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At least 199 records · Page 11

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DOE OSTI2026

Experimental considerations and applications for time-resolved impedance on silicon-anode battery systems

Dynamic electrochemical impedance spectroscopy (dEIS) utilizes a superimposed multi-sinusoidal waveform and enables temporally resolved investigations on various electrochemical processes; however, the signal-to-noise ratio must be maximized while retaining linearity and stationarity within the system. In the present work, we probe the impact of the waveform’s total amplitude as well as the waveform and phase profiles. The equal amplitude multi-sinusoidal waveform with 35 mV total amplitude (<1 mV per frequency) and random phase profile exhibits the lowest impedance noise. This input signal is sufficient in avoiding the high frequency signal attenuation from the potentiostat’s low-pass filter. Additionally, we demonstrate the optimized dEIS waveform’s utility in investigating surface passivation within thin-film and composite silicon (Si) anodes. Within a two-electrode Si-lithium metal coin cell, the charge transfer resistance (RCT) associated with alloying kinetics dominates the overall impedance. RCT increases with state of charge indicating a kinetic bottleneck at higher lithiation states. To explore this further, we utilize a three-electrode Si-LiNi0.8Mn0.1Co0.1O2 pouch cell to deconvolute the Si impedance contributions. The evolution of the solid electrolyte interphase (SEI) and charge transfer resistances correlate to specific Li–Si alloy phases. We attribute this to the influence of Si particle volume expansion on SEI instabilities and a kinetic bottleneck at higher lithiation states.

Lam, Steven [ORNL]↗

DOE OSTI2022

Image-domain DAS 3D VSP elastic transmission tomography

SUMMARY Full-wavefield elastic imaging of active-source seismic data acquired by downhole receivers commonly offers higher-resolution subsurface images in the vicinity of a borehole compared to conventional surface seismic data sets, which can lack higher-frequency wavefield components due to longer travel paths and increased attenuation. An increasingly used approach for downhole acquisition is vertical seismic profiling (VSP), which has become more attractive when coupled with distributed acoustic sensing (DAS) using optical fibres installed in wells. The main difficulty for generating high-quality images with full-wavefield imaging tools for DAS VSP data, though, is the need for an accurate velocity model. To build plausible velocity models using active-source DAS VSP data, we adopt a 3-D image-domain elastic transmission tomography technique, originally developed for surface-recorded passive (microseismic) data, by exchanging the source and receiver positions (i.e. reciprocity) to mimic a passive-seismic surface monitoring scenario. The inversion approach exploits various images for each source constructed through time-reverse imaging (TRI) of downgoing P- and S-wave first-arrival waveforms. The TRI process uses the kinetic term of the (extended) PS energy imaging condition that exhibits sufficient sensitivity to velocity model errors. The method automatically updates the P- and S-wave velocity models to optimize image focusing via adjoint-state inversion. We illustrate the efficacy of the adopted elastic inversion technique using an active-source DAS 3-D VSP field data set acquired in the North Slope of Alaska. The numerical experiments demonstrate that the inverted elastic velocity models can be further used in full-wavefield acoustic/elastic imaging algorithms to obtain accurate subsurface images.

Oren, Can (ORCID:000000019534265X)↗

DOE OSTI2022

Nanostructured $\mathrm{GaAs/(Al,Ga)As}$ Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum

Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror reflectivity of monolithic microcavities. In this work we use a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance to achieve state-of-the-art polariton condensation threshold in a GaAs/(Al,Ga)As waveguide. Most important, we show the influence of fabrication control and how surface passivation via atomic layer deposition provides a way to reduce exciton quenching at the grating sidewalls.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2025

Structural inversion asymmetry in epitaxial ultrathin films of Bi(111)/InSb(111)B

Bismuth (Bi) films hold potential for spintronic devices due to strong spin-orbit coupling. Understanding the growth, surface states, and interactions with the substrate is key to their functionalization. Large-area high-quality (111) Bi ultrathin films were grown on InSb (111)B substrates by molecular beam epitaxy (MBE). Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to nonequivalent interface potentials. Analysis of angle-resolved photoemission spectroscopy (ARPES) measurements, employed to characterize the evolution of the surface states with film thickness, indicate a crossing at the $\overline{M}$ point, suggesting a topologically trivial phase in the thin film. In conclusion, the results show the presence of interfacial bonds to the substrate breaks inversion symmetry, preventing the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation of two-dimensional materials.

