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At least 199 records · Page 11

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.

Alterovitz, S. A.↗

Low-pressure clathrate-hydrate formation in amorphous astrophysical ice analogs

In modeling cometary ice, the properties of clathrate hydrates were used to explain anomalous gas release at large radial distances from the Sun, and the retention of particular gas inventories at elevated temperatures. Clathrates may also have been important early in solar system history. However, there has never been a reasonable mechanism proposed for clathrate formation under the low pressures typical of these environments. For the first time, it was shown that clathrate hydrates can be formed by warming and annealing amorphous mixed molecular ices at low pressures. The complex microstructures which occur as a result of clathrate formation from the solid state may provide an explanation for a variety of unexplained phenomena. The vacuum and imaging systems of an Hitachi H-500H Analytical Electron Microscope was modified to study mixed molecular ices at temperatures between 12 and 373 K. The resulting ices are characterized by low-electron dose Transmission Electron Microscopy (TEM) and Selected Area Electron Diffraction (SAED). The implications of these results for the mechanical and gas release properties of comets are discussed. Laboratory IR data from similar ices are presented which suggest the possibility of remotely observing and identifying clathrates in astrophysical objects.

Blake, D. F.↗

The structure of carbon in chemically vapor deposited SiC monofilaments

Electron diffraction and high resolution TEM have been used to study the microstructures of C-rich regions in CVD SCS-6 SiC fibers. The reciprocal lattice of such structures, and their diffraction patterns, have been ascertained on the basis of geometrical considerations. While the C microstructures in the substrate filament and the outer coating layers of the fabric are consistent with different distributions of Oberlin's (1989) 'basic structural units', the microstructure of the inner substrate coating is consistent with turbostratic C.

Ning, X. J.↗

Collection of microparticles at high balloon altitudes in the stratosphere

Stratospheric particles were collected between 34 and 36 km, using a combination of cascade impactors and filters lofted by a large helium balloon, and the particle concentration, size distribution, and bulk elemental composition were determined using SEM and proton-induced X-ray emission (PEXE) instrument. In addition, datailed particle morphology, elemental analysis, and electron diffraction data were obtained on 23 particles using a TEM. The concentration of particles between 0.045 and 1.0 micron in radius was found to be orders of magnitude above the concentrations predicted by the model of Hunten et al. (1980), but was consistent with balloon and satellite observations. Elemental composition analysis showed the presence of Cl, S, Ti, Fe, Br, Ni, Zr, Zn, Sr, and Cu in decreasing order of concentration. The 23 particles analyzed by TEM ranged from Al-rich silicates to almost pure Fe to one containing almost exclusively Ba and S. None were definitely chondritic in composition.

Testa, John P., Jr.↗

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

Xing, G. C.↗

Rapid solidification of polymorphic transition metals induced by nanosecond laser pulses

An Nd-YAG laser giving 5 ns, 266 nm pulses was used to melt and subsequently quench thin, pure metallic films on a liquid Al/Al2O3 substrate at 10 to the 10th - 10 to the 12th K/s. Transmission electron microscopy together with electron diffraction was used to study the competitive nucleation and growth behavior of the crystals from the undercooled melt. In the case of Fe and Co, the high-temperature bcc and fcc structures were retained after laser quenching. Ti and Zr in spite of the structural similarities exhibit different preferences for nucleation from the undercooled melt. In all the metals the solid-state transformations were completely suppressed and the crystal growth was found to be limited by the collisional frequency of the atoms onto the growing interface.

Vitta, Satish↗

Clay minerals in primitive meteorites and interplanetary dust 2. Smectites and micas

The classification is briefly summarized of stony meteorites and cosmic dust, and the mineralogy and chemistry is described of serpentine group minerals. The occurrence of smectites and micas in extraterrestrial materials is examined. The characterization of fine grained minerals in meteorites and IDPs relies heavily on electron beam instruments, especially the transmission electron microscope (TEM). Typically, phyllosilicates are identified by a combination of high resolution imaging of basal spacings, electron diffraction, and chemical analysis. Smectites can be difficult to differentiate from micas because the smectites lose their interlayer water and the interlayer partly collapse in the high vacuum of the TEM.

