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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Exploring the physics of cesium lead halide perovskite quantum dots via Bayesian inference of the photoluminescence spectra in automated experiment

The unique optoelectronic properties of metal halide perovskite quantum dots (QDs) make them promising candidates for applications in light-emitting diodes (LEDs), scintillators, and other photonic devices. The automated micropipetting synthesis platform equipped with an optical reader enables the opportunity for high throughput synthesis and photoluminescent (PL) characterization of metal halide perovskite QDs for the first time. Here, we explore the compositional dependence of the PL behavior and stability of the combinatorial library of cesium lead halide (CsPbX 3 ) perovskites QDs via the automated platform. To study the stability of synthesized QDs in the binary and ternary configurations, we study the time-dependent PL properties using previously developed machine learning analysis. Additionally, to systematically explore the PL behavior in the ternary CsPbX 3 QDs system, we introduce the Bayesian inference framework that allows the probabilistic fit of multiple models to the PL data and establishes both optimal model and model parameter robustly. Furthermore, these behaviors can be used as a control parameter for the navigation of the multidimensional compositional spaces in automated synthesis. Furthermore, this analysis shows the nonuniformity of the PL peak behavior in the ternary CsPbX 3 QDs system. Further, the analysis confirms narrow size distribution and good quality of CsPbBr 3 QDs alloyed with low concentrations of iodide and chloride. We note that Bayesian Inference fit parameters can be further used as a control signal for navigation of the chemical spaces in automated synthesis.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Realizing Wide-Gamut Human-Centric Display Lighting with K 3 AlP 3 O 9 N:Eu 2+

Abstract Computers, televisions, and smartphones are revolutionized by the invention of InGaN blue light-emitting diode (LED) backlighting. Yet, continual exposure to the intense blue LED emission from these modern displays can cause insomnia and mood disorders. Developing “human-centric” backlighting that uses a violet-emitting LED chip and a trichromatic phosphor mixture to generate color images is one approach that addresses this problem. The challenge is finding a blue-emitting phosphor that possesses a sufficiently small Stokes’ shift to efficiently down-convert violet LED light and produce a narrow blue emission. This work reports a new oxynitride phosphor that meets this demand. K 3 AlP 3 O 9 N:Eu 2+ exhibits an unexpectedly narrow (45 nm, 2206 cm -1 ), thermally robust, and efficient blue photoluminescence upon violet excitation. Computational modeling and temperature-dependent optical property measurements reveal that the narrow emission arises from a rare combination of preferential excitation and site-selective quenching. The resulting chromaticity coordinates of K 3 AlP 3 O 9 N:Eu 2+ lie closer to the vertex of the Rec. 2020 than a blue LED chip and provides access to ≈10% more colors than a commercial tablet when combined with commercial red- and green-emitting phosphors. Alongside the wide gamut, tuning the emission from the violet LED and phosphor blend can reduce blue light emissions to produce next-generation, human-centric displays.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Origin of Rashba Spin-Orbit Coupling in 2D and 3D Lead Iodide Perovskites

isaWhittaker-Brooks2 & Tho D. Nguyen1* We studied spin dynamics of charge carriers in the superlattice-like Ruddlesden-Popper hybrid lead iodide perovskite semiconductors, 2D (BA)2(MA)Pb2I7 (with MA= CH3NH3, and BA= CH3(CH2)3NH3), and 3D MAPbI3 using the magnetic field effect (MFE) on conductivity and electroluminescence in their light emitting diodes (LEDs) at cryogenic temperatures. The semiconductors with distinct structural/ bulk inversion symmetry breaking, when combined with colossal intrinsic spin–orbit coupling (SOC), theoretically give rise to giant Rashba-type SOC. We found that the magneto-conductance (MC) magnitude increases monotonically with the emission intensity and saturates at ≈0.05% and 0.11% for the MAPbI3 and (BA)2(MA)Pb2I7, respectively. The magneto-electroluminescence (MEL) response with similar line shapes as the MC response has a significantly larger magnitude, and essentially stays constant at ≈0.22% and ≈0.20% for MAPbI3 and (BA)2(MA)Pb2I7, respectively. The sign and magnitude of the MC and MEL responses can be quantitatively explained in the framework of the Δg-based excitonic model using rate equations. Remarkably, the width of the MEL response in those materials linearly increases with increasing the applied electric field, where the Rashba coefficient in (BA)2(MA) Pb2I7 is estimated to be about 7 times larger than that in MAPbI3. Our studies might have significant impact on future development of electrically-controlled spin logic devices via Rashba-like effects

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effect of Anisotropic Confinement on Electronic Structure and Dynamics of Band Edge Excitons in Inorganic Perovskite Nanowires

