Search NASA⌕ Search

SEARCH · Search NASA

Results for “fill factor”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

The integrated radio continuum spectrum of M33 - Evidence for free-free absorption by cool ionized gas

We present measurements of the integrated radio continuum flux density of M33 at frequencies between 22 and 610 MHz and discuss the radio continuum spectrum of M33 between 22 MHz and 10 GHz. This spectrum has a turnover between 500 and 900 MHz, depending on the steepness of the high frequency radio spectrum of M33. Below 500 MHz the spectrum is relatively flat. We discuss possible mechanisms to explain this spectral shape and consider efficient free-free absorption of nonthermal emission by a cool (not greater than 1000 K) ionized gas to be a very likely possibility. The surface filling factor of both the nonthermal and the thermal material appears to be small (of order 0.001), which could be explained by magnetic field/density fluctuations in the M 33 interstellar medium. We briefly speculate on the possible presence of a nuclear radio source with a steep spectrum.

Israel, F. P.↗
NASA NTRS1993

InGaAs concentrator cells for laser power converters and tandem cells

In(0.53)Ga(0.47)As N-on-P concentrator cells were made as part of an effort to develop 1.315 micron laser power converters. The 1.315 micron laser power conversion efficiency was estimated as 29.4 percent (at 5.57 W/cm(sup 2)) based on an 86 percent measured external quantum efficiency at 1.315 microns, and a measured open circuit voltage (484 mV), and fill-factor (67 percent) at the equivalent AM0 short-circuit photocurrent (5.07 A/cm(sup 2)). A 13.5 percent percent AMO efficiency was achieved at 89 suns and 25 C. Measured one-sun and 100-sun AMO efficiency, log I-V analysis, and quantum efficiency are presented for InGaAs cells with and without InP windows to passivate the front surface. Windowed cells performed better at concentration than windowless cells. Lattice mismatch between InGaAs epilayers and InP substrate was less than 800 ppm. Theoretical efficiency is estimated for 1.315 microns laser power converters versus the bandgap energy. Adding aluminum to InGaAs to form In(x)Al(y)Ga(1-x-y)As is presented as a way to achieve an optimal bandgap for 1.315 microns laser power conversion.

Wojtczuk, S.↗
NASA NTRS1993

TAB interconnects for space concentrator solar cell arrays

The Boeing Company has evaluated the use of Tape Automated Bonding (TAB) and Surface Mount Technology (SMT) for a highly reliable, low cost interconnect for concentrator solar cell arrays. TAB and SMT are currently used in the electronics industry for chip interconnects and printed circuit board assembly. TAB tape consists of sixty-four 3-mil/1-oz tin-plated copper leads on 8-mil centers. The leads are thermocompression gang bonded to GaAs concentrator solar cell with silver contacts. This bond, known as an Inner Lead Bond (ILB), allows for pretesting and sorting capability via nondestruct wire bond pull and flash testing. Destructive wire pull tests resulted in preferred mid-span failures. Improvements in fill factor were attributed to decreased contact resistance on TAB bonded cells. Preliminary thermal cycling and aging tests were shown excellent bond strength and metallurgical results. Auger scans of bond sites reveals an Ag-Cu-Tin composition. Improper bonds are identified through flash testing as a performance degradation. On going testing of cells are underway at Lewis Research Center. SMT techniques are utilized to excise and form TAB leads post ILB. The formed leads' shape isolates thermal mismatches between the cells and the flex circuit they are mounted on. TABed cells are picked and placed with a gantry x-y-z positioning system with pattern recognition. Adhesives are selected to avoid thermal expansion mismatch and promote thermal transfer to the flex circuit. TAB outer lead bonds are parallel gap welded (PGW) to the flex circuit to finish the concentrator solar cell subassembly.

