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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11

Synthesis of H2 in dirty ice mantles by fast ion energy loss: New experimental results increase the relevance of this mechanism

Recent experimental results support the importance of H2 production in molecular clouds by cosmic ray bombardment of the mantles of grains. The formation of molecules different from those originally present in the irradiated layer can be explained by the production of molecular fragments induced by the release of energy if the impinging fast particle. One way of considering the process is in terms of a transiently hot cylinder, initially about 50 A in diameter, that exists around the track of an individual fast ion. Since ice has a relatively low thermal conductivity, energy lost by the ion in the ice layers remains confined around the track for time long enough to be thermalized. The hot cylinder increases in diameter and decreases in temperature on a time scale of 10(exp -11) to 10(exp -10) sec. Molecular fragments that are formed in this high temperature region acquire enough mobility to recombine with different partners, forming new molecules. A Monte Carlo simulation of the interaction between cosmic rays and grain mantles, at various depths in the core of a spherical molecular cloud, was performed. The simulation was continued until 40,000 ions had hit each grain of the type and size chosen. During the performed experiments thin icy films made of H2O and CD4 mixed in the gas phase and deposited on a cold finger at 9 K were irradiated with 1.5 MeV helium beams. Among synthesized molecules were found H2, HD, and D2.

Pirranello, Valero↗

Solar flare ionization in the mesosphere observed by coherent-scatter radar

The coherent-scatter technique, as used with the Urbana radar, is able to measure relative changes in electron density at one altitude during the progress of a solar flare when that altitude contains a statistically steady turbulent layer. This work describes the analysis of Urbana coherent-scatter data from the times of 13 solar flares in the period from 1978 to 1983. Previous methods of measuring electron density changes in the D-region are summarized. Models of X-ray spectra, photoionization rates, and ion-recombination reaction schemes are reviewed. The coherent-scatter technique is briefly described, and a model is developed which relates changes in scattered power to changes in electron density. An analysis technique is developed using X-ray flux data from geostationary satellites and coherent scatter data from the Urbana radar which empirically distinguishes between proposed D-region ion-chemical schemes, and estimates the nonflare ion-pair production rate.

Parker, J. W.↗

Vapor deposited emittance/catalysis coatings for superalloys in heatshield applications

Statically oxidized Inconel 617 and MA 956 superalloys were prepared with vapor deposited aluminosilicate layers and exposed to temperatures which simulated reentry conditions. The aluminosilicate layers were 1-2 microns thick. The trials consisted of exposures to 1500-2300 F heat while surface temperatures were monitored with pyrometers. Analyses were then performed of the catalytic activity, oxidation phenomena, and radiative properties after thermal cycling the specimens for 8 hr. Both alloys were found to be catalytic to the recombination processes of dissociated species in the reentry environment. The coatings reduced the catalytic activity by 40 percent for both alloys but did not change the emittance. An enhanced Cr depletion zone was detected in the Inconel samples, implying that the coating did not prevent diffusion loss of Cr. The coated MA 956, on the other hand, gained weight over the course of the trials.

Clark, R. K.↗

Measurement of minority carrier lifetimes and surface recombination velocities in solar cells

A generic comparison has been carried out of all methods for recombination parameter determination that are based on measurement of a current and/or voltage in either steady-state, transient, or frequency-dependent approaches. The theoretical background for the time-dependent methods has been extended from prior work to include drift fields and be applicable to compound (multilayered) regions. The key findings were: (1) all methods have essentially the same limitations to determination of only the dominant recombination parameters; (2) open-circuit measurements have more sensitivity to the recombination parameters than short circuit measurements, but they present much more difficulty in eliminating spurious effects; (3) transient and frequency-dependent methods have exactly the same expressions for the relaxation constants and the breakpoint frequencies; and (4) in compound regions there exists only one set of relaxation constants for all the coupled layers. These constants include all relevant parameters of these layers. It is thus difficult to separate these parameters in time- or frequency-domain measurements. ASLBIC seems still to be the most suitable method for determination of emitter parameters.

