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Results for “crystalline defects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.

Natesh, R.↗
DOE OSTI2022

Post‐Annealing Treatment on Hydrothermally Grown Antimony Sulfoselenide Thin Films for Efficient Solar Cells

Herein, antimony sulfoselenide (Sb 2 (S, Se) 3 ) thin‐film solar cells are fabricated by a hydrothermal method followed by a post‐deposition annealing process at different temperatures and the impact of the annealing temperature on the morphological, structural, optoelectronic, and defect properties of the hydrothermally grown Sb 2 (S, Se) 3 films is investigated. It is found that a proper annealing temperature leads to high‐quality Sb 2 (S, Se) 3 films with large crystal grains, high crystallinity, preferred crystal orientation, smooth and uniform morphology, and reduced defect density. These results show that suppressing deep‐level defects is crucial to enhance solar cell performance. After optimizing the annealing process, Sb 2 (S, Se) 3 solar cells with an improved power conversion efficiency 2.04 to 8.48% are obtained.

14 SOLAR ENERGY↗
DOE OSTI2021

Ion irradiation induced strain and structural changes in LiTaO 3 perovskite

LiTaO 3 crystals irradiated with 3 MeV and 1.162 GeV Au ions were studied by single crystal x-ray diffraction and Raman scattering measurements. The maximum lattice strains after 3 MeV Au ion irradiation to a fluence of 1.2 × 10 13 cm -2 were 1.2% and 0.6% along the c- and a-/b-axes, respectively. Two effects were observed in 1.162 GeV Au ion irradiated samples: (i) the (0006) and (1120) Bragg peaks were split into doublets, which suggested a subtle structural change due to slight modification of chemical composition; and (ii) the pre-damaged 1.2% lattice strain along the c-axis was relaxed to 0.9% after subsequent irradiation with 1.162 GeV Au ions, while relaxation along the a- or b-axis was not obvious. A distinct change in the Raman spectrum of the <0001> oriented LiTaO 3 crystals was observed after 1.162 GeV Au ion irradiation, but no obvious change was observed in the <1120> oriented samples or in 3 MeV Au ion irradiated samples. Strain and structural changes in crystalline LiTaO3, with or without pre-existing defects, upon ion irradiation are delineated in its responding to inelastic ionization and elastic nuclear collisions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Topological photonic crystal fiber

Photonic crystal fibers (PCFs) provide a versatile platform for various applications, thanks to the flexibility with which light guiding can be customized by modifying the fiber geometry. We realize a PCF with guided modes produced by photonic band structure topology rather than conventional mode-trapping mechanisms. The design, which is compatible with the stack-and-draw fabrication process, consists of a cross-sectional photonic topological crystalline insulator with a disclination. A bulk-defect correspondence produces degenerate topological modes, lying below the cladding light line. We use various theoretical methods to confirm their topological origins, including a spectral localizer that makes minimal assumptions about the band structure. Our experiments on the fabricated fiber show it transmitting visible to near-infrared light with low losses of 10 to 20 decibels per kilometer, which do not increase substantially when the fiber is bent. A comparable solid-core PCF of conventional design exhibits substantially higher bending losses. Optical fibers based on topological modes hold promise for improved performance and versatile functionalities.

Zhu, Bofeng [Nanyang Technological Univ. (Singapor↗
NASA NTRS1998

Normalization of periodontal tissues in osteopetrotic mib mutant rats, treated with CSF-1

The osteopetrotic mib mutation in rats causes defects in the skeletal bone tissue in young animals. These defects, i.e. slow bone remodelling, changes in both crystallinity and mineral content, are transient and undergo normalization, even without any treatment in 6-wk-old animals. Treatment with CSF-1 (colony stimulating factor-1) accelerates the normalization process in skeletal bones. The periodontal tissues around the apices of incisors show abnormalities caused by the slow remodelling process of the mandible bone tissue, the deficiency of osteoclasts and their abnormal morphology, as well as the disorganization of periodontal ligament fibres. In contrast to the skeletal tissues, these abnormalities would not undergo spontaneous normalization. Under treatment with colony stimulating factor 1 (CSF-1), the primitive bone trabeculae of mandible are resorbed and the normalization of the number of osteoclasts and their cytology occurs. The organization of the periodontal ligament fibres is partially restored, resembling the histological structure of the normal one.

