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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Silicon Carbide Mounts for Fabry-Perot Interferometers

Etalon mounts for tunable Fabry- Perot interferometers can now be fabricated from reaction-bonded silicon carbide structural components. These mounts are rigid, lightweight, and thermally stable. The fabrication of these mounts involves the exploitation of post-casting capabilities that (1) enable creation of monolithic structures having reduced (in comparison with prior such structures) degrees of material inhomogeneity and (2) reduce the need for fastening hardware and accommodations. Such silicon carbide mounts could be used to make lightweight Fabry-Perot interferometers or could be modified for use as general lightweight optical mounts. Heretofore, tunable Fabry-Perot interferometer structures, including mounting hardware, have been made from the low-thermal-expansion material Invar (a nickel/iron alloy) in order to obtain the thermal stability required for spectroscopic applications for which such interferometers are typically designed. However, the high mass density of Invar structures is disadvantageous in applications in which there are requirements to minimize mass. Silicon carbide etalon mounts have been incorporated into a tunable Fabry-Perot interferometer of a prior design that originally called for Invar structural components. The strength, thermal stability, and survivability of the interferometer as thus modified are similar to those of the interferometer as originally designed, but the mass of the modified interferometer is significantly less than the mass of the original version.

Lindemann, Scott↗
NASA NTRS2012

Silicon Carbide Nanotube Oxidation at High Temperatures

Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

Ahlborg, Nadia↗
NASA NTRS2001

Silicon Carbide Solar Cells Investigated

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Bailey, Sheila G.↗
DOE OSTI2024

Multiscale Modeling of Silicon Carbide Cladding for Nuclear Applications: Thermal Performance Modeling

The complex multiscale and anisotropic nature of silicon carbide (SiC) ceramic matrix composite (CMC) makes it difficult to accurately model its performance in nuclear applications. The existing models for nuclear grade composite SiC do not account for the microstructural features and how these features can affect the thermal and structural behavior of the cladding and its anisotropic properties. In addition to the microstructural features, the properties of individual constituents of the composites and fiber tow architecture determine the bulk properties. Models for determining the relationship between the individual constituents’ properties and the bulk properties of SiC composites for nuclear applications are absent, although empirical relationships exist in the literature. Here, a hierarchical multiscale modeling approach was presented to address this challenge. This modular approach addressed this difficulty by dividing the various aspects of the composite material into separate models at different length scales, with the evaluated property from the lower-length-scale model serving as an input to the higher-length-scale model. The multiscale model considered the properties of various individual constituents of the composite material (fiber, matrix, and interphase), the porosity in the matrix, the fiber volume fraction, the composite architecture, the tow thickness, etc. By considering inhomogeneous and anisotropic contributions intrinsically, our bottom-up multiscale modeling strategy is naturally physics-informed, bridging constitutive law from micromechanics to meso-mechanics and structural mechanics. The effects that these various physical attributes and thermo-physical properties have on the composite’s bulk thermal properties were easily evaluated and demonstrated through the various analyses presented herein. Since silicon carbide fiber-reinforced SiC CMCs are also promising thermal–structural materials with a broad range of high-end technology applications beyond nuclear applications, we envision that the multiscale modeling method we present here may prove helpful in future efforts to develop and construct reinforced CMCs and other advanced composite nuclear materials, such as MAX phase materials, that can service under harsh environments of ultrahigh temperatures, oxidation, corrosion, and/or irradiation.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS2009

The Active Oxidation of Silicon Carbide

The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive-to-active transitions by increasing and decreasing oxygen pressure, respectively. For pure silicon a dramatic difference was found; whereas for SiC the difference was not as great. This may be due to the oxidation of the carbon in SiC which may break down the scale [3]. The third area is the effect of total pressure. In the literature, low oxygen potentials are achieved via either low total pressure or low oxygen pressure in an O2/Ar mixture. Both types of experiments are done in this study and the differences are discussed with regard to the presence or absence of a boundary layer.

Jacobson, Nathan S.↗
DOE OSTI2025

Laser-induced slip casting as an additive manufacturing approach for silicon carbide

Here, this work presents processing silicon carbide (SiC) with the laser-induced slip casting (LIS) additive manufacturing (AM). SiC was stabilized in water with polyethyleneimine (PEI) dispersant, and SiC slurries were made with rheology for LIS printing. High-density ceramic parts were printed, followed by single-step binder burnout and sintering. The printed parts achieved 93–95 % of theoretical density. X-ray computed tomography (XCT) revealed a small distribution of flaws exceeding 100 microns. The mechanical properties were measured in both parallel and perpendicular to the printing layers, and the orientation with layers perpendicular to the bending moment resulted in higher strength compared to the parallel direction. Porosity resulting from processing and large inclusions of boron carbide (B4C) were the root cause of failure in the measured samples. Despite these defects through this effort, this new approach demonstrates promise for green forming of SiC with densities greater than 95 % theoretical and tensile strengths above 250 MPa.

