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At least 199 records · Page 11

Shields-1 Energetic Proton Dose Comparison from Solar Minimum and Active Periods

Shields-1 has been operating in polar low earth orbit since December 2018 as part of the CubeSat Launch Initiative (CSLI) Educational Launch of Nanosatellites (ELaNa)XIX Mission. Shields-1 has 8 Teledyne µdosimeters behind shielding. These shielded µdosimeters have high minimum proton energy thresholds. The Shields-1 electronics enclosure µdosimeter has a minimum proton threshold energy of 151 MeV. The annualized total ionizing dose (TID) in the electronics enclosure was 75.6 +/- 3.2 RAD from July-August 2019, which was a solar minimum period. In contrast, the annualized TID was 61.0 +/- 2.5 RAD in July 2023, a solar active month. The TID change can be attributed to both the reduction in radiation at the South Atlantic Anomaly (SAA) and the decrease in galactic cosmic radiation during increasing solar activity. The measured GCR dose over the poles was reduced during the July 2023 solar active period in comparison with the July 2019 solar minimum period, using the most sensitive µdosimeter channel for the measurement. Shields-1 has demonstrated the capability of measuring the changes in high energy protons in polar low earth orbit during changes in solar activity, which contributes to the understanding of Earth in the heliosphere.

Shields-1 Dosimetry Space Sciences↗

Threshold law for positron-atom impact ionisation

The threshold law for ionisation of atoms by positron impact is adduced in analogy with our approach to the electron-atom ionization. It is concluded the Coulomb-dipole region of the potential gives the essential part of the interaction in both cases and leads to the same kind of result: a modulated linear law. An additional process which enters positron ionization is positronium formation in the continuum, but that will not dominate the threshold yield. The result is in sharp contrast to the positron threshold law as recently derived by Klar on the basis of a Wannier-type analysis.

Temkin, A.↗

Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films

Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (a-Se) as a wide bandgap at ~2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact ionization gain and manifests ultralow thermal generation rates. A comprehensive study of the history dependent and non-Markovian nature of hot hole transport in a-Se was modeled using a Monte Carlo (MC) random walk of single hole free flights, interrupted by instantaneous phonon, disorder, hole–dipole, and impact-ionization scattering interactions. The hole excess noise factors were simulated for 0.1–15 μm a-Se thin-films as a function of mean avalanche gain. The hole excess noise factors in a-Se decreases with an increase in electric field, impact ionization gain, and device thickness. The history dependent nature of branching of holes is explained using a Gaussian avalanche threshold distance distribution and the dead space distance, which increases determinism in the stochastic impact ionization process. An ultralow non-Markovian excess noise factor of ~1 was simulated for 100 nm a-Se thin films corresponding to avalanche gains of 1000. Future detector designs can utilize the nonlocal/non-Markovian nature of the hole avalanche in a-Se, to enable a true solid-state photomultiplier with noiseless gain.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Chemical templates of the Central Molecular Zone

Context . The Central Molecular Zone (CMZ) of the Milky Way exhibits extreme conditions, including high gas densities, elevated temperatures, enhanced cosmic-ray ionization rates, and large-scale dynamics. This makes it a perfect laboratory for astrochemical studies. With large-scale molecular surveys revealing increasing chemical and physical complexity in the CMZ, it is essential to develop robust methods to decode the chemical information embedded in this extreme region. Aims . A key step to interpreting the molecular richness found in the CMZ is building chemical templates tailored to its diverse conditions. In particular, understanding how CMZ environments affect shock and protostellar chemistry is crucial. The combined impact of high ionization, elevated temperatures, and dense gas remains insufficiently explored for observable tracers. Methods . For this study, we utilized UCLCHEM , a gas-grain time-dependent chemical model, to link physical conditions with their corresponding molecular signatures and identify key tracers of temperature, density, ionization, and shock activity. To achieve this, we ran a grid of models of shocks and protostellar objects representative of typical CMZ conditions, focusing on 24 species, including complex organic molecules. Results . Shocked and protostellar environments show distinct evolutionary timescales (≲10 4 vs. ≳10 4 years); 300 K emerges as a key temperature threshold for chemical differentiation. We find that cosmic-ray ionization and temperature are the main drivers of chemical trends. HCO + , H 2 CO, and CH 3 SH trace ionization, while HCO, HCO + , CH 3 SH, CH 3 NCO, and HCOOCH 3 show consistent abundance contrasts between shocks and protostellar regions over similar temperature ranges. Conclusions . We characterized the behavior of 24 species in protostellar and shock-related environments. While our models underpredict some complex organics in shocks, they reproduce observed trends for most species, supporting scenarios involving a need for recurring shocks in Galactic Center clouds and enhanced ionization toward Sgr B2(N2). Future work should assess the role of shock recurrence and metallicity in shaping chemistry.

