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NASA NTRS2002

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC 11) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC "Pop-Up" Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(Registered Trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the CalTech Submillimeter Observatory (CSO) are presented.

Voellmer, George M.↗

NASA NTRS2002

Structural Acoustic Response of a Shape Memory Alloy Hybrid Composite Panel (Lessons Learned)

This study presents results from an effort to fabricate a shape memory alloy hybrid composite (SMAHC) panel specimen and test the structure for dynamic response and noise transmission characteristics under the action of thermal and random acoustic loads. A method for fabricating a SMAHC laminate with bi-directional SMA reinforcement is described. Glass-epoxy unidirectional prepreg tape and Nitinol ribbon comprise the material system. Thermal activation of the Nitinol actuators was achieved through resistive heating. The experimental hardware required for mechanical support of the panel/actuators and for establishing convenient electrical connectivity to the actuators is presented. Other experimental apparatus necessary for controlling the panel temperature and acquiring structural acoustic data are also described. Deficiency in the thermal control system was discovered in the process of performing the elevated temperature tests. Discussion of the experimental results focuses on determining the causes for the deficiency and establishing means for rectifying the problem.

Turner, Travis L.↗

NASA NTRS2002

SHARC II: A Caltech Submillimeter Observatory Facility Camera with 384 Pixels

SHARC II is a background-limited 350 micron and 450 micron facility camera for the Caltech Submillimeter Observatory undergoing commissioning in 2002. The key component of SHARC II is a 12 x 32 array of doped silicon 'pop-up' bolometers developed at NASA/Goddard. Each 1 mm x 1 mm pixel is coated with a 400 Omega/square bismuth film and located lambda/4 above a reflective backshort to achieve greater than 75% absorption efficiency. The pixels cover the focal plane with greater than 90% filling factor. At 350 microns, the SHARC II pixels are separated by 0.65 lambda/D. In contrast to the silicon bolometers in the predecessor of SHARC II, each doped thermistor occupies nearly the full area of the pixel, which lowers the 1/f knee of tile detector noise to less than 0.03 Hz, under load, at tile bath temperature of 0.36 K. The bolometers are AC-biased and read in 'total power' mode to take advantage of the improved stability. Each bolometer is biased through a custom approx. 130 MOmega CrSi load resistor at 7 K and read with a commercial JFET at 120 K. The JFETs and load resistors are integrated with the detectors into a single assembly to minimize microphonic noise. Electrical connection across the 0.36 K to 4 K and 4 K to 120 K temperature interfaces is accomplished with lithographed metal wires on dielectric substrates. In the best 25% of winter nights on Mauna Kea, SHARC II is expected to have an NEFD at 350 micron of 1 Jy Hz(sup -1/2) or better. The new camera should be at least 4 times faster at detecting known point sources and 30 times faster at mapping large areas compared to the prior instrument.

Dowell, C. Darren↗

NASA NTRS2002

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC 'Pop-up' Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Voellmer, George M.↗

NASA NTRS2003

Investigation of Celestial Solid Analogs

Our far infrared studies of both hydrophobic and hydrophilic aerogel grains have demonstrated that the mm and sub-mm wave absorption produced by the fundamental two level systems (TLS) mechanism represents a more significant contribution for these open grain structures than for bulk amorphous silicate grains. We found that the region with the anomalous temperature dependence of the spectral index due to the TLS excitations can extend in a fluffy material up to 80 per cm, which is well beyond its typical upper limit for bulk glasses. Currently there is no theoretical explanation for this surprising result. The effects of reduced dimensionality on the optical properties of carbonaceous grains have been studied with a systematic investigation of carbon aerogels. This spectroscopic approach has permitted a more reliable determination of the single grain mass normalized absorption coefficient based on the experimentally determined characteristics of the fluffy material rather than on first principles calculations involving the bulk properties of the substance. Our finding is that the electrical connectivity of the material is the main factor affecting its far infrared absorption coefficient. Another one of the main constituents of the interstellar dust, amorphous ice, has been investigated in the mm-wave region both in the high (HDA) and low (LDA) density amorphous phases and as a function of impurities. We found that doping either phase with ionic (LiCl) or molecular (methanol) impurities decreases the difference in the mm-wave absorption coefficient between the HDA and LDA ice phases so that the HDA spectrum can be used as an analog for impure ice absorption in the far infrared spectral region.

