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At least 199 records · Page 11

Detection of Chemical Precursors of Explosives

Certain selected chemicals associated with terrorist activities are too unstable to be prepared in final form. These chemicals are often prepared as precursor components, to be combined at a time immediately preceding the detonation. One example is a liquid explosive, which usually requires an oxidizer, an energy source, and a chemical or physical mechanism to combine the other components. Detection of the oxidizer (e.g. H2O2) or the energy source (e.g., nitromethane) is often possible, but must be performed in a short time interval (e.g., 5 15 seconds) and in an environment with a very small concentration (e.g.,1 100 ppm), because the target chemical(s) is carried in a sealed container. These needs are met by this invention, which provides a system and associated method for detecting one or more chemical precursors (components) of a multi-component explosive compound. Different carbon nanotubes (CNTs) are loaded (by doping, impregnation, coating, or other functionalization process) for detecting of different chemical substances that are the chemical precursors, respectively, if these precursors are present in a gas to which the CNTs are exposed. After exposure to the gas, a measured electrical parameter (e.g. voltage or current that correlate to impedance, conductivity, capacitance, inductance, etc.) changes with time and concentration in a predictable manner if a selected chemical precursor is present, and will approach an asymptotic value promptly after exposure to the precursor. The measured voltage or current are compared with one or more sequences of their reference values for one or more known target precursor molecules, and a most probable concentration value is estimated for each one, two, or more target molecules. An error value is computed, based on differences of voltage or current for the measured and reference values, using the most probable concentration values. Where the error value is less than a threshold, the system concludes that the target molecule is likely. Presence of one, two, or more target molecules in the gas can be sensed from a single set of measurements.

Li, Jing↗

Investigation into the Origin of the RF Phase Noise for the LISA Laser Transmitter

The Laser Interferometer Space Antenna (LISA) mission is a collaborative consortium led by the European Space Agency (ESA)in cooperation with the National Aeronautics and Space Administration (NASA). LISA’s goal is to capture gravitational wave events, such as spacetime distortions caused by massive orbiting bodies. Multiple low noise, single frequency master oscillator power amplifier (MOPA) lasers with a polarization-maintaining Yb-fiber amplifier will serve as the light sources for the LISA observatory. The NASA Goddard Space Flight Center (GSFC)is currently developing the laser transmitters for this project. The LISA lasers will carry radio frequency (RF)sidebands for exchanging reference RF clock information between spacecrafts. Excess phase noise, especially carrier-sideband differential phase noise added to the modulation side band by the phase modulator and the fiber amplifier, becomes a concern. In the gravitational wave frequency ranges, leading sources of this RF “differential” phase noise can be both intrinsic and extrinsic. Examples of intrinsic sources include thermal load on the active fiber, thermo-mechanical induced birefringence, and nonlinearities in the various passive and active fibers. Extrinsic sources can include external temperature fluctuations and infrasonic mechanical strain or vibrations. These noise spectra usually include both white and pink (1/f) thermal noise contributions. This work investigates the physical origins and impact of these sources of RF phase noise, and their characteristic spectra and management will be discussed.

Laser Interferometer Space Antenna↗

Steady state growth and segregation under zero gravity: InSb

It was established that ideal diffusion controlled steady state conditions, never accomplished on earth, were achieved during the growth of Te-doped InSb crystals in Skylab. Surface tension effects were found to establish non-wetting conditions under which free surface solidification took place in confined geometry. It was further found that, under forced contact conditions, surface tension effects led to the formation of surface ridges (not previously observed on earth) which isolated the growth system from its container. In addition, it was possible for the first time to identify unambiguously: the origin of segregation discontinuities associated with facet growth, the mode of nucleation and propagation or rotational twin boundaries, and the specific effect of mechanical-shock perturbations on segregation. The results obtained prove the advantageous conditions provided by outer space. Thus, fundamental data on solidification thought to be unattainable because of gravity induced interference on earth are now within reach.

Witt, A. F.↗

Shuttle Mission STS-50: Orbital Processing of High-Quality CdTe Compound Semiconductors Experiment: Final Flight Sample Characterization Report

The Orbital Processing of High-Quality Doped and Alloyed CdTe Compound Semiconductors program was initiated to investigate, quantitatively, the influences of gravitationally dependent phenomena on the growth and quality of bulk compound semiconductors. The objective was to improve crystal quality (both structural and compositional) and to better understand and control the variables within the crystal growth production process. The empirical effort entailed the development of a terrestrial (one-g) experiment baseline for quantitative comparison with microgravity (mu-g) results. This effort was supported by the development of high-fidelity process models of heat transfer, fluid flow and solute redistribution, and thermo-mechanical stress occurring in the furnace, safety cartridge, ampoule, and crystal throughout the melting, seeding, crystal growth, and post-solidification processing. In addition, the sensitivity of the orbital experiments was analyzed with respect to the residual microgravity (mu-g) environment, both steady state and g-jitter. CdZnTe crystals were grown in one-g and in mu-g. Crystals processed terrestrially were grown at the NASA Ground Control Experiments Laboratory (GCEL) and at Grumman Aerospace Corporation (now Northrop Grumman Corporation). Two mu-g crystals were grown in the Crystal Growth Furnace (CGF) during the First United States Microgravity Laboratory Mission (USML-1), STS-50, June 24 - July 9, 1992.

