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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Incorporating Potassium Citrate to Improve the Performance of Tin‐Lead Perovskite Solar Cells

Abstract Easy‐to‐form tin vacancies at the buried interface of tin‐lead perovskites hinder the performance of low‐bandgap perovskite solar cells (PSCs). Here, a synergistic strategy by incorporating potassium citrate (PC) into the poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole‐transport layer to passivate the buried interface of Sn‐Pb PSCs is reported. PC neutralizes the acidity of PEDOT:PSS and stabilizes the perovskite front surface, enhancing device stability. Citrate moieties coordinate with Sn 2+ on the buried perovskite surface, preventing Sn 2+ oxidation and suppressing defect formation. Additionally, potassium cations incorporate into Sn‐Pb perovskites, enhancing crystallinity and passivating halide defects. The combined benefits enable efficient low‐bandgap Sn‐Pb PSCs with a power conversion efficiency of 22.7% and a high open‐circuit voltage of 0.894 V. Using this method, 26.1% efficiency for all‐perovskite tandem solar cells is demonstrated. These results emphasize the significance of buried interface passivation in developing efficient and stable Sn‐Pb PSCs and all‐perovskite tandem solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

Abstract Inverted metamorphic Ga 0.3 In 0.7 As photovoltaic converters with sub‐0.60 eV bandgaps grown on InP and GaAs are presented. Threading dislocation densities are 1.3 ± 0.6 × 10 6 and 8.9 ± 1.7 × 10 6 cm −2 on InP and GaAs, respectively. The devices generate open‐circuit voltages of 0.386 and 0.383 V, respectively, under irradiance producing a short‐circuit current density of ≈10 A cm −2 , yielding bandgap‐voltage offsets of 0.20 and 0.21 V. Power and broadband reflectance measurements are used to estimate thermophotovoltaic (TPV) efficiency. The InP‐based cell is estimated to yield 1.09 W cm −2 at 1100 °C versus 0.92 W cm −2 for the GaAs‐based cell, with efficiencies of 16.8 versus 9.2%. The efficiencies of both devices are limited by sub‐bandgap absorption, with power weighted sub‐bandgap reflectances of 81% and 58%, respectively, the majority of which is assumed to occur in the graded buffers. The 1100 °C TPV efficiencies are estimated to increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0–2.3 µm atmospheric window. Peak laser power converter efficiencies of 36.8% and 32.5% are estimated under 2.0 µm irradiances of 1.86 and 2.81 W cm −2 , respectively.

14 SOLAR ENERGY↗
DOE OSTI2024

High‐Performance Ternary Organic Solar Cells with Enhanced Luminescence Efficiency and Miscibility Enabled by Two Compatible Acceptors

Abstract The ternary strategy has proven to be an effective method for improving the efficiency of organic solar cells (OSCs). However, designing and selecting the third component still pose challenges. In this study, this issue is addressed by focusing on the PBDB‐T:Y18‐F binary system and introducing a new, strong luminescent, asymmetric small‐molecule acceptor (SMA) called L8‐CBIC‐Cl, which shares a similar skeleton with Y18‐F. The similarity in molecular framework facilitates good compatibility between the two acceptors, resulting in the formation of an alloy‐like acceptor phase. Furthermore, the norbornenyl‐modified end group in L8‐CBIC‐Cl contributes to its strong luminescent properties, which in turn leads to a low non‐radiative energy loss and a high open‐circuit voltage. Consequently, the PBDB‐T:L8‐CBIC‐Cl:Y18‐F based ternary devices realize a high power conversion efficiency (PCE) up to 17.01%, which is higher than PBDB‐T:Y18‐F device (14.49%). Importantly, L8‐CBIC‐Cl exhibits a good universality as a guest acceptor in other three binary systems (D18:Y6, D18:BTP‐eC9‐4F, and D18:L8‐BO). The D18:L8‐BO:L8‐CBIC‐Cl device shows an impressive efficiency of 19%. The work demonstrates that employing SMA with a high PLQY and better miscibility with host acceptor as the third component has a great potential for developing high‐efficiency ternary OSCs.