Inorganic lead halide perovskite nanostructures show promise as the active layers in photovoltaics, light emitting diodes, and other optoelectronic devices. They are robust in the presence of oxygen and water, and the electronic structure and dynamics of these nanostructures can be tuned through quantum confinement. Here we create aligned bundles of CsPbBr3 nanowires with widths resulting in quantum confinement of the electronic wave functions and subject them to ultrafast microscopy. We directly image rapid one-dimensional exciton diffusion along the nanowires, and we measure an exciton trap density of roughly one per nanowire. Using transient absorption microscopy, we observe a polarization-dependent splitting of the band edge exciton line, and from the polarized fluorescence of nanowires in solution, we determine that the exciton transition dipole moments are anisotropic in strength. Furthermore, our observations are consistent with a model in which splitting is driven by shape anisotropy in conjunction with long-range exchange.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Total kinetic energy release in the fast neutron induced fission of actinide nuclei

The total kinetic energy release and fission mass distributions for the fast neutron (En = 3–100 MeV) induced fission of 232 Th, 233 U, 235 U, 237 Np, 239 Pu, 240 Pu, and 242 Pu have been measured using the LANSCE facility. The neutron energies were deduced from time-of- flight measurements. The fission fragments were detected using Si PIN diode detectors, giving us the fragment energies. The actinide targets were made by vapor deposition leading to high-quality targets, that were thin and uniform with reduced impurities. Corrections were made to the data for pulse height defect and the fragment energy loss in the target and its backing. The TKE distributions were Gaussian in shape and their mean value as a function of incoming neutron energy could be fitted with second order polynomials. In the case of 233 U and 235 U, our measurements agree with prior work. Our measurements for 232 Th are unique. Our data agree with Viola scaling. The constant position of the heavy mass peak is interpreted as being due to the influence of the N = 88 and Z = 50 shells. The GEF model predictions agree with the data in general as do the CGMF model predictions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Patterned dielectric back contact design for GaAs thermophotovoltaic devices

-Patterned-dielectric back contact structures in optoelectronic devices are designed to boost the reflectance of light from the device back surface while retaining a low-resistance pathway for electrical conductance. Their reduced light absorption at near- and sub-bandgap photon energies leads to improved luminescence in light-emitting diodes, greater photon recycling, voltage, and efficiency in photovoltaic cells, and greater recuperation of unabsorbed sub-bandgap light in thermophotovoltaic (TPV) systems. However, diffraction from the patterned features can deflect incident light in propagation directions that lead to light trapping and parasitic absorption in the cell. Here, in this article, we use rigorous coupled-wave analysis (RCWA) to study three-dimensional diffractive scattering of electromagnetic waves by periodic metal point-contact gratings on 1.42-eV GaAs TPV cells, to analyze their effect on unwanted sub-bandgap absorption in order to achieve higher TPV system efficiency. Solutions of Maxwell's equations calculated using RCWA are compared to measured sub-bandgap reflectance in experimental GaAs TPV devices with varying metal point-contact diameters and spacing. Modeling and experiments indicate decreased total reflectance due to these diffractive effects for a small point contact diameter of 1 μm, and this effect is much stronger at higher contact coverage fractions.

14 SOLAR ENERGY↗
DOE OSTI2025

Lifting Triplet Degeneracy Through Organic‐Cation Driven Structural Perturbation to Modulate Luminescence of Sb 3+ ‐Doped Double Perovskite

The spin-orbit coupling (SOC) and the Jahn-Teller effect (JTE) alter the orbital degeneracy in materials, leading to unique optical, electronic, and magnetic properties essential in spintronics, quantum computing, and light-emitting diodes (LEDs). Here, the study employs luminescent p-xylylenediammonium (PXA) instead of Cs+ in Cs2NaInCl6 to yield 2D Sb3+-doped (PXA)2NaInCl8 double perovskite and demonstrates a non-degenerate triplet state resulting from enhanced JTE in the strong SOC regime, featuring distinct emission centers. Consequently, a broadband emission from both PXA and [SbCl6]3− spans the entire spectrum (350–750 nm), representing a rare single-source multi-emissive 2D perovskite. With in-depth comparative structural, temperature-dependent photo-physical, and theoretical studies, it is elucidated that the synergistic effect of SOC and JTE on the Eg and T2g lattice modes modulate the electronic structure of [SbCl6]3− by splitting the doubly degenerate E levels of 3 T$^{*}_{1u}$ into non-degenerate states. The physical model, supported by theoretical studies, explains the energy level splitting required to realize two kinds of radiative minima in the relaxed excited state.

