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At least 199 records · Page 11

Structural Analysis of a Magnetically Actuated Silicon Nitride Micro-Shutter for Space Applications

Finite element models have been created to simulate the electrostatic and electromagnetic actuation of a 0.5gm silicon nitride micro-shutter for use in a spacebased Multi-object Spectrometer (MOS). The micro-shutter uses a torsion hinge to go from the closed, 0 degree, position, to the open, 90 degree position. Stresses in the torsion hinge are determined with a large deformation nonlinear finite element model. The simulation results are compared to experimental measurements of fabricated micro-shutter devices.

Loughlin, James P.↗

Strength evaluation test of pressureless-sintered silicon nitride at room temperature

In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

Matsusue, K.↗

Effect of loading rate on dynamic fracture of reaction bonded silicon nitride

Wedge-loaded, modified tapered double cantilever beam (WL-MTDCB) specimens under impact loading were used to determine the room temperature dynamic fracture response of reaction bonded silicon nitride (RBSN). The crack extension history, with the exception of the terminal phase, was similar to that obtained under static loading. Like its static counterpart, a distinct crack acceleration phase, which was not observed in dynamic fracture of steel and brittle polymers, was noted. Unlike its static counterpart, the crack continued to propagate at nearly its terminal velocity under a low dynamic stress intensity factor during the terminal phase of crack propagation. These and previously obtained results for glass and RBSN show that dynamic crack arrest under a positive dynamic stress intensity factor is unlikely in static and impact loaded structural ceramics.

Liaw, B. M.↗

Extreme value statistics analysis of fracture strengths of a sintered silicon nitride failing from pores

Statistical analysis and correlation between pore-size distribution and fracture strength distribution using the theory of extreme-value statistics is presented for a sintered silicon nitride. The pore-size distribution on a polished surface of this material was characterized, using an automatic optical image analyzer. The distribution measured on the two-dimensional plane surface was transformed to a population (volume) distribution, using the Schwartz-Saltykov diameter method. The population pore-size distribution and the distribution of the pore size at the fracture origin were correllated by extreme-value statistics. Fracture strength distribution was then predicted from the extreme-value pore-size distribution, usin a linear elastic fracture mechanics model of annular crack around pore and the fracture toughness of the ceramic. The predicted strength distribution was in good agreement with strength measurements in bending. In particular, the extreme-value statistics analysis explained the nonlinear trend in the linearized Weibull plot of measured strengths without postulating a lower-bound strength.

Chao, Luen-Yuan↗

Absorption and scattering limits of silicon nitride integrated photonics in the visible spectrum

Visible-light photonic integrated circuits (PICs) promise scalability for technologies such as quantum information, biosensing, and scanning displays, yet extending large-scale silicon photonics to shorter wavelengths has been challenging due to the higher losses. Silicon nitride (SiN) has stood out as the leading platform for visible photonics, but the propagation losses strongly depend on the film’s deposition and fabrication processes. Current loss measurement techniques cannot accurately distinguish between absorption and surface scattering, making it difficult to identify the dominant loss source and reach the platform’s fundamental limit. Here we demonstrate an ultra-low loss, high-confinement SiN platform that approaches the limits of absorption and scattering across the visible spectrum. Leveraging the sensitivity of microresonators to loss, we probe and discriminate each loss contribution with unparalleled sensitivity, and derive their fundamental limits and scaling laws as a function of wavelength, film properties and waveguide parameters. Through the design of the waveguide cross-section, we show how to approach the absorption limit of the platform, and demonstrate the lowest propagation losses in high-confinement SiN to date across the visible spectrum. We envision that our techniques for loss characterization and minimization will contribute to the development of large-scale, dense PICs that redefine the loss limits of integrated platforms across the electromagnetic spectrum.

Corato-Zanarella, Mateus (ORCID:0000000327318046)↗

Phase-shifted Bragg gratings in a foundry silicon nitride platform

Bragg gratings are key optical elements for applications in communications, sensing, and lasers. Phase-shifted Bragg gratings are a special case where the simple periodic structure is altered to allow a narrow spectral passband within the optical bandgap. Here, we demonstrate phase-shifted silicon nitride gratings fabricated using 193 nm deep ultraviolet lithography (DUV) on the AIM Photonics 300 mm silicon photonics foundry line. We measure the grating properties and verify the results with a transfer-matrix method (TMM) model. The standard grating expressions for extracting the coupling coefficient κ and bandwidth do not apply and are updated to account for the phase shift. These results inform future designs for on-chip grating filters and distributed feedback (DFB) lasers.

