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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Characterization of silicon-carbon clusters by infrared laser spectroscopy: the nu 3(sigma u) band of linear Si2C3

The nu 3(sigma u) fundamental vibration of 1 sigma g+ Si2C3 has been observed using a laser vaporization-supersonic cluster beam-diode laser spectrometer. Forty rovibrational transitions were measured in the range of 1965.8 to 1970.9 cm-1 with a rotational temperature of 10-15 K. A least-squares fit of these transitions yielded the following molecular constants: nu 3(sigma u)=1968.188 31(18) cm-1, B"=0.031 575 1(60) cm-1, and B'=0.031 437 4(57) cm-1. These results are in excellent agreement with recent Fourier transform infrared (FTIR) measurements of Si2C3 trapped in a solid Ar matrix [J. Chem. Phys. 100, 181(1994)] and with ab initio calculations [J. Chem. Phys. 100, 175 (1994)] which suggest cumulenic-like bonding for Si2C3, analogous to the isovalent C5 carbon cluster.

Non-NASA Center↗
DOE OSTI2020

Electronic structure of the Si-containing topological Dirac semimetal CaAl 2 Si 2

There has been an upsurge in the discovery of topological quantum materials, where various topological insulators and semimetals have been theoretically predicted and experimentally observed. However, very few of them contain silicon, the most widely used element in the electronics industry. Recently, ternary compound CaA l 2 S i 2 has been predicted to be a topological Dirac semimetal, hosting Lorentz-symmetry-violating quasiparticles with a strongly tilted conical band dispersion. In this work, by using high-resolution angle-resolved photoemission spectroscopy, we investigated the comprehensive electronic structure of CaA l 2 S i 2 . A pair of topological Dirac crossings is observed along the k z direction, in good agreement with the ab initio calculations, confirming the topological Dirac semimetal nature of the compound. Our study expands the topological material family on Si-containing compounds, which have great application potential in realizing low-cost, nontoxic electronic devices with topological quantum states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Spectrometer-free quantitative vapor sensing and classification via spatiotemporal imaging of porous silicon metasurfaces

Metasurfaces offer a compact platform for optical vapor sensing, but their practical deployment has been limited by weak evanescent light–matter interactions and reliance on spectrally resolved instrumentation. Here, we report porous silicon (pSi) metasurfaces for spectrometer-free quantitative detection of volatile organic compounds (VOCs) with strongly enhanced light–matter interaction. The engineered porosity increases sensitivity by >100× relative to non-porous dielectric metasurfaces, enabling limits of detection of 1.65 ppm for methanol and 9.1 ppm for ethanol across a broad dynamic range (<10 ppm to >103 ppm). Imaging-based readout provides a lightweight, spectrometer-free pathway for real-time quantitative sensing. Beyond quantitative detection, the mesoporous architecture introduces adsorption–desorption kinetics as an additional information channel. Analysis of the resulting spatiotemporal signatures enables kinetic fingerprinting without reliance on infrared spectral features or surface functionalization, and a lightweight machine-learning classifier differentiates acetone, methanol, ethanol, and isopropanol with 91.6% accuracy. These results establish porous metasurfaces as spatiotemporal sensing elements that couple quantitative vapor detection with kinetic fingerprinting through real-time dynamical responses, enabling low-cost, high-performance optical sensors.

Dash, Tomoshree [Clemson University]↗
NASA NTRS1969

The Quantasyn, an improved quantum detector

Quantasyn provides absolute measurement of radiation flux in the range 1000 A to 4500 A and into the vacuum ultraviolet. This radiation detector cimbines the high quantum efficiency and inherent linearity of the silicon solar cell with the constant quantum response of the fluorescent organic compound liumogen.

Gorstein, M.↗
NASA NTRS1971

Materials investigation and tests for the development of space compatible electrical connectors

A molding study of compounds based on copolymers of highly fluorinated olefins and of flame retardant silicone is reported. Both single cavity and four cavity molds having size 22 and 24 holes with three webs in each hole were used. Also covered are dielectric strength, arc resistance, Bashore rebound, and maintenance aging tests on the various materials that have been successfully molded.