36 MATERIALS SCIENCE↗
DOE OSTI2022

From lab to lamp: Understanding downconverter degradation in LED packages

Downconverters, primarily inorganic phosphors, are critical components in white solid-state LED-based lighting and liquid crystal display backlights. Research efforts have led to a fundamental understanding of a downconverter's absorption, photoluminescence, and efficiency as a function of composition, structure, and processing conditions. However, considerably less work has focused on the reliability of phosphors once they are incorporated into LED packages. Solving these issues is often the final step before the commercialization of new materials, but the significant resources and time required to evaluate and mitigate materials failure are rarely discussed in the literature. In this Perspective, we discuss the need for conducting downconverter reliability testing and the potential of accelerating, screening, and understanding downconverter failure modes. Our focus highlights the mechanisms of failure and discusses how this influences materials selection and the design of different LED packages. We also stress the potential for accelerated reliability testing protocols and note the potential role first-principles calculations and data-driven models could play in establishing the compositional-processing trends for different aspects of downconverter reliability. In conclusion, we close with possible research directions that could improve downconverter reliability and emphasize the importance of assessing a material's (chemical) stability where multiple manufacturing and processing steps can dictate system performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Multiband superconductivity in V 3 Si determined from studying the response to controlled disorder

The London penetration depth, λ(T), was measured in a single crystal V 3 Si. The superfluid density obtained from this measurement shows a distinct signature of two almost decoupled superconducting gaps. This alone is insufficient to distinguish between s ± and s ++ pairing states, but it can be achieved by studying the effect of a controlled non-magnetic disorder on the superconducting transition temperature, T c . For this purpose, the same V 3 Si crystal was sequentially irradiated by 2.5 MeV electrons three times, repeating the measurement between the irradiation runs. A total dose of 10 C/cm 2 (6.24 × 10 19 electrons/cm 2 ) was accumulated, for which T c has changed from 16.4 K in a pristine state to 14.7 K (9.3 %). This substantial suppression is impossible for a single isotropic gap, but also it is not large enough for a sign-changing s± pairing state. Our electronic band-structure calculations show how five bands crossing the Fermi energy can be naturally grouped to support two effective gaps, not dissimilar from the iron pnictides physics. We analyze the results using two-gap models for both, λ(T) and T c , which describe the data very well. Finally, the experimental results and theoretical analysis provide strong support for an s ++ superconductivity with two unequal gaps, Δ 1 (0) ≈ 2.53 meV and Δ 2 (0) ≈ 1.42 meV, and a very weak inter-band coupling in V 3 Si superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Charge carrier motion and effect of fixed oxide charge in a microstructured silicon radiation detector

Signal formation in a microstructured semiconductor neutron detector is more complex than in planar diode geometry. Three-dimensional microstructures are laterally smaller than the ionization cloud length, and the electric fields may be weak enough to exhibit plasma time effects. This work is the first detailed treatment of charge carrier motion in these complex semiconductor devices to replicate the time profile and signal magnitude. Simulations were performed using COMSOL Multiphysics to investigate various parameters that affect the propagation of the charge cloud. It was observed that the size of the simulated three-dimensional structure had an impact on the induced current pulse, indicating the importance of simulation geometry optimization to accurately simulate charge cloud expansion. COMSOL Multiphysics was used to replicate accurate charge creation profiles using energy deposition information imported from radiation transport codes. A detailed simulation methodology is presented to benchmark preamplifier event pulses along with complexities in modeling the charge carrier motion along the etched microstructured trenches with Si–SiO 2 boundary conditions, including fixed oxide charge and interface trapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides

Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.

Wang, Yueyin↗
DOE OSTI2023

Sensitive Detection of an Erbium Isotope in an Atomic Beam Using Cavity Ring-Down Spectroscopy

Here, we have applied cavity ring-down spectroscopy (CRDS) to the study of the 166Er isotope in an atomic beam. These measurements were realized with an external cavity diode laser tuned to the 400.9 nm atomic transition of erbium and a customized high-finesse ring-down optical cavity under vacuum. Erbium atomic beams of different number densities were generated in a tantalum foil micro-crucible within the cavity. Absorbance values of the 166Er isotope between 3 × 10–6 and 7 × 10–5 were measured with a best-case precision on the order of 10–6, which is remarkable when considering the extreme temperatures at which the measurements were conducted, and the short detection path which is characteristic of collimated atomic beams. Number densities of erbium atoms were inferred to be between 2 × 106 and 6 × 107 cm–3. This work demonstrates for the first time the ability of studying dilute atomic beams of refractory materials with high accuracy utilizing CRDS. In these initial studies, we used erbium as a model system, but we expect to extend the proposed approach to the measurement of isotopes of uranium and plutonium for nuclear non-proliferation applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Argon metastable density and temperature of a 94 GHz microplasma

