital twins of dynamical quantities to achieve autonomous in operando control of nanoscale switching.

42 ENGINEERING↗
DOE OSTI2020

Active analog tuning of the phase of light in the visible regime by bismuth-based metamaterials

The active and analog tuning of the phase of light by metamaterials is needed to boost the switching performance of photonic devices. However, demonstrations of this type of tuning in the pivotal visible spectral region are still scarce. Herein, we report the active analog tuning of the phase of visible light reflected by a bismuth (Bi)-based metamaterial, enabled by a reversible solid-liquid transition. This metamaterial, fabricated by following a lithography-free approach, consists of twodimensional assemblies of polydisperse plasmonic Bi nanostructures embedded in a refractory and transparent aluminum oxide matrix. The analog tuning of the phase is achieved by the controlled heating of the metamaterial to melt a fraction of the nanostructures. A maximum tuning of 320° (1.8 π) is observed upon the complete melting of the nanostructures at 230°C. This tuning is reversible by cooling to 25°C. In addition, it presents a wide hysteretic character due to liquid Bi undercooling. This enables the phase achieved by this analog approach to remain stable over a broad temperature range upon cooling and until resolidification occurs around 100°C. Therefore, Bi-based metamaterials are endowed with analog optical memory capabilities, which are appealing for a wide range of applications, including optical data storage with enhanced information density or bistable photonic switching with a tunable “on” state.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Observation of single-defect memristor in an MoS2 atomic sheet

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide and hexagonal boron nitride sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS 2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Linking structural and rheological memory in disordered soft materials

Linking the macroscopic flow properties and nanoscopic structure is a fundamental challenge to understanding, predicting, and designing disordered soft materials. Under small stresses, these materials are soft solids, while larger loads can lead to yielding and the acquisition of plastic strain, which adds complexity to the task. In this work, we connect the transient structure and rheological memory of a colloidal gel under cyclic shearing across a range of amplitudes via a generalized memory function using rheo-X-ray photon correlation spectroscopy (rheo-XPCS). Our rheo-XPCS data show that the nanometer scale aggregate-level structure recorrelates whenever the change in recoverable strain over some interval is zero. The macroscopic recoverable strain is therefore a measure of the nano-scale structural memory. We further show that yielding in disordered colloidal materials is strongly heterogeneous and that memories of prior deformation can exist even after the material has been subjected to flow.

Kamani, Krutarth M. [Univ. of Illinois at Urbana-C↗
DOE OSTI2024

Monte Carlo Explicitly Correlated Second-Order Many-Body Green’s Function Calculations of Semiconductor Band Gaps

A systematically converging series of ab initio, post-density-functional, size-consistent, electron-correlated approximations is desired for predictive computing of felectronic band structures of insulating, semiconducting, and metallic solids. A series that meets all of these desiderata (except the applicability to metals) is ab initio many-body Green's function theory based on Gaussian-type-orbital (GTO) basis sets. Here, its leading-order approximation, the second-order Green's function (GF2) method in the diagonal and frequency-independent approximations with the aug-cc-pVDZ basis set, is applied to the fundamental band gaps of three semiconductors (diamond, silicon, and silicon carbide in the zincblende structure) using cluster models. Corrections are made to the basis-set-incompleteness errors by the explicit-correlation (F12) ansatz (GF2-F12) for the valence band edges. The crystals are modeled as surface-passivated clusters of increasing sizes, whose wave functions are expanded by up to 2709 GTO basis functions. Immense computational costs of these calculations are overcome by the highly scalable stochastic algorithm of the Monte Carlo GF2-F12 method, whose operation cost per state increases only as a cubic power of system size, which has a tiny memory footprint and easily achieves near-perfect parallel efficiency on thousands of CPUs or on hundreds of GPUs. The correlated, F12-corrected highest-occupied and lowest-unoccupied molecular-orbital energy (HOMO-LUMO) gap is 5.78 ± 0.07 eV for C 87 H 76 as compared with the experimental value of the fundamental (indirect) band gap of bulk diamond at 5.48 eV. The correlated, F12-corrected HOMO-LUMO gaps for Si 75 H 76 and Si 32 C 43 H 76 are 2.56 ± 0.15 eV and 3.50 ± 0.12 eV, respectively, which are expected to decrease further with increasing cluster sizes. As a result, the experimental fundamental (indirect) band gaps of bulk silicon and silicon carbide are 1.17 eV and 2.42 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Temperature-independent giant dielectric response in transitional BaTiO 3 thin films