NASA Discipline Musculoskeletal↗
DOE OSTI2023

Nanoscale mapping of point defect concentrations with $\mathrm{4D-STEM}$

Vacancies are missing atoms in a crystalline material, and occur both at equilibrium (varying with temperature) and out of equilibrium such as when crystalline materials are damaged with radiation or corrosion. While we know of their importance, particularly regarding diffusive mechanisms, it is not straightforward to experimentally measure their concentration or to visualize them directly. Traditionally, measurements such as positron annihilation spectroscopy and to some degree X-ray diffraction can measure average concentrations, but generally lack the ability to visualize or quantify a heterogenous concentration of vacancies that can occur at the level of individual defects and microstructural features. Here, we present a method to map vacancy concentrations and their distribution using local lattice parameter measurements with a high-resolution electron microscope. Our method utilizes a Au thin film as a model to demonstrate the method via four-dimensional scanning transmission electron microscopy (4D-STEM) by correlating the differences between changes in lattice parameter and the volumetric thermal expansion during in situ heating experiments. The vacancy mapping methodology is also applied to non-equilibrium defects accumulated in pure Al via knock-on electron beam irradiation. Our method demonstrates the ability to map point defect concentrations in heterogeneous systems in situ with nanometer spatial resolution. The result is a technique that can provide direct measurements of vacancy concentrations at the level of individual defects in studies of materials in and out of equilibrium.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Detached Melt and Vapor Growth of InI in SUBSA hardware

Indium iodide (InI) single crystals, grown by the Bridgman process, have shown a significant promise as room temperature detector material for X-rays and γ-rays due to the large, close to ideal, bandgap of Eg = 2 eV, and high electrical resistivity. Yet the transport properties of the charge and the detector performance remain inadequate. The Bridgman growth of semiconductor crystals in microgravity have typically resulted in partial dewetting and Marangoni convection, which disturbed the diffusion-controlled growth and produced nonuniform dopant distribution. However, unconfined or partially confined solidification drastically reduced the number of stress-induced defects compared to the confined growth in crucibles on Earth.The goal of the present investigation was to explore melt growth of a heavy metal halide in microgravity, focusing on dewetting, in order to improve the crystalline perfection, i.e., to reduce the number of stress-related defects. InI was chosen because it is non-toxic and has a low melting point of only 365 C (~150 C below the melting point of InSb, used in the SUBSA experiments in 2002). Furthermore, InI melts and evaporates congruently, making it suitable for both growth by directional solidification and growth from the vapor phase. In preparation for the flight experiments, ground-based experiments were conducted in the SUBSA ground unit, consisting of 4 melt growth and 2 vapor growth experiments. The crystals were grown by a gradient freeze method by lowering the setpoint of the furnace. The transparent section of the SUBSA furnace did not allow observations of the solid-liquid interface. Contrary to our expectations, the possible occurrence of dewetting during growth could not be observed. We will present i) the ampoule design and preparation, ii) the experiments conducted in the SUBSA ground unit, iii) the images obtained during the microgravity experiments and iv) the results of the characterization of the grown crystals and detector fabrication.

Crystal Growth↗
DOE OSTI2022

Atomic-Layer-Deposited Aluminum Oxide Thin Films Probed with X-ray Scattering and Compared to Molecular Dynamics and Density Functional Theory Models

A better understanding of amorphous aluminum oxide’s structure and electronic properties is obtained through combined experimental and computational approaches. Grazing incidence X-ray scattering measurements were carried out on aluminum oxide thin films grown using thermal atomic layer deposition. The corresponding pair distribution functions (PDFs) showed structures similar to previously reported PDFs of solid-state amorphous alumina and molten alumina. Structural models based on crystalline alumina polymorphs (PDFgui) and amorphous alumina (molecular dynamics, MD) were examined for structural comparisons to the experimental PDF data. Smaller MD models were optimized and verified against larger models to allow for quantum chemical electronic structure calculations. The electronic structure of the amorphous alumina models yields additional insight into the band structure and electronic defects present in amorphous alumina that are not present in crystalline samples.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Microstructure and hardness evolution induced by annealing of ion irradiated LiTaO 3

