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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Small Molecule Inhibitor-Modulated Al 2 O 3 Atomic Layer Deposition on Monolayer MoS 2 for Controlled Nucleation

The integration of ultrathin dielectrics on two-dimensional (2D) semiconductors is essential for advancing beyond-Si electronics. However, the intrinsic inertness of van der Waals 2D basal planes remains a primary bottleneck to achieving uniform dielectric nucleation and growth. Here, in this study, we introduce a small molecule inhibitor (SMI)-modulated thermal atomic layer deposition (ALD) strategy, exemplified by aluminum oxide (Al 2 O 3 ) ALD on monolayer molybdenum disulfide (1L MoS 2 ) with acetic acid (HAc) SMI. The ABC-type sequence comprises HAc inhibitor (A), trimethylaluminum (TMA) precursor (B), and deionized H 2 O coreactant (C). In situ quartz crystal microbalance (QCM) studies reveal robust HAc adsorption on Al 2 O 3 and suppression of subsequent oxide growth on HAc-passivated surfaces. When applied to 1L MoS 2 , this inhibitory pathway enables HAc to selectively passivate nascent Al 2 O 3 nuclei formed on the MoS 2 surface, limiting their three-dimensional (3D) island coarsening and redirecting precursor adsorption toward the uncovered basal plane. Consequently, nearly continuous ultrathin (∼1.5 nm) Al 2 O 3 films are achieved on 1L MoS 2 with markedly improved uniformity compared to standard Al 2 O 3 ALD using TMA and H 2 O, as validated by atomic force microscopy (AFM), cross-sectional scanning transmission electron microscopy (STEM), and energy-dispersive X-ray spectroscopy (EDS). Density functional theory (DFT) calculations further provide atomistic insight into HAc-modulated Al 2 O 3 nucleation, corroborating the energetic preference of HAc for Al 2 O 3 over MoS 2 and attenuated TMA adsorption on HAc-passivated surfaces. Spatially resolved Raman spectroscopy also confirms that the HAc-modulated process preserves the structural integrity of 1L MoS 2 , with only minimal strain and doping perturbations observed after dielectric deposition. This SMI-modulated approach offers a broadly applicable framework for controlling ALD nucleation across various inhibitors, ALD chemistries, and 2D materials, opening opportunities for reliable dielectric integration in next-generation nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Dynamic Fano-like resonances in erbium-doped whispering-gallery-mode microresonators

We report Fano-like asymmetric resonances modulated by optical gain in a whispering-gallery-mode resonator fabricated from erbium-doped silica. A time-dependent gain profile leads to dynamically varying sharp asymmetric resonances with features similar to Fano resonances. Depending on the scan speed of the frequency of the probe laser and the pump-probe power ratio, transmission spectra of the active microcavity exhibit a resonance dip, a resonance peak, or a Fano-like resonance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Melting of spatially modulated phases at domain wall/surface junctions in antiferrodistortive multiferroics

A physical understanding of the nature of spatially modulated phases (SMPs) in rare-earth-doped antiferrodistortive (AFD) multiferroics and how they behave close to surfaces and interfaces is lacking. Here the emergence of the antiferroelectric (AFE), ferroelectric (FE), or ferrielectric (AFE-FE) spatial modulation in the vicinity of the morphotropic phase transition in La x Bi 1 – x Fe O 3 ( x ~ 0.2 ) is explored on the atomic level using high-resolution scanning transmission electron microscopy (HRSTEM). The suppression, or “melting,” of the AFE-type SMP in the vicinity of the AFD twin wall/surface junction is revealed by HRSTEM in La 0.22 Bi 0.78 Fe O 3 films and explained by the hybrid approach combining Landau-Ginzburg-Devonshire (LGD) phenomenology and the semimicroscopic four-sublattice model (FSM). The LGD-FSM approach reduces the problem of AFE (or AFE-FE) SMP emergence and stability to the thermodynamic analysis of the free-energy functional with AFE, FE, and AFD long-range order parameters and two master parameters: the FE-AFE coupling strength between four neighboring A sites and the nonstoichiometry factor, which are proportional to the variations of La concentration in La x Bi 1 – x Fe O 3 films. Finally, we establish that the surface-induced melting of SMPs and the associated broadening of AFE AFD domain walls minimize the film free energy under certain conditions imposed on the master parameters and gradient energy below the critical value. The observed behavior provides insight into the origin of SMPs in AFD multiferroics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Light-induced Kondo-like exciton-spin interaction in neodymium(II) doped hybrid perovskite

