High Voltage Pulse Generator for Next Generation Light Sources and Colliders
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43 PARTICLE ACCELERATORS↗
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Multiple electron beam generation with different energies and comparable currents from a single cathode potential for high power traveling wave tubes (TWTs)
We present a technique for generating multiple electron beams with different energies and comparable currents from a single cathode stalk at a single potential using nested magnetically insulated coaxial diodes (MICDs). The application is for a multi-stream traveling wave tube. Particle-in-cell simulations are performed for an experimental parameter-based geometry where two thin-walled intense relativistic electron beams immersed in a strong uniform magnetic field propagate through a cylindrical vacuum channel. The analytically derived results are obtained by extending Fedosov’s solution for generating a hollow electron beam from an MICD on a cathode stalk in an infinite magnetic field. Two electron beams are generated and accelerated downstream assuming zero initial kinetic energy of the electrons from the cathodes. Results show both electron beam currents ranging from 66 to 2.8 kA with an energy difference ranging from 6% to 27% depending on voltages applied from 100 to 600 kV and the geometry of the two MICDs. An optimal geometry is a crucial factor in achieving the maximum energy difference between the electron beams for comparable currents. The analytical and numerical simulation results show good agreement. We are currently in the process of planning experiments using the electron beam accelerator (SINUS-6 at UNM) to validate the analytical and simulation results.
Islam, K. N. (ORCID:0000000214397710)↗
Noisy-Intermediate-Scale Quantum Electromagnetic Transients Program
Quantum-empowered electromagnetic transients program (QEMTP) is a promising paradigm for tackling EMTP's computational burdens. Nevertheless, no existing studies truly achieve a practical and scalable QEMTP operable on today's noisy-intermediate-scale quantum (NISQ) computers. The strong reliance on noise-free and fault-tolerant quantum devices--which appears to be decades away--hinder practical applications of current QEMTP methods. Here, we devise a NISQ-QEMTP methodology which for the first time transitions the QEMTP operations from ideal, noise-free quantum simulators to real, noisy quantum computers. The main contributions lie in: (1) a shallow-depth QEMTP quantum circuit for mitigating noises on NISQ quantum devices; (2) practical QEMTP linear solvers incorporating executable quantum state preparation and measurements for nodal voltage computations; (3) a noise-resilient QEMTP algorithm leveraging quantum resources logarithmically scaled with power system dimension; (4) a quantum shifted frequency analysis (QSFA) for accelerating QEMTP by exploiting dynamic phasor simulations with larger time steps; (5) a systematical analysis on QEMTPs performance under various noisy quantum environments. Extensive experiments systematically verify the accuracy, efficacy, universality and noise-resilience of QEMTP on both noise-free simulators and IBM real quantum computers.
29 ENERGY PLANNING, POLICY, AND ECONOMY↗
An Engineered Multifunctional Composite for Passive Sensing, Power Harvesting, and In Situ Damage Identification with Enhanced Mechanical Performance
A multifunctional fiber-reinforced composite with passive self-sensing, energy-harvesting, and damage detection capabilities is presented. In this work, barium titanate piezoelectric microparticles are deposited on basalt fibers by a scalable, low-cost, environmentally friendly continuous feed-through process. The resulting composite derives a superior interlaminar shear strength from the microparticle-modified fiber–matrix interfaces. The composite also demonstrates passive self-sensing capabilities that produce electrical signals proportional to various dynamic loading events. Vibration and strain-controlled experiments are performed on composite beams to quantify the sensitivity and power output as a function of input acceleration and strain. Furthermore, these composite-generated electrical signals are used to identify in situ damage initiation for structural health monitoring to inform composite damage prior to structural failure. In brief, this truly multifunctional composite simultaneously displays a sensitivity of 0.5–2.6 mV g -1 at a resolution of 0.045–0.20g (g = gravitational acceleration), energy harvesting in the range of nW cc -1 , and prediction of early damage by exhibiting 0.017–1.17 mV peaks in voltage–time history profiles while assuring ≈20% improved interlaminar shear strength.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Building the next high voltage dc photogun polarized source for the ILC at JLab
During the ILC Global Design Effort (2007) two 200 kV high voltage photoguns based on an inverted insulator geometry were developed in 2010 and successfully tested at Jefferson Lab (JLab). One of the photoguns has been operated at 130 kV in the CEBAF accelerator for the JLab nuclear physics program. The inverted insulator replaces the electrode support structure, consequently significantly less metal prone to field emission is biased and surfaces contributing to the vacuum load are significantly reduced. Implementing a biased anode, and using a larger laser spot size has made this the state of the art polarized beam source with ~200 C charge lifetime from SSL GaAs photocathodes. However, operating at the design 200 kV voltage has been hindered by field emission at ~190 kV. To reliably operate without field emission requires lengthy conditioning applying 50-100 kV beyond the voltage needed for beam operations, without breakdown or damage to the insulator. Over the past decade, JLab has developed two photoguns with a larger version of the commercial inverted insulators used in the ILC design. One photogun operated at 300 kV for magnetized beam studies, and the concept has been implemented in the BNL polarized photogun. The second photogun has recently been installed in CEBAF to operate at 200 kV field emission free. Higher voltage photoguns help the ILC and CLIC achieve higher bunch charge (2013 TDR), and additionally provide margin for operating with shorter laser pulse length and/or smaller laser spot size (better emittance at higher peak current). Such photogun designs need to reach ~400 kV without breakdown or insulator damage to operate field emission free at > 300 kV. This also allows for direct injection into a SRF booster. JLab submitted a proposal to HEP for developing in partnership with industry an inverted geometry insulator to fit commercial 400 kV cables. This contribution describes JLab experience developing and testing high voltage photoguns, and what is needed to sufficiently condition for voltage levels higher than beam operational voltage.
