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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

Hower, P. L.↗
NASA NTRS2001

An Experimental Investigation of the Effects of Charging on the International Space Station

An experimental investigation has been undertaken to determine the effects associated with operating the International Space Station (ISS) without a Plasma Contactor Unit (PCU). The role of the PCU is to maintain the potential of the ISS to within 40 volts of the ambient plasma potential. In the event of a PCU failure, ISS structure may charge to - 160 volts with respect to the Low Earth Orbit (LEO) plasma, due to the use of high voltage photovoltaic solar arrays. Operation without a PCU will result in the charging of the oxide layers on anodized aluminum components facing into the RAM direction. In this investigation, arcs were observed as a result of anodized materials charging in a plasma environment. Actual ISS materials were used in the investigation. The materials included meteoroid and debris shield samples, as well as components from the Extravehicular Mobility Unit (EMU). Results show that the occurrence of arcs was dependent on several factors including material composition and applied voltage. The breakdown thresholds for the materials tested will be shown, as well as the voltage and current waveforms during an arc event. The damage resulting from an arc will also be described. In addition, a description of associated operational hazards resulting from arcing on the spacecraft will be provided.

Schneider, Todd↗
NASA NTRS2004

Highly Efficient Vector-Inversion Pulse Generators

Improved transmission-line pulse generators of the vector-inversion type are being developed as lightweight sources of pulsed high voltage for diverse applications, including spacecraft thrusters, portable x-ray imaging systems, impulse radar systems, and corona-discharge systems for sterilizing gases. In this development, more than the customary attention is paid to principles of operation and details of construction so as to the maximize the efficiency of the pulse-generation process while minimizing the sizes of components. An important element of this approach is segmenting a pulse generator in such a manner that the electric field in each segment is always below the threshold for electrical breakdown. One design of particular interest, a complete description of which was not available at the time of writing this article, involves two parallel-plate transmission lines that are wound on a mandrel, share a common conductor, and are switched in such a manner that the pulse generator is divided into a "fast" and a "slow" section. A major innovation in this design is the addition of ferrite to the "slow" section to reduce the size of the mandrel needed for a given efficiency.

Rose, Franklin↗
NASA NTRS1990

Primary lithium cell life studies

One solution for providing a truly independent power source is to package, within the critical subsystem element, a primary battery that can remain dormant for time periods as long as the mission life, which can be 10-15 years, maximum. When primary power from the spacecraft solar array/battery system is interrupted, the backup battery system, which is connected through a diode to the power input line, would automatically support the load to avoid a power interruption to the critical load for a time period long enough to ensure that ground control could access the satellite and correct the anomaly by sending appropriate commands to the spacecraft. Critical subsystems identified for the application are telemetry and command circuits, volatile computer memory, attitude control circuits, and some critical payloads. Due to volume packaging and weight restrictions that exist on most spacecraft, coupled with the long storage periods required, lithium cell technology was selected for the backup power source. Because of the high energy density (200-400 Wh/kg), long shelf life, and load capability, soluble cathode primary lithium technology was chosen. The most important lithium cell properties that require detail characterization for this application are capacity loss, shelf life, and the voltage delay mechanism. These are functions of storage time and temperature. During storage, a passive film builds up on the lithium electrode. The film protects the lithium electrode from progressive capacity decay but requires time to break down when a load is applied. This phenomenon results in a depressed voltage during the period of film breakdown which can last from fractions of a second to minutes.

Capulli, John↗
NASA NTRS1993

Near-equilibrium growth of thick, high quality beta-SiC by sublimation

A close spaced near-equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta-silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 microns in thickness. Chemical vapor deposition grown, 2-10 microns, beta silicon carbide films were used as seeds at 1860 and 1910 C growth temperatures. The respective average growth rates were 20 and 30 microns per hour. The layers are p-type with a 3.1 x 10 exp 17/cu cm carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C-SiC.

