Influence of radiative recombination on the minority-carrier transport in direct band-gap semiconductors
When a semiconductor sample is irradiated by means of an external source, emitting photons or electrons, excess carriers are produced which distribute themselves throughout the sample. One of the parameters which determine the distribution of the carriers is the surface recombination velocity. The present investigation is concerned with the recombination lifetime tau. The predominant mechanism for recombination in wide band-gap semiconductors is described by the Shockley-Read-Hall (SRH) theory. The transport equations are derived for free carriers and the radiation field. The considered theory is applied to a semiinfinite, one-dimensional semiconductor slab irradiated by light of a given frequency. Some numerical considerations based on n-type GaAs are presented. Attention is given to a determination of the radiation transmitted through the surface of the sample.