Search NASA⌕ Search

SEARCH · Search NASA

Results for “Substrate effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Vertical-structure effects on planetary microwave brightness temperature measurements - Applications to the lunar regolith

An attempt to constrain the effects of vertical variations in dielectric properties on lunar microwave observations is presented. A numerical approach for deriving the reflectivity and microwave weighting function of a vertically varying half-space is used, assuming variance in the dielectric properties with depth only, and negligible magnetic effects. The cases of continuous and stratified models of vertical structures are discussed, and a concentration of emitted energy in upper layers is found. The total emitted energy oscillates, varying with the thickness of the upper soil layer, but averaging out interference effects due to random variations in the substrate depth. Consideration is also given to the vertical structure effects on the lunation-mean disk-center brightness temperature, its variations, and the regolith electrical loss, and predicted reflectivity effects by feasible models of the lunar regolith dielectric profile.

Keihm, S. J.↗
NASA NTRS2004

High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

Si/Ge/Si n-type modulation doped field effect structures and transistors (n-MODFET's) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm(exp 2)/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rm's roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 micron gate lengths and 200 micron gate widths were fabricated and tested.

Mueller, Carl↗
NASA NTRSDate not supplied

Oculometric Analysis of Saccadic Compensation for Visual Motion Processing Impairment due to Alcohol and Sleep Disruption

The Visuomotor Control Laboratory at Ames Research Center has developed a 5-minute ocular tracking test that computes 21 largely independent metrics of visuomotor performance, reflecting neural signal processing along a number of distinct pathways through cortex, brainstem, and cerebellum. Human sensorimotor performance is resilient to the challenges and stressors of many operational environments, in part, because overall performance is achieved through multiple parallel systems. Our multidimensional oculometrics allow us to examine impacts on these sub-components separately. To illustrate this, we contrasted the effects of two mild neural stressors, acute sleep-deprivation and low-dose alcohol. We have previously shown that, in both cases, oculometric analysis is a highly sensitive indicator of impairment. Here we quantified not only the observed impact on the performance of one sub-system, smooth pursuit, which uses high-level cortical processing of visual motion to track a moving object, but also the observed (partial) compensation by an evolutionarily older mid-brain and brainstem subsystem, saccades, which generates jumps in eye position to catch up with the target when smooth pursuit is inadequate. Specifically, we examined the dose-response (effect size vs. dose size) of the ground lost (pursuit deficit) and the ground recouped (saccadic compensation) across three separate studies – acute low-dose alcohol administration (16 subjects), acute sleep loss (12 subjects), and acute sleep loss with caffeine intervention (9 subjects). We computed the dose-response slopes using linear regression. The figure below shows that, in the case of acute sleep deprivation, the resulting slopes for ground lost and ground recouped (mean ± SE across subjects) were significantly different (paired t-test, t(11) = 5.17, p < 0.001), indicating poor saccadic compensation. However, when sleep loss was coupled with caffeine ingestion, ground lost was decreased and ground recouped increased such that the slopes were no longer different (t(8) = -0.05, p = 0.965). With alcohol, the two slopes were large albeit not significantly different (t(15) = 0.96, p = 0.351), indicating significant pursuit impairment but effective saccadic compensation. Our findings show that sleep deprivation and alcohol affect oculomotor performance differently. Low-dose alcohol effects appear predominantly cortical, with effective brainstem compensation. Sleep loss and circadian disruption however appears to affect both cortical and brainstem pathways with caffeine providing an effective countermeasure to both effects. Beyond the mere detection of impairment, our oculometric assessment allows us to characterize the nature of the deficit, to provide insight into the neural substrate, and to assess the effectiveness of countermeasures.

pursuit↗
NASA NTRS2001

Wetting Angle and Surface Tension of Germanium Melts on Different Substrate Materials

The sessile drop technique has been used to measure the wetting angle and the surface tension of molten germanium (Ge) on various substrate materials. Sapphire, fused silica, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AlN, Si3N4, and CVD diamond were used as substrate materials. In addition, the effects of different cleaning procedures and surface treatments on the wetting behavior were investigated. The highest wetting angles with values around 170 deg. were found for pBN substrates under active vacuum or with a slight overpressure of 5N Argon or forming gas (2% Hydrogen in 5N Argon). The measurement of the surface tension and its temperature dependence for Ge under a forming gas atmosphere resulted in gamma(T) = 591 - 0.077 (T-T(sub m).

