SEARCH · Search NASA

Results for “crystalline silicon”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11

All sources NASA NTRS DOE OSTI

NASA NTRS1986

Project analysis and integration economic analyses summary

An economic-analysis summary was presented for the manufacture of crystalline-silicon modules involving silicon ingot/sheet, growth, slicing, cell manufacture, and module assembly. Economic analyses provided: useful quantitative aspects for complex decision-making to the Flat-plate Solar Array (FSA) Project; yardsticks for design and performance to industry; and demonstration of how to evaluate and understand the worth of research and development both to JPL and other government agencies and programs. It was concluded that future research and development funds for photovoltaics must be provided by the Federal Government because the solar industry today does not reap enough profits from its present-day sales of photovoltaic equipment.

Macomber, H. L.↗

NASA NTRS1986

Long-term module testing at Wyle Laboratories

Results are presented for a current set of accelerated long-term endurance tests on crystalline silicon module of various constructions. Cell materials include single crystal, semicrystal, EFG ribbon, and dendritic web ribbon. The latest data set is for the equivalent of 20-year life and showed satisfactory performance.

Otth, D. H.↗

NASA NTRS1986

Commerical module test program

The results are presented for a program of qualification testing of commercial crystalline silicon modules from nine manufacturers in five countries. The outcome demonstrated the effective role of the Block 5 Qualification Tests in the development of reliable modules.

Smokier, M. I.↗

NASA NTRS1986

High-efficiency module design

Success was reported in meeting the long-sought goal of manufacturing a crystalline silicon module with efficiency of 15% or better. Encapsulated cell efficiencies as high as 17.6% were obtained.

Spitzer, M. B.↗

NASA NTRS1986

Anticorrosion studies

The aging behavior of chemically bonded interfaces between metals and pottants, such as ethylene vinyl acetate (EVA) was studied using the Dow Corning primer systems. It was observed that the primers seem to function as anticorrosive agents on metal surfaces. It was demonstrated that EVA, and the A-11861 EVA/glass primer stops corrosion of the aluminum used on the back surfaces of crystalline silicon solar cells. However, this same treatment does not work for the aluminum on the back surfaces of amorphous silicon solar cells.

Boerio, J.↗

NASA NTRS1986

Flat-plate solar array project. Volume 4: High-efficiency solar cells

The High Efficiency Solar Cell Task was assigned the objective of understanding and developing high efficiency solar cell devices that would meet the cost and performance goals of the Flat Plate Solar Array (FSA) Project. The need for research dealing with high efficiency devices was considered important because of the role efficiency plays in reducing price per watt of generated energy. The R&D efforts conducted during the 1982 to 1986 period are summarized to provide understanding and control of energy conversion losses associated with crystalline silicon solar cells. New levels of conversion efficiency were demonstrated. Major contributions were made both to the understanding and reduction of bulk and surface losses in solar cells. For example, oxides, nitrides, and polysilicon were all shown to be potentially useful surface passivants. Improvements in measurement techniques were made and Auger coefficients and spectral absorption data were obtained for unique types of silicon sheets. New modelling software was developed including a program to optimize a device design based on input characteristics of a cell.

Leipold, M.↗

NASA NTRS1985

Air mass 1.5 global and direct solar simulation and secondary reference cell calibration using a filtered large area pulsed solar simulator

Spectral mismatch between a solar simulator and a desired spectrum can result in nearly 20 percent measurement error in the output of photovoltaic devices. This occurs when a crystalline silicon cell monitors the intensity of an unfiltered large area pulsed solar simulator (LAPSS) simulating the ASTM air mass 1.5 direct spectrum and the test device is amorphous silicon. The LAPSS spectral irradiance is modified with readily available glass UV filters to closely match either the ASTM air mass 1.5 direct or global spectrum. Measurement error is reduced to about 1 percent when using either filter if the reference cell and test device are the same general type.

Mueller, Robert L.↗

NASA NTRS1987

Acoustic radiation-induced static strains in solids

The controversy surrounding the magnitude of the radiation-induced static strain accompanying acoustic wave propagation in solids is resolved by a consideration of the associated Boussinesq radiation stress. Experimental verification of the results is presented for waves propagating along the pure mode directions of crystalline silicon.