Keller, L. P.↗

Iddingsite in the Nakhla meteorite: TEM study of mineralogy and texture of pre-terrestrial (Martian?) alterations

Rusty-colored veinlets and patches in the Nakhla meteorite, identified as iddingsite, are pre-terrestrial. The rusty material is iddingsite (smectites + hematite + ferrihydrite); like terrestrial iddingsites, it probably formed during low-temperature interaction of olivine and water. Fragments of rusty material with host olivine were removed from thin sections of Nakhla with a tungsten needle. Fragments were embedded in epoxy, microtomed to 100 nanometers thickness, and mounted on Cu grids. Phase identifications were by Analytical Electron Microscopy/Energy Dispersive X-ray Analysis (EM/EDX) standardless chemical analyses (for silicates), electron diffraction (hematite and ferrihydrite), and lattice fringe imaging. This iddingsite in Nakhla is nearly identical to some formed on Earth, suggesting similar conditions of formation on the Shergottites-Nakhlites-Chassigny (SNC) meteorite parent planet. A more detailed account of the results is presented.

Treiman, Allan H.↗

A new ordered tetragonal phase in the Ti3Al+Nb system

Results are reported from an experimental study of phase stability in a plasma-sprayed Ti3Al+Nb alloy using TEM and electron diffraction techniques. The alloys was produced from Ti3Al+Nb powder via an inductively coupled plasma deposition process. Evidence was found for the ordering of the B2 phase to a structure similar to the DO3-type phase, but with a tetragonal distortion. An ordered tetragonal phase (T) is proposed to account for these observations, and the existence of the B2 - T ordering transformation in the Ti3Al+Nb system is suggested. The T phase can be regarded as a DO3-like phase with a tetragonal distortion. The tegragonality c0/a0 is approximately equal to 1.02, and a0 equals 0.65 +/-0.01 nm.

Hsiung, L. M.↗

Structural relationships between the T and O phases in Ti-24Al-11Nb

TEM and electron diffraction are presently used to characterize the structural relationships between the ordered tetragonal (T) and ordered orthorhombic (O) phases of a rapidly solidified Ti-24Al-11Nb alloy. It is established that the transition from the T to the O phase is explainable in terms of a shape-deformation mechanism, and that the T/O interface (habit) plane approximates -2 2 3 sub T. Attention is given to the orientation relationships between the two phases.

Hsiung, L. M.↗

Microstructural investigations of light-emitting porous Si layers

The structural and morphological characteristics of visible-light-emitting porous Si layers produced by anodic and stain etching of single-crystal Si substrates are compared using transmission electron microscopy and atomic force microscopy (AFM). AFM of conventionally anodized, laterally anodized and stain-etched Si layers show that the layers have a fractal-type surface morphology. The anodized layers are rougher than the stain-etched films. At higher magnification 10 nm sized hillocks are visible on the surface. Transmission electron diffraction patterns indicate an amorphous structure with no evidence for the presence of crystalline Si in the near-surface regions of the porous Si layers.

George, T.↗

Nonequilibrium synthesis of NbAl3 and Nb-Al-V alloys by laser cladding. I - Microstructure evolution

The evolution of the microstructure in NbAl3 synthesized by a laser cladding technique (a rapid solidification process, with cooling rates up to 10 exp 6 C/sec) is investigated, and the phases are identified using convergent beam electron diffraction. Two new metastable phases were identified and characterized in detail. The effect of adding V on the final microstructure was also investigated, and the various phase chemistries and the partitioning of different elements into different phases were studied.