Chemistry↗
DOE OSTI2024

Elucidate the Thermal Degradation Mechanism of Y6‐Based Organic Solar Cells by Establishing Structure‐Property Correlation

Abstract Organic solar cells (OSCs) achieved performance booming benefiting from the emerging of non‐fullerene acceptors, while inadequate device stability hampers their further application. At present, the prevalent belief attributes the inevitable thermal degradation of OSC device to morphological instability caused by excessive phase separation and crystallization in the active layer during device operation. However, it is inapplicable for state‐of‐art Y6‐based devices which strongly degrade before large‐scale morphology change. Herein, an alternative degradation mechanism is elucidated wherein molecular orientation change and demixing induced performance degradation in Y6‐based devices. Distinct from IT‐4F‐based counterpart, Y6‐based devices suffer severe thermal degradation dominated by open‐circuit voltage (V OC ) and fill factor (FF) losses. TheV OC loss is attributed to molecular orientation transition of polymer donors from edge‐on to face‐on, leading to a strong built‐in potential reduction and increase in non‐radiative loss due to energy level shifting. As forFFdecay, discontinuous acceptor phases result in electron mobility decrease by over orders of magnitude, originating from the increased molecular stacking and phase separation. This work reveals the thermal degradation mechanism for Y6‐based devices and correlates the photoelectric properties with morphology instability, which will offer guidance for improving the stability of high‐performance OSCs.

Chemistry↗
DOE OSTI2024

Correlation of Band Bending and Ionic Losses in 1.68 eV Wide Band Gap Perovskite Solar Cells

Abstract Perovskite solar cells (PSCs) are promising for high‐efficiency tandem applications, but their long‐term stability, particularly due to ion migration, remains a challenge. Despite progress in stabilizing PSCs, they still fall short compared to mature technologies like silicon. This study explores how different piperazinium salt treatments using iodide, chloride, tosylate, and bistriflimide anions affect the energetics, carrier dynamics, and stability of 1.68 eV bandgap PSCs. Chloride‐based treatments achieved the highest power conversion efficiency (21.5%) and open‐circuit voltage (1.28 V), correlating with stronger band bending and n‐type character at the surface. At the same time, they showed reduced long‐term stability due to increased ionic losses. Tosylate‐treated devices offered the best balance, retaining 96.4% efficiency after 1000 h (ISOS‐LC‐1I). These findings suggest that targeted surface treatments can enhance both efficiency and stability in PSCs.

14 SOLAR ENERGY↗
DOE OSTI2023

Stability of Cu(In x Ga 1− x )Se 2 Solar Cells Utilizing RbF Postdeposition Treatment under a Sulfur Atmosphere

Alkali halide postdeposition treatments (PDTs) have become a key tool to maximize efficiency in Cu(In x Ga 1− x )Se 2 (CIGS) photovoltaics. RbF PDTs have emerged as an alternative to the more common Na‐ and K‐based techniques. This study utilizes temperature‐dependent current–voltage ( JVT ) measurements to study a unique RbF PDT performed in a S atmosphere. The samples are measured before and after 6 months in a desiccator to study device stability. Both samples contain Na and K which diffuse from the soda–lime glass substrate. A reference sample and a RbF + S PDT sample both show the development of a rear contact barrier after aging. The contact barrier is higher for the RbF + S PDT sample, leading to decreased current in forward bias. Series resistance is also higher in the RbF + S PDT device which leads to lower fill factor. However, after aging the reference sample has a larger decrease in open‐circuit voltage ( V OC ). Ideality factor measurements suggest Shockley–Read–Hall recombination dominates both samples. V OC versus temperature and a temperature‐dependent activation energy model are used to calculate diode activation energies for each sample condition. Both techniques produce similar values that indicate recombination primarily occurs within the bulk absorber.

