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NASA NTRS1999

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Biegel, Bryan A.↗

NASA NTRS1985

Structure variation of the index of refraction of GaAs-AlAs superlattices and multiple quantum wells

A detailed calculation of the index refraction of various GaAs-AlAs superlattices is presented for the first time. The calculation is performed by using a hybrid approach which combines the k-p method with the pseudopotential technique. Appropriate quantization conditions account for the influence of the superstructures on the electronic properties of the systems. The results of the model are in very good agreement with the experimental data. In comparison with the index of refraction of the corresponding AlGaAs alloy, characterized by the same average mole fraction of Al, the results indicate that the superlattice index of refraction values attain maxima at the various quantized transition energies. For certain structures the difference can be as large as 2 percent. These results suggest that the waveguiding and dispersion relation properties of optoelectronic devices can be tailored to design for specific optical application by an appropriate choice of the superlattice structure parameters.

Kahen, K. B.↗

NASA NTRS1996

Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

Menkara, H. M.↗

NASA NTRS1986

Dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor

Extremely large current double interface GaAs/In(0.15)Ga(0.85)As/Al(0.15)Ga(0.85)As pseudomorphic modulation-doped field-effect transistors (MODFET's) grown by molecular beam epitaxy were achieved. The 1-micron gate devices studied have peak current levels (430 mA/mm at 300 K and 483mA/mm at 77 K) roughly one and a half to two times that found in single interface pseudomorphic MODFET's. These devices also retain high transconductances over a broad range of gate voltage, peaking at 312 mS/mm at 300 K and 362 mS/mm at 77 K. Excellent microwave performance is also obtained with a maximum frequency of oscillation (f-max) of 37 GHz and a current gain cut-off frequency of as high as 23 GHz at 300 K. An output power level of 14 dBm (1 dB gain compression) was obtained at 6 GHz for a 290-micron gate width. This double interface single quantum well MODFET may be of great importance in millimeter wave power amplifiers.

Henderson, T.↗

NASA NTRS1988

Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

Derry, P. L.↗

NASA NTRS1990

Advanced CCD imager technology for use from 1 to 10,000 A

A low-noise, high-sensitivity charge-coupled-device (CCD) technology for imaging applications extending from the soft X-ray (1 A) to the near-infrared (10,000 A) regimes was developed together with a fabrication technology for making back-illuminated versions of these devices with quantum efficiencies as high as 90 percent from 5000 to 7000 A. The efforts have focused on two devices, a 64 x 64 pixel back-illuminated imager with two output ports that operates at 2000 frames per second with 23 electrons read noise, and a larger device, with 420 x 420 pixel format, designed for lower frame rates with noise as low as 1.5 electrons and used at visible, UV, and X-ray wavelengths. Applications to plasma diagnostics include Thomson scattering and high-frame-rate imaging in the visible, as well as X-ray imaging and bolometry.

Twichell, J. C.↗

NASA NTRS1983

GaInAs-AlInAs heterostructures for optical devices grown by MBE

The band gap of Ga(0.47)In(0.53)As corresponds to an emission wavelength of about 1.65 microns. Lasers have been produced with Al(0.48)In(0.52)As as cladding layers operating at room temperature. The peak emission of Ga(0.47)In(0.53)As can be continuously varied from 1.65 to 1.2 microns by the use of the multiquantum well structures. This range of wavelengths covers the minimum loss and dispersion in optical fibers and will be applicable to integrated optics. Double heterostructure broad area lasers have been fabricated using AlInAs as cladding layers to the GaInAs active layer. Room temperature threshold current densities of 4.3 kA/sq cm have been obtained for lasers with a 4500 A active region. The first data on GaInAs/AlInAs quantum well emitters will be presented. Photoluminescence of 4 K from quantum well layers of 100, 150, and 180 A with 150 A AlInAs barrier layers produced emission at 1.27, 1.35, and 1.41 microns, respectively. Ga(0.47)In(0.52)As quantum well LEDs have also been produced which emit at 1.34 microns.

Welch, D. F.↗

NASA NTRS2001

A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

Bell, L. D.↗

NASA NTRS2001

A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots.