Larson, David J.↗

Polyimide matrix composites - Polyimidesulfone/LARC-TPI (1:1) blend

Polyimide matrix composites were fabricated from unidirectional unsized AS-4 carbon fiber and a doped 1:1 blend of two polyimides: PISO2 and LARC-TPI. To enhance melt flow properties, the molecular weight of the PISO2 was controlled by end-capping with phthalic anhydride and addition of 5 percent by weight p-phenylenediamine-phthalic anhydride bisamic acid dopant. Prepreg was drum-wound using a diglyme slurry comprised of the soluble polyamideacid of PISO2, the soluble bisamideacid of the dopant, and the insoluble imidized LARC-TPI powder. Melt flow studies with a rotary rheometer and parallel plate plastometer on neat resin and prepreg helped develop an optimum cure cycle. Composite mechanical properties at room and elevated temperatures, dry and moisture-saturated, were evaluated, including short beam shear strength and flexure, tensile, shear, and compression properties. Two 18 x 24-inch skin-stringer panels were fabricated, one of which was tested in compression to failure.

Johnston, Norman J.↗

Correlation of deformation mechanisms with the tensile and compressive behavior of NiAl and NiAl(Zr) intermetallic alloys

To identify the mechanisms controlling strength and ductility in powder-extruded NiAl and NiAl + 0.05 at. pct Zr, tensile and compressive testing was performed from 300 to 1300 K for several grain sizes. Grain size refinement significantly increased yield stress in both alloys and, in some cases, slightly lowered the ductile-to-brittle transition temperature (DBTT), although no room-temperature tensile ductility was observed even in the finest grain size specimens. The small Zr addition increased the DBTT and changed the low-temperature fracture mode from intergranular in NiAl to a combination of intergranular and transgranular in the Zr-doped alloy. Scanning electron microscopy of compression specimens deformed at room temperature revealed the presence of grain-boundary cracks in both alloys. These cracks were due to the incompatibility of strain in the polycrystalline material, owing to the lack of five independent slip systems. The tendency to form grain-boundary cracks, in addition to the low fracture stress of these alloys, contributed to the lack of tensile ductility at low temperatures.

Bowman, R. R.↗

Mechanisms of Apatite Formation in Reactions of Yb 2-2x Gd 2x Si 2 O 7 with CMAS

Bulk β-Yb 1.9 Gd 0.1 Si 2 O 7 , β-Yb 1.6 Gd 0.4 Si 2 O 7 , and γ-Yb 1.4 Gd 0.6 Si 2 O 7 , along with baseline γ-Y 2 Si 2 O 7 and β-Yb 2 Si 2 O 7 were investigated in contact with a molten silicate to determine mechanisms of thermochemical degradation. A model 30.67CaO-8.25MgO-12.81AlO 1.5- 48.27SiO 2 silicate composition was deposited on the surfaces of the samples at a loading of ~2 mg/cm 2 . Reactions with the molten silicate resulted in the formation of a silicate apatite layer, which has been shown to reduce further molten silicate infiltration. Additions of gadolinium up to 30 mol% to Yb 2 Si 2 O 7 reduced infiltration up to ~60% compared to baseline Yb 2 Si 2 O 7 , but additional exposure time at temperature resulted in loss of the apatite layer. The results herein indicate that doping with gadolinium disilicate may not be beneficial in the long term degradation of disilicate-based EBCs by molten silicates.

Jamesa L. Stokes↗

Selected developments in laser wire stripping

The operation of mechanical and thermal strippers and the early development of laser wire strippers are reviewed. NASA sponsored development of laser wire stripping for space shuttle includes bench-type strippers as well as an advanced portable hand-held stripper which incorporates a miniaturized carbon dioxide laser and a rotating optics unit with a gas-jet assist and debris exhaust. Drives and controls girdle the wire and slit the remaining slug without manual assistance. This unit can strip wire sizes 26 through 12 gage. A larger-capacity hand-held unit for wire sizes through 1/0 gage was built using a neodynium-doped yttrium aluminum garnet (Nd:YAG) laser. The hand-held units have a flexible umbilical cable to an accompanying cart that carries the power supply, gas supply, cooling unit, and the controls.

