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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Breakdown of the drift-diffusion model for transverse spin transport in a disordered Pt film

Spin-accumulation and spin-current profiles are calculated for a disordered Pt film subjected to an in-plane electric current within the nonequilibrium Green's function approach. In the bulklike region of the sample, this approach captures the intrinsic spin Hall effect found in other calculations. Near the surfaces, the results reveal qualitative differences with the results of the widely used spin-diffusion model, even when the boundary conditions are modified to try to account for them. One difference is that the effective spin-diffusion length for transverse spin transport is significantly different from its longitudinal counterpart and is instead similar to the mean-free path. Furthermore, this feature may be generic for spin currents generated via the intrinsic spin Hall mechanism because of the differences in transport mechanisms compared to longitudinal spin transport. Orbital accumulation in the Pt film is only significant in the immediate vicinity of the surfaces and has a small component penetrating into the bulk only in the presence of spin-orbit coupling, as a secondary effect induced by the spin accumulation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Proximity ferroelectricity in wurtzite heterostructures

Proximity ferroelectricity is an interface-associated phenomenon in electric-field-driven polarization reversal in a non-ferroelectric polar material induced by one or more adjacent ferroelectric materials. Here, in this paper, we report proximity ferroelectricity in wurtzite ferroelectric heterostructures. In the present case, the non-ferroelectric layers are AlN and ZnO, whereas the ferroelectric layers are Al 1−x B x N, Al 1−x Sc x N and Zn 1−x Mg x O. The layered structures include nitride–nitride, oxide–oxide and nitride–oxide stacks that feature two-layer (asymmetric) and three-layer (symmetric) configurations. Ferroelectric switching in both layers is validated by multimodal characterization methods, including polarization hysteresis, anisotropic chemical etching, second harmonic generation, piezo response force microscopy, electromechanical testing and atomic resolution polarization orientation imaging in real space by scanning transmission electron microscopy. We present a physical switching model in which antipolar nuclei originate in the ferroelectric layer and propagate towards the internal non-ferroelectric interface. The domain wall leading edge produces elastic and electric fields that extend beyond the interface at close proximity, reducing the switching barrier in the non-ferroelectric layer, and allowing complete domain propagation without breakdown. Density functional theory calculations of polymorph energies, reversal barriers and domain wall energies support this model. Proximity ferroelectricity enables polarization reversal in wurtzites without the chemical or structural disorder that accompanies elemental substitution, opening new questions and opportunities regarding interface-based ferroelectricity.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Dielectric properties of neutron and proton irradiated polymeric nanocomposite insulation for superconducting magnets of fusion power plants

Studies on radiation-resistant electrical insulation for superconducting magnets of nuclear fusion power plants are discussed. Metal oxide nanoparticle-incorporated organic polymer composite (MONAP) insulation films were manufactured and studied for their dielectric breakdown strength after exposure to neutrons and proton radiation at varying levels. Samples with up to 5 wt% of nanoparticles (NPs) of SiO 2 , MgO, and ZrO 2 were studied. The samples were exposed to radiation of up to 2 × 10 16 neutrons/cm 2 and 200 Mrad of protons. The addition of the nanoparticles improved the radiation resistance of the MONAP, and the performance depended on the type of NPs and the radiation exposure. Dielectric breakdown measurements at 77 K showed little degradation. Enhancement of dielectric strength was observed in some instances.

36 MATERIALS SCIENCE↗
DOE OSTI2019

In Situ TEM Study of the Amorphous-to-Crystalline Transition during Dielectric Breakdown in TiO 2 Film

Dielectric breakdown of oxides is a main limiting factor for improvement of the performance of electronic devices. Present understanding suggests that defects produced by intense voltage accumulate in the oxide to form a percolation path connecting the two electrodes and trigger the dielectric breakdown. However, reports on directly visualizing the process at nanoscale are very limited. Here, we apply in situ transmission electron microscopy to characterize the structural and compositional changes of amorphous TiO 2 under extreme electric field (~100 kV/mm) in a Si/TiO 2 /W system. Upon applying voltage pulses, the amorphous TiO 2 gradually transformed to crystalline sub-stoichiometric rutile TiO 2-x and the Magnéli phase Ti 3 O 5 . The transitions started fromat the anode/oxide interface under both field polarities. Preferred growth orientation Epitaxial growth of rutile TiO 2-x with respect toon the Si substrate was observed when Si was the anode, while oxidation and melting of the W probe occurred when W was the anode. We associate the TiO 2 crystallization process with the electrochemical reduction of TiO 2 , polarity-dependent oxygen migration, and Joule heating. The experimental results are supported by our phase-field modeling. These findings provide direct details of the defect formation process during dielectric breakdown in amorphous oxides and will help the design of electronic devices with higher efficiency and reliability.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Probing putative orbital differentiation effects via Eu 2+ spin dynamics in Sr 1-x Eu x Fe 2 As 2

