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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11

Equivalent crystal theory of alloys

Equivalent Crystal Theory (ECT) is a new, semi-empirical approach to calculating the energetics of a solid with defects. The theory has successfully reproduced surface energies in metals and semiconductors. The theory of binary alloys to date, both with first-principles and semi-empirical models, has not been very successful in predicting the energetics of alloys. This procedure is used to predict the heats of formation, cohesive energy, and lattice parameter of binary alloys of Cu, Ni, Al, Ag, Au, Pd, and Pt as functions of composition. The procedure accurately reproduces the heats of formation versus composition curves for a variety of binary alloys. The results are then compared with other approaches such as the embedded atom and lattice parameters of alloys from pure metal properties more accurately than Vegard's law is presented.

Bozzolo, Guillermo↗

Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

Evidence is presented for a four particle acceptor complex in 3C, 6H, and 4H SiC, obtained in low-temperature photoluminescence and cathodoluminescence experiments. The new lines were observed in p-type films lightly doped with aluminum, of 6H, 4H, and 3C SiC grown on the silicon (0001) face of 6H SiC under special conditions. The lines increase in intensity as more aluminum is added during growth. The multiplicity of observed lines is consistent with symmetry-based models similar to those which have been proposed to describe 4A centers in p-type zincblende semiconductors.

Clemen, L. L.↗

THz semiconductor-based front-end receiver technology for space applications

Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

Schottky diode multipliers↗

Numerical Modeling of Crystal of ZnSe by Physical Vapor Transport - Towards a more Comprehensive Formulations

Crystal growth from the vapor phase has various advantages over melt growth. The main advantage is from a lower processing temperature which makes the process more amenable in instances where the melting temperature of the crystal is high. Other benefits stem from the inherent purification mechanism in the process due to differences in the vapor pressures of the native elements and impurities, and the enhanced interfacial morphological stability during the growth process. Further, the implementation of PVT growth in closed ampoules affords experimental simplicity with minimal needs for complex process control which makes it an ideal candidate for space investigations in systems where gravity tends to have undesirable effects on the growth process. Bulk growth of wide band gap II-VI semiconductors by physical vapor transport has been developed and refined over the past several years at NASA MSFC. Results from a modeling study of PVT crystal growth of ZnSe are reported in this paper. The PVT process is numerically investigated using both two-dimensional and fully three-dimensional formulation of the governing equations and associated boundary conditions. Both the incompressible Boussinesq approximation and the compressible model are tested to determine the influence of gravity on the process and to discern the differences between the two approaches. The influence of a residual gas is included in the models. The results show that both the incompressible and compressible approximations provide comparable results and the presence of a residual gas tends to measurably reduce the mass flux in the system. Detailed flow, thermal and concentration profiles will be provided in the final manuscript along with computed heat and mass transfer rates. Comparisons with the 1-D model will also be provided. The effect of gravity on the process from numerical computations shows subtle effects although experimental evidence from vertically and horizontally grown samples show dramatic evidence of gravitational effects. The shortcomings of the problem formulation will be discussed and a framework will be provided leading up towards a more comprehensive model of PVT systems.

Ramachandran, N.↗

Modeling Directional Solidification

The objective of the research is to develop tools of use in explaining the results of directional solidification experiments in space. These tools consist of mathematical and experimental models. Experiments are also being flown at low-g to validate the ground-based results. Many metals and semiconductors directionally solidified in space had a diameter less than that of the containing ampoule. In fact this occurred whenever the ampoule contained a gas space. This phenomenon has been attributed in a vague way to lack of wetting of the ampoule wall by the melt. The actual liquid behavior by use of low temperature analogs is being observed aboard the KC-135. In the first flight, water was placed in plastic ampoules (not wet) with ceramic end plugs which were wet by the water to simulate a solid-liquid interface. Unfortunately during storage prior to the flight the water began to wet the ampoule wall. Discrete bubbles formed down the axis of the ampoules. New ampoule materials are being used now, with testing for stability prior to the next flight. A theoretical model has also been developed for this phenomenon.