Avery, J.↗
NASA NTRS1993

Review of rigorous coupled-wave analysis and of homogeneous effective medium approximations for high spatial-frequency surface-relief gratings

A review of the rigorous coupled-wave analysis as applied to the diffraction of electro-magnetic waves by gratings is presented. The analysis is valid for any polarization, angle of incidence, and conical diffraction. Cascaded and/or multiplexed gratings as well as material anisotropy can be incorporated under the same formalism. Small period rectangular groove gratings can also be modeled using approximately equivalent uniaxial homogeneous layers (effective media). The ordinary and extraordinary refractive indices of these layers depend on the gratings filling factor, the refractive indices of the substrate and superstrate, and the ratio of the freespace wavelength to grating period. Comparisons of the homogeneous effective medium approximations with the rigorous coupled-wave analysis are presented. Antireflection designs (single-layer or multilayer) using the effective medium models are presented and compared. These ultra-short period antireflection gratings can also be used to produce soft x-rays. Comparisons of the rigorous coupled-wave analysis with experimental results on soft x-ray generation by gratings are also included.

Glytsis, Elias N.↗
NASA NTRS1993

Theory of dispersive microlenses

A dispersive microlens is a miniature optical element which simultaneously focuses and disperses light. Arrays of dispersive mircolenses have potential applications in multicolor focal planes. They have a 100 percent optical fill factor and can focus light down to detectors of diffraction spot size, freeing up areas on the focal plane for on-chip analog signal processing. Use of dispersive microlenses allows inband color separation within a pixel and perfect scene registration. A dual-color separation has the potential for temperature discrimination. We discuss the design of dispersive microlenses and present sample results for efficient designs.

Herman, B.↗
NASA NTRS1994

The three-dimensional structure of the infrared cirrus

This project was carried out over a period of four years, beginning 6/15/89 and continuing through 9/15/93. Intermediate results have been reported as poster papers at several meetings of the American Astronomical Society. A brief summary was presented in April 1993 at a symposium on the infrared cirrus. The final results were published in late 1993. The measurements have been deposited in NASA's Astronomical Data Center. Briefly, the results are as follows: Using the IRAS data base, we surveyed the 1808 06-B9.5 stars in the Bright Star Catalog for extended excess emission at 60 micrometers, indicating the presence of heated dust (cirrus hotspots) at the location of the star. Measurements of the angular size and infrared flux at 12, 25, 60 and 100 micrometers were obtained for 302 objects. From these basic data we calculated the radius, absorption, optical depth, color temperature, and dust density for each object. Arguing that the stars are randomly distributed point probes of the ISM, we showed that the filling factor of the dust-bearing component of the ISM is 14.6 + 2.4 percent within 400 pc of the sun for clouds with an equivalent hydrogen density greater than 0.5 cm(exp -3). Above a density of 1.0 cm(exp -3) the density distribution function appears to follow a power law of index -1.25. Further, we showed that the dust is distributed more sparsely in a region near the sun about 60 pc wide and extending several hundred parsecs in the direction of longitudes 80-260 deg. The distances to the dust clouds were determined from the spectroscopic parallaxes of the embedded stars; when the HIPPARCOS parallaxes become available, we will be able to produce a more accurate three-dimensional view of the local ISM.

Gaustad, John E.↗
NASA NTRS1994

High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

Hoffman, Richard W., Jr.↗
NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗
NASA NTRS1994

Development of a lightweight, light-trapped, thin GaAs solar cell for spacecraft applications

This paper describes ultra-lightweight, high performance, thin, light trapping GaAs solar cells for advanced space power systems. The device designs can achieve 24.5 percent efficiency at AMO and 1X conditions, corresponding to a power density of 330 W/m2. A significant breakthrough lies in the potential for a specific power of 2906 W/kg because the entire device is less than 1.5 microns thick. This represents a 440 percent improvement over conventional 4-mil silicon solar cells. In addition to being lightweight, this thin device design can result in increased radiation tolerance. The attachment of the cover glass support to the front surface has been demonstrated by both silicone and electrostatic bonding techniques. Device parameters of 1.002 volts open-circuit voltage, 80 percent fill factor, and a short-circuit current of 24.3 mA/sq cm have been obtained. This demonstrates a conversion efficiency of 14.4 percent resulting in a specific power of 2240 W/kg. Additionally, this new technology offers an alternative approach for enabling multi-bandgap solar cells and high output space solar power devices. The thin device structure can be applied to any 3-5 based solar cell application, yielding both an increase in specific power and radiation tolerance.

