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At least 199 records · Page 11

Dissipation of electron-beam-driven plasma wakes

Metre-scale plasma wakefield accelerators have imparted energy gain approaching 10 gigaelectronvolts to single nano-Coulomb electron bunches. To reach useful average currents, however, the enormous energy density that the driver deposits into the wake must be removed efficiently between shots. Yet mechanisms by which wakes dissipate their energy into surrounding plasma remain poorly understood. Here, we report picosecond-time-resolved, grazing-angle optical shadowgraphic measurements and large-scale particle-in-cell simulations of ion channels emerging from broken wakes that electron bunches from the SLAC linac generate in tenuous lithium plasma. Measurements show the channel boundary expands radially at 1 million metres-per-second for over a nanosecond. Simulations show that ions and electrons that the original wake propels outward, carrying 90 percent of its energy, drive this expansion by impact-ionizing surrounding neutral lithium. The results provide a basis for understanding global thermodynamics of multi-GeV plasma accelerators, which underlie their viability for applications demanding high average beam current.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Subpicosecond HI elimination in the 266 nm photodissociation of branched iodoalkanes

Here, the 266 nm photodissociation dynamics of 1-iodopropane and 2-iodopropane were studied using photofragment translational energy spectroscopy using vacuum ultraviolet (VUV) photoionization and electron impact ionization detection of products. The photochemistry of 1-iodopropane was found to be similar to that of iodomethane and iodoethane, with dominant production of I*( 2 P 1/2 ), and no evidence (<0.21%) for HI + alkene formation. Significantly different behavior was observed for 2-iodopropane, with dominant production of ground state I( 2 P 3/2 ), and a HI yield >10.5%. The anisotropy (β) parameters for all channels approached the limiting value of 2.0, indicating that 1,2-HI elimination occurs on subpicosecond timescales, like direct C–I bond fission, following excitation to 3 Q 0 . The HI translational energy and angular distributions were similar to those for I( 2 P 3/2 ), suggesting that motion of the heavy I atom in HI is largely derived from the repulsive nature of the 1 Q 1 surface correlating to R + I with the light H atom picked up by ground state I late in the exit channel producing highly vibrationally excited HI.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Experimental studies of high-temperature thermal dissociation of iso-propanol

iso-Propanol is an important biofuel for transportation and industrial applications, as well as a canonical compound for understanding alcohol reaction chemistry. There are few studies of the thermal decomposition of iso-propanol, hence the objective of this work was to investigate the mechanism of iso-propanol pyrolysis at high-temperature conditions. Shock tube studies were used to investigate the thermal decomposition of iso-propanol and identify the dominant reaction pathways and the intermediate species present in the temperature range of 1395–2053 K and at pressures of 0.3–4 bar. Time-resolved mass spectra were obtained from pyrolysis experiments in shock tube/mass spectrometer apparatuses using electron impact ionization or synchrotron vacuum ultraviolet photoionization. The relative concentrations of the intermediate species were used to identify the dominant reaction channels. iso-Propanol dissociated by water loss to propene and by elimination of a methyl radical yielding a 1-hydroxyethyl radical at the conditions studied. The time-dependent mass spectra allowed secondary products to be identified along with the orders of appearance. Notably, peaks at m/z = 50 and 52 were observed providing insight into secondary reactions. These features have not been previously reported in propanol-pyrolysis literature.

Kim, John H. [Univ. of Michigan, Ann Arbor, MI (Un↗

Fokker-Planck simulations of fast ion ICRF and electron EC heating in a mirror plasma using CQL3D-m

The CQL3D-m continuum bounce-average Fokker-Planck code is adapted for magnetic mirror plasmas [1] and is now routinely used in no-free-parameter classical integrated modeling of mirror devices [2, 3]. In the present effort, we report on two RF methods of plasma heating in mirror machine. The fast ions (FI) are heated by Fast waves at 2nd-4th harmonic, where FIs originate from neutral beam injection at 45 degrees to the magnetic field. The scenario shows an efficient ion heating near the FI bouncing point. The electrons are heated by X-mode launched from the high magnetic field side towards the resonance. Different from the tokamak applications, CQL3D-m provides an evolving self-consistent ambipolar parallel electric field, which determines the shape of the loss cone and hence an accurate confinement time of both ions and electrons. Also, it includes a description of ion and electron sources and sinks (related to charge exchange and impact ionization) which are updated at every time step. CQL3D-m utilizes a fully nonlinear Coulomb collision operator that is important for the significantly non-Maxwellian ion distributions typically established in mirror plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Microscopic model of the doping dependence of linewidths in monolayer transition metal dichalcogenides