Ferroelectric materials exhibit the largest dielectric permittivities and piezoelectric responses in nature, making them invaluable in applications from supercapacitors or sensors to actuators or electromechanical transducers. The origin of this behavior is their proximity to phase transitions. However, the largest possible responses are most often not utilized due to the impracticality of using temperature as a control parameter and to operate at phase transitions. This has motivated the design of solid solutions with morphotropic phase boundaries between different polar phases that are tuned by composition and that are weakly dependent on temperature. Thus far, the best piezoelectrics have been achieved in materials with intermediate (bridging or adaptive) phases. But so far, complex chemistry or an intricate microstructure has been required to achieve temperature-independent phase-transition boundaries. Here, we report such a temperature-independent bridging state in thin films of chemically simple BaTiO3. A coexistence among tetragonal, orthorhombic, and their bridging low-symmetry phases are shown to induce continuous vertical polarization rotation, which recreates a smear in-transition state and leads to a giant temperature-independent dielectric response. The current material contains a ferroelectric state that is distinct from those at morphotropic phase boundaries and cannot be considered as ferroelectric crystals. We believe that other materials can be engineered in a similar way to contain a ferroelectric state with gradual change of structure, forming a class of transitional ferroelectrics. Similar mechanisms could be utilized in other materials to design low-power ferroelectrics, piezoelectrics, dielectrics, or shape-memory alloys, as well as efficient electro- and magnetocalorics.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Giant enhancement of the magnetocaloric response in Ni–Co–Mn–Ti by rapid solidification

Magnetocaloric refrigeration is a solid-state cooling approach that assures high energy efficiency and low environmental impact. It remains uncompetitive with conventional vapor-compression technologies due to lack of high-performing materials that exhibit large magnetocaloric effects in low magnetic fields. In this work we report a game-changing enhancement of the magnetocaloric response in a transition-metal-based Ni–Co–Mn–Ti. Mechanically and chemically stable rapidly solidified ribbons exhibit magnetic entropy changes as high as ~27J·kg –1 K –1 for a moderate field change of 2T, comparable to or larger than the best known materials for near-room temperature applications. The ribbons can be easily manufactured in large quantities and the transition temperature can be adjusted by varying Co concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-Cooperativity Coupling of Rare-Earth Spins to a Planar Superconducting Resonator

The interfacing of a superconducting microwave resonator with rare-earth-doped crystals presents a promising hybrid quantum system for applications including spin-assisted transducers and memories. The coupling strength between the spins of the rare-earth ions and the microwave photons is characterized by the cooperativity. Here, we report an ultrahigh cooperativity of C~650 between rare-earth spins and a planar superconducting microwave resonator that features a highly uniform magnetic field for harnessing the strong anisotropic coupling strength of erbium-doped yttrium orthosilicate. This cooperativity rivals that from a bulk dielectric resonator and may pave a path for efficient coupling of spins with microwave photons on an integrated platform.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Period proliferation in periodic states in cyclically sheared jammed solids

Athermal disordered systems can display a remarkable response to an applied oscillatory shear: After a relatively few shearing cycles, the system falls into a configuration that had already been visited in a previous cycle. After this point the system repeats its dynamics periodically despite undergoing many particle rearrangements during each cycle. We study here the behavior of orbits as we approach the jamming point in simulations of jammed particles subject to oscillatory shear at fixed pressure and zero temperature. As the pressure is lowered, we find that it becomes more common for the system to find periodic states where it takes multiple cycles before returning to a previously visited state. Thus, there is a proliferation of longer periods as the jamming point is approached.

36 MATERIALS SCIENCE↗