Wolf, M.↗

Comparison of nonequilibrium viscous-shock-layer solutions with windward surface Shuttle heating data

A three-dimensional viscous-shock-layer code has been modified and used to compute the nonequilibrium flowfield over the windward surface of the Space Shuttle Orbiter for reentry conditions between 75 and 60 km. Effects of the modifications are demonstrated by comparison of present heat-transfer predictions with earlier results. The present predictions show a roughly 30 percent decrease in heat transfer along the windward centerline in comparison with previous results and are in agreement with two-dimensional viscous-shock-layer results. The latter agreement indicates that three-dimensional effects are not as significant as previously reported. Windward symmetry plane and off-centerline heating predictions with the modified code are compared with flight data from STS-2 and STS-3. Windward-centerline heating predictions obtained with a recent expression for oxygen recombination at the Shuttle surface were found to be in generally good agreement with the flight data. Comparisons of heating predictions on the off-centerline windward surface were also in good agreement with the data, and the calculated results followed trends in the crossflow heating distributions.

Thompson, R. A.↗

Heavy doping effects in high efficiency silicon solar cells

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Lindholm, F. A.↗

Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Jenkins, Phillip P.↗

Advanced TUFROC Thermal Protection System

TUFROC is a cost-effective, state of the art, high temperature reusable thermal protection system that is flight-proven as the wing leading edge of X-37B. The low-density dual layer system takes advantage of the high temperature capability of a carbon composite at the surface and transitions to a low-conductivity silica-based Shuttle tile material in depth. An updated surface treatment formulation has resulted in a better performing system, called Advanced TUFROC, which demonstrates lower surface temperature due to reduced catalytic atom recombination at the surface, compared to the original system. An overview of TUFROC and recent arc jet testing will be presented.

TUFROC thermal protection system↗

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Macinnes, Andrew N.↗

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗

Space Shuttle heating analysis with variation in angle of attack and surface condition

The effects of variations in the angle of attack and surface catalycity condition on the Space Shuttle surface heating along the windward centerline are evaluated. Further, the time history of the nonequilibrium-to-equilibrium surface heating ratio and the boundary edge quantities are analyzed. Results show that a + or - 5% change in the angle of attack does not appreciably influence either the nonequilibrium heating or the nonequilibrium-to-equilibrium heat transfer ratio at higher (75 km) or lower (48 km) altitudes. The variation in the recombination rate parameter is found to affect the surface heating most at an altitude of about 75 km for the STS-2 flight. A maximum reduction of 49% in heating due to nonequilibrium chemistry is obtained at about a 75 km altitude in the nose region of the Orbiter for the STS-2 flight data. In addition, the nonequilibrium effects at the boundary layer edge are found to become less significant for altitudes less than 65 km even though the boundary layer flow may still be in nonquilibrium.

Gupta, R. N.↗

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗

Iodine Tagging Velocimetry and Mechanism in the Hypersonic Near Wake of a MultiPurpose Crew Vehicle

This study demonstrates a new molecular tagging velocimetry (MTV) method for velocity measurements of high speed flow. It demonstrates offbody Iodine Tagging Velocimetry (ITV) in the hypersonic near wake of a MultiPurpose Crew Vehicle (MPCV) model. Experiments are performed in the NASA-Langley 31-inch Mach 10 air wind tunnel. A 0.5% I2 / N2 mixture is seeded on the leeward backshell of the model using a pressure tap. I2 laser-induced fluorescence is excited along a 5.5 mm line using an ArF excimer laser near 193 nm. Results indicate I2 absorbs at least 2 photons to produce iodine ions and electrons. These recombine as the tagged region is displaced downstream to produce I (2P3/2) whose emission is monitored at 206 nm. Results at P0 = 2.41 MPa (350 psi), T0 = 990K, and 10 micro-sec transit times produce velocities from 630-820 m/sec across the I2 seeded jet at a distance of 38.2 mm (25.5 jet diameters) downstream from the jet orifice. Maximum wake jet velocities near the shear layer are 59% of freestream velocity.