We report the evolution of the microstructure and mechanical properties of low-energy heavy-ion-irradiated LiTaO 3 crystals annealed at various temperatures was investigated by transmission electron microscopy (TEM) observations and nanoindentation tests to extend the applications of irradiated LiTaO 3 crystals. Before annealing, randomly distributed voids formed in an approximately 200 nm thick region at the end of the ion irradiation range, which was attributed to preferential absorption of interstitials by the amorphous-crystalline interface. After annealing, a new directional diffusion path of defects was identified, resulting in a void string. Furthermore, void string diffusion to the free surface was also found during the annealing temperature increase process, which offers a potential application in designing custom sized-thickness exfoliation at the nanoscale. Meanwhile, two competing processes were identified during the annealing process: epitaxial recrystallization from the amorphous-crystalline interface and grain nucleation process in the amorphous region, which formed phases different from the matrix crystal structure, resulting in an interaction between them. Furthermore, the hardness of irradiated samples was also found to be affected by the annealing process; in particular, a hardness decrease induced by the interstitial Fe ions in the recrystallized region was also confirmed, which can improve the processability of samples for further application.

36 MATERIALS SCIENCE↗
DOE OSTI2022

In-situ TEM study of Kr ion irradiation tolerance of SiFeOC nanocomposite

Here, in this work, ion irradiation of polymer derived SiFeOC nanocomposite was carried out using 1.2 MeV Kr ions at room temperature and 600°C. The starting composite was composed of Fe 3 Si, SiC, SiOC, SiO 2 , and graphitic C. In-situ TEM investigations show uniform distribution of nano-crystalline Fe 3 Si and SiC phases in the amorphous SiOC matrix. During ion irradiation, the SiOC bulk microstructure and interfaces between Fe 3 Si or SiC crystallites and the SiOC matrix remain defect-free and demonstrate outstanding ion irradiation resistance. At room temperature, the crystalline domains are stable up to 2 dpa. At 600°C, Fe 3 Si crystallites are more stable than SiC; SiC crystallites are stable up to 4 dpa while the Fe 3 Si crystallites are stable up to 10 dpa. These crystallites also coalescence and amorphize simultaneously during ion irradiation. The exceptional tolerance to defect formation and irradiation of the SiFeOC nanocomposite provides important guidance to developing irradiation resistant fuels for advanced gas cooled reactors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The Convolutional Multiple Whole Profile (CMWP) Fitting Method, a Global Optimization Procedure for Microstructure Determination

The analysis of line broadening in X-ray and neutron diffraction patterns using profile functions constructed on the basis of well-established physical principles and TEM observations of lattice defects has proven to be a powerful tool for characterizing microstructures in crystalline materials. These principles are applied in the convolutional multiple-whole-profile (CMWP) procedure to determine dislocation densities, crystallite size, stacking fault and twin boundary densities, and intergranular strains. The different lattice defect contributions to line broadening are separated by considering the hkl dependence of strain anisotropy, planar defect broadening and peak shifts, and the defect dependent profile shapes. The Levenberg–Marquardt (LM) peak fitting procedure can be used successfully to determine crystal defect types and densities as long as the diffraction patterns are relatively simple. However, in more complicated cases like hexagonal materials or multiple-phase patterns, using the LM procedure alone may cause uncertainties. Here, we extended the CMWP procedure by including a Monte Carlo statistical method where the LM and a Monte Carlo algorithm were combined in an alternating manner. The updated CMWP procedure eliminated uncertainties and provided global optimized parameters of the microstructure in good correlation with electron microscopy methods.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A deep learning interatomic potential developed for atomistic simulation of carbon materials

Interatomic potentials based on neural-network machine learning method have attracted considerable attention in recent years owing to their outstanding ability to balance the accuracy and efficiency in atomistic simulations. In this work, a neural-network potential (NNP) for carbon is generated to simulate the structural properties of various carbon structures. The potential is trained using a database consisting of crystalline and liquid structures obtained by the first-principles density functional theory (DFT) calculations. The developed potential accurately predicts the energies and forces in crystalline and liquid carbon structures, the energetic stability of defected graphene, and the structures of amorphous carbon as the function of density. As a result, the excellent accuracy and transferability of the NNP provide a promising tool for accurate atomistic simulations of various carbon materials with faster speed and much lower cost.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Localized electronic and vibrational states in amorphous diamond

