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At least 199 records · Page 11

Characteristics of Multi-scale Current Sheets in the Solar Wind at 1 au Associated with Magnetic Reconnection and the Case for a Heliospheric Current Sheet Avalanche

Wind spacecraft measurements are analyzed to obtain a current sheet (CS) normal width dcs-distribution of 3374 confirmed magnetic reconnection exhausts in the ecliptic plane of the solar wind at 1 AU. The dcs-distribution displays a nearly exponential decay from a peak at dcs=25 di to a median at dcs=85 di and a 95th percentile at dcs=905 di with a maximum exhaust width at dcs=8077 di. A magnetic field ϴ-rotation angle distribution increases linearly from a relatively few high-shear events toward a broad peak at 35o<ϴ<65o. The azimuthal φ-angles of the CS normal directions of 430 thick dcs≥500 di exhausts are consistent with a dominant Parker-spiral magnetic field and a CS normal along the ortho-Parker direction. The CS normal orientations of 370 kinetic-scale dcs<25 di exhausts are isotropic in contrast, and likely associated with Alfvénic solar wind turbulence. We propose that the alignment of exhaust normal directions from narrow dcs~15-25 di widths to well beyond dcs~500 di with an ortho-Parker azimuthal direction of a large-scale HCS is a consequence of CS bifurcation and turbulence within the HCS exhaust that may trigger reconnection of the adjacent pair of bifurcated CSs. The proposed HCS-31 avalanche scenario suggests that the underlying large-scale parent HCS closer to the Sun evolves with heliocentric distance to fracture into many, more or less aligned, secondary current sheets due to reconnection. A few wide exhaust-associated HCS-like CSs could represent a population of HCSs that failed to reconnect as frequently between the Sun and 1 AU as other HCSs.

Stefan Eriksson↗

Avalanche photodiode and an optical receiver having the same

Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.

Yuan, Yuan↗

Influence of doping and thickness on domain avalanches in lead zirconate titanate thin films

In undoped lead zirconate titanate films of 1–2 μm thick, domain walls move in clusters with a correlation length of approximately 0.5–2 μm. Band excitation piezoresponse force microscopy mapping of the piezoelectric nonlinearity revealed that niobium (Nb) doping increases the average concentration or mobility of domain walls without changing the cluster area of correlated domain wall motion. In comparison, manganese (Mn) doping reduces the contribution of mobile domain walls to the dielectric and piezoelectric responses without changing the cluster area for correlated motion. In both Nb and Mn doped films, the cluster area increases and the cluster density drops as the film thickness increases from 250 to 1250 nm. This is evident in spatial maps generated from the analysis of irreversible to reversible ratios of the Rayleigh coefficients.

36 MATERIALS SCIENCE↗