Sircar, S.↗

Phase transformations in 40-60-GPa shocked gneisses from the Haughton Crater (Canada): An Analytical Transmission Electron Microscopy (ATEM) study

In order to better understand phase transformations, chemical migration, and isotopic disequilibrium in highly shocked rocks, we have performed a microprobe and an ATEM study on gneisses shocked up to 60 GPa from the Haughton Crater. This study reveals the following chemical and structural characteristics: (1) SiO2 dominant areas are formed by a mixture of pure SiO2 polycrystalline quartz identified by electron diffraction pattern and chemical analysis and a silica-rich amorphous phase containing minor amounts of aluminium, potassium, and iron; (2) Areas with biotitelike composition are formed by less than 200-nm grains of iron-rich spinels embedded in a silica-rich amorphous phase that is very similar to the one described above; (3) Layers with feldsparlike composition are constituted by 100-200-nm-sized alumina-rich grains (the indexation of the crystalline structure is under progress) and the silica-rich amorphous phase; (4) Zones characterized by the unusual Al/Si ratio close to 1 are formed by spinel grains (200-nm-sized) embedded in the same silica-rich amorphous phase; and (5) The fracturated sillimanites contain domains with a lamellar structure, defined by the intercalation of 100-nm-wide lamellae of mullite crystals and of a silica-rich amorphous phase. These mullite crystals preserved the crystallographical orientation of the preshock sillimanite. All compositional domains, identified at the microprobe scale, can thus be explained by a mixture in different proportion between the following phases: (1) a silica-rich amorphous phase, with minor Al and K; (2) quartz crystals; (3) spinel crystals and alumina-rich crystals; (4) sillimanite; and (5) mullite. Such mixtures of amorphous phases and crystals in different proportions explain disturbed isotope systems in these rocks and chemical heterogeneities observed on the microprobe.

Martinez, I.↗

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗

Beneficiation of ilmenite from lumar analog

The results reported were obtained on a meteoric eucrite sample called Millbillillie Sample no. 173. Optical microscopy studies of the sample showed it to consist of ilmenite, troilite, and transparent gangue. The transparent gangue consisted of feldspar (anorthite), pyroxenes, olivines, and opaques. Troilite was present in minor quantities. Screen assay analyses of the 30, 100, 200, and 400 US mesh screen fractions showed that minor concentration of titanium occurred in the 200 x 400 and -400 mesh screen fractions. Scanning electron microscopy (SEM) studies of the bulk sample showed the presence of a variety of ilmenite grains, ranging from 50 microns down to less than 1 micron without any evidence of liberation. Electron Diffraction Scans (EDS) confirmed the ratio of Fe to Ti in the ilmenite grains. Dry magnetic separation in a Frantz Isodynamic Separator was found to be effective only at sizes finer than 150 microns (100 US mesh) and more so at 200 mesh (74 microns). In each case, dedusting of the sample to remove -400 mesh (-0.037 microns) fines was required. Liberation size was determined to be 200 mesh and finer. The highest grade concentrate assaying 3.45 percent Ti was produced by magnetic separation of the -200 + 400 mesh screen fraction assaying 0.44 Ti (from a -30 mesh sample) at a current setting of 0.35 AMP. This concentrate contained 21.2 percent of the Ti values in the screen fraction with 2.72 weight percent of feed to test. The results can be projected to a sample stage ground to -200 mesh. Magnetic separation of the 200 + 400 mesh (-0.074 + 0.037 microns) should produce a concentrate accounting for 1.41 weight percent of the feed. This concentrate will analyze 3.45 percent Ti and contain 10.3 percent of the Ti values in the feed. By changing the Frantz Magnetic Separator settings, a lower grade concentrate analyzing 0.98 percent Ti can be produced at an increased recovery of 25.4 percent. The concentrate weight will be 11.7 percent of the feed. It must be emphasized that improved grades and recoveries can be obtained with the -400 mesh fines. However, beneficiation of these extremely fine materials is not possible in a practical process scheme.

Ramadorai, G.↗

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗

Changes Found on Run-In and Scuffed Surfaces of Steel Chrome Plate, and Cast Iron

A study was made of run-in and scuffed steel, chrome-plate, and cast-iron surfaces. X-ray and electron diffraction techniques, micro-hardness determinations, and microscopy were used. Surface changes varied and were found to include three classes: chemical reaction, hardening, and crystallite-size alteration. The principal chemical reactions were oxidation and carburization.

IRON, CAST - WEAR RESISTANCE↗

Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates

The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.

Xing, G. C.↗