Galaxy: center↗

s-wave threshold in electron attachment - Observations and cross sections in CCl4 and SF6 at ultralow electron energies

The threshold photoionization method was used to study low-energy electron attachment phenomena in and cross sections of CCl4 and SF6 compounds, which have applications in the design of gaseous dielectrics and diffuse discharge opening switches. Measurements were made at electron energies from below threshold to 140 meV at resolutions of 6 and 8 meV. A narrow resolution-limited structure was observed in electron attachment to CCl4 and SF6 at electron energies below 10 meV, which is attributed to the divergence of the attachment cross section in the limit epsilon, l approaches zero. The results are compared with experimental collisional-ionization results, electron-swarm unfolded cross sections, and earlier threshold photoionization data.

Chutjian, A.↗

Ultrafast Laser Material Damage Simulation—A New Look at an Old Problem

The chirped pulse amplification technique has enabled the generation of pulses of a few femtosecond duration with peak powers multi-Tera and Peta–Watt in the near infrared. Its implementation to realize even shorter pulse duration, higher energy, and higher repetition rate laser systems relies on overcoming the limitations imposed by laser damage of critical components. In particular, the laser damage of coatings in the amplifiers and in post-compression optics have become a bottleneck. The robustness of optical coatings is typically evaluated numerically through steady-state simulations of electric field enhancement in multilayer stacks. However, this approach cannot capture crucial characteristics of femtosecond laser induced damage (LID), as it only considers the geometry of the multilayer stack and the optical properties of the materials composing the stack. This approach neglects that in the interaction of an ultrashort pulse and the materials there is plasma generation and associated material modifications. Here, we present a numerical approach to estimate the LID threshold of dielectric multilayer coatings based on strong field electronic dynamics. In this dynamic scheme, the electric field propagation, photoionization, impact ionization, and electron heating are incorporated through a finite-difference time-domain algorithm. We applied our method to simulate the LID threshold of bulk fused silica, and of multilayer dielectric mirrors and gratings. The results are then compared with experimental measurements. The salient aspects of our model, such as the implementation of the Keldysh photoionization model, the impact ionization model, the electron collision model for ‘low’-temperature, dense plasma, and the LID threshold criterion for few-cycle pulses are discussed.

36 MATERIALS SCIENCE↗

Avalanche mechanism for runaway electron amplification in a tokamak plasma

The avalanche of runaway electrons is thought to pose a significant obstacle to the success of reactor scale devices such as ITER. As a result, a significant effort has been devoted toward quantifying both the threshold for the initiation of the avalanche of runaway electrons and the efficiency of the avalanche mechanism. In this work, these two quantities are computed utilizing a guiding-center formulation with large-angle collision operators of varying physics fidelity. The use of a guiding-center formulation, while computationally more costly compared to bounce-averaged approaches, provides a conceptually straightforward means of incorporating tokamak geometry. It is found that while the avalanche threshold is only weakly impacted by toroidal geometry for fully ionized low- Z plasmas, it can be significantly impacted if high- Z impurities are present. Furthermore, it is shown that the efficiency of the avalanche mechanism depends sensitively on the impurity content, the charge state of the underlying impurities, and the radial profile of the seed electron population. Lastly, the commonly employed Møller secondary source term used to model the generation of secondary electrons is shown to yield avalanche growth rates and thresholds in good agreement with a more complete conservative large-angle collision operator.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Core level excitation of simple gases