Green, M. L.↗

NASA NTRS1994

A look into the crystal ball: The next 25 years

The PTTI Planning Meeting was born at about the same time as the atomic definition of the unit of time, the second. This use of the cesium resonance was made possible by advances in quantum electronics during the preceding decade which resulted in commercial availability of cesium, rubidium, and hydrogen clocks and frequency standards. Twenty-five years later these types of clocks still are the backbone of time and frequency applications; together with a variety of crystal oscillators, transmitters, and receivers, as well as signal distribution, conditioning and switching systems, atomic clocks are an essential part of the infrastructure of modern navigation and communication technology. The next 25 years undoubtedly will see a pervasive expansion of PTTI into the infrastructure that supports and leverages industrial, social, environmental, defense, and even individual human activities. Speculation as to what capabilities, services, and personal conveniences may become available will be limited by two factors: the degree to which existing device concepts can be made more affordable and reliable, and the ability to miniaturize for purposes of compatibility with electronic integration. With regard to the latter, history teaches us that the required technological breakthrough is unlikely to originate in existing technology; thus, we may expect a paradigm shift in PTTI device concepts not unlike the shift in the 1960s from vacuum tubes to semiconductors.

Hellwig, Helmut↗

NASA NTRS2012

Testing and characterization of an IR CBIRD FPA

High performance IR cameras are in great demand for a variety of applications, including defense (e.g. night vision, missile detection) and space (e.g. imaging at IR wavelengths). IR focal plane arrays (FPAs) are an essential component of IR cameras. An FPA is a collection of detectors at the focal plane of an imaging device, where each detector can be thought of a pixel in the image it is detecting. The FPA in this study is based on Complimentary Barrier Infrared Detectors (CBIRDs). The CBIRD FPA was tested by imaging flat black body targets at three different temperatures, 20ºC, 25ºC, and 30ºC, with images captured using SEIR software. The important figures of merit for an IR FPA, Noise Equivalent Difference Temperature (NEDT), Noise Equivalent Irradiance (NEI), detectivity (D*), responsivity, and quantum Efficiency (QE), were extracted from the image data for each individual detector using a MATLAB program, as was the array Modulation Transfer Function MTF. The test results show a mean NEDT of 16.98mK and an MTF of about 0.34 at the Nyquist frequency. Overall, the array performs well in the MWIR range and takes quality IR images.

Das, Tanya↗

NASA NTRS2009

Detectors for Tomorrow's Instruments

Cryogenically cooled superconducting detectors have become essential tools for a wide range of measurement applications, ranging from quantum limited heterodyne detection in the millimeter range to direct searches for dark matter with superconducting phonon detectors operating at 20 mK. Superconducting detectors have several fundamental and practical advantages which have resulted in their rapid adoption by experimenters. Their excellent performance arises in part from reductions in noise resulting from their low operating temperatures, but unique superconducting properties provide a wide range of mechanisms for detection. For example, the steep dependence of resistance with temperature on the superconductor/normal transition provides a sensitive thermometer for calorimetric and bolometric applications. Parametric changes in the properties of superconducting resonators provides a mechanism for high sensitivity detection of submillimeter photons. From a practical point of view, the use of superconducting detectors has grown rapidly because many of these devices couple well to SQUID amplifiers, which are easily integrated with the detectors. These SQUID-based amplifiers and multiplexers have matured with the detectors; they are convenient to use, and have excellent noise performance. The first generation of fully integrated large scale superconducting detection systems are now being deployed. I will discuss the prospects for a new generation of instruments designed to take full advantage of the revolution in detector technology.

Moseley, Harvey↗

NASA NTRS2008

Superconducting Detectors Come of Age, or Ready to Leave the Lab

Cryogenically cooled superconducting detectors have become essential tools for a wide range of measurement applications, ranging from quantum limited heterodyne detection in the millimeter range to direct searches for dark matter with superconducting phonon detectors operating at 20 mK. Superconducting detectors have several fundamental and practical advantages which have resulted in their rapid adoption by experimenters. Their excellent performance arises in part from reductions in noise resulting from their low operating temperatures, but unique superconducting properties provide a wide range of mechanisms for detection. For example, the steep dependence of resistance with temperature on the superconductor normal transition provides a sensitive thermometer for calorimetric and bolometric applications. Parametric changes in the properties of superconducting resonators provide a mechanism for high sensitivity detection of submillil.neter photons. From a practical point of view, the use of superconducting detectors has grown rapidly because many of these devices couple well to SQUID amplifiers, which are easily integrated with the detectors. These SQUID-based amplifiers and multiplexers have matured with the detectors; they are convenient to use, and have excellent noise performance. The first generation of fully integrated large-scale superconducting detection systems is now being deployed. Improved understanding of the operation of these detectors, combined with rapidly improving fabrication techniques, is quickly expanding the capability of these detectors. I will review the development and application of superconductor-based detectors, the ultimate limits to their performance, and consider prospects for their future applications. Continued advances promise to enable important new measurements in physics, and with appropriate advances in cryogenic infrastn~cturem, ay result in the use of these detectors in everyday monitoring applications.

