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At least 199 records · Page 11

Epitaxial Design of Complex Nickelates as Electrocatalysts for the Oxygen Evolution Reaction

Abstract The oxygen evolution reaction (OER) is a crucial process in electrochemical water splitting, a promising technology to renewably yield hydrogen gas from water. Designing and developing earth‐abundant, efficient, and stable OER electrocatalysts to replace the most widely used but scarce RuO 2 and IrO 2 are thus of critical interest. Recently, ABO 3 ‐structured perovskite oxides, especially rare‐earth nickelates, are extensively studied for their potential use as OER electrocatalysts. In particular, the epitaxial synthesis of complex oxide thin films allows flexible and precise control over the materials so that their structure–stability–property relationships can be established. Using nickelate thin films as model systems, this review illustrates how epitaxial design allows researchers to test different hypotheses and proposed descriptors, as well as formulate new design principles. Following a brief introduction to the background of OER mechanisms, proposed activity descriptors, and synthesis methods, various epitaxial design strategies are surveyed including strain tuning, composition control, surface termination/orientation selection, defect engineering, and interface design. These have led to precise control over the atomic structures and electronic properties of nickelates which in turn determine their electrochemical performance. Finally, the remaining challenges and perspectives toward a deeper understanding and use of complex oxides as OER catalysts are discussed.

Choi, Min‐Ju↗

High Throughput In-Line Coating Metrology Development for Solid Oxide Fuel Cell Manufacturing

Coatings play key roles in solid oxide fuel cell (SOFC) stack durability. For example, diffusion barrier coatings on Cr-containing interconnect and balance of plant (BOP) components protect electrodes from Cr poisoning over the long operational lifetimes (>10,000 hours) of the fuel cell stack. Common defects in coatings, such as cracks, pinholes, and porosity, result in a failure to protect the electrodes, resulting in shorter operational lifetime and thus higher cost. It is very unlikely, even in the best coating process, that all these defects can be mitigated, hence identifying critical defects in parts, and removing defective parts from production before they can damage the stack, becomes paramount. Furthermore, these quality control techniques must be operational in the production/assembly line (in-line), i.e., high throughput and non-destructive, and cost effective. Redox Power Systems, LLC (Redox) together with the National Renewable Energy Laboratory (NREL) developed much needed high throughput, in-line metrology techniques for protective coatings. The overall goal of the project is to lower cost while increasing robustness, reliability, and endurance of SOFC stacks. To accomplish this, we had several objectives, including: to identify key coating and substrate defects that lead to coating failure through the use of detailed characterization methods (e.g., microscopy, XRD, EDS, electrochemistry); to assess capabilities of in-line metrology techniques, e.g., optical profilometry (Redox) and thermography (NREL), to probe these defects, or evidence thereof; demonstrate long-term performance of “defect-free” protective coatings, as identified by in-line metrology, in solid oxide fuel cell (SOFC) stack operation. In the first part of this project, the ability to identify key defects expected to lead to coating and SOFC degradation using in-line metrology tools were evaluated. Coated interconnect samples with controlled defect types and populations were tested under conditions similar to SOFC operation, followed by detailed post-test analysis to reveal the defects responsible for observed degradation. In the second part of the project, the optimal in-line metrology techniques and methodologies were used to map the defect distribution in full-size interconnects with critical defects intentionally allowed to exist in some cases. These interconnects underwent SOFC testing for extended periods (up to ~3,000 hours) followed by post-test analysis to evaluate the effectiveness of in-line metrology techniques in mitigating MCO coating related degradation. Key accomplishments in this project included the following: Demonstrated ASR of < 0.05 ohm-cm 2 at 650 °C for 1,000 hours with low defect (determined by in-line metrology) interconnect samples (average ASR=37 milliohms-cm 2 after over 1,000 hours). Demonstrated that low defect coatings on interconnects (as screened using in-line metrology) have low volatilization of chromium at ~650 °C for 1,000 hours as detected using Cr-getter material (< 5 at% increase above baseline); 1022 hour duration tests under humidified, elevated temperature (750 °C rather than 650 °C) compared a base case against different coating thicknesses. Demonstrated capability to identify initial key defects of interest with in-line metrology techniques using up to 8 cm by 10 cm having coatings with and without intentional defects of interest using thermal imaging and optical profilometry. Correlated key defects identified using metrology techniques with observed coating performance (e.g., ASR and Cr volatility). Conducted several 4 cm by 4 cm cell tests using MCO-interconnects that were pre-screened using some of the metrology techniques developed in the project (e.g., optical profilometry). An analysis of ASR measurements were able to show that defect-free coatings resulted in the anticipated performance in the cell tests.