Here, in this work, we report x-ray powder diffraction, elemental analysis, electrical resistivity, magnetic susceptibility, specific heat, and electron spin resonance (ESR) in single crystals of Sr 1-x Eu x Fe 2 As 2 . We observed a breakdown of the previously reported scaling between the Eu 2+ Korringa relaxation rate obtained from ESR and the spin density wave temperature evolution for Sr-rich samples. This result suggests a distinct evolution of the orbital differentiation of the Fe 3d bands along the Sr-based series when compared to the Ba counterpart. We argue that this difference is related to a larger splitting between the structural (tetragonal-to-orthorhombic) and the Fe-driven spin density wave transitions induced by Eu doping in this series. In fact, our results indicate that the two transitions follow an opposite x-Eu dependence for Sr-concentrated samples. Our work shows that Sr 1-x Eu x Fe 2 As 2 series and the comparison with their Ba-based counterparts are exciting platforms to be explored for understanding the interplay among orbital differentiation, magnetism, and structural distortions in the iron pnictides

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

EpiPro, a Novel, Synthetic, Activity-Regulated Promoter That Targets Hyperactive Neurons in Epilepsy for Gene Therapy Applications

Epileptogenesis is characterized by intrinsic changes in neuronal firing, resulting in hyperactive neurons and the subsequent generation of seizure activity. These alterations are accompanied by changes in gene transcription networks, first with the activation of early-immediate genes and later with the long-term activation of genes involved in memory. Our objective was to engineer a promoter containing binding sites for activity-dependent transcription factors upregulated in chronic epilepsy (EpiPro) and validate it in multiple rodent models of epilepsy. First, we assessed the activity dependence of EpiPro: initial electrophysiology studies found that EpiPro-driven GFP expression was associated with increased firing rates when compared with unlabeled neurons, and the assessment of EpiPro-driven GFP expression revealed that GFP expression was increased ~150× after status epilepticus. Following this, we compared EpiPro-driven GFP expression in two rodent models of epilepsy, rat lithium/pilocarpine and mouse electrical kindling. In rodents with chronic epilepsy, GFP expression was increased in most neurons, but particularly in dentate granule cells, providing in vivo evidence to support the “breakdown of the dentate gate” hypothesis of limbic epileptogenesis. Finally, we assessed the time course of EpiPro activation and found that it was rapidly induced after seizures, with inactivation following over weeks, confirming EpiPro’s potential utility as a gene therapy driver for epilepsy.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

A novel A-ϕ formulation for efficient electromagnetic computations

In numerical simulation of electromagnetic prob- lems, potential-based formulations have advantages over field- based formulations because of their immunity to the low- frequency breakdown catastrophe. Recently, an all-frequency stable formulation has been proposed to solve electromagnetic problems in a wide frequency band. This formulation employs magnetic vector and electric scalar potentials, as well as an auxiliary potential to enforce an inhomogeneous Coulomb gauge. However, such a three-potential formulation has encountered convergence issues at low frequencies. To avoid the convergence issue and improve computational efficiency, a novel formulation with only two potentials and an implicit Coulomb gauge is proposed in this paper. A numerical example is presented to show its solution accuracy and computational efficiency.

Mekonnen, Minyechil↗
DOE OSTI2022

Electric field distribution in a non-self-sustained RF discharge with ionization generated by Ns discharge pulses

Abstract Electric field in a capacitively coupled, non-self-sustained RF discharge nitrogen plasma with external ionization generated by high-voltage ns pulses has been measured by ps Electric field induced second harmonic generation (EFISH). The measurements are made both in the bulk of the plasma and in the sheaths, using the absolute calibration by the Laplacian field between two plane electrodes. The results are compared with the kinetic modeling calculations. The RF electric field in the sheaths is significantly higher compared to that in the plasma, due to the displacement of the electrons by the drift oscillations and the resultant plasma self-shielding. However, the kinetic modeling predictions indicate that the electron impact ionization in the sheaths is largely ineffective, due to the low electron density. The reduction of the electric field in the plasma by the self-shielding in the sheaths is moderate, such that the energy is coupled to the plasma by the below-breakdown RF field. The peak RF field in the plasma is in the range of 15–25 Td, indicating the efficient vibrational excitation of N 2 by electron impact. The modeling predictions suggest that the targeted vibrational excitation of molecular species in a non-self-sustained RF discharge with external ionization is scalable to high pressures, electron densities, and discharge powers. The present approach can be extended to the vibrational excitation of other molecular species where the vibrational relaxation is relatively slow, such as CO, CO 2 , and H 2 .