The ionization of simple gases by electron bombardment exhibits distinct resonances at electron energies slightly below the core level binding energies of the atomic constituents of the gas. A vacancy in an inner shell of the atom may recombine by a radiationless Auger process, thus leaving the molecule in a singly or higher ionized state. These ions are easily collected and the threshold resonances for excitation are evident in the second derivative of the ion yield plotted as a function of the energy of the electron beam. By using a mixture of gases, such as CO and CO2, it is possible to measure relative chemical shifts of the C and O 1s thresholds. In this case the C 1s threshold is 3.9 eV lower in CO than in CO2, and the O 1s threshold is 2.7 eV lower in CO than in CO2. The feasibility of constructing a simple analyzer based on this technique will be discussed to supplement conventional mass spectrometer analysis of gas composition.

Zhang, A.↗

Single Particle Damage Events in Candidate Star Camera Sensors

Si charge coupled devices (CCDs) are currently the preeminent detector in star cameras as well as in the near ultraviolet (uv) to visible wavelength region for astronomical observations in space and in earth-observing space missions. Unfortunately, the performance of CCDs is permanently degraded by total ionizing dose (TID) and displacement damage effects. TID produces threshold voltage shifts on the CCD gates and displacement damage reduces the charge transfer efficiency (CTE), increases the dark current, produces dark current nonuniformities and creates random telegraph noise in individual pixels. In addition to these long term effects, cosmic ray and trapped proton transients also interfere with device operation on orbit. In the present paper, we investigate the dark current behavior of CCDs - in particular the formation and annealing of hot pixels. Such pixels degrade the ability of a CCD to perform science and also can present problems to the performance of star camera functions (especially if their numbers are not correctly anticipated). To date, most dark current radiation studies have been performed by irradiating the CCDs at room temperature but this can result in a significantly optimistic picture of the hot pixel count. We know from the Hubble Space Telescope (HST) that high dark current pixels (so-called hot pixels or hot spikes) accumulate as a function of time on orbit. For example, the HST Advanced Camera for Surveys/Wide Field Camera instrument performs monthly anneals despite the loss of observational time, in order to partially anneal the hot pixels. Note that the fact that significant reduction in hot pixel populations occurs for room temperature anneals is not presently understood since none of the commonly expected defects in Si (e.g. divacancy, E center, and A-center) anneal at such a low temperature. A HST Wide Field Camera 3 (WFC3) CCD manufactured by E2V was irradiated while operating at -83C and the dark current studied as a function of temperature while the CCD was warmed to a sequence of temperatures up to a maximum of +30C. The device was then cooled back down to -83 and re-measured. Hot pixel populations were tracked during the warm-up and cool-down. Hot pixel annealing began below 40C and the anneal process was largely completed before the detector reached +3OC. There was no apparent sharp temperature dependence in the annealing. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless remained warmer than the remaining population. The details of the mechanism for the formation and annealing of hot pixels is not presently understood, but it appears likely that hot pixels are associated with displacement damage occurring in high electric field regions.

Marshall, Paul↗

Double ionization of atomic oxygen by electron impact

Laboratory measurements of the cross-sections for double ionization of atomic oxygen by electrons are presented for energies from threshold to approximately 400 eV. A maximum cross-section of about 5.6 x 10 to the -18th sq cm is observed at an electron energy of approx. 200 eV. Absolute cross-sections are obtained from measurements of the ratio of the cross-sections for double and single ionization, coupled with absolute cross-sections for single ionization previously measured by other investigators. The possible effects of excited oxygen reactants are examined, and the reported cross-sections are considered to be characteristic of ground state oxygen atoms.

Ziegler, D. L.↗

Electron and ion spectroscopy of azobenzene in the valence and core shells

Azobenzene is a prototype and a building block of a class of molecules of extreme technological interest as molecular photo-switches. We present a joint experimental and theoretical study of its response to irradiation with light across the UV to x-ray spectrum. The study of valence and inner shell photo-ionization and excitation processes combined with measurement of valence photoelectron-photoion coincidence and mass spectra across the core thresholds provides a detailed insight into the site- and state-selected photo-induced processes. Photo-ionization and excitation measurements are interpreted via the multi-configurational restricted active space self-consistent field method corrected by second order perturbation theory. Using static modeling, we demonstrate that the carbon and nitrogen K edges of azobenzene are suitable candidates for exploring its photoinduced dynamics thanks to the transient signals appearing in background-free regions of the NEXAFS and XPS.