Wilcox, W. R.↗

A two dimensional analysis of sheet resistance and contact resistance effects in solar cells

A computer model is developed to study the two-dimensional nature of the sheet resistance and contact resistance effects in solar cells. A major result is the demonstration that the distributed nature of the semiconductor sheet resistance causes the terminal dark I-V characteristics to exhibit an exp(qV/2kT) type dependence even when the one-dimensional characteristics of the cell exhibit an exp(qV/kT) type voltage dependence. The analytical model which is developed provides an easy method for estimating the sheet resistance of a solar cell from the terminal I-V data.

Fang, C. R.↗

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗

Crystal Growth by Physical Vapor Transport: Experiments and Simulation Dynamics

Crystal growth from the vapor phase has various advantages over melt growth. The main advantage is from a lower processing temperature, which makes the process more amenable in instances where the melting temperature of the crystal is high. Other benefits stem from the inherent purification mechanism in the process due to differences in the vapor pressures of the native elements and impurities, and the enhanced interfacial morphological stability during the growth process. Further, the implementation of PVT growth in closed ampoules affords experimental simplicity with minimal needs for complex process control, which makes it an ideal candidate for space investigations in systems where gravity tends to have undesirable effects on the growth process. Bulk growth of wide band gap II-VI semiconductors by PVT has been developed and refined over the past several years at NASA MSFC. A new modeling approach for PVT has also been recently formulated and its validation and testing is the main objective of this work.

Ramachandran, N.↗

Prognostics for Microgrid Components

Prognostics is the science of predicting future performance and potential failures based on targeted condition monitoring. Moving away from the traditional reliability centric view, prognostics aims at detecting and quantifying the time to impending failures. This advance warning provides the opportunity to take actions that can preserve uptime, reduce cost of damage, or extend the life of the component. The talk will focus on the concepts and basics of prognostics from the viewpoint of condition-based systems health management. Differences with other techniques used in systems health management and philosophies of prognostics used in other domains will be shown. Examples relevant to micro grid systems and subsystems will be used to illustrate various types of prediction scenarios and the resources it take to set up a desired prognostic system. Specifically, the implementation results for power storage and power semiconductor components will demonstrate specific solution approaches of prognostics. The role of constituent elements of prognostics, such as model, prediction algorithms, failure threshold, run-to-failure data, requirements and specifications, and post-prognostic reasoning will be explained. A discussion on performance evaluation and performance metrics will conclude the technical discussion followed by general comments on open research problems and challenges in prognostics.

Saxena, Abhinav↗

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to conduct the Earth-based research sufficient to successfully propose a flight experiment (1) to experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in conductive melts as this applies to the bulk growth of solid solution semiconducting materials in the reduced gravitational levels available in low Earth orbit and (2) to assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during space processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system was chosen because it has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit high growth rates compared to many other commonly studied alloy semiconductors. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. Some compositional anomalies observed by us in magnetic grown crystals can only be explained by TEMC; this has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface.

