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Charge coupled devices for detection of coherent neutrino-nucleus scattering
Not Available
Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint
Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster timeresponse (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-skyconditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely withwavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral andbroadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.
Low emissivity high-temperature tantalum thin film coatings for silicon devices
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QASMTrans: A QASM Quantum Transpiler Framework for NISQ Devices
In quantum computing, transpilation plays a crucial role in converting high-level, machine-independent quantum circuits into circuits specially for a quantum device, considering factors such as basis gate set, topology, error profile, etc. Yet, the efficiency of transpilation remains a significant bottleneck, particularly when dealing with very large QASM level input files. In this paper, we present QASMTrans, a C++ based high-performance quantum transpiler framework that can demonstrate on average 50-100× speedups compared to the internal transpiler of Qiskit. Particularly, for large dense circuits such as ’uccsd n24’ and ’qft n320’ incorporating millions of gates, QASMTrans can successfully transpile in 69s and 31s, respectively, while Qiskit failed to finish in one hour. Using QASMTrans as the baseline, it becomes more feasible to explore much larger design space and impose more comprehensive compiler optimizations.
Collaboration on SBIR/TTO Phase II Project for Optical QC Device and Collaboration on SBIR/TTO Phase II-b Project for Advanced Quality Inspection Device Development: Cooperative Research and Development CRADA Number CRD-16-00652 (Final Report)
The overall goal of this program is to develop and commercialize a turnkey quality control solution for the entire PEM fuel cell manufacturing process including membrane, gas diffusion layers, catalyst, and assembled systems. This quality control solution is unique to each customer’s specific needs but includes a suite of in-line quality control systems for roll-to-roll manufacturing that can target thin, transparent membrane as well as opaque membrane, catalyst, and GDLs. The Phase II developed the CPNUVV system for thin, transparent membrane that operates using polarized filters to enhance defect resolution and determine thickness. However, PEM material manufacturers want a complete, turnkey solution for all components of the PEM fuel cell. In the Phase IIB, Mainstream will partner with NREL, and transition reflectance technology NREL developed (US Patent 9,234,843) to operate in real-time on a web-line to develop a total solution to PEM quality control. The device will identify and mark defects as well as monitor materials thickness in real-time to improve line efficiency and to reduce waste. The research performed at NREL under this CRADA increases the basis of knowledge about optical inspection methods, how they perform with regards to fuel cell component materials, and how they can be implemented in in-line, real-time configurations to provide quality inspection for roll-to-roll (R2R) manufacturing. Methods explored were found to be sensitive to catalyst loading in electrodes on both membrane and gas diffusion media substrates and to membrane thickness, across a broad range of thickness. The latter capability is novel and now patented and provides a previously unstudied and undemonstrated capability for R2R manufacturing of membranes.
Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices
A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.
A theoretical and experimental study of low voltage, high current dc to ac converters which use either magnetoresistors, superconductors, Hall effect devices, or thin-film devices Final report
Low-voltage, high current dc-ac converter from magnetoresistor, superconductor, Hall effect, or thin-film devices
Study of laser heated propulsion devices. Part 1: Evaluation of laser devices, fuels and energy coupling mechanisms
Closed cycle, CW waveform and short wavelength laser devices are desirable characteristics for laser propulsion. The choice of specific wavelengths for hydrogen fuel affects the operational conditions under which a laser supported absorption (LSA) wave is initiated and maintained. The mechanisms of initiating and maintaining LSA waves depend on the wavelength of the laser. Consequently, the shape and size of the hot core plasma is also dependent on wavelength and pressure. Detailed modeling of these mechanisms must be performed before their actual significance can be ascertained. Inverse bremsstrahlung absorption mechanism is the dominant mechanism for coupling energy into the plasma, but other mechanisms which are wavelength dependent can dictate the LSA wave plasma initiation and maintenance conditions. Multiphoton mechanisms become important at visible or shorter wavelengths. These are important mechanisms in creating the initial H2 gas breakdown and supplying the precursor electrons required to sustain the plasma.
Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices
Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.
Polymer-hybrid electro-optic devices and method of fabricating polymer-hybrid electro-optic devices
A polymer-hybrid electro-optic device is fabricated by providing a semiconductor substrate, depositing a metal electrode layer on the semiconductor substrate, depositing a dielectric barrier core layer within a gap of the metal electrode layer, patterning a polymer layer to cover the dielectric barrier core layer and partially covering the metal electrode layer, infiltrating the polymer layer with an inorganic component to form a hybrid oxide-polymer layer, and removing excess inorganic component from the semiconductor substrate and metal electrode layer.
Semiconductor power device including wire or ribbon bonds over device active region
A semiconductor power device including a base plate; an input lead; an output lead; a field effect transistor (FET) power die disposed over the base plate, wherein the FET power die includes a set of source fingers, a set of drain fingers, and a set of gate fingers disposed directly over an active region, wherein the gate fingers are configured to receive an input signal from the input lead, and wherein the FET power die is configured to process the input signal to generate an output signal at the drain fingers for routing to the output lead; and electrical conductors (wirebonds or ribbons) bonded to the source and/or drain directly over the active region of the FET power die. The electrical conductors produce additional thermal paths between the active region and the base plate for thermal management of the FET power die.
Rapid Photovoltaic Device Characterization through Bayesian Parameter Estimation
Not Available
Understanding molecular fragmentation in blue phosphorescent organic light-emitting devices
Not provided.
Phenanthro[9,10- d ]triazole and imidazole derivatives: high triplet energy host materials for blue phosphorescent organic light emitting devices
A class of wide bandgap host materials is introduced as an alternative to carbazole-based hosts to enhance the efficiency and transport properties of organic light emitting diodes (OLEDs). We have synthesized and investigate the photophysical and electrochemical properties of a series of phenanthrene derivatives incorporating fused triazole or imidazole rings. Here, the resulting phenanthro[9,10-d]triazoles and phenanthro[9,10-d]imidazoles are suitable host materials for blue phosphors due to their high triplet energies and conductivities. Incorporation of bulky substituent groups leads to retention of the high triplet energies in the solid state. The most promising materials are incorporated in blue phosphorescent OLEDs that achieve external quantum efficiencies >20%.
Ablation of high-Z material dust grains in edge plasmas of magnetic fusion devices
The model, including shielding effects of high-Z dust grain ablation in tokamak edge plasma, is presented. In a contrast to shielding models developed for pellets ablation in a hot plasma core, this model deals with the dust grain ablation in relatively cold edge plasma. Using some simplifications, a closed set of equations determining the grain ablation rate Γ is derived and analyzed both analytically and numerically. The scaling law for Γ versus grain radius and ambient plasma parameters is obtained and confirmed by the results of numerical solutions. The results obtained are compared with both dust grain models containing no shielding effects and the pellet ablation models.
Exploration of the Super H-mode regime on DIII-D and potential advantages for burning plasma devices
A new high pedestal regime (“Super H-mode”) has been predicted and accessed on DIII-D. Super H-mode was first achieved on DIII-D using a quiescent H-mode edge, enabling a smooth trajectory through pedestal parameter space. By exploiting Super H-mode, it has been possible to access high pedestal pressures at high normalized densities. While elimination of Edge localized modes (ELMs) is beneficial for Super H-mode, it may not be a requirement, as recent experiments have maintained high pedestals with ELMs triggered by lithium granule injection. Simulations using TGLF for core transport and the EPED model for the pedestal find that ITER can benefit from the improved performance associated with Super H-mode, with increased values of fusion power and gain possible. Similar studies demonstrate that the Super H-mode pedestal can be advantageous for a steady-state power plant, by providing a path to increasing the bootstrap current while simultaneously reducing the demands on the core physics performance.