14 SOLAR ENERGY↗
DOE OSTI2023

Unidirectional Sidechain Engineering to Construct Dual‐Asymmetric Acceptors for 19.23 % Efficiency Organic Solar Cells with Low Energy Loss and Efficient Charge Transfer

Abstract Achieving both high open‐circuit voltage ( V oc ) and short‐circuit current density ( J sc ) to boost power‐conversion efficiency (PCE) is a major challenge for organic solar cells (OSCs), wherein high energy loss ( E loss ) and inefficient charge transfer usually take place. Here, three new Y‐series acceptors of mono‐asymmetric asy‐YC11 and dual‐asymmetric bi‐asy‐YC9 and bi‐asy‐YC12 are developed. They share the same asymmetric D 1 AD 2 (D 1 =thieno[3,2‐ b ]thiophene and D 2 =selenopheno[3,2‐ b ]thiophene) fused‐core but have different unidirectional sidechain on D 1 side, allowing fine‐tuned molecular properties, such as intermolecular interaction, packing pattern, and crystallinity. Among the binary blends, the PM6 : bi‐asy‐YC12 one has better morphology with appropriate phase separation and higher order packing than the PM6 : asy‐YC9 and PM6 : bi‐asy‐YC11 ones. Therefore, the PM6 : bi‐asy‐YC12‐based OSCs offer a higher PCE of 17.16 % with both high V oc and J sc , due to the reduced E loss and efficient charge transfer properties. Inspired by the high V oc and strong NIR‐absorption, bi‐asy‐YC12 is introduced into efficient binary PM6 : L8‐BO to construct ternary OSCs. Thanks to the broadened absorption, optimized morphology, and furtherly minimized E loss , the PM6 : L8‐BO : bi‐asy‐YC12‐based OSCs achieve a champion PCE of 19.23 %, which is one of the highest efficiencies among these annealing‐free devices. Our developed unidirectional sidechain engineering for constructing bi‐asymmetric Y‐series acceptors provides an approach to boost PCE of OSCs.

Chemistry↗
DOE OSTI2022

Highly Stable, Low Redox Potential Quinone for Aqueous Flow Batteries**

Abstract Aqueous organic redox flow batteries are promising candidates for large‐scale energy storage. However, the design of stable and inexpensive electrolytes is challenging. Here, we report a highly stable, low redox potential, and potentially inexpensive negolyte species, sodium 3,3′,3′′,3′′′‐((9,10‐anthraquinone‐2,6‐diyl)bis(azanetriyl))tetrakis(propane‐1‐sulfonate) (2,6‐N‐TSAQ), which is synthesized in a single step from inexpensive precursors. Pairing 2,6‐N‐TSAQ with potassium ferrocyanide at pH=14 yielded a battery with the highest open‐circuit voltage, 1.14 V, of any anthraquinone‐based cell with a capacity fade rate <10 %/yr. When 2,6‐N‐TSAQ was cycled at neutral pH, it exhibited two orders of magnitude higher capacity fade rate. The great difference in anthraquinone cycling stability at different pH is interpreted in terms of the thermodynamics of the anthrone formation reaction. This work shows the great potential of organic synthetic chemistry for the development of viable flow battery electrolytes and demonstrates the remarkable performance improvements achievable with an understanding of decomposition mechanisms.