Amorphous diamond structures are generated by quenching high-density high-temperature liquid carbon using tight-binding molecular-dynamics simulations. We show that the generated amorphous diamond structures are predominated by strong tetrahedral bonds with the sp 3 bonding fraction as high as 97%, thus exhibit an ultra-high incompressibility and a wide band gap close to those of crystalline diamond. A small amount of sp 2 bonding defects in the amorphous sample contributes to localized electronic states in the band gap while large local strain gives rise to localization of vibrational modes at both high and low frequency regimes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Epitaxially Grown Single-Crystalline SrTiO 3 Membranes Using a Solution-Processed, Amorphous SrCa 2 Al 2 O 6 Sacrificial Layer

Water-soluble sacrificial layers based on epitaxially-grown, single crystalline (Ca, Sr, Ba) 3 Al 2 O 6 layer are widely used for creating free-standing perovskite oxide membranes. However, obtaining these sacrificial layers with intricate stoichiometry remains a challenge, especially for molecular beam epitaxy (MBE). In this study, we demonstrate the hybrid MBE growth of epitaxial, single crystalline SrTiO 3 films using a solution processed, amorphous SrCa 2 Al 2 O 6 sacrificial layer onto SrTiO 3 (001) substrates. Prior to the growth, the oxygen plasma exposure was used to first create the crystalline SrCa 2 Al 2 O 6 layer with well-defined surface crystallinity. Utilizing reflection high energy electron diffraction, x-ray diffraction, and atomic force microscopy, we observe an atomic layer-by-layer growth of epitaxial, single crystalline SrTiO 3 film on the SrCa 2 Al 2 O 6 layer with atomically smooth surfaces. The SrCa 2 Al 2 O6 layer was subsequently dissolved in de-ionized water to create free-standing SrTiO3 membranes that were transferred onto a metal-coated Si wafer. Membranes created with Sr-deficiency revealed ferroelectric-like behavior measured using piezo force microscopy whereas stoichiometric films remained paraelectric-like. Furthermore, these findings underscore the viability of using ex-situ deposited amorphous SrCa2Al2O6 for epitaxial, single crystalline growth, as well as the importance of point defects in determining the ferroic properties in membranes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Dielectrics Under Extreme Electric Fields: In Situ Studies on Nanoscale Mechanisms (Final Technical Report)

The lack of materials that can function reliably under extreme electric fields is a critical roadblock to achieving higher energy efficiency and extended service lifetime of devices in electricity generation, transmission, and consumption. Materials typically fail at two or three orders of magnitude below their theoretical dielectric breakdown strength. Identifying the origins of premature dielectric breakdown using state-of-the-art characterization tools will, therefore, enable the design and discovery of transformational materials capable of approaching their intrinsic limits. The vast improvement in the resolution power of imaging tools, combined with the recently developed in situ electric biasing technique, has made high resolution observations of dielectric breakdown as it happens possible. The overall goal of the project is to directly image the dynamic processes of defect formation, accumulation, and interaction with preexisting defects (e.g., dislocations, domain walls, and grain boundaries in crystalline dielectric films) under electric fields up to 1,000 MV/m with a temporal resolution better than 5 microseconds. Using the newly acquired, custom-made Hysitron PI95 transmission electron microscopy (TEM) specimen holder, in situ TEM observations of breakdown at the sub nanometer resolution will be made on representative dielectric compounds with progressive complexities: the linear dielectric SiO 2 , CuO, and TiO 2 , the ferroelectric BaTiO 3 nanocrystals and nanocubes. Through direct observation of the breakdown event at high spatial and temporal resolutions, the nanoscale mechanisms for the failure of dielectrics under intense electric fields will be identified. The results of the project will be applied to the design and processing of new dielectric materials with higher efficiency, improved reliability, and a prolonged lifetime. Such new dielectrics are urgently needed for modernizing energy infrastructures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1994

Cubic GaS: A Surface Passivator For GaAs

Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

Hepp, Aloysius F.↗