Kaiser, N.↗
NASA NTRS1989

Effect of braiding process on the damage tolerance of 3-D braided graphite/epoxy composites

One of the key advantages of three-dimensional braided composite materials is their high impact damage tolerance comparing with laminated composites, due to their fully integrated fibrous substrates. In this paper, the effect of different processing methods on the impact damage tolerance of braided graphite/epoxy composite is experimentally assessed. The test specimens are prepared using both of the two existing three-dimensional braiding techniques (the 4-step and the 2-step processes). After the specimens are impacted under controlled impact energy, the damage introduced is studied. Then a compression test is conducted to evaluate the compression strength of the specimens after impact.

El-Shiekh, Aly↗
NASA NTRS1974

Additional development of large diameter carbon monofilament

The chemical vapor process for preparing a large diameter carbon-base monofilament from a BCl3, Ch4 and H2 gas mixture with a carbon substrate fiber was studied. The effect of reactor geometry, total gas flows and deposition temperature on the tensile strength of the monofilament were investigated. It was noted that consistent results could only be obtained when the carbon substrate fiber was cleaned. The strength of the monofilament was found to depend on the highest temperature and the temperature profile of the monofilament in the reactor. The strength of monofilament produced in the dc and RF reactors were found to be similar and similar alloy compositions in the monofilament were attained when the same gas ratios were used. The tensile strength of the monofilament at 500 C was found to be 60 to 70% of the room temperature tensile strength. No degradation was noted after exposure to molten aluminum.

Jacob, B. A.↗
NASA NTRS1994

Temperature Dependent Performance of Coplanar Waveguide (CPW) on Substrates of Various Materials

The attenuation (a) and effective dielectric constant (E(sub eff)) of Coplanar Waveguide (CPW) transmission lines on high-resistivity silicon and diamond substrates as a function of both temperature and frequency are presented. The technique used to obtain the values for a and E(sub eff) involves the use of a unique cryogenic probe station designed and built by NASA. Attenuation of gold CPW lines on diamond substrates is compared with that of superconducting CPW lines.

Taub, Susan R.↗
NASA NTRS1990

Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates

The properties of heteroepitaxial InP cells were determined both before and after 10-MeV proton irradiations. Numerical values, obtained for the diffusion and recombination components of the reverse saturation currents, were found to be consistent with the distribution of dislocations. The radiation resistance of the heteroepitaxial cells was significantly greater than that observed for n/p homoepitaxial InP cells. The carrier removal rate, obtained by C-V measurements, was 1800/cm for 10-MeV protons compared with 2.2/cm for 1-MeV electrons. The high carrier removal rate was found to have no significant effect on the cell's series resistance. It was concluded that the heteroepitaxial cell performance is dominated by the high dislocation density attributable to lattice constant mismatch. Although the efficiencies of the present cells are low, the recent achievement of 13.7 percent AM0 efficiencies using a GaAs substrate demonstrates the marked improvement that can be attained using more appropriate transition layers.

Weinberg, I.↗
NASA NTRS1979

Investigation into the effect of plasma pretreatment on the adhesion of parylene to various substrates

A procedure is described for using argon and oxygen plasmas to promote adhesion of parylene coatings upon many difficult-to-bond substrates. Substrates investigated were gold, nickel, kovar, teflon (FEP), kapton, silicon, tantalum, titanium, and tungsten. Without plasma treatment, 180 deg peel tests yield a few g/cm (oz/in) strengths. With dc plasma treatment in the deposition chamber, followed by coating, peel strengths are increased by one to two orders of magnitude.

Riley, T.↗
NASA NTRS1980

Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

Ownby, D. P.↗
NASA NTRS2007

Gratings and Random Reflectors for Near-Infrared PIN Diodes

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.