Szofran, Frank R.↗

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Neudeck, Philip G.↗

The Biolink Implantable Telemetry System

Most biotelemetry applications deal with the moderated data rates of biological signals. Few people have studied the problem of transcutaneous data transmission at the rates required by NASA's Life Sciences-Advanced BioTelemetry System (LS-ABTS). Implanted telemetry eliminate the problems associated with wire breaking the skin, and permits experiments with awake and unrestrained subjects. Our goal is to build a low-power 174-216MHz Radio Frequency (RF) transmitter suitable for short range biosensor and implantable use. The BioLink Implantable Telemetry System (BITS) is composed of three major units: an Analog Data Module (ADM), a Telemetry Transmitter Module (TTM), and a Command Receiver Module (CRM). BioLink incorporates novel low-power techniques to implement a monolithic digital RF transmitter operating at 100kbps, using quadrature phase shift keying (QPSK) modulation in the 174-216MHz ISM band. As the ADM will be specific for each application, we focused on solving the problems associated with a monolithic implementation of the TTM and CRM, and this is the emphasis of this report. A system architecture based on a Frequency-Locked Loop (FLL) Frequency Synthesizer is presented, and a novel differential frequency that eliminates the need for a frequency divider is also shown. A self sizing phase modulation scheme suitable for low power implementation was also developed. A full system-level simulation of the FLL was performed and loop filter parameters were determined. The implantable antenna has been designed, simulated and constructed. An implant package compatible with the ABTS requirements is also being proposed. Extensive work performed at 200MHz in 0.5um complementary metal oxide semiconductors (CMOS) showed the feasibility of integrating the RF transmitter circuits in a single chip. The Hajimiri phase noise model was used to optimize the Voltage Controlled Oscillator (VCO) for minimum power consumption. Two test chips were fabricated in a 0.5pm, 3V CMOS process. Measured phase noise for a 1.5mW, 200MHz ring oscillator VCO is -80dBc/Hz at 100KHZ offset, showing good agreement with the theory. We also propose a novel superregenerative receiver architecture for implementing the command receiver. The superregenerative receiver's simplicity, low cost, and low power consumption has made it the receiver of choice for short-distance data communications, remote control and home automation. We present the design of a superregenerative AM receiver implemented in a 0.5um CMOS technology that operates at 433.92MHz and dissipates only 300uW. Further work entails detailed transistor-level design of the FLL and superregenerative receiver and a monolithic implementation of an implantable transceiver in 0.5um CMOS technology.

Betancourt-Zamora, Rafael J.↗

Fast chemistry in ion wakes

A common aspect of the models of such processes as track formation and induced desorption of molecular ions is the requirement that the electronic excitation have a sufficiently long lifetime (of the order of picoseconds) so that energy can be transferred to atomic motion. Attention is called to several phenomena recently observed indicating that atomic motion/chemical rearrangement can occur even when the electronic excitation is shorter lived (of the order of femtoseconds). Two such processes, which are also induced by MeV ion bombardment, are track damage in heavily doped compound semiconductors and greatly enhanced adhesion of metal films to metallic and semiconducting substrates. Since neither of these effects can easily be accommodated within the existing theoretical models, it is thought possible that an even richer variety of ion-induced effects will be discovered.

Tombrello, T. A.↗

Long life assurance study for manned spacecraft long life hardware. Volume 5: Long life assurance test and study recommendations

A study was conducted to establish the guidelines to be applied to the selection of equipment for manned spacecraft systems. Recommendations for expansion of the original study are submitted. The subjects considered are: (1) designing to severe dynamic requirements; (2) analysis of in-space failures due to life limitations; (3) accelerated testing of semiconductors; (4) fan life verification; (5) testing of solid tantalum capacitors; (6) testing of teflon valve seats; and (7) electromigration model verification.

Source record↗

The surface tension of liquid gallium

The surface tension of liquid gallium has been measured using the sessile drop technique in an Auger spectrometer. The experimental method is described. The surface tension in mJ/sq m is found to decrease linearly with increasing temperature and may be represented as 708-0.66(T-29.8), where T is the temperature in centigrade. This result is of interest because gallium has been suggested as a model fluid for Marangoni flow experiments. In addition, the surface tension is of technological significance in the processing of compound semiconductors involving gallium.

Hardy, S. C.↗

Design of power electronics for TVC EMA systems

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

Nelms, R. Mark↗

Theoretical Study of Response of InGaAs Metal-Semiconductor-Metal Photodetectors

We present a theoretical investigation of the response of metal-semiconductor-metal (MSM) photodetectors made of InGaAs lattice-matched to InP using a two-dimensional drift-diffusion model with a thermionic-field emission boundary condition for the heterojunctions. The effect of including a top InAlAs layer to increase the effective barrier height of the metal fingers on the InGaAs active layer is thoroughly examined and found to limit the collection of the photocurrent signal due to the electron and hole barriers that it forms with InGaAs. Due to the thickness and height of the InAlAs barrier layer in existing designs, the tunneling current obtained from the model is found to be negligibly small to significantly affect the output signal current. In an attempt to obtain a better response, different design structures including one where a quasi-Schottky contact is utilized are studied and their speed of response, breakdown voltage, and dark current are compared to that of the usual InGaAs device.

Salem, Ali F.↗