Sievers, A. J.↗

NASA NTRS1994

NASA Ultra-Sensitive Miniature Accelerometer

Using micro-machined silicon technology, an ultra-sensitive miniature acce.,rometer can be constructed which meets the requirements for microgravity experiments in the space environment.Such an accelerometer will have a full scale sensitivity of 1C2 g a resolution of lC8 g, low cross axis sensitivity, and low temperature sensitivity. Mass of the device is approximately five grams and its footprint is 2 cm x 2 cm. Innovative features of the accelerometer, which are patented, are: electrostatic caging to withstand handling shock up to 150 g, in-situ calibration, in situ performance characterization, and both static and dynamic compensation. The transducer operates on a force balance principle wherein the displacement of the proof mass is monitored by measuring tunneling electron current flow between a conductive tip, and a fixed platen. The four major parts of the accelerometer are tip die, incorporating the tunneling tip and four field plates for controlling pitch and roll of the proof mass; two proof mass dies, attached to the surrounding frame by sets of four leg" springs; and a force plate die. The four parts are fuse-bonded into a complete assembly. External electrical connections are made at bond pads on the front surface of the force plate die. Materials and processes used in the construction of the transducer are compatible with volume production.

Zavracky, Paul M.↗

NASA NTRS2004

Grid Sphere Electrodes used for Current Collection at the Positive Pole of Electrodynamic Tethers

The generation of either electrical power or propulsive thrust with an electrodynamic tether system necessarily depends on driving a return current through the system's ambient space plasma environment. An electrical connection is, therefore, required between the plasma and each end of the tether. The voltage required to drive current through the system is derived either from the orbital motion of the conducting tether through the magnetic field of the Earth, or from a high-voltage power supply that taps into an external energy source (e.g., the sun). In either case, one end of the tether will receive a positive bias. This positive bias, between the tether and the ambient plasma, allows electrons to be collected effectively with a simple, passive electrode. Passive electrode contactors offer several important advantages, including simplification of the upper end-body design and operations, minimization of system mass, and an increase of system reliability and robustness. A preliminary analysis of an inflatable Grid-Sphere end-body concept is presented that is interesting because of the potential for collecting arbitrarily large currents independent of tether length, while the device has the physical characteristics of a high area-to-mass ratio, a low drag coefficient, and simplicity. In particular, we will discuss the physics of current collection by a biased Grid-Sphere and the present state-of-the-art of materials, attainable area-to-mass ratios, and deployment techniques.

Stone, N. H.↗

NASA NTRS2002

Characterization of electrochemically deposited polypyrrole using magnetoelastic material transduction elements

Magnetoelastic alloy films have been used as a working electrode in an electrochemical cell. This material allows magnetic interrogation of electrochemical deposition. This technique was used to monitor the electrochemical deposition of polypyrrole by multisweep (CV) and potentiostatic methods. Since the determination of the mass-sensitive magnetoelastic film's resonance frequency is based on magnetic transduction, an inherent advantage of this method is that it requires no electrical connections other than the working lead of the potentiostat. Increases in pyrrole deposition correlated with a decrease in the peak resonance frequency of the magnetoelastic alloy. This technique provides a novel approach by which one can monitor electrochemical processes.

NASA Discipline Life Sciences Technologies↗

NASA NTRS2005

Microelectromechanical Systems Actuator Based Reconfigurable Printed Antenna

A polarization reconfigurable patch antenna is disclosed. The antenna includes a feed element, a patch antenna element electrically connected to the feed element, and at least one microelectromechanical systems (MEMS) actuator, with a partial connection to the patch antenna element along an edge of the patch antenna element. The polarization of the antenna can be switched between circular polarization and linear polarization through action of the at least one MEMS actuator.

