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Design of a compact, radiation tolerant AlGaAs Geiger photodiode
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High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. Furthermore, we detect the state of a trapped Sr + ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450 μs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.
Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-N Avalanche Photodiode
Not provided.
In-situ gamma radiation testing of 2.4 micron wavelength extended InGaAs photodiodes at dry ice temperatures
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Quantum efficiency of black silicon photodiodes at VUV wavelengths
Not Available
Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes.
Abstract not provided.
Gallium Arsenide X-ray Photodiodes for Ultrafast Physics Applications.
Abstract not provided.
Burst-Mode Operation of Silicon Photonic Waveguide Integrated Germanium Avalanche Photodiodes
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Waveguide Integrated Avalanche Photodiodes for Quantum Applications
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Evaluating photodiodes for use in optical sensing applications
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Increasing the response of PIN photodiodes to the ultraviolet
Solid state device uses sapphire windows and avoids coatings which absorb ultraviolet radiation and ultimately alter detector geometry. Ultimate solution for ultraviolet response is geometry with maximum peripheral area and horizontal field structure to draw out photon induced current carriers.
Improved InSb photodiode preamplifier circuit
Integrator compensates for background noise in Fourier spectrometer. Compensation is automatic.
A two-dimensional intensified photodiode array for imaging spectroscopy
The Johns Hopkins University is currently developing an instrument to fly aboard NASA's Space Shuttle as a Spartan payload in the late 1980s. This Spartan free flyer will obtain spatially resolved spectra of faint extended emission line objects in the wavelength range 750-1150 A at about 2-A resolution. The use of two-dimensional photon counting detectors will give simultaneous coverage of the 400 A spectral range and the 9 arc-minute spatial resolution along the spectrometer slit. The progress towards the flight detector is reported here with preliminary results from a laboratory breadboard detector, and a comparison with the one-dimensional detector developed for the Hopkins Ultraviolet Telescope. A hardware digital centroiding algorithm has been successfully implemented. The system is ultimately capable of 15-micron resolution in two dimensions at the image plane and can handle continuous counting rates of up to 8000 counts/s.
Synchronous Photodiode-Signal Sampler
Synchronous sampling circuit increases signal-to-noise ratio of measurements of chopped signal of known phase and frequency in presence of low-frequency or dc background noise. Used with linear array of photoelectric sensors for locating edge of metal plate. Multiplexing circuit cycles through 16 light-emitting-diode/photodiode pairs, under computer control. Synchronized with multiplexer so edge detector makes one background-subtracted signal measurement per emitter/detector pair in turn.
Photodiode array position sensing of a model in a magnetic suspension wind tunnel
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