Pomeroy, C.↗
NASA NTRS1988

Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

Manasevit, H. M.↗
NASA NTRS1984

Method of forming a relatively stable slip of silicon metal particles and yttrium containing particles

The method concerns forming a relatively stable slip of silicon metal particles and yttrium containing particles. In one embodiment, a casting slip of silicon metal particles is formed in water. Particles of a yttrium containing sintering aid are added to the casting slip. The yttrium containing sintering aid is a compound which has at least some solubility in water to form Y.sup.+3 ions which have a high potential for totally flocculating the silicon metal particles into a semiporous solid. A small amount of a fluoride salt is added to the casting slip which contains the yttrium containing sintering aid. The fluoride salt is one which will produce fluoride anions when dissolved in water. The small amount of the fluoride anions produced are effective to suppress the flocculation of the silicon metal particles by the Y.sup.+3 ions so that all particles remain in suspension in the casting slip and the casting slip has both an increased shelf life and can be used to cast articles having a relatively thick cross-section. The pH of the casting slip is maintained in a range from 7.5 to 9. Preferably, the fluoride salt used is one which is based on a monovalent cation such as sodium or ammonia. The steps of adding the yttrium containing sintering aid and the fluoride salt may be interchanged if desired, and the salt may be added to a solution containing the sintering aid prior to addition of the silicon metal particles.

Dickie, Ray A.↗
NASA NTRS1974

Improved toughness of refractory compounds

The concept of grain-boundary-engineering through elimination of the grain-boundary silicate phase in silicon nitride was developed. The process involved removal of the silica from the nitride powder via a thermal treatment coupled with the use of nitride additives to compensate the remaining oxygen. Magnesium and aluminum nitrides are found to be the most effective additive for use as oxygen compensators. Strength decreases at elevated temperatures are not observed in the alumina containing material. The creep rate of a dual additive sialon composition was two orders of magnitude lower at 1400 C than commercial silicon nitride. A cursory analysis of the creep mechanism indicate that grain-boundary sliding is avoided through elimination of the grain-boundary silicate phase.

Wright, T. R.↗
NASA NTRS1987

Rapid thermal annealing of indium phosphide compound semiconductors

The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

Biedenbender, Michael D.↗
DOE OSTI2021

Cation Dynamics in Hybrid Halide Perovskites

Hybrid halide perovskite semiconductors exhibit complex, dynamical disorder while also harboring properties ideal for optoelectronic applications that include photovoltaics. However, these materials are structurally and compositionally distinct from traditional compound semiconductors composed of tetrahedrally coordinated elements with an average valence electron count of silicon. The additional dynamic degrees of freedom of hybrid halide perovskites underlie many of their potentially transformative physical properties. Neutron scattering and spectroscopy studies of the atomic dynamics of these materials have yielded significant insights into their functional properties. Specifically, inelastic neutron scattering has been used to elucidate the phonon band structure, and quasi-elastic neutron scattering has revealed the nature of the uncorrelated dynamics pertaining to molecular reorientations. Understanding the dynamics of these complex semiconductors has elucidated the temperature-dependent phase stability and origins of defect-tolerant electronic transport from the highly polarizable dielectric response. Furthermore, the dynamic degrees of freedom of the hybrid perovskites provide additional opportunities for application engineering and innovation.

Materials Science↗
NASA NTRS1977

Baseline tests of the AM General DJ-5E electruck electric delivery van

An electric quarter ton truck designed for use as a postal delivery vehicle was tested to characterize the state of the art of electric vehicles. Vehicle performance test results are presented. It is powered by a single-module, 54 volt industrial battery through a silicon controlled rectifier continuously adjustable controller with regenerative braking applied to a direct current compound wound motor.

