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At least 199 records · Page 11

Multi-physics modeling of tungsten collector probe samples during the WEST C4 He campaign

Abstract We describe the results of a multi-scale, multi-physics modeling assessment of SOLPS-ITER, hPIC2, RustBCA and Xolotl, in which five single-crystal tungsten (W) samples were placed in a reciprocating collector probe and exposed to helium (He) plasma in the WEST fusion device. In our models, we considered a pure (100 %) He plasma, as well as one with oxygen (O) present (95% He 5% O) corresponding to the impurity concentration estimated during the C4 He campaign in WEST. Our SOLPS simulations approximately match experimental reciprocating Langmuir probe plasma measurements of plasma density and temperature. Using these plasma parameters as input, hPIC2 and RustBCA predict that the presence of oxygen impurities lead to a 15%–20% decrease in ion and heat fluxes to the surface, and an order of magnitude higher sputtering yields (compared with a pure He plasma). Xolotl predictions for the response of tungsten to plasma surface interactions (PSIs) agree with experimental LAMS analysis, and indicate large near-surface He concentrations, which quickly decay with depth. Our model also shows an increasing role of erosion—in removing the near-surface He—with time. Overall, slightly higher retention is predicted for tungsten exposed to a pure He plasma, with the largest differences in the near-surface gas content caused by the large oxygen-induced erosion. This highlights the important role that impurities play in PSI. Therefore, future work will focus on providing a fully self-consistent description of oxygen (and oxides, etc.) in our models, through multi-species implementation in GITR and inclusion of oxygen and tungsten oxide formation in Xolotl.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Atmospheric Pressure Plasma Deposition of TiO2: A Review

Atmospheric pressure plasma (APP) deposition techniques are useful today because of their simplicity and their time and cost savings, particularly for growth of oxide films. Among the oxide materials, titanium dioxide (TiO2) has a wide range of applications in electronics, solar cells, and photocatalysis, which has made it an extremely popular research topic for decades. Here, we provide an overview of non-thermal APP deposition techniques for TiO2 thin film, some historical background, and some very recent findings and developments. First, we define non-thermal plasma, and then we describe the advantages of APP deposition. In addition, we explain the importance of TiO2 and then describe briefly the three deposition techniques used to date. We also compare the structural, electronic, and optical properties of TiO2 films deposited by different APP methods. Lastly, we examine the status of current research related to the effects of such deposition parameters as plasma power, feed gas, bias voltage, gas flow rate, and substrate temperature on the deposition rate, crystal phase, and other film properties. The examples given cover the most common APP deposition techniques for TiO2 growth to understand their advantages for specific applications. In addition, we discuss the important challenges that APP deposition is facing in this rapidly growing field.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

X-ray spectroscopy of solar flares

After a brief review of the nature of the solar corona, the X-ray output of solar flares is discussed in some detail with particular reference to emission line excitation mechanisms and to the information that can be obtained about the flare plasma from studies of the intensities, profiles and wavelengths of these lines. The X-ray crystal spectrometers on the NASA Solar Maximum Mission spacecraft are described and the interpretation of the spectra obtained with these instruments is discussed.

Culhane, J. L.↗

New Martian Meteorite Is One of the Most Oxidized Found to Date

As of 2013, about 60 meteorites from the planet Mars have been found and are being studied. Each time a new Martian meteorite is found, a wealth of new information comes forward about the red planet. The most abundant type of Martian meteorite is a shergottite; its lithologies are broadly similar to those of Earth basalts and gabbros; i.e., crustal igneous rocks. The entire suite of shergottites is characterized by a range of trace element, isotopic ratio, and oxygen fugacity values that mainly reflect compositional variations of the Martian mantle from which these magmas came. A newly found shergottite, NWA 5298, was the focus of a study performed by scientists within the Astromaterials Research and Exploration Science (ARES) Directorate at the Johnson Space Center (JSC) in 2012. This sample was found in Morocco in 2008. Major element analyses were performed in the electron microprobe (EMP) laboratory of ARES at JSC, while the trace elements were measured at the University of Houston by laser inductively coupled plasma mass spectrometry (ICPMS). A detailed analysis of this stone revealed that this meteorite is a crystallized magma that comes from the enriched end of the shergottite spectrum; i.e., trace element enriched and oxidized. Its oxidation comes in part from its mantle source and from oxidation during the magma ascent. It represents a pristine magma that did not mix with any other magma or see crystal accumulation or crustal contamination on its way up to the Martian surface. NWA 5298 is therefore a direct, albeit evolved, melt from the Martian mantle and, for its lithology (basaltic shergottite), it represents the oxidized end of the shergottite suite. It is thus a unique sample that has provided an end-member composition for Martian magmas.