Shields, Virgil B.↗
NASA NTRS2011

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

Steady step surge testing (SSST) is widely applied to screen out potential power-on failures in solid tantalum capacitors. The test simulates the power supply's on and off characteristics. Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors for decoupling applications. On the other hand, the SSST can also be reviewed as an electrically destructive test under a time-varying stress. It consists of rapidly charging the capacitor with incremental voltage increases, through a low resistance in series, until the capacitor under test is electrically shorted. Highly accelerated life testing (HALT) is usually a time-efficient method for determining the failure mechanism in capacitors; however, a destructive test under a time-varying stress like SSST is even more effective. It normally takes days to complete a HALT test, but it only takes minutes for a time-varying stress test to produce failures. The advantage of incorporating specific time-varying stress into a statistical model is significant in providing an alternative life test method for quickly revealing the failure modes in capacitors. In this paper, a time-varying stress has been incorporated into the Weibull model to characterize the failure modes. The SSST circuit and transient conditions to correctly test the capacitors is discussed. Finally, the SSST was applied for testing polymer aluminum capacitors (PA capacitors), Ta capacitors, and multi-layer ceramic capacitors with both precious metal electrode (PME) and base-metal-electrodes (BME). It appears that testing results are directly associated to the dielectric layer breakdown in PA and Ta capacitors and are independent on the capacitor values, the way the capacitors being built, and the manufactures. The testing results also reveal that ceramic capacitors exhibit breakdown voltages more than 20 times the rated voltage, and the breakdown voltages are inverse proportional to the dielectric layer thickness. The possibility of ceramic capacitors in front-end decoupling applications to block the surge noise from a power supply is also discussed.

Liu, David (Donhang)↗
NASA NTRS2001

ISS And Space Environment Interactions Without Operating Plasma Contactor

The International Space Station (ISS) will be the largest, highest power spacecraft placed in orbit. Because of this the design of the electrical power system diverged markedly from previous systems. The solar arrays will operate at 160 V and the power distribution voltage will be 120 V. The structure is grounded to the negative side of the solar arrays so under the right circumstances it is possible to drive the ISS potential very negative. A plasma contactor has been added to the ISS to provide control of the ISS structure potential relative to the ambient plasma. The ISS requirement is that the ISS structure not be greater than 40 V positive or negative of local plasma. What are the ramifications of operating large structures with such high voltage power systems? The application of a plasma contactor on ISS controls the potential between the structure and the local plasma, preventing degrading effects. It is conceivable that there can be situations where the plasma contactor might be non-functional. This might be due to lack of power, the need to turn it off during some of the build-up sequences, the loss of functionality for both plasma contactors before a replacement can be installed, similar circumstances. A study was undertaken to understand how important it is to have the contactor functioning and how long it might be off before unacceptable degradation to ISS could occur. The details of interaction effects on spacecraft have not been addressed until driven by design. This was true for ISS. If the structure is allowed to float highly negative impinging ions can sputter exposed conductors which can degrade the primary surface and also generate contamination due to the sputtered material. Arcing has been known to occur on solar arrays that float negative of the ambient plasma. This can also generate electromagnetic interference and voltage transients. Much of the ISS structure and pressure module surfaces exposed to space is anodized aluminum. The anodization thickness is very thin to provide the required solar absorptance and emittance. For conditions where ISS structure can charge negative a large percentage of the array voltage, the dielectric strength of this layer is low, and dielectric breakdown (arcing) can occur. The energy stored capacitively in the structure can be delivered to the arc. The mechanisms by which this energy is delivered and how much of the energy is available hasn't been fully quantified. Questions have been raised regarding the possibility of whether a sustained arc might result due to current collected by the solar arrays from local plasma. It was postulated that even if dielectric breakdown didn't occur, impacts due to micrometeoroids and space debris could penetrate thin layers of dielectric on ISS and initiate an arc due to the coupling provided by the dense local plasma produced by the impact. This was proven in experiments conducted jointly by MSFC and Auburn University. A target chamber with a simulated ionospheric plasma and a biased, anodized aluminum plate and a 1-microfarad capacitor was used. The plate was then impacted by 75-micron particles accelerated to orbital velocity. Arc discharges were sustained for higher voltages but a threshold appears below which no discharge was initiated. Most items without an exposed power system will float electrically near the local plasma potential. This is true of the Space Shuttle, an Astronaut on EVA, and similar items. The structure of ISS might be at a large negative voltage. Therefore, capacitively stored energy can be transferred during docking, installing external boxes and equipment and Astronaut contact with ISS structure. The circumstances of when this can happen and the resulting effects are evaluated in this study. Also, a crewmember on EVA might be in the vicinity of an arc. All safety aspects of such an encounter including charging, molten particles from the arc site and EMI have been evaluated. This paper will report on the total results of this study focussed on the 4A configuration, scheduled to be complete in November, 2000. Interactions such as arcing, debris induced arcs, sustained arcs, sputtering, contamination from sputtering and arcing, docking interactions and Astronaut safety issues will all be addressed.