Chemistry↗

K-shell photoionization cross-sections.

Approximate values for the threshold energies, threshold cross sections, and energy dependence of the cross sections for K-shell photoionization are tabulated for H, He, C, N, O, Ne, Mg, Si, and S in all stages of ionization. The approximation of these data is based on the assumptions that the threshold energy is a simple function of the nuclear charge and the number of electrons present in the atom, and that the threshold values and energy dependence of the cross sections are determined only by the threshold energy.

Daltabuit, E.↗

Electron scattering with ethane adsorbed on rare gas multilayers: Hole transfer, coulomb decay, and ion dissociation

Positive ion desorption following electron impact dissociative ionization of ethane adsorbed on Ar, Kr, and Xe multilayers has been studied as a function of incident electron energy from threshold to 100 eV. Based on the dependence of ion yields on the identity of the rare gas, it is likely that the majority of ethane molecules undergo indirect ionization following hole transfer from the ionized underlying rare gas. Further, this has also been corroborated by density of states calculations showing the energetic alignment of the outer valence states of ethane and the condensed rare gas ionization energies. Due to the near-resonant nature of charge transfer for single-hole states, the ethane molecular ion is excited to different final ionic states on different rare gases, which leads to differences in ion desorption yields and branching ratios. The quantitative yields increase with increasing ionization energy gap between the rare gas and ethane, in the order Ar > Kr >Xe. The large increase in yields from 25 eV onwards for all rare gases is likely due to the formation and decay of two-hole states on neighboring rare gas and ethane molecules due to interatomic and intermolecular Coulomb decay (ICD) and not electron transfer mediated decay (ETMD). The ICD and ETMD pathways become accessible when the incoming electron has sufficient energy to excite the inner valence ns level of the rare gas to a Rydberg state or ionize it. The experimental findings are supported by calculations of thresholds, density of states for the final configurations of these processes, and coupling strengths for hole transfer between ethane and rare gases. The fragment ion branching ratios vary with energy from threshold to about 35 eV, showing the fragmentation pattern changes with the mode of hole transfer and availability of excess energy. Sigma C–C bonds are more likely to break than C–H bonds in the mid-20 eV range, and this effect is most pronounced for Xe, followed by Kr, and then Ar.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Molecular Data for a Biochemical Model of DNA Radiation Damage: Electron Impact Ionization and Dissociative Ionization of DNA Bases and Sugar-Phosphate Backbone

As part of the database for building up a biochemical model of DNA radiation damage, electron impact ionization cross sections of sugar-phosphate backbone and DNA bases have been calculated using the improved binary-encounter dipole (iBED) model. It is found that the total ionization cross sections of C3'- and C5'-deoxyribose-phospate, two conformers of the sugar-phosphate backbone, are close to each other. Furthermore, the sum of the ionization cross sections of the separate deoxyribose and phosphate fragments is in close agreement with the C3'- and C5'-deoxyribose-phospate cross sections, differing by less than 10%. Of the four DNA bases, the ionization cross section of guanine is the largest, then in decreasing order, adenine, thymine, and cytosine. The order is in accordance with the known propensity of oxidation of the bases by ionizing radiation. Dissociative ionization (DI), a process that both ionizes and dissociates a molecule, is investigated for cytosine. The DI cross section for the formation of H and (cytosine-Hl)(+), with the cytosine ion losing H at the 1 position, is also reported. The threshold of this process is calculated to be 17.1 eV. Detailed analysis of ionization products such as in DI is important to trace the sequential steps in the biochemical process of DNA damage.