Inbar, Hadass S. [Univ. of California, Santa Barba↗

DOE OSTI2021

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Time-resolved photoluminescence (TRPL) with two excitation wavelengths – 670 (standard) and 405 nm – was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the use of Mg y Zn 1-y O buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for Mg y Zn 1-y O/CdSe x Te 1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSe x Te 1-x films grown on Al 2 O 3 , which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

cadmium telluride↗

DOE OSTI2021

Relationship of Chemical Composition and Moisture Sensitivity in LiNi x Mn y Co 1-x-y O 2 for Lithium-Ion Batteries

Chemical composition–moisture sensitivity relationship of LiNi x Mn y Co 1-x-y O 2 (NMC) cathode materials was investigated by exploring crystal structures, surface properties, and electrochemical performance behaviors of various commercial NMC powders: LiNi 1/3 Mn 1/3 Co 1/3 O 2 (NMC111), LiNi 0.5 Mn 0.3 Co 0.2 O 2 (NMC532), LiNi 0.6 Mn 0.2 Co 0.2 O 2 (NMC622), and LiNi 0.8 Mn 0.1 Co 0.1 O 2 (NMC811). The NMC powders were stored in different moisture conditions: moisture-free, humidified air, or immersed in water. Rietveld refinement analysis of X-ray diffraction (XRD) data and scanning electron microscopy (SEM) were used to characterize the crystal structure changes and the evolution of particle surfaces morphologies. The effect of moisture contamination on the electrochemical properties of NMC cathodes was studied by galvanostatic cycling and electrochemical impedance spectroscopy (EIS). The moisture contamination resulted in either structural disorder or unwanted surficial deposition products, which increased a charge-transfer impedance and consequent performance degradation of battery cells. The results showed that NMC’s moisture vulnerability increased with Ni content (x) despite protective coatings on commercial particles, which stressed the necessity of alternative surface passivation strategies of Ni-rich NMC for broad applications such as electric vehicles and electrified aircraft propulsion.

25 ENERGY STORAGE↗

DOE OSTI2020

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 10 9 and 6 × 10 3 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Atomically precise digital e-beam lithography

Hydrogen Depassivation Lithography (HDL) is a version of electron beam lithography that uses scanning tunneling microscope (STM) instrumentation to expose a self–developing resist that is a monolayer of H chemisorbed to a Si (100) 2x1 H-passivated surface. Developed in the 1990s it has been largely a laboratory tool used in research for nanofabrication. Here, the technique is capable of atomic resolution, the ability to remove single H atoms from the Si surface and has much higher precision than the best conventional e-beam lithography can possibly achieve exposing polymeric resists. However, its most promising attribute is that it can be used as a digital fabrication tool and is the first of a class of nanofabrication techniques that can be considered digital atomic scale fabrication technologies. Digital Atomic Scale Fabrication can be shown to have similar advantages over analog fabrication techniques that digital information technology has over analog information technology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2019

A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics

Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent research has focused on fabricating contacts that limit Fermi-level pinning at the metal-semiconductor interface. Here, we develop a new, simple procedure for transferring metal contacts that does not require aligned lithography. Using this technique, we fabricate vertical Schottky-junction WS 2 solar cells, with Ag and Au as asymmetric work function contacts. Under laser illumination, we observe rectifying behavior and open-circuit voltage above 500 mV in devices with transferred contacts, in contrast to resistive behavior and open-circuit voltage below 15 mV in devices with evaporated contacts. One-sun measurements and device simulation results indicate that this metal transfer process could enable high specific power vertical Schottky-junction transition metal dichalcogenide photovoltaics, and we anticipate that this technique will lead to advances for two-dimensional devices more broadly.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells

We report the profiling of spatial and energetic distributions of trap states in metal halide perovskite single-crystalline and polycrystalline solar cells. The trap densities in single crystals varied by five orders of magnitude, with a lowest value of 2 × 10 11 per cubic centimeter and most of the deep traps located at crystal surfaces. The charge trap densities of all depths of the interfaces of the polycrystalline films were one to two orders of magnitude greater than that of the film interior, and the trap density at the film interior was still two to three orders of magnitude greater than that in high-quality single crystals. Suprisingly, after surface passivation, most deep traps were detected near the interface of perovskites and hole transport layers, where a large density of nanocrystals were embedded, limiting the efficiency of solar cells.