Hui, Hejiu↗

Effects of cyclic plasma heating on surface damage of micro-porous tungsten

The operating temperature window of solid tungsten (W) is dictated by its Ductile to Brittle Transition Temperature (DBTT) and re-crystallization temperature; roughly between 300-1300 °C. The brittleness of W at lower temperatures is exasperated when it undergoes recrystallization. We investigate here the thermal shock resistance of micro-porous W as a meta-material fabricated in a 3D open-cell network structure. We present experimental results for the effects of cyclic high-enthalpy arc-jet plasma on surface damage in three testing categories. Observed damage includes surface ablation of asperities, melting and solidification of W-fuzz on samples that have been exposed to a prior helium plasma, and micro-cracks at ligament triple junctions. Scanning electron microscope (SEM) observations show more micro-cracking on 54% and 23% foams compared to the 43% ones. In all tested samples, thermal expansion/contraction displacements were accommodated by ligament rotation and a network of micro-cracks. Furthermore, no large through-thickness crack were observed.

36 MATERIALS SCIENCE↗

Advanced low blaze angle x-ray gratings via nanoimprint replication and plasma etch

We developed a new method of making ultra-low blaze angle diffraction gratings for x-ray applications. The method is based on reduction of the blaze angle of a master grating by nanoimprint replication followed by a plasma etch. A master blazed grating with a relatively large blaze angle is fabricated by anisotropic wet etching of a Si single crystal substrate. The surface of the master grating is replicated by a polymer material on top of a quartz substrate by nanoimprinting. Then a second nanoimprinting is performed using the 1st replica as a mold to replicate the saw-tooth surface into a resist layer on top of a Si grating substrate. A reactive ion etch is used to transfer the grating grooves into the Si substrate. The plasma etch provides reduction of the groove depth by a factor defined by the ratio of the etch rates for the resist and Si. We demonstrate reduction of the blaze angle of a master grating by a factor of 5 during fabrication of a 200 lines/mm blazed grating with a blaze angle of 0.2°. We investigated the quality and performance of the fabricated low blaze angle gratings and evaluate process accuracy and reproducibility. The new blaze angle reduction method preserves the planarity of the optical surface of the grating substrate and at the same time provides improvement in the grating groove quality during the reduction process.

47 OTHER INSTRUMENTATION↗

Modeling of a 43 GHz microplasma within a photonic crystal

The electron density (n e ) and argon metastable density (1 s 5 ) of a 43GHz microplasma are obtained using the zero-dimensional plasma kinetics solver (ZDPlasKin®) for an incident power of 160 and 1000mW and argon pressures of 10–600Torr (1.3 ×10 3 to 8.0 × 10 4 Pa). These simulations are compared with previously published experimental data. To determine the self-consistent electric field in the modeled plasma, the three-dimensional millimeter wave fields are computed as a function of electron density using ANSYS EM19.2, HFSS®. This electromagnetic field model is coupled to ZDPlasKin such that any increase in the simulated plasma density correctly attenuates the simulated electric field within the microplasma. The electron density is found to be sensitive to argon gas temperature, so a two-zone temperature model was needed to obtain agreement with experimental measurements. The temperature in the central core of the microplasma was determined by a previous experimental study. That temperature was used as an input to the model for the simulation of volume recombination losses. The outer regions of the microplasma are assumed to be in equilibrium with the walls (300K). This second temperature was used in the model to determine diffusion losses. The modeled electron and metastable densities are of the order 10 20 and 10 18 m –3 , respectively. This is in good agreement with those measured experimentally as long as the two-zone temperature model is used. In the absence of a hot gas core, the modeled three-body recombination rates are excessive and the simulation severely under-predicts the electron density and over-estimates the metastable density. We conclude that the millimeter wave microplasma has a hot core (2500K at 600 Torr) that rarifies the argon gas and effectively reduces three-body recombination. Furthermore, this allows one to achieve high electron density on the order of 10 20 m –3 with only 100mW of wave power.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Diagnostic system design for the Ion Auxiliary Propulsion System (IAPS). Flight tests of two 8 cm mercury ion

The mechanical, thermal, electrical design and the ground test results of four types of detectors are explained. The DSS is designed to measure the thruster efflux material deposition and S/C potential relative to the local plasma in the vicinity of two 8 cm mercury ion thrusters. The DSS consists of two quartz crystal microbalance (QCM) detectors, one potential probe, nine solar cell arrays, seven ion collectors and two electronic packages.

