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At least 199 records · Page 11

A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

Lee, Richard Q.↗

High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array

High-speed (1 Gbit/x) dual-wavelength demultiplexing and detection in a monolithic linear array of superlattice p-i-n photodetectors in a waveguide configuration is demonstrated. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum-confined Stark effect in the superlattice p-i-n diodes.

Larsson, A.↗

Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

Bhasin, K. B.↗

A 30-GHz monolithic receiver

Several monolithic integrated circuits have been developed to make a 30-GHz receiver. The receiver components include a low-noise amplifier (LNA), an IF amplifier, a mixer, and a phase shifter. The LNA has a 7-dB noise figure with over 17 dB of associated gain. The IF amplifier has a 13-dB gain with a 30-dB control range. The mixer has a conversion loss of 10.5 dB. The phase shifter has a 180-deg phase shift control and a minimum insertion loss of 1.6 dB.

Liu, Louis C. T.↗

30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

Bauhahn, P.↗

Frequency stability and offset locking of a laser-diode-pumped Nd:YAG monolithic nonplanar ring oscillator

The frequency stability of laser-diode-pumped, monolithic Nd:YAG solid-state unidirectional nonplanar ring oscillators was studied by heterodyne measurements. CW single-axial- and transverse-mode power of 25 mW at 1064 nm was obtained at a slope efficiency of 19 percent. Two independent oscillators were offset-locked at 17 MHz with frequency fluctuations of less than + or - 40 kHz for periods of 8 min.

Kane, Thomas J.↗

Monolithic microwave integrated circuit technology for advanced space communication

Future Space Communications subsystems will utilize GaAs Monolithic Microwave Integrated Circuits (MMIC's) to reduce volume, weight, and cost and to enhance system reliability. Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and development of a number of these devices operating from Ku through Ka band will be discussed along with anticipated potential applications.

Ponchak, George E.↗

Monolithic ceramic analysis using the SCARE program

The Structural Ceramics Analysis and Reliability Evaluation (SCARE) computer program calculates the fast fracture reliability of monolithic ceramic components. The code is a post-processor to the MSC/NASTRAN general purpose finite element program. The SCARE program automatically accepts the MSC/NASTRAN output necessary to compute reliability. This includes element stresses, temperatures, volumes, and areas. The SCARE program computes two-parameter Weibull strength distributions from input fracture data for both volume and surface flaws. The distributions can then be used to calculate the reliability of geometrically complex components subjected to multiaxial stress states. Several fracture criteria and flaw types are available for selection by the user, including out-of-plane crack extension theories. The theoretical basis for the reliability calculations was proposed by Batdorf. These models combine linear elastic fracture mechanics (LEFM) with Weibull statistics to provide a mechanistic failure criterion. Other fracture theories included in SCARE are the normal stress averaging technique and the principle of independent action. The objective of this presentation is to summarize these theories, including their limitations and advantages, and to provide a general description of the SCARE program, along with example problems.

Manderscheid, Jane M.↗

Development of 20 GHz monolithic transmit modules

The history of the development of a transmit module for the band 17.7 to 20.2 GHz is presented. The module was to monolithically combine, on one chip, five bits of phase shift, a buffer amplifier and a power amplifier to produce 200 mW to the antenna element. The approach taken was MESFET ion implanted device technology. A common pinch-off voltage was decided upon for each application. The beginning of the total integration phases revealed hitherto unencountered hazards of large microwave circuit integration which were successfully overcome. Yield and customer considerations finally led to two separate chips, one containing the power amplifiers and the other containing the complete five bit phase shifter.

Higgins, J. A.↗

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Connolly, Denis J.↗

Modelling ignition characteristics of rich H2/O2 mixture in a monolithic catalytic reactor

Ignition of rich hydrogen-oxygen mixture in a monolithic catalytic reactor is studied using a transient combustion model. The model assumes a quasi-steady gas phase and a thermally-thin substrate. The ignition time lag is due to the thermal inertia of the substrate. One-step global chemical reaction is assumed both on the surface and in the gas phase. An effectiveness factor is introduced to account for the transition from a kinetically-limited catalytic surface reaction to a diffusion-limit one during ignition. Results presented include a catalytic ignition boundary, ignition delay time and the transient response in the catalytic bed.