Wu, Min↗
DOE OSTI2025

Stability and Performance of 3d Transition Metal Carbo‐Sulfides: A Density Functional Theory Exploration for Li‐Ion Battery Anodes

As the demand for high-performance and reliable energy storage devices continues to rise, identifying new anode materials is crucial for advancing Li-ion battery (LIB) technology. Inspired by recent experimental breakthroughs in synthesizing two-dimensional transition metal carbo-chalcogenides (2D-TMCCs), density functional theory calculations are performed to systematically explore their sulfide variants (TM 2 S 2 C) spanning all 3d transition metals in three possible phases. Through comprehensive evaluations of thermodynamic, dynamic, mechanical, and thermal stabilities, seven stable 2D-TMCC candidates are identified, four of which exhibit superior battery performance. Notably, V-based 2D-TMCCs across all three phases deliver moderate open-circuit voltages (OCV), efficient Li diffusion, and substantial capacities, making them promising candidates for industrial applications without requiring specific phase controls. A Cr-based 2D-TMCC (with sulfur atoms above carbon atoms) offers the highest capacity of 515.40 mAh g −1 , the lowest Li diffusion barrier, and an optimal OCV, highlighting its appealing potential as an anode material for LIBs. Furthermore, significant Li–Li spacing and pronounced electron delocalization in these four 2D-TMCCs suggest a reduced risk of dendrite formation. This work expands the 2D-TMCC family and identifies up-and-coming candidates for next-generation LIB anodes.

anode materials↗
DOE OSTI2020

Realization of an Asymmetric Non‐Aqueous Redox Flow Battery through Molecular Design to Minimize Active Species Crossover and Decomposition

Abstract This communication presents a mechanism‐based approach to identify organic electrolytes for non‐aqueous redox flow batteries (RFBs). Symmetrical flow cell cycling of a pyridinium anolyte and a cyclopropenium catholyte resulted in extensive capacity fade due to competing decomposition of the pyridinium species. Characterization of this decomposition pathway enabled the rational design of next‐generation anolyte/catholyte pairs with dramatically enhanced cycling performance. Three factors were identified as critical for slowing capacity fade: (1) separating the anolyte–catholyte in an asymmetric flow cell using an anion exchange membrane (AEM); (2) moving from monomeric to oligomeric electrolytes to limit crossover through the AEM; and (3) removing the basic carbonyl moiety from the anolyte to slow the protonation‐induced decomposition pathway. Ultimately, these modifications led to a novel anolyte–catholyte pair that can be cycled in an AEM‐separated asymmetric RFB for 96 h with >95 % capacity retention at an open circuit voltage of 1.57 V.

Shrestha, Anuska↗
DOE OSTI2023

Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.

14 SOLAR ENERGY↗
DOE OSTI2024

Enhancing Direct Electrochemical CO 2 Electrolysis by Introducing A-Site Deficiency for the Dual-Phase Pr(Ca)Fe(Ni)O 3-δ Cathode

High-temperature CO 2 electrolysis via solid oxide electrolysis cells (CO 2 –SOECs) has drawn special attention due to the high energy convention efficiency, fast electrode kinetics, and great potential in carbon cycling. However, the development of cathode materials with high catalytic activity and chemical stability for pure CO 2 electrolysis is still a great challenge. In this work, A-site cation deficient dual-phase material, namely (Pr 0.4 Ca 0.6 ) x Fe 0.8 Ni 0.2 O 3-δ (PCFN, x = 1, 0.95, and 0.9), has been designed as the fuel electrode for a pure CO 2 –SOEC, which presents superior electrochemical performance. Among all these compositions, (Pr 0.4 Ca 0.6 ) 0.95 Fe 0.8 Ni 0.2 O 3-δ (PCFN95) exhibited the lowest polarization resistance of 0.458 Ω cm 2 at open-circuit voltage and 800 °C. The application of PCFN95 as the cathode in a single cell yields an impressive electrolysis current density of 1.76 A cm -2 at 1.5 V and 800 °C, which is 76% higher than that of single cells with stoichiometric Pr 0.4 Ca 0.6 Fe 0.8 Ni 0.2 O 3-δ (PCFN100) cathode. The effects of A-site deficiency on materials' phase structure and physicochemical properties are also systematically investigated. Such an enhancement in electrochemical performance is attributed to the promotion of effective CO 2 adsorption, as well as the improved electrode kinetics resulting from the A-site deficiency.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2021

Modeling of transport in carrier-selective contacts in silicon heterojunction solar cells