Abstract Tuning the properties of a pair of entangled electron and hole in a light-induced exciton is a fundamentally intriguing inquiry for quantum science. Here, using semiconducting hybrid perovskite as an exploratory platform, we discover that Nd 2+ -doped CH 3 NH 3 PbI 3 (MAPbI 3 ) perovskite exhibits a Kondo-like exciton-spin interaction under cryogenic and photoexcitation conditions. The feedback to such interaction between excitons in perovskite and the localized spins in Nd 2+ is observed as notably prolonged carrier lifetimes measured by time-resolved photoluminescence, ~10 times to that of pristine MAPbI 3 without Nd 2+ dopant. From a mechanistic standpoint, such extended charge separation states are the consequence of the trap state enabled by the antiferromagnetic exchange interaction between the light-induced exciton and the localized 4 f spins of the Nd 2+ in the proximity. Importantly, this Kondo-like exciton-spin interaction can be modulated by either increasing Nd 2+ doping concentration that enhances the coupling between the exciton and Nd 2+ 4 f spins as evidenced by elongated carrier lifetime, or by using an external magnetic field that can nullify the spin-dependent exchange interaction therein due to the unified orientations of Nd 2+ spin angular momentum, thereby leading to exciton recombination at the dynamics comparable to pristine MAPbI 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2019

Online simulation powered learning modules for materials science

Simulation tools are playing a significant role in materials science and engineering and beyond their well established importance in research and development, these tools have a vital pedagogical potential. We describe a set of online simulation tools and learning modules designed to help students explore important concepts in materials science where hands-on activities with high-fidelity simulations can provide insight not easily acquired otherwise. The online tools, which involve density functional theory and molecular dynamics simulations, have been designed with non-expert end-users in mind and only a few clicks are required to perform most simulations, yet they are powered by research-grade codes and expert users can access advanced options. All tools and modules are available for online simulation in nanoHUB.org and access is open and free of charge. Importantly, instructors and students do not need to download or install any software. The learning modules cover a range of topics from electronic structure of crystals and doping, plastic deformation in metals, and physical properties of polymers. These modules have been utilized in several core undergraduate courses at Purdue’s School of Materials Engineering, they are self contained, and are easy to incorporate into existing classes.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Uncommon Behavior of Li Doping Suppresses Oxygen Redox in P2-Type Manganese-Rich Sodium Cathodes

Utilizing both cationic and anionic oxygen redox reactions is regarded as an important approach to exploit high-capacity layered cathode materials with earth abundant elements. It has been popular strategies to effectively elevate the oxygen redox activities by Li-doping to introduce unhybridized O 2p orbitals in Na x MnO 2 -based chemistries or enabling high covalency transition metals in P2-Na 0.66 Mn x TM 1-x O 2 (TM = Fe, Cu, Ni) materials. Here, we investigated the effect of Li doping on regulating the oxygen redox activities P2-structured Na 0.66 Ni 0.25 Mn 0.75 O 2 materials. Systematic X-ray characterizations and ab initio simulations have shown that the doped Li has uncommon behavior in modulating the density of states of the neighboring Ni, Mn and O, leading to the suppression of the existing oxygen and Mn redox reactivities and the promotion of the Ni redox. Furthermore, the findings provide a complementary scenario to current oxygen redox mechanisms and shed lights on developing new routes for high-performance cathodes.

25 ENERGY STORAGE↗
DOE OSTI2024

Fluctuating charge-density-wave correlations in the three-band Hubbard model

The high-temperature superconducting cuprates host unidirectional spin- and charge-density-wave orders that can intertwine with superconductivity in nontrivial ways. While the charge components of these stripes have now been observed in nearly all cuprate families, their detailed evolution with doping varies across different materials and at high and low temperatures. We address this problem using nonperturbative determinant quantum Monte Carlo calculations for the three-band Hubbard model. Using an efficient implementation, we can resolve the model’s fluctuating spin and charge modulations and map their evolution as a function of the charge transfer energy and doping. We find that the incommensurability of the charge modulations is decoupled from the spin modulations and decreases with hole doping, consistent with experimental measurements at high temperatures. These findings support the proposal that the high-temperature charge correlations are distinct from the intertwined stripe order observed at low-temperature and in the single-band Hubbard model.