01 COAL, LIGNITE, AND PEAT↗

Structural properties and recrystallization effects in ion beam modified B20-type FeGe films

Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions—nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion–antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating the development of methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. In particular, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au 4+ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from ~150 to 250°C. Finally, we describe the crystallization kinetics using the Johnson–Mehl–Avrami–Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate.

36 MATERIALS SCIENCE↗

Bearing defect signature analysis using advanced nonlinear signal analysis in a controlled environment

Utilizing high-frequency data from a highly instrumented rotor assembly, seeded bearing defect signatures are characterized using both conventional linear approaches, such as power spectral density analysis, and recently developed nonlinear techniques such as bicoherence analysis. Traditional low-frequency (less than 20 kHz) analysis and high-frequency envelope analysis of both accelerometer and acoustic emission data are used to recover characteristic bearing distress information buried deeply in acquired data. The successful coupling of newly developed nonlinear signal analysis with recovered wideband envelope data from accelerometers and acoustic emission sensors is the innovative focus of this research.

Zoladz, T.↗

Ammonolysis Under NH 3 –Limiting Conditions as a Pathway to Improved LaTiO 2 N Water Splitting Photoanodes

LaTiO 2 N is a promising intermediate band gap semiconductor for the water splitting reaction, a pathway to hydrogen fuel from solar energy. However, the photoelectrochemical (PEC) activity of the material is hindered by defects, particularly Ti(III) species, which promote photocarrier recombination. These defects are formed during the high-temperature ammonolysis reaction. Here we show that improved LaTiO 2 N materials can be synthesized under NH 3 -limiting conditions by introducing N 2 to lower the NH 3 partial pressure to0.13atm.This reduces the Ti(III) defect density in the material from 6.06 × 10 16 to ∼4.61 × 10 15 cm −3 , by a factor of 13, based on electron paramagnetic resonance (EPR) spectroscopy. Any remaining Ti(III) defects are localized at the LaTiO 2 N surface, according to X-ray photoelectron spectroscopy (XPS), due to the formation of a depletion layer in the semico. Optical absorption spectra of the improved LaTiO 2 N reveal a blue-shifted band gap absorption edge and a suppressed sub-band gap absorption. Defect removal also reduces a sub-band gap surface photovoltage feature visible in the 1.0 atm reference material. The improved LaTiO 2 N supports a 1.57 mA cm −2 water oxidation photocurrent at 1.23 V RHE under simulated sunlight conditions, and an enhanced quantum efficiency of 4.5% (400 nm) for photocatalytic oxygen evolution from aqueous silver nitrate solution. Stable PEC operation is observed for over 55 min. This confirms that ammonolysis under NH 3 -limiting conditions improves the solar energy conversion properties of LaTiO 2 N. The ability to control metal ion defects in oxynitrides by varying the ammonia partial pressure during ammonolysis might be generally useful for the preparation of metal nitrides and oxynitrides.

defects↗

Fundamentals of Defect-Free III-V Growth on Oxide-Nanopatterned GaAs Substrates

This talk describes the fundamentals underlying defect-free growth of large-area III-V devices on oxide-nanopatterned GaAs substrates, and applies them to the growth of 24.8% efficient GaAs solar cells with a dislocation density less than 5 x 10^5 cm^-2. In this application the nanopatterned oxide layer serves as a mechanically-weak layer for substrate separation and reuse, but in other applications it could serve as an optical element to diffract or redirect light. This presentation focuses on how the topology and dimensions of the oxide mask must be controlled to avoid defect formation wherever the epilayer coalesces over a mask feature.

