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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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190 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Compact, Low-Force, Low-Noise Linear Actuator

Actuators are critical to all the robotic and manipulation mechanisms that are used in current and future NASA missions, and are also needed for many other industrial, aeronautical, and space activities. There are many types of actuators that were designed to operate as linear or rotary motors, but there is still a need for low-force, low-noise linear actuators for specialized applications, and the disclosed mechanism addresses this need. A simpler implementation of a rotary actuator was developed where the end effector controls the motion of a brush for cleaning a thermal sensor. The mechanism uses a SMA (shape-memory alloy) wire for low force, and low noise. The linear implementation of the actuator incorporates a set of springs and mechanical hard-stops for resetting and fault tolerance to mechanical resistance. The actuator can be designed to work in a pull or push mode, or both. Depending on the volume envelope criteria, the actuator can be configured for scaling its volume down to 4 2 1 cm3. The actuator design has an inherent fault tolerance to mechanical resistance. The actuator has the flexibility of being designed for both linear and rotary motion. A specific configuration was designed and analyzed where fault-tolerant features have been implemented. In this configuration, an externally applied force larger than the design force does not damage the active components of the actuator. The actuator housing can be configured and produced using cost-effective methods such as injection molding, or alternatively, its components can be mounted directly on a small circuit board. The actuator is driven by a SMA -NiTi as a primary active element, and it requires energy on the order of 20 Ws(J) per cycle. Electrical connections to points A and B are used to apply electrical power in the resistive NiTi wire, causing a phase change that contracts the wire on the order of 5%. The actuation period is of the order of a second for generating the stroke, and 4 to 10 seconds for resetting. Thus, this design allows the actuator to work at a frequency of up to 0.1 Hz. The actuator does not make use of the whole range of motion of the SMA material, allowing for large margins on the mechanical parameters of the design. The efficiency of the actuator is of the order of 10%, including the margins. The average dissipated power while driving at full speed is of the order of 1 W, and can be scaled down linearly if the rate of cycling is reduced. This design produces an extremely quiet actuator; it can generate a force greater than 2 N and a stroke greater than 1 cm. The operational duration of SMA materials is of the order of millions of cycles with some reduced stroke over a wide temperature range up to 150 C.

Badescu, Mircea↗
DOE OSTI2020

Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of complementary metal–oxide–semiconductor (CMOS) compatible and scaled microelectronic applications, including memory, low-voltage transistors, and infrared sensors, among others. An outstanding challenge hindering the implementation of this material is polarization instability during field cycling. Herein, the nanoscale phenomena contributing to both polarization fatigue and wake-up are reported. Using synchrotron X-ray diffraction, the conversion of non-polar tetragonal and polar orthorhombic phases to a non-polar monoclinic phase while field cycling devices comprising noble metal contacts is observed. This phase exchange accompanies a diminishing ferroelectric remanent polarization and provides device-scale crystallographic evidence of phase exchange leading to ferroelectric fatigue in these structures. A reduction in the full width at half-maximum of the superimposed tetragonal (101) and orthorhombic (111) diffraction reflections is observed to accompany wake-up in structures comprising tantalum nitride and tungsten electrodes. Combined with polarization and relative permittivity measurements, the observed peak narrowing and a shift in position to lower angles is attributed, in part, to a phase exchange of the non-polar tetragonal to the polar orthorhombic phase during wake-up. These results provide insight into the role of electrodes in the performance of hafnium oxide-based ferroelectrics and mechanisms driving wake-up and fatigue, and demonstrate a non-destructive means to characterize the phase changes accompanying polarization instabilities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction in photolithography wavelength, traditional spin-on resists still support the fabrication of the most advanced, sub-5 nm node logic and memory devices using EUV lithography (EUVL) (λ = 13.5 nm). However, trade-off between resolution, sensitivity, and roughness in the conventional resists pose a critical challenge in the race towards device downscaling to 1 nm node. While great efforts are being made to improve spin-on EUV photoresist performance, there has been emergence of new approaches focused on developing novel resists via vapor-phase processing routes, such as atomic layer deposition (ALD) and its analogs. This review summarizes recent advances in EUVL photoresist development based on ALD and its derivative techniques, which include ALD-based inorganic–organic dry resists and hybrid resists synthesized by infiltrating conventional spin-on resists. Despite being in the early stage, initial studies have shown the great potential of ALD applications in EUVL photoresist development.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Gravitropism in higher plant shoots. VI. Changing sensitivity to auxin in gravistimulated soybean hypocotyls