A fully microscopic model of the doping-dependent exciton and trion linewidths in the absorption spectra of monolayer transition metal dichalcogenides in the low temperature and low-doping regime is explored. The approach is based on perturbation theory and avoids the use of phenomenological parameters. In the low-doping regime, we find that the trion linewidth is relatively insensitive to doping levels, while the exciton linewidth increases monotonically with doping. On the other hand, we argue that the trion linewidth shows a somewhat stronger temperature dependence. The magnitudes of the linewidths are likely to be masked by phonon scattering for T ≥ 20 K in encapsulated samples in the low-doping regime. We discuss the breakdown of perturbation theory, which should occur at relatively low-doping levels and low temperatures. Our work also paves the way toward understanding a variety of related scattering processes, including impact ionization and Auger scattering in clean 2D samples

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Ion-driven destabilization of a toroidal electron plasma—A 3D3V PIC simulation

Ion-driven destabilization of a toroidal electron plasma in a small aspect ratio axisymmetric toroidal device is reported for A r + ions of different initial density values using a high fidelity 3D3V PIC solver. Stability of a recently discovered quiescent quasi-steady state (QQS) of a toroidal electron plasma obtained from “seed” solution as a result of entropy extremization at zero inertia is addressed in the presence of a small ion population. An initial value (f0) of the ion fraction (f = n i / n e) and the corresponding secondary electrons are “preloaded” into the system after the electron plasma attains a QQS state. This procedure is regarded as a proxy to the conventional production of ions in the experimental devices via impact ionization. The resulting electron plasma exhibits destabilized “center of charge motion” (m = 1) along with higher order harmonics with dominant power in the second harmonic. Gradual loss of ions (and also electrons) is observed resulting in time varying f values. Beyond a certain value of f0 (≥ 0.005), growth in wall probe current is observed, which saturates at later simulation time due to the loss of particles. In conclusion, trajectories of ion particles indicate ion trapping in the potential well, which is qualitatively similar to the ion resonance instability in pure electron plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗

Optical emission spectroscopy and imaging of low-pressure N2 plasmas generated by intense fast-pulsed electron beams

An optical emission spectroscopic (OES) and imaging characterization is conducted on N2 plasmas generated by a 100 keV fast-pulsed electron beam. The electron beams are injected into an N2 gas filled volume with a current of 4.5 kA (300 A/cm2) and a 100 ns pulse width. The characterization is conducted at the pressures, 1 Torr and 0.1 Torr, corresponding to two distinct regimes that exhibit significantly different plasma dynamics. Beam impact ionization is shown to be a primary mechanism for producing low temperature plasmas at 1 Torr during beam output. After beam termination, ionization by an inductive electric field becomes the primary mechanism for plasma formation later in time for both pressures. OES and plasma imaging are used in this work as a diagnostic tool to track the distribution of electronic, vibrational, and rotational state transitions and ionized species. This is achieved with the use of a multi-resolution suite of spectrometers capable of acquiring time-resolved spectra. Vibrational and rotational bands of the N2 second positive system (C3Πu→B3Πg) and the N2+ first negative system (B2Σu+→X2Σg+) are identified in both regimes as well as N+ states exclusively in the lower pressure regime. Vibrational and rotational spectra are shown to track the evolution of the time-varying plasma current. Plasma imaging also reveals spatially nonuniform plasma emission at 0.1 Torr. A few hundred shots are recorded to fully characterize the emissions, and results are shown to be highly reproducible (≤±1% with 2σ confidence).