Hernandez-Garcia, Carlos↗
Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors
Thermal annealing is a widely used strategy to enhance semiconductor device performance. However, the process is complex for multi-material multi-layered semiconductor devices, where thermoelastic stresses from lattice constant and thermal expansion coefficient mismatch may create more defects than those annealed. We propose an alternate low temperature annealing technique, which utilizes the electron wind force (EWF) induced by small duty cycle high density pulsed current. To demonstrate its effectiveness, we intentionally degrade AlGaN/GaN high electron mobility transistors (HEMTs) with accelerated OFF-state stressing to increase ON-resistance ∼182.08% and reduce drain saturation current ∼85.82% of pristine condition at a gate voltage of 0 V. We then performed the EWF annealing to recover the corresponding values back to ∼122.21% and ∼93.10%, respectively. The peak transconductance, degraded to ∼76.58% of pristine at the drain voltage of 3 V, was also recovered back to ∼92.38%. This recovery of previously degraded transport properties is attributed to approximately 80% recovery of carrier mobility, which occurs during EWF annealing. We performed synchrotron differential aperture x-ray microscopy measurements to correlate these annealing effects with the lattice structural changes. We found a reduction of lattice plane spacing of (001) planes and stress within the GaN layer under the gate region after EWF annealing, suggesting a corresponding decrease in defect density. Application of this low-temperature annealing technique for in-operando recovery of degraded electronic devices is discussed.
Physics↗
A “Master Curve” Describing Reaction Inhomogeneity and Plating Onset during Fast-Charging of Graphite Electrodes
Lithium plating in porous graphite electrodes is a major limitation for fast charging. Theoretical evidence suggests plating during fast charging is largely due to inhomogeneous intercalation through the electrode thickness (caused by ionic/mass transfer limitations and inherent thermodynamic properties of the graphite material). Numerical and analytical predictions of plating onset during fast charging have been proposed but not compared directly with experiments. This work validates these model predictions against plating onset measurements via the “dOCV” method in graphite half-cells, for various electrode thicknesses and C-rates. Remarkably, it is shown that experimental and theoretical trends in plating onset (vs C-rate and electrode thickness) collapse to a single “master curve” using a nondimensional “reaction inhomogeneity” parameter. This observation supports the hypothesized reaction inhomogeneity mechanism for accelerating plating onset and provides practical guidance for electrode design. Furthermore, this work develops theory to quantify reaction inhomogeneity in situ directly from voltage V vs capacity Q data, using dQ / dV analysis. Here again, experiments and numerical predictions show good agreement, where peaks that correspond to LiC 6 correlate with plating onset. This work provides experimental validation of theoretical tools that can predict plating onset, aid electrode design, and give insight for plating onset mechanisms during fast charging.
25 ENERGY STORAGE↗
Constraints on light QCD and CP-violating axions from the death line of rotation-powered pulsars
For axions that couple to nucleons, the presence of dense nuclear matter can displace the axion from its vacuum minimum, sourcing large field gradients around neutron stars (and, more generally, compact objects). These gradients, which we refer to as axion hair, couple to the local background magnetic field, inducing a large voltage drop near the surface of the star; here, we demonstrate that the presence of axion hair decouples local near-field particle acceleration in the open magnetic field line bundle from the rotational frequency of the pulsar itself. This is significant as the non-observation of old slowly-rotating pulsars is attributed to the fact the rotationally-induced electric fields are not strong enough to sustain $e^\pm$ pair production. In this work, we review the evidence for the existence for `pulsar death', i.e. the threshold at which $e^\pm$ pair production (and thus, by association, coherent radio emission) ceases, and demonstrate using both semi-analytics and particle-in-cell simulations that the existence of axion hair can dramatically extend pulsar lifetimes. We show that the non-observation of extremely old, slowly rotating, pulsars allows for a new probe of light QCD and CP-violating axions. We also demonstrate how the observation of emission from both poles of pulsars with nearly orthogonal rotational and magnetic axes, as seen e.g. in PSR J1906+0746, can be used to set competitive limits on CP-violating axion-nucleon interactions.