Hannon, Margaret H.↗
NASA NTRS1994

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

Cotal, H. L.↗
NASA NTRS1994

P/N In(Al) GaAs multijunction laser power converters

Eight In(AI)GaAs PN junctions grown epitaxially on the semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converted (LPC) chip. Advantages of multijunction LCP designs include the need for less circuitry for power reconditioning and the potential for lower I(sup 2)R power loss. As an example, these LPC's have a responsivity of approximately 1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cm short-circuit current at approximately 0.4V open-cicuit voltage. One disadvantage is the large current would lead to a large I(sup 2)R loss which would lower the fill factor so that 40 watts/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approximately 3V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the I(sup 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPC's) were made in two different compositions of the In(x)Al(y)Ga(1-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPC's had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 micron power conversion efficiencies were approximately 22 percent. One key advantage of multijunction LPC's is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.

Wojtczuk, Steven↗
NASA NTRS1994

The interstellar medium in the starburst regions of NGC 253 and NGC 3256

We discuss observations of the (C II) 158 micrometers, (O I) 63 micrometers, (Si II) 35 micrometers, (O III) 52,88 micrometers, and (S III) 33 micrometers fine-structure transitions toward the central 45 seconds of the starburst galaxies NGC 253 and NGC 3256. The (C II) and (O I) emission probably originates in photodissociated gas at the surfaces of molecular clouds, although a small (less than or approximately 30%) contribution to the (C II) flux from H II regions cannot be ruled out. The (O III) and (S III) lines originate in H II regions and the (Si II) flux is best explained as originating in H II regions with some contribution from photodissociation regions (PDRs). The gas phase silicon abundance is nearly solar in NGC 253, which we interpret as evidence for grain destruction in the starburst region. We find that the photodissociated atomic gas has densities approximately 10(exp 4)/cu cm and temperature 200-300 K. About 2% of the gas is in this phase. The thermal gas pressure in the PDRs, P(PDR)/k approximately 1-3 x 10(exp 6) K/cu cm, might represent the 'typical' interstellar gas pressure in starburst systems. The Far Ultraviolet (FUV) radiation fields illuminating the clouds are 10(exp 3)-10(exp 4) stronger than the local Galactic FUV field and come from the contribution of many closely packed O and B stars. For the central 250 pc of NGC 253, we find that the H II gas has an average density n(sub e) is approximately 400/cu cm. This corresponds to a thermal pressure P(H II)/k approximately 7 x 10(exp 6) K/cu cm which is approximately P(PDR)/k, suggesting that the ionized gas is in pressure equilibrium with the photodissociated gas at the surfaces of molecular clouds. The H II gas fills a significant fraction, approximately 0.01-0.3, of the volume between the clouds. The effective temperature of the ionizing stars in NGC 253 is greater than or approximately 34,500 K; 2 x 10(exp 5) O7.5 stars would produce the observed Lyman countinuum photon luminosity. The average separation between the stars is approximately 3 pc. Applying the simple model for the interstellar medium in galactic nuclei of Wolfire, Tielens, & Hollenbach (1990), we find the molecular gas in the central regions of NGC 253 and NGC 3256 to be distributed in a large number (5 x 10(exp 3) to 5 x 10(exp 5)) of small (0.5-2 pc), dense (approximately 10(exp 4)/cu cm) clouds (or alternatively 'thin-flattened' structures) with volume filling factors 10(exp -3) to 10(exp -2), very different from the local Interstellar Medium (ISM) of the Galaxy. We suggest a self-consistent scenario for the ISM in NGC 253 in which clouds and H II gas are in pressure balance with a supernova-shocked, hot 1-3 x 10(exp 6) K, low-density (approximately 10(exp 4)/cu cm), all pervasive medium. A feedback mechanism may be indicated in which the pressure generated by the supernovae compresses the molecular clouds and triggers further massive star formation. The similarity of ISM parameters deduced for NGC 253, NGC 3256, and M82 (Lord et al. 1993) suggests that the ISM properties are independent of the luminosity of the starburst or the triggering mechanism, but are rather endemic to starburst systems. The starburst in NGC 3256 appears to be a scaled-up version of the NGC 253 and M82 starbursts.