High-performance silicon heterojunction (SHJ) solar cells use carrier-selective contact structures based on hydrogentated amorphous Si (a-Si:H) to maximize collection of photogenerated carriers. The high open circuit voltages observed experimentally in SHJ cells require that the carrier-selective contacts provide selectivity and passivation. However, a microscopic understanding of the dynamics of carrier transport through the a-Si layer is currently lacking. In this paper, we explicitly simulate the transport of holes across the a-Si:H(i) layer using a novel kinetic Monte Carlo approach. The hole-selective contact structure investigated in this paper uses p-type doped a-Si:H(p) and intrinsic a-Si:H(i) on an n-type crystalline silicon wafer, where the selectivity is provided by the a-Si:H(p) and the passivation is provided by the a-Si:H(i). However, in addition to the passivation provided by the a-Si:H(i), this layer also creates a potential barrier to the collection of photogenerated holes. There have been experimental studies in the literature that have suggested that multi-phonon processes are the main transport mechanism that assists in the transport of holes across the intrinsic a-Si:H barrier. Simulations presented here show that multi-phonon injection of holes into the a-Si:H(i) layer is the rate limiting step for transport across the a-Si:H(i) layer. Our results indicate that multi-phonon transport is strongly dependent on the electric field at the a-Si:H(i)/c-Si heterointerface as well. Transport simulations presented in this paper are consistent with experimental findings that multi-phonon processes limit transport across the a-Si:H(i) layer and are responsible for photocurrent suppression at the a-Si:H(i)/c-Si heterointerface when these processes are slower than the associated incident hole flux due to photo-excitation.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Results from an international interlaboratory study on light‐ and elevated temperature‐induced degradation in solar modules

Abstract This paper reports the results of an international interlaboratory comparison study on light‐ and elevated temperature‐induced degradation (LETID) on crystalline silicon photovoltaic (PV) modules. A large global network of PV module manufacturers and PV testing laboratories collaborated to design a protocol for LETID detection and screen a large and diverse set of prototype modules for LETID. Results across labs indicate the reproducibility of LETID testing is likely within ±1% of maximum power (P MP ). In intentionally engineered LETID‐sensitive modules, mean degradation after the prescribed detection stress is roughly 6% P MP . In other module types the LETID sensitivity is smaller, and in some we observe essentially negligible degradation attributable to LETID. In LETID‐sensitive modules, both open‐circuit voltage (V OC ) and short‐circuit current (I SC ) degrade by a roughly similar magnitude. We observe, as do previous studies, that LETID affects each cell in a module differently. An investigation of the potential mismatch losses caused by nonuniform LETID degradation found that mismatch loss is insignificant compared to the estimated loss of cell I SC , which drives loss of module I SC . Overall, this work has helped inform the creation of a forthcoming standard technical specification for LETID testing of PV modules, IEC TS 63342 ED1, and should aid in the interpretation of results from that and other LETID tests.

14 SOLAR ENERGY↗
DOE OSTI2022

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

We report the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE) with AM1.5G efficiencies of 26.0% for single-junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near-unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open-circuit voltage (V OC ) of 1.06 V and long-wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm 2 for the 1J and 2J, respectively. The AlInP also results in a top cell V OC boost of ~40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter. Secondary-ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor-phase epitaxy (HVPE)-grown device efficiencies with state-of-the-art devices grown by other epitaxial methods in the near future.