ENGINEERING,SOLAR ENERGY↗

Establishing defect-property relationships for 2D-nanomaterials (Final technical report)

Studies of new families of two-dimensional nanomaterials (2DNMs) have established that they possess unique properties that diverge from those of their bulk counterparts. This project aimed to determine how tolerant 2DNMs are to extreme photon and particle fluxes and to identify the mechanisms governing their radiation response. Early work indicated that graphene is not as representative of other 2DNMs as previously assumed; however, the origin of this difference remained unclear. To address these knowledge gaps, this project investigated the physical processes occurring at multiple length scales in transition metal dichalcogenides (TMDs) and quantified their structural stability and property evolution under far-from-equilibrium conditions. In-situ and ex-situ ion and electron irradiations were performed to directly control and monitor defect formation in TMDs. Complementary density functional theory (DFT) and molecular dynamics (MD) simulations were employed to elucidate the mechanisms of defect generation and evolution. The outcomes of this work established mechanistic understanding of irradiation-induced defect formation in 2DNMs, quantified the radiation tolerance of TMDs, and built a fundamental knowledge base for correlating defect structures with material properties. Collectively, these results provide new insights into the stability of low-dimensional materials in extreme environments and enable the predictive design of radiation-tolerant 2DNMs.

2D materials↗

Microstructural Engineering of Cu-Rich Nanoprecipitate formation in NiCoFeCrCu0.12 High-Entropy Alloy via Severe Plastic Deformation for Enhanced Irradiation Tolerance

This study demonstrates a defect-engineering approach for controlling Cu-rich precipitates in FeNiCrCoCu0.2 high-entropy alloys (Cu-HEAs), delivering a novel pathway for next-generation nuclear reactor materials with superior irradiation resistance. This work establishes that severe plastic deformation (SPD) processing via Shear Assisted Processing and Extrusion (ShAPE) and Friction Stir Layer Deposition (FSLD) creates dense dislocation networks and subgrain boundaries that fundamentally alter precipitation behavior under identical thermal treatments. Atom probe tomography (APT) indicates that SPD produces a metastable, atomically homogeneous solid solution that, upon moderate heat treatment (500°C/10 hour), develops remarkedly stronger Cu clustering than the as-cast counterpart. High-temperature exposure (800°C/100 h) produces near-pure Cu precipitates (~90 at% Cu) with significantly enhanced defect-sink efficacy in SPD-processed alloys: precipitate sizes of 50-60 nm and number densities of 2.7-3.8 × 10¹7 m?³, compared to 89 nm and 0.44 × 10¹7 m?³ in as-cast materials. Collectively, the findings establish defect-mediated precipitation control as a scalable, high-impact route to tailor sink density and distribution in HEAs, enabling microstructures optimized for irradiation tolerance and mechanical robustness in nuclear reactor environments.

Meher, Subhashish↗

Mesoscopic theory of defect ordering–disordering transitions in thin oxide films

Abstract Ordering of mobile defects in functional materials can give rise to fundamentally new phases possessing ferroic and multiferroic functionalities. Here we develop the Landau theory for strain induced ordering of defects (e.g. oxygen vacancies) in thin oxide films, considering both the ordering and wavelength of possible instabilities. Using derived analytical expressions for the energies of various defect-ordered states, we calculated and analyzed phase diagrams dependence on the film-substrate mismatch strain, concentration of defects, and Vegard coefficients. Obtained results open possibilities to create and control superstructures of ordered defects in thin oxide films by selecting the appropriate substrate and defect concentration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Computationally guided experimental validation of divacancy defect formation in 4H-SiC

Recent research into solid-state qubits for quantum information science has focused on optically addressable spin defects such as the negatively charged nitrogen-vacancy center in diamond and the neutrally charged divacancy (VV) in 4H-SiC as scalable quantum sensors and networking qubits. Within this context, direct investigations of the structural origin and defect formation dynamics of a sub-set of the VV center in 4H-SiC remain lacking. Here, we take a systematic experimental approach guided by predictions from first-principles simulations to gain a thorough mechanistic understanding of the VV defect formation and control in 4H-SiC. We study the effect of annealing time and temperature on VV formation in high-purity semi-insulating 4H-SiC samples following electron irradiation. Three different temperatures (1123, 1273, and 1473 K) and annealing duration (from 0.5 to 72 h) are chosen to explore VV formation in different regions. We find that samples annealed at 1273 K give the highest VV-related photoluminescence (PL) intensities, in agreement with the prediction from first-principles calculations. Furthermore, the logarithmic dependence of VV-related PL intensities on the annealing duration at 1273 K indicates that 1273 K provides sufficient thermal energy for silicon vacancy migration but not for VV migration. Together, these results suggest that efficient VV formation occurs above the V Si migration temperature and below the VV migration threshold.