Source record↗

Tetravalent chromium (Cr(4+)) as laser-active ion for tunable solid-state lasers

Major accomplishments under NASA grant NAG-1-1346 are summarized. (1) numerical modeling of the four mirror astigmatically compensated, Z-fold cavity was performed and several design parameters to be used for the construction of a femtosecond forsterite laser were revealed by simulation. (2) femtosecond pulses from a continuous wave mode-locked chromium doped forsterite laser were generated. The forsterite laser was actively mode-locked using an acousto-optic modulator operating at 78 MHz with two Brewster high dispersion glass prisms for intra-cavity chirp compensation. Transform-limited sub-100-fs pulses were routinely generated in the TEM(sub 00) mode with 85 mW of continuous power tunable over 1230-1280 nm. The shortest pulses of 60-fs pulsewidth were measured. (3) Self-mode-locked operation of the Cr:forsterite laser was achieved. Synchronous pumping was used to mode lock the forsterite laser resulting in picosecond pulses, which in turn provided the starting mechanism for self-mode-locking. The pulses generated had an FWHM of 105 fs and were tunable between 1230-1270 nm. (4) Numerical calculations indicated that the pair of SF 14 prisms used in the cavity compensated for quadratic phase but introduced a large cubic phase term. Further calculations of other optical glasses indicated that a pair of SFN 64 prisms can introduce the same amount of quadratic phase as SF 14 prisms but introduce a smaller cubic phase. When the SF 14 prisms were replaced by SFN 64 prisms the pulsewidth was reduced to 50 fs. Great improvement was observed in the stability of the self mode-locked forsterite laser and in the ease of achieving mode locking. Using the same experimental arrangement and a new forsterite crystal with improved FOM the pulse width was reduced to 36 fs.

Seas, A.↗

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

Sarkisov, S.↗

Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics

A plasma-enhanced chemical vapor deposition (PECVD) growth technique has been developed where the choice of starting substrate was found to influence the electrical characteristics of the resulting carbon nanofiber (CNF) tubes. It has been determined that, if the tubes are grown on refractory metallic nitride substrates, then the resulting tubes formed with dc PECVD are also electrically conducting. Individual CNFs were formed by first patterning Ni catalyst islands using ebeam evaporation and liftoff. The CNFs were then synthesized using dc PECVD with C2H2:NH3 = [1:4] at 5 Torr and 700 C, and approximately equal to 200-W plasma power. Tubes were grown directly on degenerately doped silicon <100> substrates with resistivity rho approximately equal to 1-5 meterohm-centimeter, as well as NbTiN. The approximately equal to 200-nanometer thick refractory NbTiN deposited using magnetron sputtering had rho approximately equal to 113 microohm-centimeter and was also chemically compatible with CNF synthesis. The sample was then mounted on a 45 beveled Al holder, and placed inside a SEM (scanning electron microscope). A nanomanipulator probe stage was placed inside the SEM equipped with an electrical feed-through, where tungsten probes were used to make two-terminal electrical measurements with an HP 4156C parameter analyzer. The positive terminal nanoprobe was mechanically manipulated to physically contact an individual CNF grown directly on NbTiN as shown by the SEM image in the inset of figure (a), while the negative terminal was grounded to the substrate. This revealed the tube was electrically conductive, although measureable currents could not be detected until approximately equal to 6 V, after which point current increased sharply until compliance (approximately equal to 50 nA) was reached at approximately equal to 9.5 V. A native oxide on the tungsten probe tips may contribute to a tunnel barrier, which could be the reason for the suppressed transport at low biases. Currents up to approximately 100 nA could be cycled, which are likely to propagate via the tube surface, or sidewalls, rather than the body, which is shown by the I-V in figure (a). Electrical conduction via the sidewalls is a necessity for dc NEMS (nanoelectromechanical system) applications, more so than for the field emission applications of such tubes. During the tests, high conductivity was expected, because both probes were shorted to the substrate, as shown by curve 1 in the I-V characteristic in figure (b). When a tube grown on NbTiN was probed, the response was similar to the approximately equal to 100 nA and is represented by curve 2 in figure (b), which could be cycled and propagated via the tube surface or the sidewalls. However, no measureable currents for the tube grown directly on Si were observed as shown by curve 3 in figure (b), even after testing over a range of samples. This could arise from a dielectric coating on the sidewalls for tubes on Si. As a result of the directional nature of ion bombardment during dc PECVD, Si from the substrate is likely re-sputtered and possibly coats the sidewalls.

