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Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results.
This paper reports recent single-event latchup results for a variety of microelectronic devices that include an ADC, OpAmp, EEPROM, CPLD, PWM, transceiver, voltage regulator, digital signal processor, step-down converter, buck controller and supervisory circuits. The data were collected to evaluate these devices for possible use in NASA ISS payloads.
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Single-event effects and total ionizing dose testing are described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results. Extraction of three-dimensional heavy-ion test data presents a unique visualization of angular effects in NAND flash. Pattern dependence differences between SLC and MLC mode are noted, along with slightly non-uniform angular cross-section results due to the complex volume. Finally, TID data under different operating and bias conditions shows that the failure point remains the higher-voltage erasure circuitry.
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The Free-Flying Magnetometer (FFM) is an autonomous spin-stabilized sensorcraft developed at the Jet Propulsion Laboratory (JPL) for the Enstrophy sounding rocket mission.
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