Three-Dimensional Modeling of Power Distribution Systems
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Monolithic Power Amplifiers Covering 70-115 GHz
A number of monolithic W-band power amplifiers have been developed for local oscillators of the Far Infrared and Sub-millimeter Telescope.
power amplifiers monolithic microwave integrated c↗
HEMT Amplifiers and Equipment for their On-Wafer Testing
Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.
Fung, King man↗
First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies
Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.
monolithic microwave integrated circircuit↗
T/R Multi-Chip MMIC Modules for 150 GHz
Modules containing multiple monolithic microwave integrated-circuit (MMIC) chips have been built as prototypes of transmitting/receiving (T/R) modules for millimeter-wavelength radar systems, including phased-array radar systems to be used for diverse purposes that could include guidance and avoidance of hazards for landing spacecraft, imaging systems for detecting hidden weapons, and hazard-avoidance systems for automobiles. Whereas prior landing radar systems have operated at frequencies around 35 GHz, the integrated circuits in this module operate in a frequency band centered at about 150 GHz. The higher frequency (and, hence, shorter wavelength), is expected to make it possible to obtain finer spatial resolution while also using smaller antennas and thereby reducing the sizes and masses of the affected systems.
Samoska, Lorene A.↗
Differential InP HEMT MMIC Amplifiers Embedded in Waveguides
Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have prohibitively low impedances. Yet another advantage afforded by the virtual ground of the differential configuration is elimination of the need for a ground plane and, hence, elimination of the need for back-side metallization of the MMIC chip. In turn, elimination of the back-side metallization simplifies fabrication, reduces parasitic capacitances, and enables mounting of the MMIC in the electric-field plane ("E-plane") of a waveguide. E-plane mounting is consistent with (and essential for the utility of) the finline configuration, in which transmission lines lie on a dielectric sheet in the middle of a broad side of the waveguide. E-plane mounting offers a combination of low loss and ease of assembly because no millimeter-wave wire bonds or transition substrates are required. Moreover, because there is no ground plane behind the MMIC, the impedance for the detrimental even (single-ended) mode is high, suppressing coupling to that mode. Still another advantage of E-plane mounting is that the fundamental waveguide mode is inherently differential, eliminating the need for a balun to excite the differential mode.
Kangaslahti, Pekka↗
MMIC Amplifier Produces Gain of 10 dB at 235 GHz
The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.
Dawson, Douglas↗
MMIC Amplifiers for 90 to 130 GHz
This brief describes two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 - 140 GHz). These amplifiers were designed specifically for local-oscillator units in astronomical radio telescopes such as the Atacama Large Millimeter Array (ALMA). They could also be readily adapted for use in electronic test equipment, automotive radar systems, and communications systems that operate between 90 and 130 GHz.
Samoska, Lorene↗
Update on Waveguide-Embedded Differential MMIC Amplifiers
There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.
Kangaslahti, Pekka↗
High-Aperture-Efficiency Horn Antenna
A horn antenna (see Figure 1) has been developed to satisfy requirements specific to its use as an essential component of a high-efficiency Ka-band amplifier: The combination of the horn antenna and an associated microstrip-patch antenna array is required to function as a spatial power divider that feeds 25 monolithic microwave integrated-circuit (MMIC) power amplifiers. The foregoing requirement translates to, among other things, a further requirement that the horn produce a uniform, vertically polarized electromagnetic field in its patches identically so that the MMICs can operate at maximum efficiency. The horn is fed from a square waveguide of 5.9436-mm-square cross section via a transition piece. The horn features cosine-tapered, dielectric-filled longitudinal corrugations in its vertical walls to create a hard boundary condition: This aspect of the horn design causes the field in the horn aperture to be substantially vertically polarized and to be nearly uniform in amplitude and phase. As used here, cosine-tapered signifies that the depth of the corrugations is a cosine function of distance along the horn. Preliminary results of finite-element simulations of performance have shown that by virtue of the cosine taper the impedance response of this horn can be expected to be better than has been achieved previously in a similar horn having linearly tapered dielectric- filled longitudinal corrugations. It is possible to create a hard boundary condition by use of a single dielectric-filled corrugation in each affected wall, but better results can be obtained with more corrugations. Simulations were performed for a one- and a three-corrugation cosine-taper design. For comparison, a simulation was also performed for a linear- taper design (see Figure 2). The three-corrugation design was chosen to minimize the cost of fabrication while still affording acceptably high performance. Future designs using more corrugations per wavelength are expected to provide better field responses and, hence, greater aperture efficiencies.
Pickens, Wesley↗
High-Performance Solid-State W-Band Power Amplifiers
The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.
Gaier, Todd↗
GEOSTAR-II: A Prototype Water Vapor Imager/Sounder for the Path Mission
We describe the development and progress of the GeoSTAR-II risk reduction activity for the NASA Earth Science Decadal Survey PATH Mission. The activity directly addresses areas of technical risk including the system design, low noise receiver production, sub-array development, signal distribution and digital signal processing.
Monolithic Microwave Integrated Circuit (MMIC)↗
W-band Heterodyne Receiver Module with 27 K Noise Temperature
We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using 35nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27-45 K over the frequency band of 75-111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80-110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.
heterodyne module↗
Low Noise Amplifier Receivers from Millimeter Wave Atmospheric Remote Sensing
We currently achieve 3.4 dB noise figure at 183GHz and 2.1 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.
millimeter wave radiometers↗
Initial Results from the GeoSTAR-II Laboratory Demonstration
The Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) team recently concluded its second Earth Science Technology Office (ESTO) IIP-07, "GeoSTAR technology development and risk reduction for PATH". The major accomplishments during this project at JPL were:1) Demonstrate performance and scalability of the 183 GHz receivers 2) Local oscillator phasing architecture and technology 3) Subarray design validation including feedhorns, manifolds and alignment 4) System demonstration of signal distribution topology and measurements. Significant progress has been made to retiring risk of the various subsystems.
synthetic aperture radiometry↗
The Correlation Radiometer - A New Application in MM-Wave Total Power Radiometry
We describe the design and performance of a 180 GHz correlation radiometer suitable for remote sensing. The radiometer provides continuous comparisons between a the observed signal and a reference load to provide stable radiometric baselines. The radiometer was assembled and tested using parts from the GeoSTAR-II instrument and is fully compatible with operation in a synthetic aperture radiometer or as a standalone technology for use in microwave sounding and imaging. This new radiometer was tested over several days easily demonstrating the required 6 hour stability requirement for observations of mean brightness temperature for a geostationary instrument.
Monolithic Microwave Integrated Circuit (MMIC)↗
W-Band InP Wideband MMIC LNA With 30K Noise Temperature
This paper describes a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range.
low↗
Monolithic Microwave Switching Matrix
Gallium arsenide integrated-circuit chip switches any of three microwave input signals to any of three output ports. Measuring 4.9 mm on side, chip contains nine field-effect transistor (FET) crosspoint switches. Housed in custom-designed package with standard connectors for easy integration into system. FET's on chip operated as passive switches and consume no static power and insignificant amounts of switching power. Chip module cascades with similar modules into large arrays handling as many as 100 inputs and 100 outputs. Applications include switching and routing vast amounts of data between computers at extremely high speed. On communications satellite, chip switches microwave signals to and from Earth stations and other satellites.
Fujikawa, Gene↗