Although the Cholodny-Went model of auxin redistribution has been used to explain the transduction phase of gravitropism for over 60 years, problems are apparent, especially with dicot stems. An alternative to an auxin gradient is a physiological gradient in which lower tissues of a horizontal stem become more sensitive than upper tissues to auxin already present. Changes in tissue sensitivity to auxin were tested by immersing marked Glycine max Merrill (soybean) hypocotyl sections in buffered auxin solutions (0, 10(-8) to 10(-2) molar indoleacetic acid) and observing bending and growth of upper and lower surfaces. The two surfaces of horizontal hypocotyl sections responded differently to the same applied auxin stimulus; hypocotyls bent up (lower half grew more) in buffer alone or in low auxin levels, but bent down (upper half grew more) in high auxin. Dose-response curves were evaluated with Michaelis-Menten kinetics, with auxin-receptor binding analogous to enzyme-substrate binding. Vmax for the lower half was usually greater than that for the upper half, which could indicate more binding sites in the lower half. Km of the upper half was always greater than that of the lower half (unmeasurably low), which could indicate that upper-half binding sites had a much lower affinity for auxin than lower-half sites. Dose-response curves were also obtained for sections scrubbed' (cuticle abraded) on top or bottom before immersion in auxin, and gravitropic memory' experiments of L. Brauner and A. Hagar (1958 Planta 51: 115-147) were duplicated. [1-14C]Indoleacetic acid penetration was equal into the two halves, and endogenous plus exogenously supplied (not radiolabeled) free auxin in the two halves (by gas chromatography-selected ion monitoring-mass spectrometry) was also equal. Thus, differential growth occurred without free auxin redistribution, contrary to Cholodny-Went but in agreement with a sensitivity model.

NASA Discipline Number 29-20↗
DOE OSTI2023

Magnetic frustration driven by conduction carrier blocking in Nd 2 Co 0.85 Si 2.88

The intermetallic compound Nd 2 Co 0.85 Si 2.88 having a triangular lattice could be synthesized in single phase only with defect crystal structure. Investigation through different experimental techniques indicate the presence of two magnetic transitions in the system. As verified experimentally and theoretically, the high-temperature transition $T_H$ ~ 140 K is associated with the development of ferromagnetic interaction between itinerant Co moments, whereas the low-temperature transition at $T_L$ ~ 6.5 K is due to the coupling among Nd–4$\textit{f}$ and Co–3$\textit{d}$ moments, which is antiferromagnetic in nature. Detailed studies of temperature-dependent dc magnetic susceptibility, field dependence of isothermal magnetization, nonequilibrium dynamical behavior, viz., magnetic relaxation, aging effect, magnetic-memory effect, and temperature dependence of heat capacity, along with density functional theory (DFT) calculations, suggest that the ground state is magnetically frustrated spin glass in nature, having competing magnetic interactions of equivalent energies. DFT results further reveal that the 3$\textit{d}$/5$\textit{d}$-conduction carriers are blocked in the system and act as a barrier for the 4$\textit{f}$–4$\textit{f}$ RKKY interactions, resulting in spin frustration. Presence of vacancy defects in the crystal are also conducive to the spin frustration. This is an unique mechanism of magnetic frustration, not emphasized so far in any of the ternary $R_2TX_3$ ($\textit{R}$ = rare earth, $\textit{T}$ = transition elements, and $\textit{X}$ = Si, Ge, In) type compounds. Due to the competing character of the itinerant 3$\textit{d}$ and localized 4$\textit{f}$ moments, the compound exhibits anomalous field dependence of magnetic coercivity. Further, the system also exhibits a considerable magnetic entropy change of –Δ$S_M$ ~ 13.3 J/kg K with a relative cooling power (RCP) of 220 J/kg and adiabatic temperature change $ΔT_{\text{ad}}$ of 6 K for magnetic field change of 70 kOe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1999

Thermal Radiator Pointing for International Space Station

In order to provide thermal radiation environments that result in adequate beat rejection, the single-phase, liquid ammonia (NH3) heat rejection system on the International Space Station (ISS) requires that its two thermal radiator wings be dynamically rotated as the ISS travels through its orbit. This paper discusses the closed-loop, thermal radiator pointing system that is used on ISS to ensure adequate heat rejection by the radiators, while preventing freezing of the ammonia under low heat loads and cold-environmental conditions. Although initial designs used an open-loop approach for radiator pointing, concerns about performance robustness, algorithm complexity, memory requirements, and sustaining support drove the development of a more robust, simpler, closed-loop system. Hence, the challenge of the closed-loop system was to utilize existing sensors, actuators and computers to fit into the existing hardware and software architecture of the ISS. Using a proportional-integral (PI) control architecture with limited output and an anti-windup integrator, the temperature of the ammonia coming out of the radiator is measured and controlled by adjusting the radiator wing orientation. The radiator wing orientation for the local minimum environment is fed forward to the control system, and the closed-loop controller is used to generate a bias off of that local minimum environment in order to heat up the ammonia when necessary to avoid freezing. In the earth's shadow, the controller is suspended and the radiator wing is oriented to face the earth, the local maximum thermal environment which further prevents freezing of the ammonia. This control architecture is shown to provide adequate heat rejection and avoid freezing of the ammonia, even though the physical system consists of large transport delays and time-varying dynamics which change dramatically due to orbit motion and variable heat loads.