Cantrell, John H.↗

NASA NTRS1985

Electricity from photovoltaic solar cells. Flat-Plate Solar Array Project of the US Department of Energy's National Photovoltaics Program: 10 years of progress

The objectives were to develop the flat-plate photovoltaic (PV) array technologies required for large-scale terrestrial use late in the 1980s and in the 1990s; advance crystalline silicon PV technologies; develop the technologies required to convert thin-film PV research results into viable module and array technology; and to stimulate transfer of knowledge of advanced PV materials, solar cells, modules, and arrays to the PV community. Progress reached on attaining these goals, along with future recommendations are discussed.

Christensen, Elmer↗

NASA NTRS1989

Integrated-Circuit Broadband Infrared Sources

Microscopic devices consume less power, run hotter, and are more reliable. Simple, compact, lightweight, rapidly-responding reference sources of broadband infrared radiation made available by integrated-circuit technology. Intended primarily for use in calibration of remote-sensing infrared instruments, devices eventually replace conventional infrared sources. New devices also replace present generation of miniature infrared sources. Self-passivating nature of poly-crystalline silicon adds to reliability of devices. Maximum operating temperature is 1,000 K, and power dissipation is only one-fourth that of prior devices.

Lamb, G.↗

NASA NTRS1988

Water-module interaction studies

Mechanisms by which moisture enters photovoltaic modules and techniques for reducing such interactions are reported. Results from a study of the effectiveness of various module sealants are given. Techniques for measuring the rate and quantity of moisture ingress are discussed. It is shown that scribe lines and porous frit bridging conductors provide preferential paths for moisture ingress and that moisture diffusion by surface/interfacial paths is considerably more rapid than diffusion by bulk paths, which implies that thin-film substrate and supersubstrate modules are much more vulnerable to moist environments than are bulk-encapsulated crystalline-silicon modules. Design approaches that reduce moisture entry are discussed.

Mon, G.↗

NASA NTRS1993

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Ksendzov, A.↗

NASA NTRS1995

Liquid metal micro heat pipes for space radiator applications

Micromachining is a chemical means of etching three-dimensional structures, typically in single-crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (micro electro mechanical systems), where in addition to the ordinary two dimensional (planar) microelectronics, it is possible to build three-dimensional micromotors, electrically-actuated microvalves, hydraulic systems, and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor microfabrication. The University of Cincinnati group in collaboration with NASA Lewis formed micro heat pipes in silicon by the above techniques. Work is ongoing at a modest level, but several essential bonding and packaging techniques have been recently developed. Currently, we have constructed and filled water/silicon micro heat pipes. Preliminary thermal tests of arrays of 125 micro heat pipes etched in a 1 inch x 1 inch x 250 micron silicon wafer have been completed. These pipes are instrumented with extremely small P-N junctions to measure their effective conductivity and their maximum operating power. A relatively simple one-dimensional model has been developed in order to predict micro heat pipes' operating characteristics. This information can be used to optimize micro heat pipe design with respect to length, hydraulic diameter, and number of pipes. Work is progressing on the fabrication of liquid-metal micro heat pipes. In order to be compatible with liquid metal (sodium or potassium), the inside of the micro heat pipes will be coated with a refractory metal (such as tungsten, molybdenum, or titanium).

Gerner, F. M.↗

NASA NTRS2006

Gap/silicon Tandem Solar Cell with Extended Temperature Range

A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

Landis, Geoffrey A.↗

NASA NTRS1987

Edge passivated charge-coupled device image sensor

A charge-coupled device (CCD) image sensor includes in a substrate of single crystalline silicon of one conductivity type an array of a plurality of spaced, parallel channel regions of the opposite conductivity type extending along one major surface of the substrate. A plurality of parallel conductive gates are over the one major surface of the substrate and extend transversely across the channel regions. The outermost channel regions of the array are positioned adjacent edges of the substrate so that a plurality of the image sensors can be mounted in edge-to-edge relation with the channel regions of the various sensors being close together. The sensor includes passivating means between each outermost channel region and the adjacent edge to prevent charge carriers generated by the edge from being injected into the outermost channel region. The passivating means includes a highly conductive drain region of a conductivity type opposite to that of the substrate within the substrate and extending along the one major surface between the outermost channel region and the edge. Also, a highly conductive region of the same conductivity type as the substrate is on the substrate and extends along the one major surface directly at the edge.

