Fluid phase analyzer Patent
Mixed liquid and vapor phase analyzer design with thermocouples for relative heat transfer measurement
Hays, L. G.↗
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The Exploration Water Recovery System
The Exploration Water Recovery System is designed towards fulfillment of NASA s Vision for Space Exploration, which will require elevation of existing technologies to higher levels of optimization. This new system, designed for application to the Exploration infrastructure, presents a novel combination of proven air and water purification technologies. The integration of unit operations is modified from that of the current state-of-the-art water recovery system so as to optimize treatment of the various waste water streams, contaminant loads, and flow rates. Optimization is achieved primarily through the removal of volatile organic contaminants from the vapor phase prior to their absorption into the liquid phase. In the current state-of-the-art system, the water vapor in the cabin atmosphere is condensed, and the volatile organic contaminants present in that atmosphere are absorbed into the aqueous phase. Removal of contaminants the5 occurs via catalytic oxidation in the liquid phase. Oxidation kinetics, however, dictate that removal of volatile organic contaminants from the vapor phase can inherently be more efficient than their removal from the aqueous phase. Taking advantage of this efficiency reduces the complexity of the water recovery system. This reduction in system complexity is accompanied by reductions in the weight, volume, power, and resupply requirements of the system. Vapor compression distillation technology is used to treat the urine, condensate, and hygiene waste streams. This contributes to the reduction in resupply, as incorporation of vapor compression distillation technology at this point in the process reduces reliance on the expendable ion exchange and adsorption media used in the current state-of-the-art water recovery system. Other proven technologies that are incorporated into the Exploration Water Recovery System include the Trace Contaminant Control System and the Volatile Removal Assembly.
ORourke, Mary Jane E.↗
An intercomparison of measurement systems for vapor and particulate phase concentrations of formic and acetic acids
During June 1986, eight systems for measuring vapor phase and four for measuring particulate phase concentrations of formic acid (HCOOH) and acetic acid (CH3COOH) were intercompared in central Virginia. HCOOH and CH3COOH vapors were sampled by condensate, mist, Chromosorb 103 GC resin, NaOH-coated annular denuders, NaOH-impregnated quartz filters, K2CO3 and NaCO3-impregnated cellulose filters, and Nylasorb membranes. Atmospheric aerosol was collected on Teflon and Nuclepore filters using both hi-vol and lo-vol systems to measure particulate phase concentrations. Performances of the mist chamber and K2CO3-impregnated filter techniques were evaluated using zero air and ambient air spiked with HCOOH(g) and CH3COOH(g), and formaldehyde from permeation sources. The advantages and drawbacks of these methods are reported and discussed.
Keene, William C.↗
Defect characterization in ZnGeP2 by time-resolved photoluminescence
The native defect-related optical properties of ZnGeP2 are studied by steady-state and time-resolved photoluminescence. ZnGeP2 crystals grown from the vapor phase by high pressure physical vapor transport (HPVT) and from the melt by gradient freezing (GF) show a broad infrared emission with peak position at 1.2 eV with a decay time constant of a few micro-s and a faster recombination center peaked at 1.68 eV. The decay transient for the emission at 1.2 eV exhibits features of classical donor-acceptor recombination and is linked to close-pairs that are tentatively associated with germanium-on-zinc antisite donors and zinc vacancy acceptors. Higher energetic luminescence structures at 1.6eV and 1.7eV are revealed after annealing of the ZnGeP2 crystals and are associated with the formation zinc and phosphorous vacancies in the near surface region. ZnGeP2 crystals grown by HPVT from zinc and phosphorus supersaturated vapor compositions show additional emission structure at 1.8 eV and a sharp donor-acceptor emission at 1.778 eV that is related to the presence of additional donor states.
Dietz, N.↗
Native Defect Related Optical Properties of ZnGeP2
We present photoluminescence, photoconductivity, and optical absorption spectra for ZnGeP2 crystals grown from the melt by gradient freezing and from the vapor phase by high pressure physical vapor transport (HPVT). A model of donor and acceptor related subbands in the energy gap of ZnGeP2 is introduced that explains the experimental results. The emission with peak position at 1.2 eV is attributed to residual disorder on the cation sublattice. The lower absorption upon annealing is interpreted in terms of both the reduction of the disorder on the cation sublattice and changes in the Fermi level position. The n-type conductivity of ZnGeP2 Crystals grown under Ge-deficient conditions by the HPVT is related to the presence of additional donor states.
Dietz, N.↗
Room temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 mu m based on (001) InP substrate
Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy.
quantum↗
An improved method for Apollo propulsion system decontamination.
Vapor phase decontamination for removing residual hypergolic propellants in Apollo propulsion system
DECONTAMINATION↗
Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport
The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).