14 SOLAR ENERGY↗
DOE OSTI2022

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Abstract Recently, the significant improvements in the surface and contact passivation of silicon (Si) solar cells as well as their bulk quality have shifted their operating point to higher injections. Hence, they are less dependent on wafer doping. This shift opens an opportunity of using high‐resistivity wafers for practical photovoltaic applications, introducing a promising approach to push the cell efficiency towards the intrinsic limit and to improve the module reliability by increasing the cell breakdown voltage. Therefore, insights into the performance of Si solar cells using high‐resistivity wafers at various operating temperatures are of significant interest. In this study, we investigate the temperature‐ and illumination‐dependent performance of Si heterojunction (SHJ) solar cells using a wide range of wafer resistivities (between 3 and 1000 Ω⋅cm). Although a reduction in the passivation quality of the passivating contacts is observed at elevated temperature, the impact on the temperature coefficient of the open‐circuit voltage (TC V oc )—the dominant contributor to the temperature coefficient (TC) of the cell efficiency—is very limited. Their TC V oc are still dominated by the temperature dependence of the effective intrinsic carrier concentration. Furthermore, we also find that the investigated cells are more sensitive to temperature variation at lower illumination intensities. It is noteworthy that the efficiency of the cells fabricated using high‐resistivity wafers is comparable to that of the reference cells at any given temperature, highlighting the potential of using high‐resistivity wafers for solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

Over the past decade, silicon solar cells with carrier-selective passivating contacts based on polysilicon capping an ultra-thin silicon oxide (commonly known as TOPCon or POLO) have demonstrated promising efficiency potentials and are regarded as an evolutionary upgrade to the PERC (passivated emitter and rear contact) cells in manufacturing. The polysilicon-based passivating contacts also exhibit excellent gettering effects that relax the wafer and cleanroom requirements to some extent. Here, in this work, we experimentally explore the impact of bulk iron contamination and polysilicon gettering on the passivation quality of the polysilicon/oxide structure and the resulting solar cells performance. Results show that both n- and p-type polysilicon/oxide passivating contacts are not affected by iron gettering, demonstrating robust and stable passivation quality. However, for a very high bulk iron contamination (1 × 10 13 cm −3 ), the accumulated iron in the p-type lightly boron-doped emitter in crystalline silicon would degrade the emitter saturation current density. This can cause a reduction in both open-circuit voltage and short-circuit current. Meanwhile, this very high iron content (1 × 10 13 cm −3 ) can further degrade the fill factor and temperature coefficient of the cells. On the other hand, for an initial iron content of 2 × 10 12 cm −3 , which should be well above the iron level in the current industrial Czochralski silicon wafers, the resulting cells demonstrate similar performance as the control group with no intentional iron contamination. This work brings attention to both the benefits of polysilicon gettering effects as well as the potential degradation due to the accumulation of metal impurities in the p-type emitter region.

14 SOLAR ENERGY↗
DOE OSTI2025

Understanding ERE and iVOC Metrics for Graded CdSeTe Absorbers

PL-based external radiative efficiency (ERE) and implied open-circuit voltage (iVOC) metrics were introduced for thin-film solar absorbers to better understand the voltage deficit and diagnose losses in solar cells. Traditionally, elevated ERE and iVOC measurements are associated with diminished recombination within the solar device, a rationale heavily reliant on the assumption of a uniform bandgap and high carrier mobilities in the absorber. Recently, very low mobilities in CdSeTe absorbers (< 1 cm2/(V.s)) were measured using the light-induced transient grading technique. In this study, we use a detailed numerical model of iVOC to investigate the possible reasons of elevated iVOC in realistic CdSeTe absorbers with a graded Se profile. In particular, we examine how the bandgap nonuniformity and the reduced hole mobility in graded CdSeTe absorbers affect iVOC measurements. We show that high iVOC may result from inflated quasi-Fermi level splitting in the high-Se region in the front part of a CdSeTe absorber with slow hole transport. We reproduce the experimentally reported 360 mV increase in iVOC-VOC gap with reduced doping using a model with sub-1 cm2/(V.s) hole mobility in the high-Se region. Based on our results, we conclude that the iVOC metric (or ERE metric) should not be used as a sole metric of CdSeTe absorber quality. We discuss possible ways to extract useful information from the iVOC-VOC gap by supplementing the front-side illumination measurements with back-side illumination measurements.

14 SOLAR ENERGY↗