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At least 199 records · Page 11

Nano-Array Integrated Structured Catalysts: A New Paradigm upon Conventional Wash-Coated Monolithic Catalysts?

The monolithic catalyst, namely the structured catalyst, is one of the important categories of catalysts used in various fields, especially in catalytic exhaust after-treatment. Despite its successful application in conventional wash-coated catalysts in both mobile and stationary catalytic converters, washcoat-based technologies are facing multi-fold challenges, including: (1) high Pt-group metals (PGM) material loading being required, driving the market prices; (2) less-than ideal distribution of washcoats in typically square-shaped channels associated with pressure drop sacrifice; and (3) far from clear correlations between macroscopic washcoat structures and their catalytic performance. To tackle these challenges, the well-defined nanostructure array (nano-array)-integrated structured catalysts which we invented and developed recently have been proven to be a promising class of cost-effective and efficient devices that may complement or substitute wash-coated catalysts. This new type of structured catalysts is composed of honeycomb-structured monoliths, whose channel surfaces are grown in situ with a nano-array forest made of traditional binary transition metal oxide support such as Al 2 O 3 , CeO 2 , Co 3 O 4 , MnO 2 , TiO 2 , and ZnO, or newer support materials including perovskite-type ABO3 structures, for example LaMnO 3 , LaCoO 3 , LaNiO, and LaFeO 3 . The integration strategy parts from the traditional washcoat technique. Instead, an in situ nanomaterial assembly method is utilized, such as a hydro (solva-) thermal synthesis approach, in order to create sound structure robustness, and increase ease and complex-shaped substrate adaptability. Specifically, the critical fabrication procedures for nano-array structured catalysts include deposition of seeding layer, in situ growth of nano-array, and loading of catalytic materials. The generic methodology utilization in both the magnetic stirring batch process and continuous flow reactor synthesis offers the nano-array catalysts with great potential to be scaled up readily and cost-effectively. The tunability of the structure and catalytic performance could be achieved through morphology and geometry adjustment and guest atoms and defect manipulation, as well as composite nano-array catalyst manufacture. Excellent stabilities under various conditions were also present compared to conventional wash-coated catalysts.

36 MATERIALS SCIENCE↗

Monolithic Polyepoxide Membranes for Nanofiltration Applications and Sustainable Membrane Manufacture

The present work details the development of carbon fiber-reinforced epoxy membranes with excellent rejection of small-molecule dyes. It is a proof-of-concept for a more sustainable membrane design incorporating carbon fibers, and their recycling and reuse. 4,4′-methylenebis(cyclohexylamine) (MBCHA) polymerized with either bisphenol-A-diglycidyl ether (BADGE) or tetraphenolethane tetraglycidylether (EPON Resin 1031) in polyethylene glycol (PEG) were used to make monolithic membranes reinforced by nonwoven carbon fibers. Membrane pore sizes were tuned by adjusting the molecular weight of the PEG used in the initial polymerization. Membranes made of BADGE-MBCHA showed rejection of Rose Bengal approaching 100%, while tuning the pore sizes substantially increased the rejection of Methylene Blue from ~65% to nearly 100%. The membrane with the best permselectivity was made of EPON-MBCHA polymerized in PEG 300. It has an average DI flux of 4.48 LMH/bar and an average rejection of 99.6% and 99.8% for Rose Bengal and Methylene Blue dyes, respectively. Degradation in 1.1 M sodium hypochlorite enabled the retrieval of the carbon fiber from the epoxy matrix, suggesting that the monolithic membranes could be recycled to retrieve high-value products rather than downcycled for incineration or used as a lower selectivity membrane. The mechanism for epoxy degradation is hypothesized to be part chemical and part physical due to intense swelling stress leading to erosion that leaves behind undamaged carbon fibers. The retrieved fibers were successfully used to make another membrane exhibiting similar performance to those made with pristine fibers.

Polymer Science↗

Shape and Rotational Motion Models for Tumbling and Monolithic Asteroid 2012 TC{sub 4}: High Time Resolution Light Curve with the Tomo-e Gozen Camera

