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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Magnetic probe diagnostics of nonlinear standing waves and bulk ohmic electron power absorption in capacitive discharges

It is recognized that standing wave effects appearing in large-area, very-high-frequency capacitively coupled plasma (CCP) reactors cause center-high plasma non-uniformity. Using a high-frequency magnetic probe, we present a direct experimental diagnostic of the nonlinear standing waves and bulk ohmic electron power absorption dynamics in low pressure CCP discharges for different driving frequencies of 13.56, 30, and 60 MHz. The design, principle, calibration, and validation of the probe are described in detail. Spatial structures of the harmonics of the magnetic field, determined by the magnetic probe, were used to calculate the distributions of the harmonic current and the corresponding ohmic electron power deposition, providing insights into the behavior of nonlinear harmonics. At a low driving frequency, i.e. 13.56 MHz, no remarkable nonlinear standing waves were identified and the bulk ohmic electron power absorption was observed to be negligible. Here, the harmonic magnetic field/current was found to increase dramatically with the driving frequency, due to decreased sheath reactance and more remarkable nonlinear standing waves at a higher driving frequency, leading to the enhancements of the ohmic heating and the plasma density in the bulk, specifically at the electrode center. At a high driving frequency, i.e. 60 MHz, the high-order harmonic current density and the corresponding ohmic electron power absorption exhibited a similar node structure, with the main peak on axis, and one or more minor peaks between the electrode center and the edge, contributing to the center-high profile of the plasma density.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Dual Mechanism for Transient Capacitance Anomaly in Improper Ferroelectrics

Negative capacitance (NC) effects in ferroelectrics can potentially break fundamental limits of power dissipation known as “Boltzmann tyranny.” However, the origin of transient NC of ferroelectrics, which is attributed to two different mechanisms involving free-energy landscape and nucleation, is under intense debate. Here, we report the coexistence of transient NC and an S-shaped anomaly during the switching of ferroelectric hexagonal ferrites capacitor in an RC circuit. The early-stage NC arises from the nucleation process, while the late-stage S-shaped anomaly corresponds to a nascent NC associated with the free-energy landscape. The entire waveform can be reproduced using a hybrid model that simultaneously incorporates these two mechanisms. These results highlight the multivariable free-energy landscape of hexagonal ferrites that enables an abrupt change of the internal field and demonstrate that the two mechanisms are not mutually exclusive, resolving the long-standing debate. In conclusion, the behavior of the S-shaped anomaly also provides a pathway to extract parameters of free-energy landscape and switching dynamics.

Capacitance↗
DOE OSTI2022

Development and Validation of Resistance-Capacitance Model for Phase Change Material Embedded in Porous Media

A simple and effective way to enhance PCM thermal conductivity is by embedding porous materials with high thermal conductivities. In this work, CFD was used to evaluate the melting of PCM embedded in metal foam supplied with constant heat flux. Good agreement between experimental and numerical results has been found with a mean PCM local temperature deviation of 1.62K and 2.97K in two locations. The CFD simulation time was 56 hours for 6.5 hours of flow time. A computationally efficient resistance capacitance-based model (RCM) was developed to improve simulation speed. The proposed RCM exhibited mean local temperature deviations of 1.86K and 2.96K when compared against the experimental data for two thermocouple positions, however, it was approximately 2.5x10 5 times faster than CFD. The charging time deviation was less than 1% compared to CFD, and no significant change in thermal energy stored was observed since the temperature differences were small enough to result in insignificant sensible heat deviation. A simulation cost-effectiveness index (CEI) considering accuracy and computational affordability was introduced; the CEI of the RCM solver is 10 3 times better compared to CFD for the prediction of local PCM temperature.

25 ENERGY STORAGE↗
DOE OSTI2021

Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack

We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg 0.03 Zn 0.97 O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni 0.02 Mg 0.15 Zn 0.83 O (NMZO) serves as the ferroelectric layer in the NMZO/SiO 2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current ID reaches 10 9 .

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

A Bulk-Capacitance Reduction Method Using Self-Driven Thyristor for AC-DC Converters

Universal serial bus power delivery (USB-PD) fast chargers equipped with wide-bandgap devices are driven to higher power density and efficiency. Furthermore, the indispensable high-voltage bulk capacitors used to smooth the rectifier output could take 40% of the total system volume due to the large capacitance value required. This paper discussed a capacitor reduction method using a self-driven thyristor scheme comprised of only three components in total. No extra control circuit is needed. Circuit analysis and design equations are presented, and the design results are implemented in a 60-W GaN-based active-clamp flyback converter. The measurement results on the prototype show a 36.4% reduction of the bulk-capacitor size with similar efficiency compared to the conventional solution.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Output Capacitance Loss of GaN HEMTs in Steady-State Switching