Carruth, M. R., Jr.↗
NASA NTRS1986

Capacitor-type micrometeoroid detectors

The metal oxide semiconductor (MOS) capacitor micrometeroid detector consists of a thin dielectric capacitor fabricated on a silicon wafer. In operation, the device is charged to a voltage level sufficiently near breakdown that micrometeoroid impacts will cause dielectric deformation or heating and subsequent arc-over at the point of impact. Each detector is capable of recording multiple impacts because of the self-healing characteristics of the device. Support instrumentation requirements consist of a voltage source and pulse counters that monitor the pulse of recharging current following every impact. An investigation has been conducted in which 0.5 to 5 micron diameter carbonized iron spheres traveling at velocities of 4 to 10 Km/sec were impacted on to detectors with either a dielectric thickness of 0.4 or 1.0 micron. This study demonstrated that an ion microprobe tuned to sufficiently high resolution can detect Fe remaining on the detector after the impact. Furthermore, it is also possible to resolve Fe ion images free of mass interferences from Si, for example, giving its spatial distribution after impact. Specifically this technique has shown that significant amounts of impacting particles remain in the crater and near it which can be analyzed for isotopic content. Further testing and calibration could lead to quantitive analysis. This study has shown that the capacitor type micrometeroid detector is capable of not only time and flux measurements but can also be used for isotopic analysis.

Wortman, J. J.↗
NASA NTRS2011

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors in decoupling applications. A surge step stress test (SSST) has been previously applied to identify the critical stress level of a capacitor batch to give some predictability to the power-on failure mechanism [1]. But SSST can also be viewed as an electrically destructive test under a time-varying stress (voltage). It consists of rapidly charging the capacitor with incremental voltage increases, through a low resistance in series, until the capacitor under test is electrically shorted. When the reliability of capacitors is evaluated, a highly accelerated life test (HALT) is usually adopted since it is a time-efficient method of determining the failure mechanism; however, a destructive test under a time-varying stress such as SSST is even more time efficient. It usually takes days or weeks to complete a HALT test, but it only takes minutes for a time-varying stress test to produce failures. The advantage of incorporating a specific time-varying stress profile into a statistical model is significant in providing an alternative life test method for quickly revealing the failure mechanism in capacitors. In this paper, a time-varying stress that mimics a typical SSST has been incorporated into the Weibull model to characterize the failure mechanism in different types of capacitors. The SSST circuit and transient conditions for correctly surge testing capacitors are discussed. Finally, the SSST was applied for testing Ta capacitors, polymer aluminum capacitors (PA capacitors), and multi-layer ceramic (MLC) capacitors with both precious metal electrodes (PME) and base metal electrodes (BME). The test results are found to be directly associated with the dielectric layer breakdown in Ta and PA capacitors and are independent of the capacitor values, the way the capacitors were built, and the capacitors manufacturers. The test results also show that MLC capacitors exhibit surge breakdown voltages much higher than the rated voltage and that the breakdown field is inversely proportional to the dielectric layer thickness. The SSST data can also be used to comparatively evaluate the voltage robustness of capacitors for decoupling applications.