Green, Scott↗
DOE OSTI2024

Effects of carbon concentration on the local atomic structure of amorphous GST

Ge-Sb-Te (GST) alloys are leading phase-change materials for data storage due to the fast phase transition between amorphous and crystalline states. Ongoing research aims at improving the stability of the amorphous phase to improve retention. This can be accomplished by the introduction of carbon as a dopant to Ge 2 Sb 2 Te 5 , which is known to alter the short- and mid-range structure of the amorphous phase and form covalently bonded C clusters, both of which hinder crystallization. The relative importance of these processes as a function of C concentration is not known. Here we used molecular dynamics simulation based on density functional theory to study how carbon doping affects the atomic structure of GST-C. Carbon doping results in an increase in tetrahedral coordination, especially of Ge atoms, and this is known to stabilize the amorphous phase. We observe an unexpected, non-monotonous trend in the number of tetrahedral bonded Ge with the amount of carbon doping. Our simulations show an increase in the number of tetrahedral bonded Ge up to 5 at.% C, after which the number saturates and begins to decrease above 14 at.% C. The carbon atoms aggregate into clusters, mostly in the form of chains and graphene flakes, leaving less carbon to disrupt the GST matrix at higher carbon concentrations. Different degrees of carbon clustering can explain divergent experimental results for recrystallization temperature for carbon doped GST.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Spontaneous Valley Polarization of Itinerant Electrons

Memory or transistor devices based on an electron’s spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit an electron’s valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to 1 by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon, which is akin to Bloch spin ferromagnetism, arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, twofold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Finally, our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Probing Cretaceous-Paleogene crustal thickness in southern Tibet using quartz-zircon chronobarometry

Knowledge of the crustal thickness history of southern Tibet during the India-Asia collision is key to understanding what deformation mechanisms accommodated northward propagating crustal shortening. Thermoisotopic models suggest that a relatively thin margin of southern Asia persisted from ca. 200 to 45 Ma whereas trace element paleodepth proxies are interpreted to indicate a thinning phase from ca. 100 to 65 Ma when the crust reached ∼30 km-thickness. As neither of these methods directly measures crustal thickness, resolution of this conflict awaits development of a method that can. Here, in this study, we place bounds on the thickening history of southern Tibet using coupled quartz-zircon thermobarometry and U-Pb geochronology of granitoid plutons in the Gangdese batholith. We find that crustal thicknesses were as high (or higher) as 60–75 km at 65 Ma, or 10–15 Ma prior to the onset of hard continental collision. Magmatic inflation in the lower crust likely contributed to crustal thickening and thermal weakening of the lower crust, suggesting that pure shear in the lower crust was likely the primary accommodation mechanism for N-S shortening during collision. These data are in partial agreement with results of thermoisotopic models of crustal thickness but contradict thickness histories derived from empirical trace element proxies.

Chronobarometry↗
NASA NTRS2011

Nanoscale Deformable Optics

Several missions and instruments in the conceptual design phase rely on the technique of interferometry to create detectable fringe patterns. The intimate emplacement of reflective material upon electron device cells based upon chalcogenide material technology permits high-speed, predictable deformation of the reflective surface to a subnanometer or finer resolution with a very high degree of accuracy. In this innovation, a layer of reflective material is deposited upon a wafer containing (perhaps in the millions) chalcogenic memory cells with the reflective material becoming the front surface of a mirror and the chalcogenic material becoming a means of selectively deforming the mirror by the application of heat to the chalcogenic material. By doing so, the mirror surface can deform anywhere from nil to nanometers in spots the size of a modern day memory cell, thereby permitting realtime tuning of mirror focus and reflectivity to mitigate aberrations caused elsewhere in the optical system. Modern foundry methods permit the design and manufacture of individual memory cells having an area of or equal to the Feature (F) size of the design (assume 65 nm). Fabrication rules and restraints generally require the instantiation of one memory cell to another no closer than 1.5 F, or, for this innovation, 90 nm from its neighbor in any direction. Chalcogenide is a semiconducting glass compound consisting of a combination of chalcogen ions, the ratios of which vary according to properties desired. It has been shown that the application of heat to cells of chalcogenic material cause a large alteration in resistance to the range of 4 orders of magnitude. It is this effect upon which chalcogenidebased commercial memories rely. Upon removal of the heat source, the chalcogenide rapidly cools and remains frozen in the excited state. It has also been shown that the chalcogenide expands in volume because of the applied heat, meaning that the coefficient of expansion of chalcogenic materials is larger than 1. In this innovation, chalcogenidebased cells are addressed (as though they are a memory), and heated and cooled according to well-established criteria. In doing so, the exact size of chalcogenide cell deformation is known and predictable; therefore, the deformation of the reflective surface is, likewise, known and predictable. Control electronics can also be implemented so that a closed-loop feedback can be maintained. Changing the contents of the chalcogenide memory cells can compensate for any change in environmental effects that might cause a change in optical path. This real-time control provides significant control and stability in use conditions.

Strauss, Karl F.↗