14 SOLAR ENERGY↗

DOE OSTI2020

Plasma Processing of SRF Cavities for the Next Generation of Particle Accelerators

What are the major goals of the project? Goal 1: Optimize interactively processing of the single-cell cavity by combining plasma treatment and vertical cold bath testing. Continue using single cell cavity as the test bed for new applications. Goal 2: Work on upgrading the plasma etching technology for multi-cell SRF cavities. Goal 3: Develop and adapt discharge configurations to critical cavity regions including the electron beam weld (EBW) and iris areas. Goal 4: Develop tailored methods to prepare surface properties for a specific function prior to any additional modification, such as (but not limited to) surface passivation in preparation of other superconducting materials and structures.

43 PARTICLE ACCELERATORS↗

DOE OSTI2019

Revealing the Mechanism of Light-Induced Degradation and Regeneration of p-type Cz-Si

The goal of this SIPS project was to develop advanced spectroscopic tools to explore boron- oxygen related defects in p-type Czochralski (Cz) monocrystalline Si (c-Si) to inform processing strategies to permanently suppress these defects and improve cell efficiency. Our work can be divided into three categories: (a) establishment of surface passivation and fast-firing protocols for light induced degradation (LID) and regeneration in p-Cz Si; (b) sample preparation and identification of spectral features for LID and hydrogen in c-Si with vibrational and electron spin resonance (ESR) spectroscopies; (c) demonstration of the interrelation between high-temperature thermal annealing, which breaks nuclei for oxygen precipitates in LID and regeneration. To our knowledge, this is the first study that has identified LID defects using ESR. The magnetic properties of the LID defects will be invaluable in validating the structure of the LID defects through atomistic simulations. The results generated from this project were disseminated through conference presentations and proceedings, and a peer reviewed publication. The tools developed in this project will be used to study other forms of degradation in c-Si including light and elevated-temperature induced degradation in p-type Cz Si and process induced degradation in n-type Cz Si.

14 SOLAR ENERGY↗

DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗

DOE OSTI2022

Predicting and Controlling Corrosion (Abbreviated Final Report)

Corrosion accumulates significant replacement costs in the transportation, utility, manufacturing, and infrastructure sectors. It also underpins several of LLNL’s core missions in stockpile stewardship, defense, and energy security. Whereas most corrosion and aging models are empirically parameterized to describe well-defined conditions late in the reaction, the factors that determine the early stages of corrosion—during which mitigation could be most impactful— are poorly understood. This project addressed the critical need for new approaches to predict the kinetics of corrosion initiation based on firm physical and chemical understanding. The activities encompassed degradation of relevant metals in both hydrogen-rich and environmental corrosion scenarios. The team integrated state-of-the-art multiscale simulation, in situ characterization, and data science within three technical thrusts: hydriding of Ti alloys; aqueous corrosion of Al and Ni-Cr alloys; and degradation of additively manufactured 316L stainless steel. In each case, novel capabilities were developed to identify and track the impacts of key atomistic, compositional, and microstructural features on the metal systems. For hydriding, protocols were developed to tightly integrate multiscale models, advanced multimodal characterization, and machine learning to determine how hydrogen interacts with native passivating surface oxides and nucleates new undesired phases, shedding new light on the critical role of grain boundaries, interfaces, and atomically disordered regions. For aqueous corrosion, the project demonstrated methods to predict dissolution rates of metal surfaces in corrosive solutions, to measure and understand microstructural and grain orientation effects on corrosion susceptibility, and to investigate competing growth and dissolution kinetics of surface oxides. For additively manufactured metals, analysis using state-of-the-art microscopy techniques revealed the role of specific heterogeneities invoked during laser processing, including cellular structure, dislocations, and precipitates, on corrosion susceptibility. In addition to new capabilities and understanding, the project provided an avenue for workforce development, as well as key partnerships with stakeholders in corrosion science.