Liu, David (Donhang)↗
NASA NTRS2005

An Improved Thermal Conductivity Polyurethane Composite for a Space Borne 20KV Power Supply

This effort was designed to find a way to reduce the temperature rise of critical components of a 20KV High Voltage Power Supply (HVPS) by improving the overall thermal conductivity of the encapsulated modules. Three strategies were evaluated by developing complete procedures, preparing samples, and performing tests. The three strategies were: 1. Improve the thermal conductivity of the polyurethane encapsulant through the addition of thermally conductive powder while minimizing impact on other characteristics of the encapsulant. 2. Improve the thermal conductivity of the polyurethane encapsulated assembly by the addition of a slab of thermally conductive, electrically insulating material, which is to act as a heat spreader. 3. Employ a more thermally conductive substrate (Al203) with the existing encapsulation scheme. The materials were chosen based on the following criteria: high dielectric breakdown strength; high thermal conductivity, ease of manufacturing, high compliance, and other standard space qualified materials properties (low out-gassing, etc.). An optimized cure was determined by a statistical design of experiments for both filled and unfilled materials. The materials were characterized for the desired properties and a complete process was developed and tested. The thermal performance was substantially improved and the strategies may be used for space flight.

Pb free↗
NASA NTRS2007

Process for High-Rate Fabrication of Alumina Nanotemplates

An anodizing process, at an early stage of development at the time of reporting the information for this article, has shown promise as a means of fabricating alumina nanotemplates integrated with silicon wafers. Alumina nanotemplates are basically layers of alumina, typically several microns thick, in which are formed approximately regular hexagonal arrays of holes having typical diameters of the order of 10 to 100 nm. Interest in alumina nanotemplates has grown in recent years because they have been found to be useful as templates in the fabrication of nanoscale magnetic, electronic, optoelectronic, and other devices. The present anodizing process is attractive for the fabrication of alumina nanotemplates integrated with silicon wafers in two respects: (1) the process involves self-ordering of the holes; that is, the holes as formed by the process are spontaneously arranged in approximately regular hexagonal arrays; and (2) the rates of growth (that is, elongation) of the holes are high enough to make the process compatible with other processes used in the mass production of integrated circuits. In preparation for fabrication of alumina nanotemplates in this process, one first uses electron-beam evaporation to deposit thin films of titanium, followed by thin films of aluminum, on silicon wafers. Then the alumina nanotemplates are formed by anodizing the aluminum layers, as described below. In experiments in which the process was partially developed, the titanium films were 200 A thick and the aluminum films were 5 m thick. The aluminum films were oxidized to alumina, and the arrays of holes were formed by anodizing the aluminum in aqueous solutions of sulfuric and/or oxalic acid at room temperature (see figure). The diameters, spacings, and rates of growth of the holes were found to depend, variously, on the composition of the anodizing solution, the applied current, or the applied potential, as follows: In galvanostatically controlled anodizing, regardless of the chemical composition of the solution, relatively high current densities (50 to 100 mA/cm2) resulted in arrays of holes that were more nearly regular than were those formed at lower current densities. . The rates of elongation of the holes were found to depend linearly on the applied current density: the observed factor of proportionality was 1.2 (m/h)/(mA/cm2). For a given fixed current density and room temperature, the hole diameters were found to depend mainly on the chemical compositions of the anodizing solutions. The holes produced in sulfuric acid solutions were smaller than those produced in oxalic acid solutions. The arrays of holes produced in sulfuric acid were more ordered than were those produced in oxalic acid. . The breakdown voltage was found to decrease logarithmically with increasing concentration of sulfuric acid. The breakdown voltage was also found to decrease with temperature and to be accompanied by a decrease in hole diameter. The hole diameter was found to vary linearly with applied potential, with a slope of 2.1 nm/V. This slope differs from slopes (2.2 and 2.77 nm/V) reported for similar prior measurements on nanotemplates made from bulk aluminum. The differences among these slopes may be attributable to differences among impurities and defects in bulk and electron-beam-evaporated aluminum specimens.

Myung, Nosang↗
NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗
NASA NTRS1992

Silicon device performance measurements to support temperature range enhancement

Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.