74 ATOMIC AND MOLECULAR PHYSICS↗

Precipitation hardening of laser powder bed fusion Ti-6Al-4V

Here, the laser powder bed fusion (PBF-L) additive manufacturing (AM) community has dedicated significant efforts into process optimization and control for defect-free Ti-6Al-4V. As defects become less of an issue for PBF-L Ti-6Al-4V, the processing-structure-properties (PSP) relationships between AM microstructures can now be explored to optimize mechanical properties. Lower temperature aging treatments around 550 °C in wrought Ti-6A-4V have been historically understood to precipitation harden the α phase with an ordered, hexagonal close packed (HCP) α 2 phase. The α 2 phase existed as nanoscale Ti 3 Al precipitates coherent with the parent α phase. The goal of the present investigation was to implement a vacuum heat treatment of 545 °C for 100 hours on PBF-L Ti-6Al-4V. This vacuum heat treatment took place after an initial hot isostatic pressure (HIP) treatment that decomposed the as-built, martensitic microstructure. The vacuum aging successfully produced nanoscale precipitates of α 2 phase within α-laths, confirmed via atom probe tomography (APT). Microstructural-length scale and quasi-static mechanical properties were investigated by nanoindentation and uniaxial tensile tests of miniaturized test specimens. Given the sensitivity of Ti-6Al-4V mechanical properties to small changes in chemistry, all test specimens originated from the same build. The α 2 precipitation resulted in significantly harder α-laths (≈ 2 GPa) as measured via nanoindentation, as well as a relative yield and ultimate tensile strength increase of 60 MPa and 38 MPa, respectively. Analysis of Variance (ANOVA) of the datasets revealed no statistical differences in total elongation between the HIPed and HIPed + aged specimens, indicative of the aging treatment producing a net benefit of strength with no loss in ductility.

36 MATERIALS SCIENCE↗

Double-Crucible Vertical Bridgman Technique for Stoichiometry-Controlled Chalcogenide Crystal Growth

Precise stoichiometry control in single-crystal growth is essential for both technological applications and fundamental research. However, conventional growth methods often face challenges such as non-stoichiometry, compositional gradients, and phase impurities, particularly in non-congruent melting systems. Even in congruent melting systems like Bi₂Se₃, deviations from the ideal stoichiometric composition can lead to significant property degradation, such as excessive bulk conductivity, which limits its topological applications. In this study, we introduce the double-crucible vertical Bridgman (DCVB) method, a novel approach that enhances stoichiometry control through the combined use of continuous source material feeding, traveling-solvent growth, and liquid encapsulation, which suppresses volatile element loss under high pressure. Using Bi₂Se₃ as a model system, we demonstrate that crystals grown via DCVB exhibit enhanced stoichiometric control, significantly reducing defect density and achieving much lower carrier concentrations compared to those produced by conventional Bridgman techniques. Moreover, the continuous feeding of source material enables the growth of large crystals. As a result, this approach presents a promising strategy for synthesizing high-quality, large-scale crystals, particularly for metal chalcogenides and pnictides that exhibit challenging non-congruent melting behaviors.

Crystal structure↗

Direct Imaging of the Structural and Morphological Evolution of Epitaxial LiCoO 2 Films during Charge and Overcharge

The capacity decay of layered cathodes in high-voltage applications underscores the need to utilize accurate and precise techniques to understand the underlying mechanisms. Here, we use well-defined epitaxial LiCoO 2 (LCO) films on SrRuO 3 /SrTiO 3 (SRO/STO) with controlled orientations and defect structures along with in situ electrochemical atomic force microscopy to probe the structural and morphological evolutions during the charge and overcharge processes. We quantitatively show the morphological changes in both the reversible delithiation regime and the irreversible over-delithiation regime and correlate the overall electrochemical behaviors to atomic scale defect evolutions in the films. Further, we also observe a significantly lower charging capacity for LCO/SRO/STO(111) compared to that of LCO/SRO/STO(001) films of the same thickness, which is ascribed to different types of atomic scale defects formed during the film growth process. Our high- resolution scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) studies reveal that the antiphase boundaries in LCO/SRO/STO(111) act as viable channels for Li migration but are more susceptible to irreversible phase transitions, which then block subsequent Li diffusion. The failure mechanisms developed here may provide insight into the design of future cathode materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Twin-Domain Formation in Epitaxial Triangular Lattice Delafossites