Kaiser, E. R. (ORCID:0000000336493938)↗

High-fidelity modeling of breakdown in helium: initiation processes and secondary electron emission

Understanding the role of physical processes contributing to breakdown is critical for many applications in which breakdown is undesirable, such as capacitors, and applications in which controlled breakdown is intended, such as plasma medicine, lightning protection, and materials processing. The electron emission from the cathode is a critical source of electrons which then undergo impact ionization to produce electrical breakdown. In this study, the role of secondary electron yields due to photons (γ ph ) and ions (γ i ) in direct current breakdown is investigated using a particle-in-cell direct simulation Monte Carlo model. The plasma studied is a one-dimensional discharge in 50 Torr of pure helium with a platinum cathode, gap size of 1.15 cm, and voltages of 1.2–1.8 kV. The current traces are compared with experimental measurements. Larger values of γ ph generally result in a faster breakdown, while larger values of γ i result in a larger maximum current. The 58.4 nm photons emitted from He(2 1 P) are the primary source of electrons at the cathode before the cathode fall is developed. Of the values of γ ph and γ i investigated, those which provide the best agreement with the experimental current measurements are γ ph = 0.005 and γ i = 0.01. In this work, these values are significantly lower than those in the literature for pristine platinum or for a graphitic carbon film which we speculate may cover the platinum. This difference is in part due to the limitations of a one-dimensional model but may also indicate surface conditions and exposure to a plasma can have a significant effect on the secondary electron yields. The effects of applied voltage and the current produced by a UV diode which was used to initiate the discharge, are also discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Exploring charge transport dynamics in a cryogenic P-type germanium detector

Abstract This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota. By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be 8.45 × 10 −11 ± 4.22 × 10 −12 cm 2 . Examination of the binding energy associated with cluster dipole states, formed by charge trapping onto dipole states during the freeze-out process, reveals a value of 0.034 ± 0.0017 meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter.

Physics↗

On the importance of excited state species in low pressure capacitively coupled plasma argon discharges

In the past three decades, first principles-based fully kinetic particle-in-cell Monte Carlo collision (PIC/MCC) simulations have been proven to be an important tool for the understanding of the physics of low pressure capacitive discharges. However, there is a long-standing issue that the plasma density determined by PIC/MCC simulations shows quantitative deviations from experimental measurements, even in argon discharges, indicating that certain physics may be missing in previous modeling of the low pressure radio frequency (rf) driven capacitive discharges. In this work, we report that the energetic electron-induced secondary electron emission (SEE) and excited state atoms play an important role in low pressure rf capacitive argon plasma discharges. The ion-induced secondary electrons are accelerated by the high sheath field to strike the opposite electrode and produce a considerable number of secondary electrons that lead to additional ionizing impacts and further increase of the plasma density. Importantly, the presence of excited state species even further enhances the plasma density via excited state neutral and resonant state photon-induced SEE on the electrode surface. The PIC/MCC simulation results show good agreement with the recent experimental measurements in the low pressure range (1–10 Pa) that is commonly used for etching in the semiconductor industry. At the highest pressure (20 Pa) and driving voltage amplitudes 250 and 350 V explored here, the plasma densities from PIC/MCC simulations considering excited state neutrals and resonant photon-induced SEE are quantitatively higher than observed in the experiments, requiring further investigation on high pressure discharges.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗

Constraints on low-mass, relic dark matter candidates from a surface-operated SuperCDMS single-charge sensitive detector

This article presents an analysis and the resulting limits on light dark matter inelastically scattering off of electrons, and on dark photon and axionlike particle absorption, using a second-generation SuperCDMS high-voltage eV-resolution detector. The 0.93 g Si detector achieved a 3 eV phonon energy resolution; for a detector bias of 100 V, this corresponds to a charge resolution of 3% of a single electron-hole pair. The energy spectrum is reported from a blind analysis with 1.2 g-days of exposure acquired in an above-ground laboratory. With charge carrier trapping and impact ionization effects incorporated into the dark matter signal models, the dark matter-electron cross section σ ¯ e is constrained for dark matter masses from 0.5 to 10 4 MeV / c 2 ; in the mass range from 1.2 to 50 eV / c 2 the dark photon kinetic mixing parameter ϵ and the axioelectric coupling constant g a e are constrained. The minimum 90% confidence-level upper limits within the above-mentioned mass ranges are σ ¯ e = 8.7 × 10 - 34 cm 2 , ϵ = 3.3 × 10 - 14 , and g a e = 1.0 × 10 - 9 .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Implementing a microphysics model in hydrodynamic simulations to study the initial plasma formation in dielectric ablator materials for direct-drive implosions