Bromstead, James↗
NASA NTRS2009

Extended Life PZT Stack Test Fixture

Piezoelectric stacks are being sought to be used as actuators for precision positioning and deployment of mechanisms in future planetary missions. Beside the requirement for very high operation reliability, these actuators are required for operation at space environments that are considered harsh compared to normal terrestrial conditions.These environmental conditions include low and high temperatures and vacuum or high pressure. Additionally, the stacks are subjected to high stress and in some applications need to operate with a very long lifetime durability.Many of these requirements are beyond the current industry design margins for nominal terrestrial applications. In order to investigate some of the properties that will indicate the durability of such actuators and their limitations we have developed a new type of test fixture that can be easily integrated in various test chambers for simulating environmental conditions, can provide access for multiple measurements while being exposed to adjustable stress levels. We designed and built two test fixtures and these fixtures were made to be adjustable for testing stacks with different dimensions and can be easily used in small or large numbers. The properties that were measured using these fixtures include impedance, capacitance, dielectric loss factor, leakage current, displacement, breakdown voltage, and lifetime performance. The fixtures characteristics and the test capabilities are presented in this paper.

test fixtures↗
NASA NTRS1996

An Experimental Investigation of Wall-Cooling Effects on Hypersonic Boundary-Layer Stability in a Quiet Wind Tunnel

One of the primary reasons for developing quiet tunnels is for the investigation of high-speed boundary-layer stability and transition phenomena without the transition-promoting effects of acoustic radiation from tunnel walls. In this experiment, a flared-cone model under adiabatic- and cooled-wall conditions was placed in a calibrated, 'quiet' Mach 6 flow and the stability of the boundary layer was investigated using a prototype constant-voltage anemometer. The results were compared with linear-stability theory predictions and good agreement was found in the prediction of second-mode frequencies and growth. In addition, the same 'N=10' criterion used to predict boundary-layer transition in subsonic, transonic, and supersonic flows was found to be applicable for the hypersonic flow regime as well. Under cooled-wall conditions, a unique set of continuous spectra data was acquired that documents the linear, nonlinear, and breakdown regions associated with the transition of hypersonic flow under low-noise conditions.

Blanchard, Alan E.↗
NASA NTRS1997

The Charging of Composites in the Space Environment

Deep dielectric charging and subsequent electrostatic discharge in composite materials used on spacecraft have become greater concerns since composite materials are being used more extensively as main structural components. Deep dielectric charging occurs when high energy particles penetrate and deposit themselves in the insulating material of spacecraft components. These deposited particles induce an electric field in the material, which causes the particles to move and thus changes the electric field. The electric field continues to change until a steady state is reached between the incoming particles from the space environment and the particles moving away due to the electric field. An electrostatic discharge occurs when the electric field is greater than the dielectric strength of the composite material. The goal of the current investigation is to investigate deep dielectric charging in composite materials and ascertain what modifications have to be made to the composite properties to alleviate any breakdown issues. A 1-D model was created. The space environment, which is calculated using the Environmental Workbench software, the composite material properties, and the electric field and voltage boundary conditions are input into the model. The output from the model is the charge density, electric field, and voltage distributions as functions of the depth into the material and time. Analysis using the model show that there should be no deep dielectric charging problem with conductive composites such as carbon fiber/epoxy. With insulating materials such as glass fiber/epoxy, Kevlar, and polymers, there is also no concern of deep dielectric charging problems with average day-to-day particle fluxes. However, problems can arise during geomagnetic substorms and solar particle events where particle flux levels increase by several orders of magnitude, and thus increase the electric field in the material by several orders of magnitude. Therefore, the second part of this investigation was an experimental attempt to measure the continuum electrical properties of a carbon fiber/epoxy composite, and to create a composite with tailorable conductivity without affecting its mechanical properties. The measurement of the conductivity and dielectric strength of carbon fiber/epoxy composites showed that these properties are surface layer dominated and difficult to measure. In the second experimental task, the conductivity of a glass fiber/epoxy composite was increased by 3 orders of magnitude, dielectric constant was increased approximately by a factor of 16, with minimal change to the mechanical properties, by adding conductive carbon black to the epoxy.

Czepiela, Steven A.↗
NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗
NASA NTRS1995

Photoelectrochemical etching of silicon carbide (SiC) and its characterization

Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V.

Collins, D. M.↗