Tien, Ta-Ching↗

Monolithic III-V/Silicon Spatial Light Modulator

Current techniques for growth of device-quality GaAs on silicon substrates enables fabrication of silicon-based version of photodiode-coupled spatial light modulator. Monolithic photodiode-coupled light-modulator array constructed on silicon substrate by growing InAs/GaAs multiple-quantum-wells over silicon PIN diode layer. Intermediate GaAs buffer layer confines attice-misfit dislocations to vicinity of silicon. Use of silicon makes available wider range of auxiliary on-chip signal-processing circuitry for coding and decoding of data, addition or subtraction of brightness levels, spatial reformatting, and rescaling.

Maserjian, Joseph↗

Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers

Monolithic two-dimensional arrays of GaAs/AlGaAs diode lasers with light emission normal to the surface have been obtained by fabricating edge-emitting quantum-well lasers coupled with external mirrors that deflect the radiation from the laser facets by 90 degrees. Linear arrays of GaAs/AlGaAs devices in which one of the laser facets was cleaved while the other facet and an adjacent 45 degree deflector were formed by ion-beam-assisted etching (IBAE) have been reported. For the arrays reported in this section, IBAE was used to form all of the laser facets and the deflecting mirrors. A mass transport process of the type employed to fabricate two-dimensional arrays of GaInAsP/InP lasers coupled with deflecting mirrors is not known for AlGaAs.

Source record↗

Monolithic Solid Oxide Fuel Cell development

The Monolithic Solid Oxide Fuel Cell (MSOFC) is an oxide-ceramic structure in which appropriate electronic and ionic conductors are fabricated in a honeycomb shape similar to a block of corrugated paperboard. These electronic and ionic conductors are arranged to provide short conduction paths to minimize resistive losses. The power density achievable with the MSOFC is expected to be about 8 kW/kg or 4 kW/L, at fuel efficienceis over 50 percent, because of small cell size and low resistive losses in the materials. The MSOFC operates in the range of 700 to 1000 C, at which temperatures rapid reform of hydrocarbon fuels is expected within the nickel-YSZ fuel channels. Tape casting and hot roll calendering are used to fabricate the MSOFC structure. The performance of the MSOFC has improved significantly during the course of development. The limitation of this system, based on materials resistance alone without interfacial resistances, is 0.093 ohm-sq cm area-specific resistance (ASR). The current typical performance of MSOFC single cells is characterized by ASRs of about 0.4 to 0.5 ohm-sq cm. With further development the ASR is expected to be reduced below 0.2 ohm-sq cm, which will result in power levels greater than 1.4 W/sq cm. The feasibility of the MSOFC concept was proven, and the performance was dramatically improved. The differences in thermal expansion coefficients and firing shrinkages among the fuel cell materials were minimized. As a result of good matching of these properties, the MSOFC structure was successfully fabricated with few defects, and the system shows excellent promise for development into a practical power source.

Myles, K. M.↗

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗

Efficient monolithic MgO:LiNbO3 singly resonant optical parametric oscillator

A monolithic MgO:LiNbO3 singly resonant optical parametric oscillator (OPO) was operated as both a standing-wave and a ring-geometry resonator. The OPO was pumped by the second harmonic of an amplified single-mode diode-laser-pumped Nd:YAG laser. Pump depletions of greater than 60 percent were observed when pumping four times greater than the 35-W threshold. The OPO output at the resonant signal tuned with temperature from 834 to 958 nm, while the corresponding idler tuned from 1.47 to 1.2 microns. The spectral characteristics of the OPO signal output and the relative merits of a standing wave versus a ring geometry are discussed.

Kozlovsky, W. J.↗

Monolithic watt-level millimeter-wave diode-grid frequency tripler array

In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

Hwu, R. J.↗

Monolithic nonplanar ring lasers - Resistance to optical feedback

The sensitivity of a monolithic unidirectional nonplanar ring laser to optical feedback depends on the polarization eigenmodes of the resonator, which are complicated functions of the resonator geometry. Resonator geometries that increase the loss difference between the two directions of propagation around the ring improve the resistance of the lasers to optical feedback. Here, measurements on Nd:YAG nonplanar ring lasers having two different ring geometries are discussed. Currently, 1 percent optical feedback produces a 10 percent reduction in useful output power for the more feedback-resistant oscillator, a tenfold improvement over previous designs.

Nilsson, Alan C.↗