Additive Manufacturing↗
NASA NTRS1982

Net shape fabrication of Alpha Silicon Carbide turbine components

Development of Alpha Silicon Carbide components by net shape fabrication techniques has continued in conjunction with several turbine engine programs. Progress in injection molding of simple parts has been extended to much larger components. Turbine rotors fabricated by a one piece molding have been successfully spin tested above design speeds. Static components weighing up to 4.5 kg and 33 cc in diameter have also been produced using this technique. Use of sintering fixtures significantly improves dimensional control. A new Si-SiC composite material has also been developed with average strengths up to 1000 MPa (150 ksi) at 1200 C.

Storm, R. S.↗
DOE OSTI2022

Integrated silicon carbide diode rectifier circuits

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.

Barlow, Matthew↗
DOE OSTI2023

Multi-Scale Characterization of Porosity and Cracks in Silicon Carbide Cladding after Transient Reactor Test Facility Irradiation

Silicon carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuel (ATF) cladding for light water reactor applications. The morphology of fabrication defects, including the size and shape of voids, is one of the key challenges that impacts cladding performance and guarantees reactor safety. Therefore, quantification of defects’ size, location, distribution, and leak paths is critical to determining SiC CMC in-core performance. This research aims to provide quantitative insight into the defect’s distribution under multi-scale characterization at different length scales before and after different Transient Reactor Test Facility (TREAT) irradiation tests. A non-destructive multi-scale evaluation of irradiated SiC will help to assess critical microstructural defects from production and/or experimental testing to better understand and predict overall cladding performance. X-ray computed tomography (XCT), a non-destructive, data-rich characterization technique, is combined with lower length scale electronic microscopic characterization, which provides microscale morphology and structural characterization. This paper discusses a fully automatic workflow to detect and analyze SiC-SiC defects using image processing techniques on 3D X-ray images. Following the XCT data analysis, advanced characterizations from focused ion beam (FIB) and transmission electron microscopy (TEM) were conducted to verify the findings from the XCT data, especially quantitative results from local nano-scale TEM 3D tomography data, which were utilized to complement the 3D XCT results. In this work, three SiC samples (two irradiated and one unirradiated) provided by General Atomics are investigated. The irradiated samples were irradiated in a way that was expected to induce cracking, and indeed, the automated workflow developed in this work was able to successfully identify and characterize the defects formation in the irradiated samples while detecting no observed cracking in the unirradiated sample. These results demonstrate the value of automated XCT tools to better understand the damage and damage propagation in SiC-SiC structures for nuclear applications.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
NASA NTRS1991

Linear electro-optic effect in cubic silicon carbide

The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

Tang, Xiao↗
NASA NTRS2015

Single-Event Effects in Silicon Carbide Power Devices

This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

heavy-ion single-event effects↗
DOE OSTI2020

Evaluations of Silicon Carbide Temperature Monitors

The effect of irradiation on materials properties is an important field of study for materials usage in both fission and fusion systems for energy production. Neutron flux and energy spectrums are well understood; however, the irradiation temperature can be more difficult to determine. Since the early 1960s, Silicon Carbide (SiC) has been used as a passive post-irradiation temperature monitor because the irradiation defects anneal out above the irradiation temperature. Irradiation temperature is determined by measuring a property change after isochronal annealing or during a continuously monitored annealing process. There are many properties that may be measured including electrical resistivity, bulk density, dimensions, thermal diffusivity, or lattice spacing. Electrical resistivity is accepted as a robust measurement technique; however, such method is time-consuming since the steps involved must be performed in a serial manner. The use of thermal expansion from continuous dilatometry is an automated process requiring minimal setup time. As part of a Nuclear Science User Facilities (NSUF) project, low dose silicon carbide monitors were irradiated in the BR2 material test reactor at SCK, Belgium, and were then evaluated at the Idaho National Laboratory (INL) High Temperature Test Laboratory (HTTL) to determine their peak temperature achieved during irradiation. The technical significance of this work was that the monitors were irradiated to a dose that was significantly less than recommended in published literature. This paper will discuss the evaluation processes available at HTTL and the performance of the low dose silicon carbide temperature monitors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1979