Su, Ching-Hua↗
Atmospheric measurements of pyruvic and formic acid
Pyruvic acid, a product of the atmospheric oxidation of cresols and probably of isoprene, has been determined together with formic acid in atmospheric aerosols and rain as well as in the vapor phase. Both acids are present predominantly as vapor; only about 10-20 percent of the total atmospheric pyruvate and 1-2 percent of the total formate are in the particulate phase. The concentrations of pyruvic and formic acid are highly correlated, with typical formic-to-pyruvic ratios of 10-30 in the gas phase, 20-30 in rain, and 2-10 in aerosols. The gas-phase and rain ratios are comparable to those predicted to result from isoprene oxidation. Pyruvic acid levels were similar in the eastern United States (during summer) and the Amazon Basin, suggesting that natural processes, particularly the photochemical oxidation of isoprene, could account for most of the pyruvic acid present in the atmosphere.
Andreae, Meinrat O.↗
Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings
In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (< 10 microns) single layers to be deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers
Harder, Bryan J.↗
Sensitivity of magnetohydrodynamic simulations of Joule-heated conductors to the vaporization curve in equations of state
Magnetohydrodynamic (MHD) simulations of electrically exploded aluminum and copper rods demonstrate a technique to validate equations of state (EOS) for rapidly Joule-heated conductors. The balance of internal and magnetic forces at the conductor-insulator interface drives the metal there along the vaporization phase boundary. Variations between critical points and vaporization curves in existing models predict differing densities and temperatures in MHD simulations for these models. Here, the inclusion of Maxwell constructs in the liquid-vapor biphase region of the EOS caused the rod surface to vaporize earlier in time than unmodified tables with van der Waals loops. Velocimetry of recent experiments is used to validate the location of the vaporization curve in existing EOS models and differentiate between the vapor dome treatments. Dielectric coatings applied to the metal surface restricted the conductor’s expansion and diverted the metal into the warm dense matter regime.
36 MATERIALS SCIENCE↗
Experiments on the properties of superfluid helium in zero gravity
The paper describes a research program designed to study the behavior of superfluid liquid helium in low and zero gravity in order to determine the properties which are critically important to its use as a stored cryogen for cooling scientific instruments aboard spacecraft for periods up to several months. The experiment program consists of a series of flights of an experiment package on a free-fall trajectory both on an aircraft and on a rocket. The objectives are to study thickness of thin films of helium as a function of acceleration, heat transfer in thin films, heat transfer across copper-liquid helium interfaces, fluid dynamics of bulk helium in high and low accelerations and under various conditions of rotations, alternate methods of separation of liquid and vapor phases and of efficient venting of the vapor, and undesirable thermomechanical oscillations in the vent pipes. Preliminary results from aircraft tests are discussed.
Mason, P.↗
Condensing, Two-Phase, Contact Heat Exchanger
Two-phase heat exchanger continuously separates liquid and vapor phases of working fluid and positions liquid phase for efficient heat transfer. Designed for zero gravity. Principle is adapted to other phase-separation applications; for example, in thermodynamic cycles for solar-energy conversion.
Cox, R. L.↗
Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport
The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.
Su, Ching-Hua↗
Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport
The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.
Su, Ching-Hua↗
Island Shape Instabilities and Surfactant-Like Effects in the Growth of InGaAs/GaAs Quantum Dots
InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.
Quantum↗
Real-Time Optical Monitoring of Flow Kinetics and Gas Phase Reactions Under High-Pressure OMCVD Conditions
This contribution addresses the real-time optical characterization of gas flow and gas phase reactions as they play a crucial role for chemical vapor phase depositions utilizing elevated and high pressure chemical vapor deposition (HPCVD) conditions. The objectives of these experiments are to validate on the basis of results on real-time optical diagnostics process models simulation codes, and provide input parameter sets needed for analysis and control of chemical vapor deposition at elevated pressures. Access to microgravity is required to retain high pressure conditions of laminar flow, which is essential for successful acquisition and interpretation of the optical data. In this contribution, we describe the design and construction of the HPCVD system, which include access ports for various optical methods of real-time process monitoring and to analyze the initial stages of heteroepitaxy and steady-state growth in the different pressure ranges. To analyze the onset of turbulence, provisions are made for implementation of experimental methods for in-situ characterization of the nature of flow. This knowledge will be the basis for the design definition of experiments under microgravity, where gas flow conditions, gas phase and surface chemistry, might be analyzed by remote controlled real-time diagnostics tools, developed in this research project.
Dietz, N.↗
A high-temperature optical cell for chemical analysis of vapor using combined spectroscopy approaches
This paper introduces a novel optical cell design that integrates ultraviolet-visible (UV-vis) and laser-induced breakdown spectroscopy (LIBS) for comprehensive vapor phase chemical analysis at temperatures up to 450 °C.
98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