Physics↗
DOE OSTI2024

Design, characterization and installation of the NEXT-100 cathode and electroluminescence regions

NEXT-100 is currently being constructed at the Laboratorio Subterráneo de Canfranc in the Spanish Pyrenees and will search for neutrinoless double beta decay using a high-pressure gaseous time projection chamber (TPC) with 100 kg of xenon. Charge amplification is carried out via electroluminescence (EL) which is the process of accelerating electrons in a high electric field region causing secondary scintillation of the medium proportional to the initial charge. The NEXT-100 EL and cathode regions are made from tensioned hexagonal meshes of 1 m diameter. This paper describes the design, characterization, and installation of these parts for NEXT-100. Simulations of the electric field are performed to model the drift and amplification of ionization electrons produced in the detector under various EL region alignments and rotations. Measurements of the electrostatic breakdown voltage in air characterize performance under high voltage conditions and identify breakdown points. Furthermore, the electrostatic deflection of the mesh is quantified and fit to a first-principles mechanical model. Measurements were performed with both a standalone test EL region and with the NEXT-100 EL region before its installation in the detector. Finally, we describe the parts as installed in NEXT-100, following their deployment in Summer 2023.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Generating and Sustaining Microplasma with Microwaves (Final Report)

Plasma can be generated in spaces ranging in size from astronomical down to the microscopic. The physics that describes the gas breakdown is different at each size scale. The dominant physical phenomenon also depends on the type of electromagnetic field that drives the breakdown – static, AC, RF, microwave, visible. This project, staffed by undergraduate researchers and their mentor, focused on plasma generated in the size range of 10 to 500 micrometers using microwave energy. This project was motivated by the prior observation that plasma can only be generated in microgaps when the gas is above a certain gap-dependent pressure, here called the transition pressure. A microwave-driven microgap was designed and constructed in this project and then used to measure the electric field required to initiate plasma over a wide range of pressures from 0.1 Torr to 760 Torr (1 atmosphere).

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Pyrolysis of Radioactive Spent Resins in the PRIME Installation - 20190

Montair and Belgoprocess developed the pilot PRIME (Pyrolysis Resins In Mobile Electric) Installation for treatment of spent resins in one single reactor without pre-treatment and without intermixing of other waste, allowing for easy traceability and isotopic characterization of the end product. Both low level waste (LLW, < 2 mSv/h) and medium level waste (MLW, > 2 mSv/h) can be treated in the installation. The PRIME pilot installation is designed to treat 2 batches of 100 liter of saturated ion exchange resins over a period of 24 hours. A dosing unit with screw feeder is used for the dosing of the saturated ion exchange resins to the pyrolysis reactor. This completely new developed innovative pyrolysis reactor contains a special design mechanical stirrer and can operate at a temperature of up to 600 deg. C under inert conditions. As a result, the organic molecules will decompose at an accelerated rate until only the mineralized material remains. The lower temperature and the absence of oxygen also prevent the breakdown of ion exchange resins into (powdery) ash, which is a considerable advantage during further handling. Gases that are released during drying and pyrolysis are treated in an also newly developed thermal oxidizer, which uses an innovative, electrically heated design instead of a traditional natural gas- or fuel oil secondary combustion chamber design. After passing through the thermal oxidizer, the gases are cooled down to saturation temperature and treated in the wet scrubbing system. An extraction fan keeps the system under negative pressure to prevent the possibility of any off-gas leakage out of the system. A series of tests were performed successfully with wet cationic resins, anionic resins and a mixture of both. The results of these tests are described in the presentation. For intellectual property protection, the system and process of pyrolysis of organic waste and the system of thermal oxidation of pyrolysis gases described in this paper are patent pending. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2023

Flexible all-organic nanocomposite films interlayered with in situ synthesized covalent organic frameworks for electrostatic energy storage