Evaluation of silicon carbide fiber/titanium composites

Izod impact, tensile, and modulus of elasticity were determined for silicon carbide fiber/titanium composites to evaluate their potential usefulness as substitutes for titanium alloys or stainless steel in stiffness critical applications for aircraft turbine engines. Variations in processing conditions and matrix ductility were examined to produce composites having good impact strength in both the as-fabricated condition and after air exposure at elevated temperature. The impact strengths of composites containing 36 volume percent silicon carbide (SiC) fiber in an unalloyed (A-40) titanium matrix were found to be equal to unreinforced titanium-6 aluminum-4 vanadium alloy; the tensile strengths of the composites were marginally better than the unreinforced unalloyed (A-70) matrix at elevated temperature, though not at room temperature. At room temperature the modulus of elasticity of the composites was 48 percent higher than titanium or its alloys and 40 percent higher than that of stainless steel.

Jech, R. W.↗
NASA NTRS1990

Thermal expansion of laminated, woven, continuous ceramic fiber/chemical-vapor-infiltrated silicon carbide matrix composites

Thermal expansions of three two-dimensional laminate, continuous fiber/chemical-vapor-infiltrated silicon carbide matrix composites reinforced with either FP-Alumina (alumina), Nextel (mullite), or Nicalon (Si-C-O-N) fibers are reported. Experimental thermal expansion coefficients parallel to a primary fiber orientation were comparable to values calculated by the conventional rule-of-mixtures formula, except for the alumina fiber composite. Hysteresis effects were also observed during repeated thermal cycling of that composite. Those features were attributed to reoccurring fiber/matrix separation related to the micromechanical stresses generated during temperature changes and caused by the large thermal expansion mismatch between the alumina fibers and the silicon carbide matrix.

Eckel, Andrew J.↗
NASA NTRSDate not supplied

Evaluation of Silicon Carbide Pressure Sensor in Turbofan Engine Core Exhaust Nozzle

We report the results of the evaluation of single crystal 4H-silicon carbide piezoresistive pressure sensors that were directly inserted at the compressor and core exhaust nozzle exits, in shear contact with the engine-internal flow streams of the NASA DGEN Aeropropulsion Research Turbofan, where the operating temperatures at maximum power were ~230 oC, and ~460 oC, respectively. In addition to demonstrating sensor survivability during this maiden test, the frequency responses of the silicon-carbide sensors at the core-nozzle exit were compared against industry-standard silicon-based piezoresistive pressure transducers that externally placed, using an infinite-tube-probe arrangement. The low-voltage output of these early-development SiC sensors limited the frequency range with an acceptable signal-to-noise-ratio for the current application to less than about 2,500 Hz. The low output of the SiC sensors were due to a conservative burst-pressure diaphragm design that can be optimized to increase the frequency range. The results from this initial campaign offered insights to aspects of the sensor that would require further improvement, with the goal of achieving full-bandwidth capture of engine unsteady pressure fluctuations by direct interrogation of the flow field in hostile-environment engine-core components.

Silicon Carbide↗
NASA NTRS1987

Improved silicon carbide for advanced heat engines

This is the second annual technical report entitled, Improved Silicon Carbide for Advanced Heat Engines, and includes work performed during the period February 16, 1986 to February 15, 1987. The program is conducted for NASA under contract NAS3-24384. The objective is the development of high strength, high reliability silicon carbide parts with complex shapes suitable for use in advanced heat engines. The fabrication methods used are to be adaptable for mass production of such parts on an economically sound basis. Injection molding is the forming method selected. This objective is to be accomplished in a two-phase program: (1) to achieve a 20 percent improvement in strength and a 100 percent increase in Weibull modulus of the baseline material; and (2) to produce a complex shaped part, a gas turbine rotor, for example, with the improved mechanical properties attained in the first phase. Eight tasks are included in the first phase covering the characterization of the properties of a baseline material, the improvement of those properties and the fabrication of complex shaped parts. Activities during the first contract year concentrated on two of these areas: fabrication and characterization of the baseline material (Task 1) and improvement of material and processes (Task 7). Activities during the second contract year included an MOR bar matrix study to improve mechanical properties (Task 2), materials and process improvements (Task 7), and a Ford-funded task to mold a turbocharger rotor with an improved material (Task 8).

Whalen, Thomas J.↗
NASA NTRS2016

Body of Knowledge for Silicon Carbide Power Electronics

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Silicon Carbide Power Electronics↗