Balla, R. Jeffrey↗

Fabrication and properties of gallium phosphide variable colour displays

The unique properties of single-junction gallium phosphide devices incorporating both red and green radiative recombination centers were investigated in application to the fabrication of monolithic 5 x 7 displays capable of displaying symbolic and alphanumeric information in a multicolor format. A number of potentially suitable material preparation techniques were evaluated in terms of both material properties and device performance. Optimum results were obtained for double liquid-phase-epitaxial process in which an open-tube dipping technique was used for n-layer growth and a sealed tipping procedure for subsequent p-layer growth. It was demonstrated that to prepare devices exhibiting a satisfactory range of dominant wavelengths which can be perceived as distinct emission colors extending from the red through green region of the visible spectrum involves a compromise between the material properties necessary for efficient red emission and those considered optimum for efficient green emission.

Effer, D.↗

Influence of ablation impurities on blunt body re-entry ionization

Electron density profiles which include the effect of an ablated sodium impurity were computed for the boundary layer on a blunt-nosed body re-entering the atmosphere at 7.62 km/sec. Profiles are computed from the nose to a distance of four diameters along the RAM C-payload. A finite-difference, laminar, nonequilibrium chemistry boundary-layer program was used. Comparison of theory with S-band diagnostic antenna results, electron concentration deduced from X- and C-band attenuation data, and Langmuir probe data at several different aft body locations show that agreement is good at high altitude. At the lower altitudes there is disagreement between theory and S-band antenna data where the apparent discrepancy is attributed to the three-body recombination rate constant used for deionization of sodium coupled with the effect of angle of attack.

Schexnayder, C. J., Jr.↗

The growth and characterization of Al(x)Ga(1-x)As/Ge heterostructures

The effects of the growth temperature and the Al(x)Ga(1-x)As layer thickness on the structural, optical, and electrical properties of Al(x)Ga(1-x)As/Ge heterostructures grown for photovoltaic applications were investigated using different-thickness (between 1 micron and 5 microns) Al(x)Ga(1-x)As layers grown by MOCVD in the temperature range between 660 and 780 C. Results obtained from double-crystal X-ray rocking curve measurements, electron beam induced current, cross-sectional TEM, Raman spectroscopy, SIMS, and steady-state and time-resolved photoluminescence measurements are presented. It was found that the highest minority carrier lifetime, 2.41 ns, was obtained for T(G) = 780 C, but the lowest interfacial recombination velocity, 1.6 x 10 exp 4, was obtained at 660 C.

Choi, S. W.↗

The solar cells and their mounting

Objectives in development of the solar plant for the Telstar spacecraft were to provide a power source which would withstand launching stresses and the expected space environment, with optimum end-of-life performance. Radiation damage to the silicon solar cells is the primary factor limiting their useful life; the effect of energetic protons or electrons is the generation of recombination centers in the silicon which reduce the minority-carrier diffusion length and therefore the long-wave response of the cell. The spacecraft solar cells use the n-on-p structure, in preference to conventional p-on-n structure, to obtain a factor of 3 to 10 increased life expectancy. Response to light in the 0.4 to 0.7 micron range is enhanced by using a thin n-layer (about 0.5 micron) and an antireflection coating with minimum reflectance at 0.55 micron wavelength. Early estimates of electron and proton fluxes in the satellite orbit showed that even the best cells would not give sufficient life without radiation shielding. Therefore the cells are protected against electrons of energy up to 1 Mev by 0.3 gm/sq. cm sapphire cover plates. The cell mountings are designed to withstand peak vibration stresses of 200 g and repeated temperature cycles from +65°C to −100°C. The 3600-cell solar power plant is composed of 300 twelve-cell groups of 1 cm × 2 cm cells, yielding a nominal initial power of 14 watts at 28 volts for any spin-axis orientation relative to the sun. Telemetry information on performance of the solar plant indicates degradation of the shielded solar cells equal to that measured in the laboratory on unshielded cells with a 1-Mev normal incidence flux of 6 × 10^(12) electrons/(sq. cm day). From this comparison it is estimated that the plant will degrade to 68 per cent of its initial output after two years in orbit.

SPACECRAFT POWER SUPPLY↗

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Fossum, J. G.↗