Moseley, Samuel H.↗

NASA NTRS2005

Physics of Quantum Structures in Photovoltaic Devices

There has been considerable activity recently regarding the possibilities of using various nanostructures and nanomaterials to improve photovoltaic conversion of solar energy. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of three-dimensional arrays of zero-dimensional conductors (i.e., quantum dots) in an ordinary p-i-n solar cell structure. Quantum dots and other nanostructured materials may also prove to have some benefits in terms of temperature coefficients and radiation degradation associated with space solar cells. Two-dimensional semiconductor superlattices have already demonstrated some advantages in this regard. It has also recently been demonstrated that semiconducting quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. Improvement in thin film cells utilizing conjugated polymers has also be achieved through the use of one-dimensional quantum structures such as carbon nanotubes. It is believed that carbon nanotubes may contribute to both the disassociation as well as the carrier transport in the conjugated polymers used in certain thin film photovoltaic cells. In this paper we will review the underlying physics governing some of the new photovoltaic nanostructures being pursued, as well as the the current methods being employed to produce III-V, II-VI, and even chalcopyrite-based nanomaterials and nanostructures for solar cells.

Raffaelle, Ryne P.↗

NASA NTRS1995

High Performance Parallel Computational Nanotechnology

At a recent press conference, NASA Administrator Dan Goldin encouraged NASA Ames Research Center to take a lead role in promoting research and development of advanced, high-performance computer technology, including nanotechnology. Manufacturers of leading-edge microprocessors currently perform large-scale simulations in the design and verification of semiconductor devices and microprocessors. Recently, the need for this intensive simulation and modeling analysis has greatly increased, due in part to the ever-increasing complexity of these devices, as well as the lessons of experiences such as the Pentium fiasco. Simulation, modeling, testing, and validation will be even more important for designing molecular computers because of the complex specification of millions of atoms, thousands of assembly steps, as well as the simulation and modeling needed to ensure reliable, robust and efficient fabrication of the molecular devices. The software for this capacity does not exist today, but it can be extrapolated from the software currently used in molecular modeling for other applications: semi-empirical methods, ab initio methods, self-consistent field methods, Hartree-Fock methods, molecular mechanics; and simulation methods for diamondoid structures. In as much as it seems clear that the application of such methods in nanotechnology will require powerful, highly powerful systems, this talk will discuss techniques and issues for performing these types of computations on parallel systems. We will describe system design issues (memory, I/O, mass storage, operating system requirements, special user interface issues, interconnects, bandwidths, and programming languages) involved in parallel methods for scalable classical, semiclassical, quantum, molecular mechanics, and continuum models; molecular nanotechnology computer-aided designs (NanoCAD) techniques; visualization using virtual reality techniques of structural models and assembly sequences; software required to control mini robotic manipulators for positional control; scalable numerical algorithms for reliability, verifications and testability. There appears no fundamental obstacle to simulating molecular compilers and molecular computers on high performance parallel computers, just as the Boeing 777 was simulated on a computer before manufacturing it.