Witte, Samuel J. [Oxford U., Theor. Phys.; DESY; H↗
High-Efficiency Inductive Output Tubes Using a Third Harmonic Drive on the Grid
In this article, we discuss the use of a third harmonic component to the drive voltage on the grid of an inductive output tube (IOT). High-efficiency IOTs are typically characterized by efficiencies up to 70%–75%. However, the achievement of efficiencies greater than 80% would substantially reduce the operating costs of next-generation accelerators. In order to achieve this goal, we consider the addition of a third harmonic component to the drive signal on the grid of an IOT. The use of a third harmonic drive component in IOT guns has been considered in order to apply such a gun as the injector of radio frequency linear accelerators (RF linacs). Furthermore, we consider that the IOT will be used to provide the rf power to drive RF linacs and apply the third harmonic with the intention of increasing the efficiency of the RF output of the IOT. We consider a model IOT with a 700-MHz resonant cavity and using an annular beam with a voltage of 30 kV, an average current of 6.67 A yielding a perveance of about 1.3 μP. We simulate this IOT using the NEMESIS simulation code which has been successfully validated by comparison with the K5H90W-2 IOT developed by Communications and Power Industries. It is found that the effect of the third harmonic on the efficiency is greatest when the phase of the third harmonic is shifted by radians with respect to the fundamental drive signal and with third harmonic powers greater than about 50% that of the fundamental drive power. For the present example, we show that efficiencies approaching 86% are possible by this means.
43 PARTICLE ACCELERATORS↗
Correction of crosstalk effect in the Low Energy RHIC electron Cooler Booster Cavity
we report that the Low Energy Relativistic Heavy Ion Collider (RHIC) electron Cooler (LEReC) is designed to deliver a 1.6 MeV to 2.6 MeV electron beam, with rms dp/p less than 5e-4. The superconducting radiofrequency (SRF) Booster Cavity is the major accelerating component in LEReC. It is a 0.4 cell cavity operating at 2 K, providing a maximum energy gain of 2.2 MeV. It is modified from an experimental Energy Recovery Linac (ERL) photocathode gun, and thus has fundamental power couplers (FPCs), pickup (PU) couplers (field probes) and HOM coupler close to each other on the same side of the cavity. Direct capacitive coupling between the FPC and PU, called the crosstalk effect, combined with microphonic detuning, can induce closed loop voltage fluctuations that exceed the total energy spread requirement of LEReC. The crosstalk effect in this cavity is modelled, simulated, and measured, and a correction method is proposed and demonstrated to suppress the voltage fluctuation so that energy spread requirement can be met.
43 PARTICLE ACCELERATORS↗
Construction of Cryogen-Free 4.3T Superconducting Wiggler for NSLS-II Ring
With the 3 GeV electron beam energy for the National Synchrotron Light Source II (NSLS-II) ring, only superconducting wigglers (SCW) producing greater than 4T peak field can cover the photon energy range of 20 keV and 200 keV with sufficient number of photons. The High energy Engineering X-ray (HEX) Diffraction beamline, which is primarily funded by the New York State Energy Research and Development Authority (NYSERDA) and NSLS-II, will be equipped with a 1.2m-long SCW with 70 mm period length and 4.3 T on-axis field. This SCW is free from the use of liquid Helium and is cooled only with cryo-coolers. The Electron Beam Chamber (EBC) with vertical aperture of 8 mm is made from 316LN stainless steel and copper plating is applied both surface and +-12.5mm wide from the center in the inner surface. The expected heat load from the electron beam of the NSLS-II ring is estimated to be 10 W/m. Here, we describe the design principles and engineering challenges for the device.
36 MATERIALS SCIENCE↗
Particles scattering in a HVDC gun
The Electron Ion Collider (EIC) hadron cooling electron source will utilize a high average current, high voltage DC gun ,aiming to generate 1nC, 100 mA average current, and 1mm-mrad normalized emittance[1]. One of the challenges in designing and operating the HVDC gun is the occurrence of undesired "ghost" particles that disrupt the gun's operation. In other words, the high voltage power supply (HVPS) trips more frequently when pushing to higher current.
43 PARTICLE ACCELERATORS↗
Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems
The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.