Gunapala, Sarath↗
NASA NTRS1978

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area sheet task of the low-cost solar array project

A new calculation of the effects of thermal stresses during growth on silicon ribbon quality is reported. Thermal stress distributions are computed for ribbon growth under a variety of temperature profiles. A growth rate of 55 cu cm/min with a single ribbon was achieved. The growth of RTR ribbon with a fairly uniform parallel dendritic structure was demonstrated. Results with two approaches were obtained for reducing the Mo impurity level in polycrystalline feedstock. Coating the Mo substrate with Si3N4 does not effect thermal shear separation of the polyribbon; this process shows promise of improving cell efficiency and also increasing the useful life of the molybdenum substrate. A number of solar cells were fabricated on RTR silicon grown from CVD feedstock.

Baghdadi, A.↗
NASA NTRS1981

Thermal and stress analysis of thermal barrier coatings

An analysis has been performed that predicts the thermomechanical behavior of thermal barrier coated specimens. The analysis predicts the behavior during both plasma spray coating application and burner rig testing conditions simulating engine operation. The analysis was accomplished through utilization of one-dimensional through thickness and two-dimensional finite element calculations. The results of these calculations showed that specimens with a substrate control temperature between 300 F and 600 F would be optimum. Controlling substrate temperature was found to have a more dominant effect on the mechanical strains than the ceramic or substrate thicknesses. The predicted stresses and mechanical strains at the bond-coating interface are large enough to cause cracks in this region where post-test observations have determined coating failures originate.

Cassenti, B. N.↗
NASA NTRS2003

High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire Substrates

For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 square centimeters N-sec at an electron carrier density (n(sub e) = 1.33x10(exp 12) per square centimeter)) of 1.6 x 10(exp 12) per square centimeter was obtained. At 250 mK, the mobility increases to 13,313 square centimeters/V-sec (n(sub e)=1.33x10(exp 12) per square centimeter)) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.

Mueller, Carl H.↗
NASA NTRS1986

Oxidation of commercial purity titanium

The oxidation kinetics of commercial purity Ti-A55 exposed to laboratory air in the 593-760 C temperature range were continuously monitored by thermogravimetric analysis. The oxide thickness was measured by microscopy, and the substrate contamination was estimated from microhardness measurements. The microhardness depth profiles were converted to oxygen composition profiles using calibration depth. The oxygen diffusion coefficient in alpha-Ti appears to be approximately concentration-independent in the 1-10 at. pct oxygen range. Diffusion coefficient for oxygen in TiO2 has been estimated as a function of temperature and is found to be about 50 times the value in alpha-Ti. The metallographically prepared cross sections of the oxidized specimens revealed a 'moving boundary' in the substrate, parallel to the oxide-metal interface. This boundary was associated with a specific oxygen level of 5.0 + or - 0.5 at. pct. It occurred at a distance from the oxide-metal interface which was correlatable with temperature and time of exposure. The diffusion coefficient corresponding to the composition of this moving boundary is in excellent agreement with the effective diffusion coefficient for the substrate contamination.

Unnam, J.↗
NASA NTRS2016

Graphene Field Effect Transistor for Radiation Detection

The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

Li, Mary J.↗
NASA NTRS1978

Friction and wear of several compressor gas-path seal movements

Rub interaction experiments were conducted on a series of sintered and plasma sprayed compressor gas path seal materials in contact with Ti-6Al-4V blade tip and knife edge rotors. The most rub tolerant materials investigated were sintered Nichrome and plasma sprayed nickel 25 percent graphite. The effectiveness of providing a compliant substrate for dense seal material coatings was also demonstrated. In general, it was observed that rotor wear and high frictional energy generation rates accompanied smearing or surface densification of the materials investigated. The onset of smearing was sensitive to rub interaction parameters and seal geometry. Two complementary models were proposed to account for the smearing trends. One is based on thermal effects, the other on particulate escape effects. They were shown to be consistent with the experimental evidence at hand, and together they predict that smearing, with the onset of high energy rub conditions, is favored when incursion rates (radial motion) are low, incursion depths are high, the seal geometry is of a knife-edge character, and the seal particle size is small.

Bill, R. C.↗
NASA NTRS2001

Contact Angles and Surface Tension of Germanium-Silicon Melts

Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.

Croell, A.↗