08 HYDROGEN↗

DOE OSTI2024

Diagnosing and overcoming recombination and resistive losses in non-silicon solar cells using a silicon-inspired characterization platform

This project aimed to generate the characterization tools needed for accurate and systematic loss analysis in non-silicon photovoltaic solar cell technologies and, through the use of these tools and analysis techniques, contribute to the development of a novel class of hetero-contacts to II-VI absorbers, with the final goal of demonstrating record-breaking CdSeTe devices. CdSeTe solar cells provide a prime example of the potential impact of the techniques we proposed to develop and implement: record poly-CdSeTe cells have bandgap-voltage deficits (W oc ) of approximately 550 mV, as compared with below 400 mV for all other mature PV technologies. Similarly, these record CdSeTe devices have FFs below 80%, when other mature cells are near or above 85%. Frustratingly, a systematic identification of the origin of these sub-par performances—for example recombination or resistive losses—has been lacking, thus slowing down the development of these technologies. Similarly, it is often asserted that CdSeTe cells need a better back (hole) contact. Although most believe this is true, no one knew—at the start of this project—how high the V oc and FF could be for a given cell if it had a perfect back contact. Such characterization techniques and loss analysis methods exist and are routinely performed on c-Si solar cells (e.g. injection-dependent lifetime, Suns-V oc , transfer length method, etc). Over the years, they have been instrumental in the development of silicon devices that operate at 91% of their theoretical (Auger) limit. Lifetime testing, and the associated reconstruction of the implied-J-V curve, can moreover be performed at every cell-processing step, thus allowing a direct peek into the impact of that step on cell performance. Therefore, adapting these techniques and tools to non-Si devices would greatly improve their learning rate. In this project, we developed a Suns-ERE technique—the equipment, methodology, and know-how—to measure the implied-J-V curve, the pseudo-J-V curve, and the actual J-V curve of a thin-film solar cell, allowing an accurate assessment of the quality of the bulk material and its surface passivation, the selectivity of the contact, and its resistivity. We used this technique to show that the absorber of present CdSeTe solar cells is capable of achieving 1 V Voc,, that passivation layers exist (e.g., Al2O3) that can support such high voltages, and that the barrier is identifying contact layers that are both passivating and carrier-selective. The characterization platform created in this project and the understanding generated using it will accelerate the progress of non-silicon PV technologies. In particular, the project will contribute to CdSeTe solar cells with Voc > 1 V and cell efficiency > 24%. Such cells provide a pathway to module-level efficiencies >23%. As CdSeTe presently competes with silicon on module cost (in $\$ $/W) and yet has significantly more room for efficiency gains, the potential for LCOE reduction is particularly large. For example, CdTe modules with an efficiency of 21% would allow an LCOE below $\$ $0.04kWh -1 in average US climates.

14 SOLAR ENERGY↗

DOE OSTI2026

Screen-Printed SHJ Solar Cells with Complex Silver Inks

Metallization using complex metal inks has gained significant research interest due to its cost-effectiveness and ability to achieve performance comparable to traditional nanoparticle pastes. This study introduces the use of complex silver (Ag) inks applied via industrial screen-printing for silicon heterojunction (SHJ) solar cell metallization. The printed Ag lines exhibit a contact resistivity on SHJ tin-doped indium oxide (ITO) surfaces as low as approximately 0.2-12 mO cm2. Photoluminescence imaging reveals minimal surface passivation degradation (iVoc < 3.5 mV), while scanning electron microscopy (SEM) shows a denser structure compared to Ag layer from nanoparticle pastes. The printed Ag grid features thin (approximately 1 micrometer), continuous fingers approximately 100-120 micrometer wide, significantly thinner than conventional approximately 20-30 micrometer fingers produced with nanoparticle-based pastes. Double printing achieves SHJ device efficiencies exceeding 20%, the highest reported for industrial solar cell precursors using this technology. These findings highlight the potential of complex Ag inks as a sustainable alternative to particle-based pastes, reducing Ag consumption and processing temperatures without compromising efficiency.

14 SOLAR ENERGY↗

DOE OSTI2021

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO: Preprint

cadmium telluride↗

DOE OSTI2021

Microwave diagnostics and passive sensors for pipeline, well-bore, and boiler-tube monitoring

Materials, methods of making, and methods of using an integrated wireless detector for real time interrogating metallic tubular structures comprising: an RF patch antenna; a passive surface acoustic wave (SAW) sensor; and data analytic methodologies. An embodiment relates to interrogating a metallic structure having a uniform cross section using an antenna which launches electromagnetic radiation. A sensor may be located within the structure is configured to re-emit electromagnetic radiation modified depending on parameters for which the sensor has been functionalized. An antenna may receive radiation as modified by the sensor, or may receive the transmitted or backscattered radiation directly, without use of a sensor. The antenna then communicates wirelessly with an interrogator providing data which may be used to understand the operational status of the structure in real-time.

Ohodnicki, Paul R.↗