Hurst, E. B.↗

INPIStron switched pulsed power for dense plasma pinches

The inverse plasma switch INPIStron was employed for 10kJ/40kV capacitor bank discharge system to produce focused dense plasmas in hypocycloidal-pinch (HCP) devices. A single unit and an array of multiple HCP's were coupled as the load of the pulsed power circuit. The geometry and switching plasma dynamics were found advantageous and convenient for commutating the large current pulse from the low impedance transmission line to the low impedance plasma load. The pulse power system with a single unit HCP, the system A, was used for production of high temperature plasma focus and its diagnostics. The radially running down plasma dynamics, revealed in image converter photographs, could be simulated by a simple snow-plow model with a correction for plasma resistivity. The system B with an array of 8-HCP units which forms a long coaxial discharge chamber was used for pumping a Ti-sapphire laser. The intense UV emission from the plasma was frequency shifted with dye-solution jacket to match the absorption band of the Ti crystal laser near 500 nm. An untuned laser pulse energy of 0.6 J/pulse was obtained for 6.4 kJ/40 kV discharge, or near 103 times of the explosion limit of conventional flash lamps. For both systems the advantages of the INPIStron were well demonstrated: a single unit is sufficient for a large current (greater than 50 kA) without increasing the system impedance, highly reliable and long life operation and implied scalability for the high power ranges above I(sub peak) = 1 MA and V(sub hold) = 100 kV.

Han, Kwang S.↗

High-Temperature Crystal-Growth Cartridge Tubes Made by VPS

Cartridge tubes for use in a crystal growth furnace at temperatures as high as 1,600 deg. C have been fabricated by vacuum plasma spraying (VPS). These cartridges consist mainly of an alloy of 60 weight percent molybdenum with 40 weight percent rhenium, made from molybdenum powder coated with rhenium. This alloy was selected because of its high melting temperature (approximately equal.2,550 C) and because of its excellent ductility at room temperature. These cartridges are intended to supplant tungsten/nickel-alloy cartridges, which cannot be used at temperatures above approximately equal 1,300 C.

Holmes, Richard↗

Large Single Crystals of V 1– x Mo x O 2 from a Two-Step Chemical Vapor Transport Synthesis

This article details the synthesis of single crystals with the chemical formulas V 1-x Mo x O 2 ( 0 ≤ x ≤ 0.6) using the chemical vapor transport method at high temperatures (850 to 950 °C). These compounds are of interest due to the special relationship between their structure and electronic properties. Understanding this relationship will help guide future efforts in designing energy-saving devices. While some of these compounds have been synthesized before, this is the first time their synthesis has been reported for such a wide range of compounds in the form of bulk single crystals. The single crystal form is required for detailed characterization of the compounds. The materials were characterized chemically and structurally in order to validate the precise chemical compositions that were reported. Characterization methods included x-ray diffraction, inductively-coupled plasma atomic emission spectroscopy, and electron dispersive spectroscopy. The synthesis method is tunable, and the introduction of multiple steps both overcome the previous chemical challenges precluding synthesis of high molybdenum content crystals and allow for the creation of larger single crystals that were otherwise possible. The crystals synthesized this way are suitable for specialized measurements for determining the precise physical properties and atomic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA Tech Briefs, December 2005

Topics covered include: Video Mosaicking for Inspection of Gas Pipelines; Shuttle-Data-Tape XML Translator; Highly Reliable, High-Speed, Unidirectional Serial Data Links; Data-Analysis System for Entry, Descent, and Landing; Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes; Multiple Embedded Processors for Fault-Tolerant Computing; Hybrid Power Management; Magnetometer Based on Optoelectronic Microwave Oscillator; Program Predicts Time Courses of Human/ Computer Interactions; Chimera Grid Tools; Astronomer's Proposal Tool; Conservative Patch Algorithm and Mesh Sequencing for PAB3D; Fitting Nonlinear Curves by Use of Optimization Techniques; Tool for Viewing Faults Under Terrain; Automated Synthesis of Long Communication Delays for Testing; Solving Nonlinear Euler Equations With Arbitrary Accuracy; Self-Organizing-Map Program for Analyzing Multivariate Data; Tool for Sizing Analysis of the Advanced Life Support System; Control Software for a High-Performance Telerobot; Java Radar Analysis Tool; Architecture for Verifiable Software; Tool for Ranking Research Options; Enhanced, Partially Redundant Emergency Notification System; Close-Call Action Log Form; Task Description Language; Improved Small-Particle Powders for Plasma Spraying; Bonding-Compatible Corrosion Inhibitor for Rinsing Metals; Wipes, Coatings, and Patches for Detecting Hydrazines; Rotating Vessels for Growing Protein Crystals; Oscillating-Linear-Drive Vacuum Compressor for CO2; Mechanically Biased, Hinged Pairs of Piezoelectric Benders; Apparatus for Precise Indium-Bump Bonding of Microchips; Radiation Dosimetry via Automated Fluorescence Microscopy; Multistage Magnetic Separator of Cells and Proteins; Elastic-Tether Suits for Artificial Gravity and Exercise; Multichannel Brain-Signal-Amplifying and Digitizing System; Ester-Based Electrolytes for Low-Temperature Li-Ion Cells; Hygrometer for Detecting Water in Partially Enclosed Volumes; Radio-Frequency Plasma Cleaning of a Penning Malmberg Trap; Reduction of Flap Side Edge Noise - the Blowing Flap; and Preventing Accidental Ignition of Upper-Stage Rocket Motors.