42 ENGINEERING↗
DOE OSTI2024

Data Files for P. Mai et al., "Fluctuating charge-density-wave correlations in the three-band Hubbard model" (2024)

The high-temperature superconducting cuprates host unidirectional spin- and charge-density-wave orders that can intertwine with superconductivity in nontrivial ways. While the charge components of these stripes have now been observed in nearly all cuprate families, their detailed evolution with doping varies across different materials and at high and low temperatures. We address this problem using nonperturbative determinant quantum Monte Carlo calculations for the three-band Hubbard model. Using an efficient implementation, we can resolve the model’s fluctuating spin and charge modulations and map their evolution as a function of the charge transfer energy and doping. We find that the incommensurability of the charge modulations is decoupled from the spin modulations and decreases with hole doping, consistent with experimental measurements at high temperatures. These findings support the proposal that the high-temperature charge correlations are distinct from the intertwined stripe order observed at low-temperature and in the single-band Hubbard model.

cuprates↗
DOE OSTI2015

A hole modulator for InGaN/GaN light-emitting diodes

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Electroabsorption optical modulator

An electroabsorption modulator that operates based on electroabsorption of a surface plasmon polariton mode is improved by various structural changes and/or selection of different materials. For example, at least a portion of the waveguide may be made to be conductive, e.g., by doping. Also, layers that make up the modulator structure may be placed along sides of waveguides in addition to or instead of simply on the top thereof. High permittivity gate dielectric materials may be employed. Also, materials other than ITO may be employed as a transparent conductor. Such an improved plasmonic electroabsorption modulator can be fabricated using standard semiconductor processing techniques and may be integrated with standard photonic integrated circuits, including silicon photonics and compound semiconductor-based platforms. Advantageously, high-speed, low-voltage operation over a wide spectrum of wavelengths may be achieved.

Wood, Michael↗
DOE OSTI2014

Band Gap Engineering and Layer-by-Layer Band Gap Mapping of Selenium-doped Molybdenum Disulfide

Ternary two-dimensional dichalcogenide alloys exhibit compositionally modulated electronic structure and hence, control of dopant concentration within each layer of these layered compounds provides a powerful way to modify their properties. The challenge then becomes quantifying and locating the dopant atoms within each layer in order to better understand and fine-tune the desired properties. Here we report the synthesis of selenium substitutionally doped molybdenum disulfide atomic layers, with a broad range of selenium concentrations, resulting in band gap modulations of over 0.2 eV. Atomic scale chemical analysis using Z-contrast imaging provides direct maps of the dopant atom distribution in individual MoS2 layers and hence a measure of the local band gaps. Furthermore, in a bilayer structure, the dopant distribution of each layer is imaged independently. We demonstrate that each layer in the bilayer contains similar doping levels, randomly distributed, providing new insights into the growth mechanism and alloying behavior in two-dimensional dichalcogenide atomic layers. The results show that growth of uniform, ternary, two-dimensional dichalcogenide alloy films with tunable electronic properties is feasible.

Gong, Yongji↗
DOE OSTI2025

A General Strategy for Bandgap Engineering Via Anion‐Lattice Doping in High‐Entropy Oxides

Bandgap engineering is a critical tool for tailoring the electronic properties of functional materials, traditionally achieved by modifying the cation sublattice. Here, a generalizable strategy is introduced that leverages facile anion-lattice doping in high entropy materials to modulate the bandgap in high-entropy metal oxides (HEMOs). By incorporating nitrogen into a single-phase high-entropy metal oxide/nitride (HEMO:HEMN) solid solution, a substantial bandgap reduction is achieved from 3.55 eV (HEMO) to ≈2.46 eV (HEMO:HEMN), significantly enhancing electronic conductivity. Unlike conventional bandgap tuning approaches that rely on cation substitution or heterojunction formation, this method exploits anion-mediated entropy stabilization, enabling uniform bandgap narrowing across the entire solid solution. This anion-lattice engineering strategy is broadly applicable to high-entropy systems, providing a new pathway for designing energy materials with tailored electronic properties. The resulting HEMO:HEMN solid solution exhibits a tenfold increase in capacitance and capacity compared to HEMO in supercapacitor and lithium-ion battery tests, demonstrating the transformative potential of anion-driven bandgap modulation for next-generation energy storage and conversion technologies.

energy storage↗
DOE OSTI2015

Conductivity-limiting bipolar thermal conductivity in semiconductors

Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a “conductivity-limiting” phenomenon and it is thus controlled by the carrier mobility ratio and by the minority carrier partial electrical conductivity for the intrinsic and extrinsic cases, respectively. Our numerical method quantifies the role of electronic band structure and carrier scattering mechanisms. We have successfully demonstrated bipolar thermal conductivity reduction in doped semiconductors via electronic band structure modulation and/or preferential minority carrier scatterings. We expect this study to be beneficial to the current interests in optimizing thermoelectric properties of narrow gap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Performance Characterization and Remedy of Experimental CuInGaSe2 Mini-Modules: Preprint