Dustin, M. O.↗
NASA NTRS1986

Oscillations of a viscous compound drop

The effect of viscosity on normal mode oscillations of a compound drop is determined for a range of values of the viscosity, and the effect of a host medium is considered. The general form of the dispersion relation is derived, and numerical values are obtained for the case of an annular liquid region composed of silicon oil and with the core and host regions taken to be air. Results indicate that the sloshing mode of the compound drop is more damped than the bubble mode.

Lyell, M. J.↗
NASA NTRS1975

Photovoltaic applications of Compound Parabolic Concentrator (CPC)

The use of a compound parabolic concentrator as field collector, in conjunction with a primary focusing concentrator for photovoltaic applications is studied. The primary focusing concentrator can be a parabolic reflector, an array of Fresnel mirrors, a Fresnel lens or some other lens. Silicon solar cell grid structures are proposed that increase efficiency with concentration up to 10 suns. A ray tracing program has been developed to determine energy distribution at the exit of a compound parabolic concentrator. Projected total cost of a CPC/solar cell system will be between 4 and 5 times lower than for flat plate silicon cell arrays.

Winston, R.↗
NASA NTRS1977

Investigation of the composition of the Luna 16 lunar sample

The concentrations of aluminum, manganese, sodium, chromium, iron, cobalt, and 12 rare earth elements were determined by neutron activation analysis using slow neutrons. Oxygen and silicon were determined using a fast neutron generator. Mossbauer spectroscopy was used to investigate iron compounds in Luna 16 regolith samples from the upper part of the core.

Bakos, L.↗
NASA NTRS1980

The GaAs solar cell research and development programs of the Air Force

The compound GaAs is of interest for space application photovoltaics due to its inherent advantages over silicon. Higher efficiencies, superior radiation hardness, and a greater temperature resistance are the major advantages of GaAs over Si. Air Force programs look for ways of maximizing these advantages while minimizing disadvantages such as higher costs and weights. Four programs in GaAs photovoltaics are described and each program is discussed in terms of its objective, approach and status.

Masloski, K. T.↗
NASA NTRS1993

Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs polycrystals in a crucible are doubly sealed in two quartz tubes for safety. The GHF consists of two zones, namely, high temperature and low temperature zones, which results in a large temperature gradient at the interface. Crystal growth is performed by moving the furnace (i.e. the temperature profile) from the left to right at a definite rate. Thus, we will grow crystals both on Earth and in space under the same conditions. As previously described, it is possible to obtain good quality crystals which are homogeneous in composition both macroscopically and microscopically due to the lack of convection in space. We are planning to study the effects of convection on crystal growth from a melt by comparing and characterizing the properties of crystals grown on Earth with those grown in space.

Tatsumi, Masami↗
NASA NTRS2003

Magnetic Analysis Techniques Applied to Desert Varnish

Desert varnish is a black or reddish coating commonly found on rock samples from arid regions. Typically, the coating is very thin, less than half a millimeter thick. Previous research has shown that the primary components of desert varnish are silicon oxide clay minerals (~60%), manganese and iron oxides (~20-30%), and trace amounts of other compounds [1]. Desert varnish is thought to originate when windborne particles containing iron and manganese oxides are deposited onto rock surfaces where manganese oxidizing bacteria concentrate the manganese and form the varnish [4,5]. If desert varnish is indeed biogenic, then the presence of desert varnish on rock surfaces could serve as a biomarker, indicating the presence of microorganisms. This idea has considerable appeal, especially for Martian exploration [6]. Magnetic analysis techniques have not been extensively applied to desert varnish. The only previous magnetic study reported that based on room temperature demagnetization experiments, there were noticeable differences in magnetic properties between a sample of desert varnish and the substrate sandstone [7]. Based upon the results of the demagnetization experiments, the authors concluded that the primary magnetic component of desert varnish was either magnetite (Fe3O4) or maghemite ( Fe2O3).

Schmidgall, E. R.↗
NASA NTRS1987

Boron nitride: Composition, optical properties and mechanical behavior

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Pouch, John J.↗