42 ENGINEERING↗
Surface processing and discharge-conditioning of high voltage electrodes for the Ra EDM experiment
The Ra EDM experiment uses a pair of high voltage electrodes to search for the atomic electric dipole moment of 225 Ra. We use identical, plane–parallel electrodes with a primary high gradient surface of 200 mm 2 to generate reversible DC electric fields. Our statistical sensitivity is linearly proportional to the electric field strength in the electrode gap. We adapted surface decontamination and processing techniques from accelerator physics literature to chemical polish and clean a suite of newly fabricated large-grain niobium and grade-2 titanium electrodes. Three pairs of niobium electrodes and one pair of titanium electrodes were discharge-conditioned with a custom high voltage test station at electric field strengths as high as +52.5 kV/mm and –51.5 kV/mm over electrode gap sizes ranging from 0.4 mm to 2.5 mm. One pair of large-grain niobium electrodes was discharge-conditioned and validated to operate at ±20 kV/mm with steady-state leakage current ≤ 25 pA (1σ) and a polarity-averaged 98 ± 19 discharges per hour. These electrodes were installed in the Ra EDM experimental apparatus, replacing a copper electrode pair, and were revalidated to ±20 kV/mm. Here, the niobium electrodes perform at an electric field strength 3.1 times larger than the legacy copper electrodes and are ultimately limited by the maximum output of our 30 kV bipolar power supply.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Ultrafast High-Voltage Kicker System for Ion-Clearing Gaps
Ionization scattering of electron beams with residual gas molecules causes ion trapping in electron rings, both in a collider and electron cooling system. These trapped ions may cause emittance growth, tune shift, halo formation, and coherent coupled bunch instabilities. In order to clear the ions and prevent them from accumulating turn after turn, the gaps in a temporal structure of the beam are typically used. Typically, the gap in the bunch train has a length of a few percent of the ring circumference. In those regions, the extraction electrodes with high pulsed voltages are introduced. In this paper, we present the design consideration and initial test results of the high-voltage pulsed kicker hardware that includes vacuum device and pulsed voltage driver, capable of achieving over 3 kV of deflecting voltage amplitude, rise and fall times of less than 10 ns, 100 ns flat-top duration at 1.4 MHz repetition rate.
43 PARTICLE ACCELERATORS↗
MIND-MAC: Multi-Level In-memory Quasi Non-Destructive MAC Operation in Compact 2T-nC FeRAM for Efficient DNN Accelerator
We present MIND-MAC, a compact 2T-nC FeRAM architecture that performs multi-level, quasi-non-destructive in-memory multiply–accumulate (MAC) for deep neural networks. By exploiting voltage-controlled partial domain switching in MFM capacitors and read-transistor amplification, the cell stores multi-bit weights and gates bit-serial inputs to produce an accumulated current on shared lines. We combine TCAD-extracted parasitics with experimentally calibrated ferroelectric models in SPICE to validate device-/circuit-level behavior, and validate multi-level sensing and QNRO with measurements on a fabricated 2T-3C test vehicle. An analytical system model maps MIND-MAC to a 6-GB main-memory in-memory compute (IMC) architecture and benchmarks VGG13 inference in 61.08 ms at 964.99 mJ. Results indicate high density, reduced rewrite overhead, and energy efficiency, positioning 2T-nC FeRAM as a promising IMC candidate for next-generation AI hardware.
36 MATERIALS SCIENCE↗
On Forced RF Generation of CW Magnetrons for SRF Accelerators
CW magnetrons, initially developed for industrial RF heaters, were suggested to power RF cavities of superconducting accelerators due to their higher efficiency and lower cost than traditionally used klystrons, IOTs or solid-state amplifiers. RF amplifiers driven by a master oscillator serve as coherent RF sources. CW magnetrons are regenerative RF generators with a huge regenerative gain. This causes regenerative instability with a large noise when a magnetron operates with the anode voltage above the threshold of self-excitation. Traditionally for stabilization of magnetrons is used injection locking by a quite small signal. Then the magnetron except the injection locked oscillations may generate noise. This may preclude use of standard CW magnetrons in some SRF accelerators. Recently we developed briefly described below a mode for forced RF generation of CW magnetrons when the magnetron startup is provided by the injected forcing signal and the regenerative noise is suppressed. The mode is most suitable for powering high Q-factor SRF cavities.
43 PARTICLE ACCELERATORS↗
Analysis and mitigation of parasitic resistance effects for analog in-memory neural network acceleration
To support the increasing demands for efficient deep neural network processing, accelerators based on analog in-memory computation of matrix multiplication have recently gained significant attention for reducing the energy of neural network inference. However, analog processing within memory arrays must contend with the issue of parasitic voltage drops across the metal interconnects, which distort the results of the computation and limit the array size. This work analyzes how parasitic resistance affects the end-to-end inference accuracy of state-of-the-art convolutional neural networks, and comprehensively studies how various design decisions at the device, circuit, architecture, and algorithm levels affect the system's sensitivity to parasitic resistance effects. Here, a set of guidelines are provided for how to design analog accelerator hardware that is intrinsically robust to parasitic resistance, without any explicit compensation or re-training of the network parameters.
97 MATHEMATICS AND COMPUTING↗