Dateo, Christopher E.↗

Multichannel photoelectron phase lag across atomic barium autoionizing resonances

Phase lag associated with coherent control where an excited system decays into more than one product channel has been subjected to numerous investigations. Although previous theoretical studies have treated the phase lag across resonances in model calculations, quantitative agreement has never been achieved between the theoretical model and an experimental measurement of the phase lag from the ω-2ω ionization of atomic barium. Yamazaki and Elliot, Phys. Rev. Lett. 98, 053001 (2007); Phys. Rev. A 76, 053401 (2007), suggesting that a toy model with phenomenological parameters is inadequate to describe the observed phase lag behavior. Here the phase lag is treated quantitatively in a multichannel coupling formulation, and our calculation based on a multichannel quantum defect and R-matrix treatment achieves good agreement with the experimental observations. Our treatment also develops formulas to describe the effects of hyperfine depolarization on multiphoton ionization processes. Moreover, we identify resonances between Ba + 5d 3/2 and 5d 5/2 thresholds that have apparently never been experimentally observed and classified.

74 ATOMIC AND MOLECULAR PHYSICS↗

Sensitivity of future liquid argon dark matter search experiments to core-collapse supernova neutrinos

Future liquid-argon DarkSide-20k and ARGO detectors, designed for direct dark matter search, will be sensitive also to core-collapse supernova neutrinos, via coherent elastic neutrino-nucleus scattering. This interaction channel is flavor-insensitive with a high-cross section, enabling for a high-statistics neutrino detection with target masses of $\sim$50~t and $\sim$360~t for DarkSide-20k and ARGO, respectively. Thanks to the low-energy threshold of $\sim$0.5~keV$_{nr}$ achievable by exploiting the ionization channel, DarkSide-20k and ARGO have the potential to discover supernova bursts throughout our galaxy and up to the Small Magellanic Cloud, respectively, assuming a 11-M$_{\odot}$ progenitor star. We report also on the sensitivity to the neutronization burst, whose electron neutrino flux is suppressed by oscillations when detected via charged current and elastic scattering. Finally, the accuracies in the reconstruction of the average and total neutrino energy in the different phases of the supernova burst, as well as its time profile, are also discussed, taking into account the expected background and the detector response.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Precision measurement of Compton scattering in silicon with a skipper CCD for dark matter detection

Experiments aiming to directly detect dark matter through particle recoils can achieve energy thresholds of $\mathcal{O}(1\,\mathrm{eV})$. In this regime, ionization signals from small-angle Compton scatters of environmental $\gamma$-rays constitute a significant background. Monte Carlo simulations used to build background models have not been experimentally validated at these low energies. We report a precision measurement of Compton scattering on silicon atomic shell electrons down to 23$\,$eV. A skipper charge-coupled device (CCD) with single-electron resolution, developed for the DAMIC-M experiment, was exposed to a $^{241}$Am $\gamma$-ray source over several months. Features associated with the silicon K, L$_{1}$, and L$_{2,3}$-shells are clearly identified, and scattering on valence electrons is detected for the first time below 100$\,$eV. We find that the relativistic impulse approximation for Compton scattering, which is implemented in Monte Carlo simulations commonly used by direct detection experiments, does not reproduce the measured spectrum below 0.5$\,$keV. The data are in better agreement with $ab$$initio$ calculations originally developed for X-ray absorption spectroscopy.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Direct double ionization of the Ar + M shell by a single photon

Direct double ionization of the Ar + (3p –1 ) ion by a single photon is investigated both experimentally and theoretically. The photon-ion merged-beams technique was employed at the Advanced Light Source in Berkeley, USA, to measure absolute cross sections in the energy range from 60 to 150 eV. In this range, three contributions to the double ionization of Ar + are to be expected: the removal of two 3p electrons, of a 3s and a 3p electron, and of two 3s electrons. Among the possible mechanisms leading to double ionization, the TS1 (two-step one) process dominates in the near-threshold region. In TS1, a photoelectron is ejected and, on its way out, knocks out a secondary electron. Here, this two-step mechanism is treated theoretically by multiplying the calculated cross section for direct single photoionization of a given subshell with the calculated (e, 2e) ionization probability for the ejected photoelectron to knock off a secondary electron. The calculated cross section is in very good agreement with the experiment.

74 ATOMIC AND MOLECULAR PHYSICS↗