We present visible and near-infrared observations of a near-Earth object (NEO), 2012 TC{sub 4}. The NEO 2012 TC{sub 4} approached close to Earth at a distance of about 50,000 km in 2017 October. This close approach provided a practical exercise for planetary defense. This apparition was also an appropriate opportunity to investigate 2012 TC{sub 4}, which is a monolithic asteroid. We conducted the observation campaign of 2012 TC{sub 4} using six small- and medium-sized telescopes. The multiband photometry analysis showed the taxonomic class of 2012 TC{sub 4} to be an X type. In particular, we successfully obtained the high time resolution light curve of 2012 TC{sub 4} with the Tomo-e Gozen camera, which is the world’s first wide-field CMOS camera, mounted on the 1.05 m Schmidt telescope at Kiso Observatory. The shape and rotational motion models of 2012 TC{sub 4} were derived from the light curve. When 2012 TC{sub 4} was assumed to be a triaxial ellipsoid, the rotational and precession periods were 8.47 ± 0.01 minutes and 12.25 ± 0.01 minutes, respectively, with the long-axis mode. This indicates that 2012 TC{sub 4} is a tumbling and monolithic asteroid. The shape models showed the plausible axial lengths to be 6.2 × 8.0 × 14.9 m or 3.3 × 8.0 × 14.3 m. The flattened and elongated shape indicates that 2012 TC{sub 4} is a fragment produced by an impact event. We also estimated the excitation timescale, which implied that the impact event happened within ∼3 × 10{sup 5} yr and 2012 TC{sub 4} has a fresh surface.

79 ASTRONOMY AND ASTROPHYSICS↗

Monolithic microcircuit techniques and processes

Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

Kennedy, B. W.↗

Noise spectra for monolithic detector arrays

Following a brief review of nonstationary processes, the paper deals with mixed stationary processes as they apply to the determination of the power density spectrum for monolithic detector arrays. A rather direct method is developed for realizing the noise power spectrum by transforming the corresponding autocorrelation function. Although the measurements presented pertain to a 96-element photodiode linear array, the method outlined should be applicable to any monolithic device. Theoretical and experimental results are provided.

Finkel, M. W.↗

Monolithic InSb imaging arrays with charge-coupled device /CCD/ readout

The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager.

Miller, W. E.↗

Monolithic ceramic capacitors for high reliability applications

Monolithic multi-layer ceramic dielectric capacitors are widely used in high reliability applications in spacecraft, launch vehicles, and military equipment. Their relatively low cost, wide range of values, and package styles are attractive features that result in high usage in electronic circuitry in these applications. Design and construction of monolithic ceramic dielectric capacitors, defects that can lead to failure, and methods for defect detection that are being incorporated in military specifications are discussed.

Thornley, E. B.↗

Advanced digital modulation: Communication techniques and monolithic GaAs technology

Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case.

Wilson, S. G.↗

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Spitzer, M. B.↗

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

Bhasin, K. B.↗

10-30 GHz monolithic GaAs travelling-wave divider/combiner

A four-way monolithic GaAs traveling-wave power divider/combiner has been designed, fabricated and evaluated. With a design center frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.

Tserng, H. Q.↗

Ka-band monolithic gain control amplifier

A monolithic gain control amplifier for Ka-band has been developed based on 0.25 micron-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.

Geddes, J.↗

A 30 GHz monolithic receive module technology assessment

This report is a technology assessment relevant to the 30 GHz Monolithic Receive Module development. It is based on results obtained on the present NASA Contract (NAS3-23356) as well as on information gathered from literature and other industry sources. To date the on-going Honeywell program has concentrated on demonstrating the so-called interconnected receive module which consists of four monolithic chips - the low noise front-end amplifier (LNA), the five bit phase shifter (PS), the gain control amplifier (GC), and the RF to IF downconverter (RF/IF). Results on all four individual chips have been obtained and interconnection of the first three functions has been accomplished. Future work on this contract is aimed at a higher level of integration, i.e., integration of the first three functions (LNA + PS + GC) on a single GaAs chip. The report presents the status of this technology and projections of its future directions.

Geddes, J.↗

Design of catalytic monoliths for closed-cycle carbon dioxide lasers

A computer program was written that allows the design of catalytic monoliths for closed-cycle carbon dioxide lasers. Using design parameters obtained from workers at NASA Langley Research Center and from the literature, several specific monoliths were designed and the results were communicated to the research group working on this project at Langley. Two oral presentations were made at NASA-sponsored workshops - at Langley in January 1988 and in Gainesville, Florida in May 1988.

Herz, Richard K.↗

Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

Sokolov, V.↗

Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNbO3 external resonant cavities

56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.

Kozlovsky, William J.↗

Watt-level millimeter-wave monolithic diode-grid frequency multipliers

Wall-level CW solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35 percent at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.

Hwu, J. R.↗

GaAs circuits for monolithic optical controller

GaAs circuits for use in a fully monolithic 1 Gb/s optical controller have been developed and tested. The circuits include photodetectors, transimpedance amplifiers and 1:16 demultiplexers that can directly control the phase of MMIC phase shifters. The entire chip contains approximately 300 self-aligned gate E/D-mode MESFETs. The MESFETs have one micron-wide gate and the E-mode FETs typically have transconductance of 200 ms/mm. Results of simulations and tests are reported. Also, the design and layout of the fully monolithic chip is discussed.

Gustafson, G.↗