Twin domains are often found as structural defects in symmetry mismatched epitaxial thin films. The delafossite ABO 2 , which has a rhombohedral structure, is a good example that often forms twin domains. Although bulk metallic delafossites are known to be the most conducting oxides, high conductivity is yet to be realized in thin film forms. Suppressed conductivity found in thin films is mainly caused by the formation of twin domains, and their boundaries can be a source of scattering centers for charge carriers. To overcome this challenge, the underlying mechanism for their formation must be understood so that such defects can be controlled and eliminated. Here, we report the origin of structural twins formed in a CuCrO 2 delafossite thin film on a substrate with hexagonal or triangular symmetries. A robust heteroepitaxial relationship is found for the delafossite film with the substrate, and the surface termination turns out to be critical to determine and control the domain structure of epitaxial delafossites. Based on such discoveries, we also demonstrate twin-free epitaxial thin films grown on high-miscut substrates. Finally, this finding provides an important synthesis strategy for growing single-domain delafossite thin films and can be applied to other delafossites for the epitaxial synthesis of high-quality thin films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Comprehensive view of microscopic interactions between DNA-coated colloids

Abstract The self-assembly of DNA-coated colloids into highly-ordered structures offers great promise for advanced optical materials. However, control of disorder, defects, melting, and crystal growth is hindered by the lack of a microscopic understanding of DNA-mediated colloidal interactions. Here we use total internal reflection microscopy to measure in situ the interaction potential between DNA-coated colloids with nanometer resolution and the macroscopic melting behavior. The range and strength of the interaction are measured and linked to key material design parameters, including DNA sequence, polymer length, grafting density, and complementary fraction. We present a first-principles model that screens and combines existing theories into one coherent framework and quantitatively reproduces our experimental data without fitting parameters over a wide range of DNA ligand designs. Our theory identifies a subtle competition between DNA binding and steric repulsion and accurately predicts adhesion and melting at a molecular level. Combining experimental and theoretical results, our work provides a quantitative and predictive approach for guiding material design with DNA-nanotechnology and can be further extended to a diversity of colloidal and biological systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

3D oxygen vacancy distribution and defect-property relations in an oxide heterostructure

Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO 3 ) n /(SrTiO 3 ) n superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO 3 ) 9 /(LuFe 2 O 4 ) 1 superlattices, mapping correlations between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10 14 cm -2 , congruent with the formula-unit-thick ferrimagnetic LuFe 2 O 4 layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO 3 and LuFe 2 O 4 layers, respectively. The results demonstrate pronounced interactions between oxygen vacancies and the multiferroic order in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures.

36 MATERIALS SCIENCE↗

Direct link between disorder and magnetoresistance in topological semimetals

The extent to which disorder influences the properties of topological semimetals is relevant to the understanding of topological states and their use in practical applications. Using molecular beam epitaxy, we achieve systematic control of point defect concentrations in the prototypical Dirac semimetal Cd 3 As 2 to gain insight into the role of disorder on electron transport behavior. Using the guiding center diffusion model for linear magnetoresistance, we extract point defect densities as a function of deposition conditions. We find that reducing cadmium defect concentrations by an order of magnitude results in an 2x increase in the magnetoresistance from 450% to 900%. This finding yields important information in the quest to identify the origin of linear magnetoresistance in a wider range of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Domain Wall Reactions in Multiple-Order Parameter Ferroelectrics

The motion of domain walls is crucial for ferroelectric switching. Conventionally, the switching dynamics is believed to be determined by the motion of one or a few low-energy domain wall types of dominant population. Here, we challenge this conventional idea in multiple-order-parameter ferroelectrics. Using hafnia as example, we show that the multiple-order-parameter nature not only provides various mobile domain walls and defectlike immobile domain walls, but also enables the domain wall reactions. In analogy with chemical reactions where substances react to form new substances, domain walls could also react to form other domain walls during switching. We identify several elementary domain wall reaction types including synthesis, decomposition, and exchange reactions. Domain walls are continually changed by these reactions during switching so that the switching behavior reflects the statistical average of many domain wall types with distinct mobility and stability. These reactions also lead to phenomenon like remanent nuclei and defect-site nucleation that facilitate switching and lower coercive field. Finally, the concept of domain wall reaction is not limited to hafnia but can be generalized to any multiple-order-parameter ferroelectric. As a result, this Letter conceptualizes domain wall reaction, expands the theory of ferroelectric switching, and suggests a practical way for defect engineering to control switching behavior.

36 MATERIALS SCIENCE↗