A microphysics model to describe the photoionization and impact ionization processes in dielectric ablator materials like plastic has been implemented into the 1-D hydrodynamic code LILAC for planar and spherical targets. Currently, the initial plasma formation during the early stages of a laser drive are modeled in an ad hoc manner, until the formation of a critical surface. Implementation of the physics-based models predict higher values of electron density, electron temperature, and pressure than the ad hoc model. Moreover, the numerical predictions are consistent with previous experimental observations of the shinethrough mechanism in plastic ablators. For planar targets, a decompression of the rear end of the target was observed, that is similar to recent experiments. An application of this model is to understand the laser-imprint mechanism that is caused by nonuniform laser irradiation due to single beam speckle.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (~95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. Furthermore, these results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV. Index Terms— GaN, HEMT, power electronics, hard switching, breakdown voltage, overvoltage, ruggedness, reliability.

42 ENGINEERING↗

The Effect of Radiation Damage on the Charge Collection Efficiency of Silicon Avalanche Photodiodes

Understanding radiation effects on avalanche photodiodes (APDs) is important because they are used in several applications involving harsh radiation environments. APDs are used as photosensors in applications where speed and detection efficiency are critical. Proton irradiation experiments on a commercial off-the-shelf APD demonstrated that the irradiation flux and applied reverse bias have a strong influence on the severity of radiation effects. This is measured using the ion beam induced charge (IBIC) technique in which charge collection efficiency (CCE) describes the signal response from a device. CCE can degrade substantially due to radiation damage, but recent measurements show that certain combinations of irradiation flux and reverse bias can lead to increases in CCE up to 186% ± 24% for irradiations with 2 MeV protons at a fluence of 6.4 × 10 11 cm –2 . This defect-enhanced charge multiplication (DECM) only appeared when the reverse bias during irradiation ranged from 170 to 1830 V out of a maximum operating bias of 2000 V and the proton flux ranged from 9.8 × 10 7 to 3.4 × 10 9 cm –2 s –1 . Furthermore values outside of either range led to losses in CCE. It is expected that DECM should be encountered in other devices, especially those with sufficiently high electric fields to cause impact ionization.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Time-resolved measurement of electron beam neutralization

An intense relativistic electron beam (IREB) incident on a target generates positive ions by stimulated and thermal desorption of adsorbed gas, and subsequent electron impact ionization. These ions are accelerated upstream by the beam space-charge potential, thereby partially neutralizing the beam. If there is enough neutralization, the repulsive space-charge force can be overcome by the magnetic-pinch force due to the beam current. This so-called ion focusing is responsible for time dependent defocusing of the radiographic source spot. Since a single monolayer of adsorbed gas has a surface density of about 10 15 /cm 2 and is formed in about one second in a one micro-Torr vacuum, there is always enough adsorbed gas to make this a concern in our accelerators. Therefore, time-resolved measurements of the degree of neutralization are valuable for better understanding of this process with an eye to mitigation for improvement of our radiography. Moreover, these measurements would aid quantification of uncertainties due to these effects when using invasive beam diagnostics, such as OTR imaging targets.

43 PARTICLE ACCELERATORS↗

Estimating Beam-Target Heating

At Los Alamos National Laboratory, two high-current linear induction accelerators (LIAs) are used to produce bremsstrahlung source spots for flash radiography of high-explosive driven hydrodynamic experiments at the Dual Axis Radiographic Hydrodynamic Test (DARHT) facility. Measurements of the electron-beam current density profile are valuable for understanding the beam dynamics in order to improve the quality of the radiography source spot. A technique commonly used at DARHT is to image the profile in Cerenkov or Optical Transition Radiation (OTR) light created by the beam striking a thin target inserted into the beam line. Target materials include aluminized dielectrics and titanium foils for OTR, and fused silica wafers for Cerenkov radiation. A practical complication with this technique is heating of the target by the electron beam. If the beam density is too great, the target can be destroyed. Moreover, even if the beam density is kept low enough to be nondestructive, the beam can heat the target to a high enough temperature to desorb gas from the surface. In that case, direct impact ionization of the gas by beam electrons can partially neutralize the beam, causing it to over-focus, thereby spoiling the data, if not destroying the target. The purpose of this note is to review some of the fundamental physics of electron beam heating in order to provide some elementary guidance for design of these imaging experiments to avoid overheating the target. Some specific examples for materials that we often use for imaging targets and beam-target experiments are provided.

43 PARTICLE ACCELERATORS↗