The output capacitance (C OSS ) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C OSS loss in a single pulse and the steady-state switching. The C OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C OSS loss.1

42 ENGINEERING↗
DOE OSTI2023

Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies

Output capacitance (C OSS ) loss (E DISS ) is produced when the C OSS of a power device is charged and discharged, which ideally should be a lossless process. This loss was recently revealed to be a crucial concern for GaN high electron mobility transistors (HEMTs) in high-frequency soft-switching applications. Among various GaN devices, the composite-type, cascode GaN HEMT was reported to show the largest E DISS with a voltage dependence distinct from discrete GaN HEMTs. However, the physical origins of the EDISS in cascode GaN HEMTs remain unclear. This work fills this gap by identifying three loss components and, for the first time, experimentally quantifying them in the multi-MHz resonant switching. These loss components include a) the avalanche loss of Si MOSFET, b) the intrinsic E DISS of GaN HEMT, and c) the Si avalanche-induced GaN turn-ON loss. The last component was found to dominate E DISS at high voltage. By eliminating the Si avalanche and the associated loss components (a) and (c), the E DISS of cascode GaN HEMTs can be reduced by up to 75% at the price of an increase in output charge and switching transition time. Furthermore, these results provide new physical insights and practical guidelines to trim the soft-switching loss of cascode GaN HEMTs in high-frequency applications.

42 ENGINEERING↗
DOE OSTI2021

Solid-State Welding of the Nanostructured Ferritic Alloy 14YWT Using a Capacitive Discharge Resistance Welding Technique

Joining nanostructured ferritic alloys (NFAs) has proved challenging, as the nano-oxides that provide superior strength, creep resistance, and radiation tolerance at high temperatures tend to agglomerate, redistribute, and coarsen during conventional fusion welding. In this study, capacitive discharge resistance welding (CDRW)—a solid-state variant of resistance welding—was used to join end caps and thin-walled cladding tubes of the NFA 14YWT. The resulting solid-state joints were found to be hermetically sealed and were characterized across the weld region using electron microscopy (macroscopic, microscopic, and nanometer scales) and nanoindentation. Microstructural evolution near the weld line was limited to narrow (~50–200 μm) thermo-mechanically affected zones (TMAZs) and to a reduction in pre-existing component textures. Dispersoid populations (i.e., nano-oxides and larger oxide particles) appeared unchanged by all but the highest energy and power CDRW condition, with this extreme producing only minor nano-oxide coarsening (~2 nm → ~5 nm Ø). Despite a minimal microstructural change, the TMAZs were found to be ~10% softer than the surrounding base material. These findings are considered in terms of past solid-state welding (SSW) efforts—cladding applications and NFA-like materials in particular—and in terms of strengthening mechanisms in NFAs and the potential impacts of localized temperature–strain conditions during SSW.

36 MATERIALS SCIENCE↗
NASA NTRS2016

Thermal Vacuum Test Correlation of A Zero Propellant Load Case Thermal Capacitance Propellant Gauging Analytics Model

This thesis describes the development and test data validation of the thermal model that is the foundation of a thermal capacitance spacecraft propellant load estimator. Specific details of creating the thermal model for the diaphragm propellant tank used on NASA's Magnetospheric Multiscale spacecraft using ANSYS and the correlation process implemented to validate the model are presented. The thermal model was correlated to within plus or minus 3 degrees Centigrade of the thermal vacuum test data, and was found to be relatively insensitive to uncertainties in applied heat flux and mass knowledge of the tank. More work is needed, however, to refine the thermal model to further improve temperature predictions in the upper hemisphere of the propellant tank. Temperatures predictions in this portion were found to be 2-2.5 degrees Centigrade lower than the test data. A road map to apply the model to predict propellant loads on the actual MMS spacecraft toward its end of life in 2017-2018 is also presented.

Thermal↗
NASA NTRS2016

Thermal Vacuum Test Correlation of a Zero Propellant Load Case Thermal Capacitance Propellant Gauging Analytical Model

This thesis describes the development and correlation of a thermal model that forms the foundation of a thermal capacitance spacecraft propellant load estimator. Specific details of creating the thermal model for the diaphragm propellant tank used on NASA's Magnetospheric Multiscale spacecraft using ANSYS and the correlation process implemented are presented. The thermal model was correlated to within plus or minus 3 degrees Celsius of the thermal vacuum test data, and was determined sufficient to make future propellant predictions on MMS. The model was also found to be relatively sensitive to uncertainties in applied heat flux and mass knowledge of the tank. More work is needed to improve temperature predictions in the upper hemisphere of the propellant tank where predictions were found to be 2 to 2.5 C lower than the test data. A road map for applying the model to predict propellant loads on the actual MMS spacecraft toward its end of life in 2017-2018 is also presented.

Gauging↗
NASA NTRS2016

Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

Harsh environment↗