Saini, Subhash↗

NASA NTRS2001

Carbon Nanotubes in Water: MD Simulations of Internal and External Flow, Self Organization

We have developed computational tools, based on particle codes, for molecular dynamics (MD) simulation of carbon nanotubes (CNT) in aqueous environments. The interaction of CNTs with water is envisioned as a prototype for the design of engineering nano-devices, such as artificial sterocillia and molecular biosensors. Large scale simulations involving thousands of water molecules are possible due to our efficient parallel MD code that takes long range electrostatic interactions into account. Since CNTs can be considered as rolled up sheets of graphite, we expect the CNT-water interaction to be similar to the interaction of graphite with water. However, there are fundamental differences between considering graphite and CNTs, since the curvature of CNTs affects their chemical activity and also since capillary effects play an important role for both dynamic and static behaviour of materials inside CNTs. In recent studies Gordillo and Marti described the hydrogen bond structure as well as time dependent properties of water confined in CNTs. We are presenting results from the development of force fields describing the interaction of CNTs and water based on ab-initio quantum mechanical calculations. Furthermore, our results include both water flows external to CNTs and the behaviour of water nanodroplets inside heated CNTs. In the first case (external flows) the hydrophobic behaviour of CNTs is quantified and we analyze structural properties of water in the vicinity of CNTs with diagnostics such as hydrogen bond distribution, water dipole orientation and radial distribution functions. The presence of water leads to attractive forces between CNTs as a result of their hydrophobicity. Through extensive simulations we quantify these attractive forces in terms of the number and separation of the CNT. Results of our simulations involving arrays of CNTs indicate that these exhibit a hydrophobic behaviour that leads to self-organising structures capable of trapping water clusters. In the second case (internal flows) we study the behaviour of water droplets confined inside CNTs. Constant temperature simulations allow us to capture structural properties such as the contact angles and density profiles of the equilibrated drops. By heating and subsequently cooling of the CNT, we are able to measure the evaporation and the condensation rate of the entrapped water.

Jaffe, Richard L.↗

NASA NTRS1999

A High-Pressure Gas-Scintillation-Proportional Counter for the Focus of a Hard-X-Ray Telescope

We are developing a high-pressure Gas Scintillation Proportional Counter (GSPC) for the focus of a balloon-borne hard-x-ray telescope. The device has a total active diameter of 50 mm, of which the central 20 mm only is used, and is filled with xenon + 4% helium at a total pressure of 10 6 Pa giving a quantum efficiency of greater than 85% up to 60 keV. The detector entrance is sealed with a beryllium window, 3-mm thick, which provides useful transmission down to 6 keV, way below the atmospheric cut-off at balloon float altitudes. Scintillation light exits the detector via a UV transmitting window in its base and is registered by a Hamamatsu position-sensitive crossed-grid-readout photomultiplier tube. Initial testing is underway, quantifying light yield and energy resolution. Following that, the spatial resolution and absolute efficiency will be calibrated. Simulations show that a spatial resolution of better than 0.5 mm FWHM should be achievable up to 60 keV, and this is well matched to the angular resolution and plate scale of the mirror system. The energy resolution will be around 5% at 22 keV. Full details of the instrument design and its performance will be presented. A first flight is scheduled for the Fall of 99, on a stratospheric balloon to be launched from Fort Sumner, New Mexico.

Austin, R. A.↗

NASA NTRS2011

Design and Development of 256x256 Linear Mode Low-Noise Avalanche Photodiode Arrays

A larger format photodiode array is always desirable for many LADAR imaging applications. However, as the array format increases, the laser power or the lens aperture has to increase to maintain the same flux per pixel thus increasing the size, weight and power of the imaging system. In order to avoid this negative impact, it is essential to improve the pixel sensitivity. The sensitivity of a short wavelength infrared linear-mode avalanche photodiode (APD) is a delicate balance of quantum efficiency, usable gain, excess noise factor, capacitance, and dark current of APD as well as the input equivalent noise of the amplifier. By using InA1As as a multiplication layer in an InP-based APD, the ionization coefficient ratio, k, is reduced from 0.40 (lnP) to 0.22, and the excess noise is reduced by about 50%. An additional improvement in excess noise of 25% was achieved by employing an impact-ionization-engineering structure with a k value of 0.15. Compared with the traditional InP structure, about 30% reduction in the noise-equivalent power with the following amplifier can be achieved. Spectrolab demonstrated 30-um mesa APD pixels with a dark current less than 10 nA and a capacitance of 60 fF at gain of 10. APD gain uninformity determines the usable gain of most pixels in an array, which is critical to focal plane array sensitivity. By fine tuning the material growth and device process, a break-down-voltage standard deviation of 0.1 V and gain of 30 on individual pixels were demonstrated in our 256x256 linear-mode APD arrays.

Yuan, Ping↗