Poly(vinylidene fluoride)-based terpolymers, known for having the largest dielectric constant among the existing dielectric polymers, are attractive materials for electrostatic film capacitors used in lightweight electrification systems. However, the potential of these terpolymers in film capacitor applications remains constrained by their low electrical insulating and mechanical strengths. To address these limitations, we introduced rigid covalent organic framework (COF) nanospheres into the thin films of soft terpolymers via in situ synthesis and a facile layer-by-layer solution casting method, whereby multilayer films consisting of two polymer outer layers and a COF-containing middle layer were readily obtained. The resultant all-organic thin films exhibit simultaneously high dielectric constant, enhanced breakdown strength, superior energy density (~25 J cm –3 ) at efficiencies over 80%, along with greatly improved mechanical self-supporting capability and excellent mechanical flexibility. Here, this work demonstrates the unprecedented use of COF for electrostatic energy storage, uncovering its potential for flexible electronic applications operating under high electric fields.

25 ENERGY STORAGE↗
DOE OSTI2020

Experimental demonstration of externally driven millimeter-wave particle accelerator structure

We report the experimental demonstration of a mm-wave electron accelerating structure powered by a high-power rf source. We demonstrate reliable coupling of an unprecedented rf power—up to 575kW into the mm-wave accelerator structure using a quasi-optical setup. This standing wave accelerating structure consists of a single-cell copper cavity and a Gaussian to TM 01 mode converter. The accelerator structure is powered by 110 GHz, 10-ns long rf pulses. These pulses are chopped from 3 microsecond pulses from a gyrotron oscillator using a laser-driven silicon switch. We show an unprecedented high gradient up to 230MV/m that corresponds to a peak surface electric field of more than 520 MV/m. We have achieved these results after conditioning the cavity with more than 100,000 pulses. We also report preliminary measurements of rf breakdown rates, which are important for understanding rf breakdown physics in the millimeter-wave regime. Furthermore, these results open up many frontiers for applications not only limited to the next generation particle accelerators but also x-ray generation, probing material dynamics, and nonlinear light-matter interactions at mm-wave frequency.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Effect of an external electric field on the dynamics and intramolecular structures of ions in an ionic liquid

Simulations of the ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide in an external electric field have been performed using a Drude particle polarizable force field. The structure of the ions has been analyzed, with close attention paid to the configurations of the ions. The “charge arm” concept is used to explain certain changes of these configurations that would be difficult to rationalize otherwise, e.g., trans → cis isomerization of the bis(trifluoromethylsulfonyl)imide anion and extension of the alkyl chain of the cation. It has also been shown that the ions orient themselves so that their charge arms align with and stretch out along the field, and these effects occur at lower external electric field strengths than cause a change in the inherent diffusion of the ions. Here, the dynamics of the system parallel and perpendicular to the field were analyzed, and it was found that the applied field affected the diffusion normal to the field. This is explained as a secondary effect of a change in the ion cage formed by the surrounding counterions of a given ion in the ionic liquid. The breakdown of the ion cages was rationalized by correlating changes to the inherent diffusion of the ions with other changes to the diffusion and bulk structure of the liquid, as well as considering the average forces on the ions compared to the force the ions would be expected to experience in an electric field. Parallel to the field, a drift was observed at every electric field studied. In electric fields with no changes to the ion cage structure, the relationship between the drift and electric field was found to be linear, becoming nonlinear as the ion cage structure breaks down.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

NiGa 2 O 4 interfacial layers in NiO/Ga 2 O 3 heterojunction diodes at high temperature

NiO/Ga 2 O 3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga 2 O 3 heterojunction diodes and formation of NiGa 2 O 4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO–Ga 2 O 3 interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO–Ga 2 O 3 interface forms a ternary compound at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa 2 O 4 layer between NiO and Ga 2 O 3 . First-principles defect calculations find that NiGa 2 O 4 shows low p-type intrinsic doping and hence can serve to limit electric field crowding at the interface. Vertical NiO/ Ga 2 O 3 diodes with intentionally grown 5 nm thin spinel-type NiGa 2 O 4 interfacial layers show an excellent device ON/OFF ratio of >10 10 (± 3 V), V ON of ~1.9 V, and increased breakdown voltage of ~1.2 kV for an initial unoptimized 300 lm diameter device. These p–n heterojunction diodes are promising for high-voltage, high temperature applications.

30 DIRECT ENERGY CONVERSION↗