Carral, P.↗
NASA NTRS1994

Hopkins Ultraviolet Telescope determination of the Io torus electron temperature

Sulfur ion emissions from the Io plasma torus observed by the Hopkins Ultraviolet Telescope (HUT) in 1990 December have been analyzed to determine the effective temperature of the exciting electrons. Spectra were obtained with a long slit that extended from 3.1 to 8.7 Jupiter radii R(sub J) on both dawn and dusk torus ansae. The average temperature of electrons exciting S(2+) emissions from the dawn ansa is (4800 +/- 2400) K lower than on the dusk ansa, a dawn-dusk asymmetry comparable in both sign and magnitude to that measured by the Voyager Ultraviolet Spectrograph (UVS) experiment. Emissions from S(2+) ions are generated in a source region with electron temperatures in the range 32,000-56,000 K; S(3+) ion emissions are excited by electrons that average 20,000-40,000 K hotter. This distinct difference suggests that the S(3+) emission source region is spatially separate from the S(2+) source region. Estimated relative aperture filling factors suggest that the S(3+) emissions originate from a region more extended out of the centrifugal plane than the S(2+) emissions.

Hall, D. T.↗
NASA NTRS1993

The distribution of interstellar dust in the solar neighborhood

We surveyed the IRAS data base at the positions of the 1808 O6-B9.5 stars in The Bright Star Catalog for extended objects with excess emission at 60 microns, indicating the presence of interstellar dust at the location of the star. Within 400 pc the filling factor of the interstellar medium, for dust clouds with a density greater than 0.5/cu cm is 14.6 + or - 2.4%. Above a density of 1.0/cu cm, the density distribution function appears to follow a power law index - 1.25. When the dust clouds are mapped onto the galactic plane, the sun appears to be located in a low-density region of the interstellar medium of width about 60 pc extending at least 500 pc in the direction of longitudes 80 deg - 260 deg, a feature we call the 'local trough'.

Gaustad, John E.↗
NASA NTRS1995

HST observations of the ring around SN 1987A

Hubble Space Telescope observations of SN 1987A show that the circumstellar material near the supernova forms a clumpy elliptical ring. We analyze six epochs of images made with the Faint Object Camera (FOC) imaging the lines of (O III) and H beta over the interval 1990 August-1993 October, and three epochs of observations with the Planetary Camera in the continuum and (N II) line over the interval 1992 April-1993 May. The elliptical ring in the (O III) images has a semimajor axis of 858 +/- 11 milliarcsec and a semiminor axis of 621 +/- 11 milliarsce (6.4 x 10(exp 17) and 4.6 x 10(exp 17) +/- 8.1 x 10(exp 15) cm, respectively, for a distance of 50 kpc), which implies an inclination angle of 44 +/- 1, if the ring is a circle inclined to our line of sight. The apparent width of the ring in (O III) is 121 +/- 22 milliarcsec (9.0 x 10(exp 16) +/- 1.6 x 10(exp 16) cm) based on our deconvolved image, which represents an upper limit to the width of the of the ring. The position angle of the major axis on the sky is 89 deg +/- 3 deg. One of the 'clumps' on the ring is a superposed star, whose energy distribution is consistent with an A-type dwarf (V = 20.2 mag) in the Large Magellanic Cloud (LMC) The radial profile of the ring is not symmetric, with the inner boundary sharper than the outer. Based on the radial profiles and the flux interior to the ring, we conclude that the ring is indeed a tilted ring, and not a spheroidal shell. While the observed width of the ring is approximately 10(exp 17) cm, we find that the average path length through the emitting gas is approximately 4 x 10(exp 15) cm, so the filling factor is small. The ring has faded by a factor of approximately equals 3.7 in (O III) from 1990 August to 1993 October. The characteristic electron density from the (O III) lambda 5007 emission line averages 1.2 x 10exp 4)/cu cm, based on recombination models of the emission. Because the fading rate is uncorrelated with the surface brightness, the density appears to be independent of the brightness, which implies significant path length differences through the ring. By assuming the current structure observed in optical lines applies to the early structure in ultraviolet lines, we construct light curve models to compare with early IUE observations. The clumpy structure of the ring has relatively little effect on the light curves. The (O III) images show faint arclike nebulosity probably associated with the bipolar nebula around SN 1987A and projected inside the ring, which may have affected previous observations of the ring. Finally, we find that the fading rate provides evidence, though weak, favoring an expanding ring over a contracting one.

