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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Direct-current magnetron fabrication of indium tin oxide/InP solar cells

Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

Coutts, T. J.↗
NASA NTRS1995

Low Intensity Low Temperature (LILT) measurements and coefficients on new photovoltaic structures

Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

Schelman, David A.↗
NASA NTRS2000

High Energy Directly Pumped Ho:YLF Laser

The most commonly used crystal architecture to produce 2 micrometer laser is co-doping Ho and Tm into a single host crystal. In this method, the stored energy transfer from the Tm (3)F4 to the Ho (5)I7 manifold is not fast enough to warrant high efficiency for short pulse applications. By separating the Ho and the Tm ions and doping the Tm in YALO3 and the Ho in YLF, we were able to directly pump the Ho (5)I7 manifold with 1.94 micrometers. The Ho:YLF laser has produced 33 mJ at 2.062 micrometers with a quantum efficiency of 0.88. The performance of each laser will be presented.

Petros, Mulugeta↗
NASA NTRS1991

GaAs solar cell photoresponse modeling using PC-1D V2.1

Photoresponse data of high efficiency GaAs solar cells were analyzed using PC-1D V2.1. The approach required to use PC-1D for photoresponse data analysis, and the physical insights gained from performing the analysis are discussed. In particular, the effect of Al(x)Ga(1-x)As heteroface quality was modeled. Photoresponse or spectral quantum efficiency is an important tool in characterizing material quality and predicting cell performance. The strength of the photoresponse measurement lies in the ability to precisely fit the experimental data with a physical model. PC-1D provides a flexible platform for calculations based on these physical models.

Huber, D. A.↗
NASA NTRS1988

Improvements in InP solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metal-organic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. The best cells, which were those made by ion implantation, show an open-circuit voltage of 873 mV, short-circuit current of 35.7 mA/sq cm, and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. A preliminary investigation of InP solar cells on foreign substrates has been carried out. Although problems have been encountered with doping of the InP by the substrate, cells of 7.1 percent efficiency on silicon and cells of 9.4 percent, efficiency on GaAs have been made.

Keavney, Christopher↗
NASA NTRS1998

Characterization of an Ozone DIAL Receiver for Operation on an Unpiloted Atmospheric Vehicle

Laser remote sensing from aircraft has become a very important technique for observing ozone in the environment. NASA Langley has an active aircraft based research program which presently uses Nd:YAG-pumped dye lasers that are then doubled into the UV to probe both the stratosphere and troposphere for ozone using the differential absorption lidar (DIAL) technique. This large system can only fly on large (NASA DC-8, Electra) aircraft and has been deployed on many missions throughout the world. In the future it will be desirable to fly autonomous, lightweight, compact ozone DIAL instruments on unpiloted atmospheric vehicles (UAV) aircraft. Such aircraft could fly at high altitudes for extended times collecting science data without risk to the operator. Cost for such missions may be substantially reduced over present large aircraft based missions. Presently there are no ozone DIAL systems capable of flying on an UAV aircraft. In order to facilitate UAV missions, small more efficient laser transmitters need to be developed that emit approximately 25mJ near 300nm for each of the DIAL 'on' and 'off' line pulses. Also lightweight, compact DIAL receiver systems need to be built and demonstrated. Such receiver systems may incorporate fiber optic coupled telescopes for maximum light gathering capability per unit area, high quantum efficiency gated photomultiplier tubes with reasonable gain and very narrow-band filters for background light rejection with high light throughput. A compact high-performance 16-bit digitizer and a data storage system are also required. A conceptional design of such a UAV DIAL instrument is presented. Here a pulsed UV laser emits pulses into the atmosphere where elastic scattering occurs which results in light being scattered into the receiver telescope. The subject of this paper is the design, construction and testing of a robust, compact ozone DIAL receiver system that would be a prototype for eventual use in a UAV aircraft.

Goldschmidt, Soenke↗
NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗
NASA NTRS1995

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

Scheiman, David A.↗
NASA NTRS1997

(abstract) Applications of Long-wavelength 256x256 GaAs/Al&subx;Ga&sub1-x;As Quantum Well Infrared Photodetector Hand-held Camera

A 9 (micro)m 256x256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NE(gamma)) of 26 mK has been achieved. In this presentation, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array, its performance in quantum efficience, NA(gamma), minimum resolvable temperature (MRTD), uniformity, operability, and its applications.

GaAs infrared photodetector quantum well QUIP nois↗
NASA NTRS2004

MWIR and LWIR Megapixel QWIP Focal Plane Arrays

A mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal plane array has been demonstrated with excellent imagery. MWIR focal plane has given noise equivalent differential temperature (NETD) of 19 mK at 95K operating temperature with f/2.5 optics at 300K background and LWIR focal plane has given NEDT of 13 mK at 70K operating temperature with same optical and background conditions as MWIR array. Both of these focal plane arrays have shown background limited performance (BLIP) at 90K and 70K operating temperatures with the same optics and background conditions. In this paper, we will discuss their performance in quantum efficiency, NETD, uniformity, and operability.

multi band↗
NASA NTRS1998

Evaluation of Manganese Doped Ca5(PO4)3F as a Near Infrared (1-2 microns) Solid-State Laser Material

Tunable solid-state lasers are of enormous interest for applications including fundamental spectroscopy, remote sensing of the earth atmosphere, medical surgery, and optical communications. Efficient and widely tunable lasers have been developed for the 800-1100 nm region based on transition metal doped insulators like e.g. Ti:Sapphire. The development of transition metal lasers operating at longer wavelength, however, has been limited by the luminescence efficiency of existing materials. We are currently evaluating Mn doped Ca5(PO4)3F as a new solid-state laser material for the 1-2 micro-m region. Preliminary spectroscopic studies revealed that Mn:Ca5(PO4)3F exhibits an intense near infrared luminescence which extends from 1100-1300 nm. Based on lifetime measurements we estimated the luminescence quantum efficiency to be as high as 90 deg./0 at room temperature. The near infrared luminescence properties of Mn doped Ca5(PO4)3F and its potential for solid-state laser applications will be discussed in detail.

Turner, Matthew↗
NASA NTRS2004

Megapixel Multi-band QWIP Focal Plane Arrays

A mid-wavelength 1024x1024 pixel quantum well infrared photodetector (QW) focal plane array has been demonstrated with excellent imagery. Noise equivalent differential temperature (NETD) of 19 mK was achieved at 95K operating temperature with f/2.5 optics at 300K background. This focal plane array has shown background limited performance (BLIP) at 90K operating temperature with the same optics and background conditions. In this paper, we will discuss its performance in quantum efficiency, NETD, uniformity, and operability.

focal plane arrays↗
NASA NTRS1980

Solar-pumped gas laser development

A survey of gas properties through detailed kinetic models led to the identification of critical gas parameters for use in choosing appropriate gas combinations for solar pumped lasers. Broadband photoabsorption in the visible or near UV range is required to excite large volumes of gas and to insure good solar absorption efficiency. The photoexcitation density is independent of the absorption bandwidth. The state excited must be a metastable state which is not quenched by the parent gas. The emission bandwidth must be less than 10 A to insure lasing threshold over reasonable gain lengths. The system should show a high degree of chemical reversibility and an insensitivity to increasing temperature. Other properties such as good quantum efficiency and kinetic efficiency are also implied. Although photoexcitation of electronic vibrational transitions is considered as a possible system if the emission bands sufficiently narrow, it appears that photodissociation into atomic metastables is more likely to result in a successful solar pumped laser system.

Wilson, J. W.↗
NASA NTRS1989

InP shallow-homojunction solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

Keavney, Christopher↗