Kosonocky, Walter F.↗

NASA NTRS2012

Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

Kim, Hyun Jung↗

NASA NTRS2013

Microwave Kinetic Inductance Detector with Selective Polarization Coupling

A conventional low-noise detector requires a technique to both absorb incident power and convert it to an electrical signal at cryogenic temperatures. This innovation combines low-noise detector and readout functionality into one device while maintaining high absorption, controlled polarization sensitivity, and broadband detection capability. The resulting far-infrared detectors can be read out with a simple approach, which is compact and minimizes thermal loading. The proposed microwave kinetic inductance detector (MKID) consists of three basic elements. The first is the absorptive section in which the incident power is coupled to a superconducting resonator at far-infrared frequency above its superconducting critical frequency (where superconductor becomes normal conductor). This absorber's shape effectively absorbs signals in the desired polarization state and is resonant at the radio frequency (RF) used for readout of the device. Control over the metal film used in the absorber allows realization of structures with either a 50% broadband or 100% resonance absorptance over a 30% fractional bandwidth. The second element is a microwave resonator - which is realized from the thin metal films used to make the absorber as transmission lines - whose resonance frequency changes due to a variation in its kinetic inductance. The resonator's kinetic inductance is a function of the power absorbed by the device. A low-loss dielectric (mono-crystalline silicon) is used in a parallel-plate transmission line structure to realize the desired superconducting resonators. There is negligible coupling among the adjacent elements used to define the polarization sensitivity of each detector. The final component of the device is a microwave transmission line, which is coupled to the resonator, and allows detection of changes in resonance frequency for each detector in the focal plane array. The spiral shape of the detector's absorber allows incident power with two polarizations to couple to the detector equally. A stepped impedance resonator was used that allows the incident power absorbed in the detecting membrane area to be uniformly distributed in the detector's transmission line at the RF readout frequency. This maximizes the sensitivity of the detector. The signal is read out via a frequency multiplexing technique that requires a minimum number of interface transmission lines for readout. This reduces the packaging complexity and coupling to the device's thermal environment.

Wollack, Edward↗

NASA NTRS2014

A Novel Instrument and Methodology for the In-Situ Measurement of the Stress in Thin Films

We introduce a novel methodology for the in-situ measurement of mechanical stress during thin film growth utilizing a highly sensitive non-contact variation of the classic spherometer. By exploiting the known spherical deformation of the substrate the value of the stress induced curvature is inferred by measurement of only one point on the substrate's surface-the sagittal. From the known curvature the stress can be calculated using the well-known Stoney equation. Based on this methodology, a stress sensor has been designed which is simple, highly sensitive, compact, and low cost. As a result of its compact nature, the sensor can be mounted in any orientation to accommodate a given deposition geometry without the need for extensive modification to an already existing deposition system. The technique employs the use of a double side polished substrate that offers good specular reflectivity and is isotropic in its mechanical properties, such as <111> oriented crystalline silicon or amorphous soda lime glass, for example. The measurement of the displacement of the uncoated side during deposition is performed with a high resolution (i.e. 5nm), commercially available, inexpensive, fiber optic sensor which can be used in both high vacuum and high temperature environments (i.e. 10(exp-7) Torr and 480oC, respectively). A key attribute of this instrument lies in its potential to achieve sensitivity that rivals other measurement techniques such as the micro cantilever method but, due to the comparatively larger substrate area, offers a more robust and practical alternative for subsequent measurement of additional characteristics of the film that can might be correlated to film stress. We present measurement results of nickel films deposited by magnetron sputtering which show good qualitative agreement to the know behavior of polycrystalline films previously reported by Hoffman.

Broadway, David M.↗