Plait, Philip C.↗
NASA NTRS1994

CS multitransitional study of density distribution in star-forming regions. 2: The S140 region

The S140 molecular cloud was observed in five transitions of CS with resolutions of 11 to 45 arcsec. The data were analyzed with both the LVG and microturbulent models of radiative transfer to derive the density structure. It was found that the CS emission comes from three components of gas: a spherical component centered on the infrared cluster, an arc component along the ionization front between the S140 H II region and the dense molecular cloud core, and a high-velocity component from the dense part of a molecular outflow. The spherical component contributes most to the CS emission and was analyzed in more detail than the other components. Using a temperature distribution derived from an analysis of the dust emission from S140, we fit a power-law density distribution of n(r) = n(sub i)(r/r(sub i))(exp -alpha) to the spherical component. The best fit was for n(sub i) = 1.4 x 10(exp 6) (density at r(sub i) = 0.026 pc) and alpha = 0.8. The density (n(sub i)) was found to be greater than or equal to the density required to account for the dust emission, depending on the dust opacity laws adopted. The presence of optical emission (Dinerstein, Lester, & Rank 1979) suggests a clumpy structure for the dense gas. Considerations of the virial mass and the lowest amount of column density required to produce dust emission put the volume filling factor (f(sub nu)) of the dense gas at approximately 0.14-0.5. We compared S140 with other regions of star formation where the density structure has been derived from excitation analysis. Source-source variations in density gradients and clumpiness clearly exist, ranging from alpha = 2 and f(sub nu) approximately 1 in B335 to alpha approximately 0, f(sub nu) approximately 0.1 in M17. There is a tendency for more massive star-forming regions to have a flatter density distribution, a more clumpy structure, and a large number of young stars. The implications of this tendency are discussed.

Zhou, Shudong↗
NASA NTRS1995

Initial results for the silicon monolithically interconnected solar cell product

This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

Dinetta, L. C.↗
NASA NTRS1995

Lightweight, light-trapped, thin GaAs solar cell for spacecraft applications: Progress and results update

Progress is reported with respect to the development of ultra-lightweight, high performance, thin, light trapped GaAs solar cells for advanced space power systems. Conversion efficiencies of over 17.7% have been demonstrated for a 3 micron thick, 1 sq cm silicone bonded solar cell. This results in a specific power of over 1020 W/kg. Device parameters were 1.011 V open circuit voltage, 80% fill factor, and a short-circuit current density of 29.5 mA/sq cm . In addition to silicone bonding, the use of electrostatic bonding to attach the coverglass support to the front surface enables an ultra-thin, all back contact design that survives processing temperatures greater than 750 C. This also results in a 10% reduction of the cell weight for a potential specific power of 1270 W/kg. All back contact, ultra-thin, electrostatically bonded GaAs solar cell prototypes have been completed demonstrating an open circuit voltage of 1 volt for a cell base thickness of 1 micron with a 0.5 micron emitter. This technology will result in a revolutionary improvement in survivability, performance, and manufacturability of lightweight GaAs solar cell products for future Earth-orbiting science and space exploration missions. The thin, electrostatically bonded, all back contact GaAs device technology has multiple uses for specialty high performance solar cells and other optoelectronic devices.

Hannon, M. H.↗