We employed current-voltage (I-V), quantum efficiency (QE), photoluminescence (PL), electroluminescence (EL), lock-in thermography (LIT), and (electrochemical) impedance spectroscopy (ECIS) to complementarily characterize the performance and remedy for two pairs of experimental CuInGaSe2 (CIGS) mini-modules. One pair had the three scribe-lines (P1/P2/P3) done by a single pulse-programmable laser,and the other had the P2/P3 lines by mechanical scribe. Localized QE measurements for each cell strip on all four mini-modules showed non-uniform distributions that correlated well with the presence of performance-degrading strips or spots revealed by PL, EL, and LIT imaging. Performance of the all-laser-scribed mini-modules improved significantly by adding a thicker Al-doped ZnO layer andreworking the P3 line. The efficiency on one of the all-laser-scribed mini-modules increased notably from 7.80% to 8.56% after the performance-degrading spots on the side regions along the cell array were isolated by manual scribes.

14 SOLAR ENERGY↗
DOE OSTI2018

Spatially modulated susceptibility in thin film La 2 - x Ba x CuO 4

The high critical temperature superconductor Lanthanum Barium Copper Oxide (La 2-x Ba x CuO 4 or LBCO) exhibits a strong anomaly in critical temperature at 1/8th doping, nematicity, and other interesting properties. Here, we report Scanning Superconducting Quantum Interference Device (SQUID) imaging of the magnetic fields and susceptibility in a number of thin film LBCO samples with doping in the vicinity of the 1/8th anomaly. Spatially resolved measurements of the critical temperatures of these samples do not show a pronounced depression at 1/8th doping. They do, however, exhibit strong, nearly linear modulations of the susceptibility (“striae”) of multiple samples with surprisingly long periods of 1 - 4 μm. Counterintuitively, vortices trap in positions of largest diamagnetic susceptibility in these striae. Given the rich interplay of different orders in this material system and its known sensitivity to epitaxial strain, we propose phase separation as a possible origin of these features and discuss scenarios in which that might arise.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Holmium-doped fibre amplifier operating at 2.1 μm

A small-signal holmium-doped fibre amplifier is demonstrated. The seed source is a cw holmium-doped fibre laser whose output power is modulated by an electro-optical modulator. The maximum gain reached (wavelength, 2.1 μm; power, 0.25 mW; pulse duration, 100 ns; pulse repetition rate, 1 μs) is 28.5 dB. (lasers)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Reinvestigation of crystal symmetry and fluctuations in La 2 CuO 4

New surprises continue to be revealed about La 2 CuO 4 , the parent compound of the original cuprate superconductor. In this study we present neutron scattering evidence that the structural symmetry is lower than commonly assumed. The static distortion results in anisotropic Cu-O bonds within the CuO 2 planes; such anisotropy is relevant to pinning charge stripes in hole-doped samples. Associated with the extra structural modulation is a soft phonon mode. If this phonon were to soften completely, the resulting change in CuO 6 octahedral tilts would lead to weak ferromagnetism. Hence, we suggest that this mode may be the “chiral” phonon inferred from recent studies of the thermal Hall effect. We also note the absence of interaction between the antiferromagnetic spin waves and low-energy optical phonons, in contrast to what is observed in hole-doped samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Evolution of charge order topology across a magnetic phase transition in cuprate superconductors

Charge order is now accepted as an integral constituent of cuprate high-temperature superconductors, one that is intimately related to other electronic instabilities including antiferromagnetism and superconductivity. Unlike conventional Peierls density waves, the charge correlations in cuprates have been predicted to display a rich momentum space topology depending on the underlying fermiology. However, charge order has only been observed along the high-symmetry Cu–O bond directions. Here, using resonant soft X-ray scattering, we investigate the evolution of the full momentum space topology of charge correlations in T'-(Nd,Pr) 2 CuO 4 as a function of electron doping. We report that, when the parent Mott insulator is doped, charge correlations first emerge with full rotational symmetry in momentum space, indicating glassy charge density modulation in real space possibly seeded by local defects. At higher doping levels, the orientation of charge correlations is locked to the Cu–O bond directions, restoring a more conventional long-ranged bidirectional charge order. Through charge susceptibility calculations, we reproduce the evolution in topology of charge correlations across the antiferromagnetic phase boundary and propose a revised phase diagram of T -Ln 2 CuO 4 with a superconducting region extending toward the Mott limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