Simons, Rainee N.↗

NASA NTRS1997

High-Temperature Adhesive Strain Gage Developed

Researchers at the NASA Lewis Research Center have developed a unique strain gage and adhesive system for measuring the mechanical properties of polymers and polymer composites at elevated temperatures. This system overcomes some of the problems encountered in using commercial strain gages and adhesives. For example, typical commercial strain gage adhesives require a postcure at temperatures substantially higher than the maximum test temperature. The exposure of the specimen to this temperature may affect subsequent results, and in some cases may be higher than the glass-transition temperature of the polymer. In addition, although typical commercial strain gages can be used for short times at temperatures up to 370 C, their long-term use is limited to 230 C. This precludes their use for testing some high-temperature polyimides near their maximum temperature capability. Lewis' strain gage and adhesive system consists of a nonencapsulated, unbacked gage grid that is bonded directly to the polymer after the specimen has been cured but prior to the normal postcure cycle. The gage is applied with an adhesive specially formulated to cure under the specimen postcure conditions. Special handling, mounting, and electrical connection procedures were developed, and a fixture was designed to calibrate each strain gage after it was applied to a specimen. A variety of tests was conducted to determine the performance characteristics of the gages at elevated temperatures on PMR-15 neat resin and titanium specimens. For these tests, which included static tension, thermal exposure, and creep tests, the gage and adhesive system performed within normal strain gage specifications at 315 C. An example of the performance characteristics of the gage can be seen in the figure, which compares the strain gage measurement on a polyimide specimen at 315 C with an extensometer measurement.

Pereira, J. Michael↗

NASA NTRS2004

Buffer Layer Effects on Tandem InGaAs TPV Devices

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

Wilt, David M.↗

NASA NTRS2003

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.

Beheim, Glenn M.↗

NASA NTRS2005

Characterization of Dual-Band Infrared Detectors for Application to Remote Sensing

NASA Langley Research Center (LaRC), in partnership with the Rensselaer Polytechnic Institute (RPI), developed photovoltaic infrared (IR) detectors suitable at two different wavelengths using Sb-based material systems. Using lattice-matched InGaAsSb grown on GaSb substrates, dual wavelength detectors operating at 1.7 and 2.5 micron wavelengths can be realized. P-N junction diodes are fabricated on both GaSb and InGaAsSb materials. The photodiode on GaSb detects wavelengths at 1.7 micron and the InGaAsSb detector detects wavelengths at 2.2 micron or longer depending on the composition. The films for these devices are grown by metal-organic vapor phase epitaxy (MOVPE). The cross section of the independently accessed back-to-back photodiode dual band detector consists of a p-type substrate on which n-on-p GaInAsSb junction is grown, followed by a p-on-n GaSb junction. There are three ohmic contacts in this structure, one to the p-GaSb top layer, one to the n-GaSb/n-GaInAsSb layer and one to the p-type GaSb substrate. The common terminal is the contact to the n-GaSb/n-GaInAsSb layer. The contact to the n-GaSb/p-GaInAsSb region of the photodiode in the dual band is electrically connected and is accessed at the edge of the photodiode. NASA LaRC acquired the fabricated dual band detector from RPI and characterized the detector at its Detector Characterization Laboratory. Characterization results, such as responsivity, noise, quantum efficiency, and detectivity will be presented.