Laser diode absorption spectroscopy is used to experimentally measure Ar(1s 5 ) metastable density and translational gas temperature within a 94 GHz microplasma. A square two-dimensional photonic crystal (PhC) at this resonance frequency serves to ignite and sustain the plasma from 20 to 200 Torr (2.7 × 10 3 –2.7 × 10 4 Pa) by using millimeter wave power from 300 to 1000 mW. Metastable density within the plasma is estimated from the absorption line shape of the laser traversing the PhC. The metastable density reaches an order of 10 19 m –3 at lower pressure and decreases as pressure increases. From the Lorentzian line shape of the absorption profile at 811.53 nm, the gas temperature is extracted and found to increase from 500 K at 20 Torr to 1300 K at 200 Torr. Furthermore, these data are analyzed and compared with a zero-dimensional plasma model and with previous experimental plasma results at 43 GHz.

42 ENGINEERING↗
DOE OSTI2022

Preliminary benchmarks and analysis of boundary conditions in a trenched microstructured silicon radiation detector

Microstructured neutron detectors have the benefit of enhanced neutron detection efficiency as compared to planar devices, achieved by etching 6 LiF-filled trenches on the top surface of a silicon PIN diode. This sensor geometry results in a complex electric field distribution and depletion characteristics within the diode under reverse bias. For the first time on record, the effects of a fixed oxide charge on the microstructured device depletion characteristics and mobile carrier transport is investigated. Prototype detectors were fabricated with non-conformal surface doping. Capacitance voltage and current voltage measurements were performed for these prototypes and compared with COMSOL Multiphysics simulations. A spectral response from an 241Am alpha particle source was acquired and analyzed. It was found that monoenergetic alpha particles produce three prominent peaks in the pulse height spectrum output by the device. The peaks were confirmed by simulations to correlate with dead layers and incident trajectories into the microstructure. It was also found that significant differences in pulse rise time result, corresponding with events arriving in a low-field region in the fins and a high-field region in the bulk. Geant4 was utilized for radiation transport, interaction modeling, and benchmarking the spectral data. The results of this simulation work provide confidence in the ability to attain and benchmark electrical characteristics and spectral data for semiconductor radiation detectors employing complex microstructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Correlation Between Corrugation-Induced Flexoelectric Polarization and Conductivity of Low-Dimensional Transition Metal Dichalcogenides

The tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary their electrophysical properties from nonpolar to ferroelectric, and from direct-band semiconducting to metallic. In addition to classical controlling factors, such as field effect, composition, and doping, new degrees of freedom emerge in TMDs due to the curvature-induced electron redistribution and the associated changes in electronic properties. Here we theoretically explore the elastic and electric fields, flexoelectric polarization and free charge density for a TMD nanoflake placed on a rough substrate with a sinusoidal corrugation profile. Finite element modelling results for different flake thickness and corrugation depth yield insights into the flexoelectric nature of the out-of-plane electric polarization and establish the unambiguous correlation between the polarization and static conductivity modulation. The modulation is caused by the coupling between the deformation potential and inhomogeneous elastic strains, which evolve in the TMD nanoflake due to the adhesion between the flake surface and corrugated substrate. We reveal a pronounced maximum in the thickness dependences of the electron and hole conductivity of MoS 2 and MoTe 2 nanoflakes placed on a corrugated substrate, which opens the way for the optimization of their geometry towards significant improvement in their polar and electronic properties, necessary for advanced applications in nanoelectronics and memory devices. Specifically, the obtained results can be useful for the development of nanoscale straintronic devices based on the bended MoS 2 , MoTe 2 , and MoSTe nanoflakes, such as diodes and bipolar transistors with a bending-controllable sharpness of p-n junctions.

42 ENGINEERING↗
DOE OSTI2025

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗
DOE OSTI2020

Nonreciprocal directional dichroism of a chiral magnet in the visible range

Nonreciprocal directional dichroism is an unusual light–matter interaction that gives rise to diode-like behavior in low-symmetry materials. The chiral varieties are particularly scarce due to the requirements for strong spin–orbit coupling, broken time-reversal symmetry, and a chiral axis. Here we bring together magneto-optical spectroscopy and first-principles calculations to reveal high-energy, broadband nonreciprocal directional dichroism in Ni 3 TeO 6 with special focus on behavior in the metamagnetic phase above 52 T. In addition to demonstrating this effect in the magnetochiral configuration, we explore the transverse magnetochiral orientation in which applied field and light propagation are orthogonal to the chiral axis and, by so doing, uncover an additional configuration with a unique nonreciprocal response in the visible part of the spectrum. In a significant conceptual advance, we use first-principles methods to analyze how the Ni 2+ d-to-d on-site excitations develop magneto-electric character and present a microscopic model that unlocks the door to theory-driven discovery of chiral magnets with nonreciprocal properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