Kaul, Anupama B.↗

Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties

By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.

phases↗

A theoretical analysis of the current-voltage characteristics of solar cells

Various mechanisms which limit the conversion efficiency of silicon solar cells were studied. The effects of changes in solar cell geometry such as layer thickness on performance were examined. The effects of various antireflecting layers were also examined. It was found that any single film antireflecting layer results in a significant surface loss of photons. The use of surface texturing techniques or low loss antireflecting layers can enhance by several percentage points the conversion efficiency of silicon cells. The basic differences between n(+)-p-p(+) and p(+)-n-n(+) cells are treated. A significant part of the study was devoted to the importance of surface region lifetime and heavy doping effects on efficiency. Heavy doping bandgap reduction effects are enhanced by low surface layer lifetimes, and conversely, the reduction in solar cell efficiency due to low surface layer lifetime is further enhanced by heavy doping effects. A series of computer studies is reported which seeks to determine the best cell structure and doping levels for maximum efficiency.

Dunbar, P. M.↗

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗

Polyimide Matrix composites: Polyimidesulfone/LARC-TPI (1:1) blend

Polyimide matrix composites were fabricated from unidirectional unsized AS-4 carbon fiber and a doped 1:1 blend of two polyimides: benzophenone dianhydride-3,3'-diamino diphenylsulfone (PISO2) and benzophenone dianhydride-3,3'-diamino benzophenone (LARC-TPI). To enhance melt flow properties, the molecular weight of the PISO2 was controlled by end-capping with phthalic anhydride and addition of 5 percent by weight p-phenylene diamine-phthalic anhydride bisamic acid dopant. Prepreg was drum-wound using a diglyme slurry comprised of the soluble polyamideacid of PISO2, the soluble bisamideacid of the dopant, and the insoluble imidized LARC-TPI powder. Melt flow studies with a rotary rheometer and parallel plate plastometer on neat resin and prepreg helped develop an optimum cure cycle. Composite mechanical properties at room and elevated temperatures, dry and moisture-saturated, were evaluated, including short beam shear strength and flexure, tensile, shear, and compression properties. Two 18 in. x 24 in. skin-stringer panels were fabricated, one of which was tested in compression to failure.

Johnston, Norman J.↗

"Genetically Engineered" Nanoelectronics

The quantum mechanical functionality of nanoelectronic devices such as resonant tunneling diodes (RTDs), quantum well infrared-photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs) is enabled by material variations on an atomic scale. The design and optimization of such devices requires a fundamental understanding of electron transport in such dimensions. The Nanoelectronic Modeling Tool (NEMO) is a general-purpose quantum device design and analysis tool based on a fundamental non-equilibrium electron transport theory. NEW was combined with a parallelized genetic algorithm package (PGAPACK) to evolve structural and material parameters to match a desired set of experimental data. A numerical experiment that evolves structural variations such as layer widths and doping concentrations is performed to analyze an experimental current voltage characteristic. The genetic algorithm is found to drive the NEMO simulation parameters close to the experimentally prescribed layer thicknesses and doping profiles. With such a quantitative agreement between theory and experiment design synthesis can be performed.

Klimeck, Gerhard↗

Conceptual design of a hybrid Ge:Ga detector array

For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

Parry, C. M.↗

Endo-Fullerene and Doped Diamond Nanocrystallite Based Models of Qubits for Solid-State Quantum Computers

Models of encapsulated 1/2 nuclear spin H-1 and P-31 atoms in fullerene and diamond nanocrystallite, respectively, are proposed and examined with ab-initio local density functional method for possible applications as single quantum bits (qubits) in solid-state quantum computers. A H-1 atom encapsulated in a fully deuterated fullerene, C(sub 20)D(sub 20), forms the first model system and ab-initio calculation shows that H-1 atom is stable in atomic state at the center of the fullerene with a barrier of about 1 eV to escape. A P-31 atom positioned at the center of a diamond nanocrystallite is the second model system, and 3 1P atom is found to be stable at the substitutional site relative to interstitial sites by 15 eV, Vacancy formation energy is 6 eV in diamond so that substitutional P-31 atom will be stable against diffusion during the formation mechanisms within the nanocrystallite. The coupling between the nuclear spin and weakly bound (valance) donor electron coupling in both systems is found to be suitable for single qubit applications, where as the spatial distributions of (valance) donor electron wave functions are found to be preferentially spread along certain lattice directions facilitating two or more qubit applications. The feasibility of the fabrication pathways for both model solid-state qubit systems within practical quantum computers is discussed with in the context of our proposed solid-state qubits.

Park, Seongjun↗