Abedin, M. Nurul↗

NASA NTRS2005

Investigation of Ruthenium Dissolution in Advanced Membrane Electrode Assemblies for Direct Methanol Based Fuel Cell Stacks

Dissolution of ruthenium was observed in the 80-cell stack. Duration testing was performed in single cell MEAs to determine the pathway of cell degradation. EDAX analysis on each of the single cell MEAs has shown that the Johnson Matthey commercial catalyst is stable in DMFC operation for 250 hours, no ruthenium dissolution was observed. Changes in the hydrophobicity of the cathode backing papers was minimum. Electrode polarization analysis revealed that the MEA performance loss is attributed to changes in the cathode catalyst layer. Ruthenium migration does not seem to occur during cell operation but can occur when methanol is absent from the anode compartment, the cathode compartment has access to air, and the cells in the stack are electrically connected to a load (Shunt Currents). The open-to-air cathode stack design allowed for: a) The MEAs to have continual access to oxygen; and b) The stack to sustain shunt currents. Ruthenium dissolution in a DMFC stack can be prevented by: a) Developing an internally manifolded stacks that seal reactant compartments when not in operation; b) Bringing the cell voltages to zero quickly when not in operation; and c) Limiting the total number of cells to 25 in an effort to limit shunt currents.

alternative power sources↗

NASA NTRS2007

Design and Fabrication Highlights Enabling a 2 mm, 128 Element Bolometer Array for GISMO

The Backshort-Under-Grid (BUG) superconducting bolometer array architecture is intended to be highly versatile, operating in a large range of wavelengths and background conditions. We have undertaken a three-year program to develop key technologies and processes required to build kilopixel arrays. To validate the basic array design and to demonstrate its applicability for future kilopixel arrays, we have chosen to demonstrate a 128 element bolometer array optimized for 2 mm wavelength using a newly built Goddard instrument, GISMO (Goddard /RAM Superconducting 2-millimeter Observer). The arrays are fabricated using batch wafer processing developed and optimized for high pixel yield, low noise, and high uniformity. The molybdenum-gold superconducting transition edge sensors are fabricated using batch sputter deposition and are patterned using dry etch techniques developed at Goddard. With a detector pitch of 2 mm 8x16 array for GISMO occupies nearly one half of the processing area of a 100 mm silicon-on-insulator starting wafer. Two such arrays are produced from a single wafer along with witness samples for process characterization. To provide thermal isolation for the detector elements, at the end of the process over 90% of the silicon must be removed using deep reactive ion etching techniques. The electrical connections for each bolometer element are patterned on the top edge of the square grid supporting the array. The design considerations unique to GISMO, key fabrication challenges, and laboratory experimental results will be presented.

Allen, Christine↗

NASA NTRS2007

Fabrication of a Thermally Isolated and Pre-amplified Transistor Module with Polyimide Micro-wires for Cryogenic Detectors

For use in cryogenic applications such as bolometer and x-ray microcalorimeter arrays, pre-amplifying Junction Field Effect Transistors (JFETs) are often required for the readout electronics. The optimum operating temperature of the JFETs is 130 Kelvin while the cryogenic detectors operate in the milli-Kelvin range. Thus, the JFETs must be heated up but thermally isolated from the surrounding cryogenic instruments. In the past, the thermal isolation was accomplished by suspending the JFETs with low conductance wires such as manganium or stainless steel on a Kevlar support platform [I]. This also achieved electrical connections. However, this assembly required manual soldering work, which could raise a reliability issue for the cryogenic applications. In order to eliminate the manual work, polyimide micro-wires were developed [2]. The wires must be of sufficient length to decrease the heat load and in tension to prevent microphonic noise from vibration of the wires: the polyimide wires were patterned into llS"shaped curves over a thin metal wires such as aluminum, titanium, or niobium. The bilayer of the films were then suspended by etching silicon substrate thus to make freestanding air bridges (enough explanation?). In this paper, we present a method to fabricate micromachined JFET mechanical modules suspended by polyimide Pyraline micro-wires and heated up with built-in aluminum micro-heaters.

Oh, L. H.↗

NASA NTRS2001

Sensors for detecting analytes in fluids

Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

Lewis, Nathan S.↗

NASA NTRS1999

Sensors for detecting analytes in fluids

Lewis, Nathan S.↗