Source record↗

Epitaxial Regrowth and Hole Shape Engineering for Photonic Crystal Surface Emitting Lasers (PCSELs)

In the present research, epitaxial regrowth by molecular beam epitaxy (MBE) is investigated as a fabrication process for void-semiconductor photonic crystal (PhC) surface emitting lasers (PCSELs). The PhC is patterned by electron beam lithography (EBL) and inductively coupled plasma (ICP) etch and is subsequently regrown by molecular beam epitaxy to embed a series of voids in bulk semiconductor. Experiments are conducted to investigate the effects of regrowth on air-hole morphology. The resulting voids have a distinct teardrop shape with the radius and depth of the etched hole playing a very critical role in the final regrown void’s dimensions. We demonstrate that specific hole diameters can encourage deposition to the bottom of the voids or to their sidewalls, allowing us to engineer the shape of the void more precisely as is required by the PCSEL design. A 980 nm InGaAs quantum well laser structure is optimized for low threshold lasing at the design wavelength and full device structures are patterned and regrown. An optically pumped PCSEL is demonstrated from this process.

36 MATERIALS SCIENCE↗

Altering the solubility of metal–organic polyhedra via pendant functionalization of Cp 3 Zr 3 O(OH) 3 nodes

Here, the chemistry of zirconium-based metal-organic polyhedra (ZrMOPs) is often limited by their poor solubilities. Despite their attractive features—including high yielding and facile syntheses, predictable topologies, high stability, and tunability—problematic solubilities have caused ZrMOPs to be under-studied and under-applied. Although these cages have been synthesized with a wide variety of carboxylate-based bridging ligands, we explored a new method for ZrMOP functionalization via node-modification, which we hypothesized could influence solubility. Herein, we report ZrMOPs with benzyl-, vinylbenzyl-, and trifluoromethylbenzyl-pendant groups decorating cyclopentadienyl moieties. The series was characterized by 1 H/ 19 F NMR, high-resolution mass spectrometry, infrared spectroscopy, and single-crystal X-ray diffraction. The effects of node functionalities on ZrMOP solubility were quantified using inductively coupled plasma mass spectrometry. Substitution caused a decrease in water solubility, but for certain organic solvents, e.g. DMF, solubility could be enhanced by ~20×, from 16 μM for the unfunctionalized cage to 310 μM for the vinylbenzyl- and trifluoromethylbenzyl-cages.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Development of improved higher-order correction for the NIF opacity spectrometer

X-ray opacity measurements on the National Ignition Facility (NIF) are in the process of reproducing earlier measurements from the Sandia Z Facility, in particular for oxygen and iron plasmas. These measurements have the potential to revise our understanding of the “solar problem” and of the hot degenerate Q class white dwarf structure by probing plasma conditions near the base of their convection zones. Accurate opacity measurements using soft x-ray Bragg crystal spectrometers require correction for higher-order diffraction effects. Extending prior work in this area [Dutra et al., Review of Scientific Instruments 93, 113527 (2022)], we have developed a new method to remove higher-order spectral components from NIF opacity spectrometer data. Furthermore, by modeling absorption and backlighting continuum spectra and subtracting the second- and third-order components from the measured data, we are able to perform this correction while avoiding imprinting first-order model line features onto the data.

79 ASTRONOMY AND ASTROPHYSICS↗

Group-III Nitride Field Emitters

Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.

Bensaoula, Abdelhak↗

Differences in Sb 2 Te 3 growth by pulsed laser and sputter deposition

High quality van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb 2 Te 3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb 2 Te 3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb 2 Te 3 and superlattice crystal qualities observed in the literature. Finally, these results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides.

36 MATERIALS SCIENCE↗