Husko, Chad (ORCID:0000000271252518)↗

Piezoelectrically actuated silicon-nitride-based high-speed spatial light modulator

Advancements in light modulator technology have been driving discoveries and progress across various fields. The problem of large-scale coherent optical control of atomic quantum systems—including cold atoms, ions, and solid-state color centers—presents among the most stringent requirements. This motivates a new generation of high-speed large-scale modulator technology operating in the visible to near-infrared wavelength range. We introduce a scalable modulator technology based on piezoelectrically actuated silicon nitride resonant waveguide gratings fabricated on 200 mm diameter silicon wafers with CMOS-compatible processes. We present a proof-of-concept device with 4 × 4 individually addressable 50 μ m × 50 μ m pixels or channels, each containing a resonant waveguide grating with a ~ 780 nm design wavelength, supporting > 100 MHz modulation speeds, and a spectral response with > 20 dB extinction.

integrated optics↗

Ellipsometric study of silicon nitride on gallium arsenide

A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

Alterovitz, S. A.↗

Ammonia formation caused by the presence of water in the wet grinding of silicon nitride powder

Si3 N4 powder (amorphous, alpha-, and beta-Si3 N4) was mixed with MeOH containing 8.87 mol. % H2O and ground. The NH3 generation rapidly increased after a grinding time of 100 hours. Silicon nitride sintered material was chosen as one of the high temperature, high strength structural materials and studies of the control of the raw material powder, preparation of the sintered body (finding the right assistant, hot press, high pressure sintering, fracture toughness and oxidation at high temperature were performed.

Kanno, Y.↗

Improved "Green" Forming Of Silicon Nitride

Advanced processing techniques reduce incidence of critical flaws. Critical flaws reduced by processing of powders to avoid organic and metallic contamination and combination of colloidal techniques with innovative slurry-pressing technique avoiding agglomeration. Silicon nitride considered for many applications ranging from components of turbine engines to industrial heat exchangers.

Freedman, Marc R.↗

Ultimate Suppression of Thermal Transport in Amorphous Silicon Nitride by Phononic Nanostructure.

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusIons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Tambo, Naoki↗

Mid-infrared frequency doubling using strip-loaded silicon nitride on epitaxial barium titanate thin film waveguides

Broadband mid-infrared (mid-IR) frequency doubling was demonstrated using nonlinear barium titanate (BTO) thin films. The device has a strip-loaded waveguide structure consisting of top silicon nitride (SiN) strips and an underneath BTO guiding layer. The epitaxial BTO was deposited on a strontium titanate (STO) substrate by pulsed-laser deposition. Through a SiN grating coupler, the pumping mid-IR light at wavelength &#x03BB;<!-- λ --> = 3.30 &#x2212;<!-- - --> 3.45 &#x00B5;<!-- µ --> m was coupled into the nonlinear BTO layer, where the spectrum of the near-infrared (NIR) second-harmonic generation was characterized. The developed BTO waveguides provide a platform for mid-IR nonlinear integrated photonics and on-chip quantum optics.

42 ENGINEERING↗

Influence of Cooling Hole Geometry and Material Conductivity on the Thermal Response of Cooled Silicon Nitride Plate

To complement the effectiveness of ceramic materials and the applicability to turbine engine applications, a parametric study using the finite element method was carried out. This study conducted thorough analyses of a thermal-barrier-coated silicon nitride (Si3N4) plate specimen with cooling channels, where its thermal conductivity was verified in an attempt to minimize the thermal stresses and reach an optimal rate of stress. The thermal stress profile was generated for specimens with circular and square cooling channels. Lower stresses were reported for a higher magnitude of thermal conductivity and in particular for the circular cooling channel arrangement. Contour plots for the stresses and the temperature are presented and discussed.

Abdul-Aziz, Ali↗

Silicon Nitride Balls For Cryogenic Bearings

Resistance to wear greater than that of 440C steel. Experiments show lives of ball bearings immersed in liquid nitrogen or liquid oxygen increased significantly when 440C steel balls (running on 440C steel races) replaced by balls of silicon nitride. Developed for use at high temperatures, where lubrication poor or nonexistent. Best wear life of any bearing tested to date and ball material spalls without fracturing. Plans for future tests call for use of liquid oxygen as working fluid.

Butner, Myles F.↗

Telecom-to-visible quantum frequency converter on a silicon nitride chip

Quantum frequency conversion serves a key role in the realization of hybrid quantum networks by interfacing between wavelength-incompatible platforms. Here we present what is believed to be the first quantum frequency converter connecting visible and telecom domains on a silicon nitride (SiN) chip, using Bragg-scattering four-wave mixing to upconvert heralded single photons from 1260 to 698 nm, which covers a 192 THz span. We examine the noise sources in SiN and devise approaches to suppress noise photons at the source and target frequencies to enable measurements at the single-photon level. We demonstrate an on-chip conversion efficiency of 5% in photon flux and describe design modifications that can be implemented to significantly improve it. Our results pave the way for the implementation of complementary metal-oxide-semiconductor (CMOS)-compatible devices in quantum networks.

59 BASIC BIOLOGICAL SCIENCES↗

Properties of silicon carbide fiber-reinforced silicon nitride matrix composites

The mechanical properties of NASA Lewis developed SiC/RBSN composites and their thermal and environmental stability havd been studied. The composites consist of nearly 30 vol pct of aligned 142 micron diameter chemically vapor-deposited SiC fibers in a relatively porous silicon nitride matrix. In the as-fabricated condition, the unidirectional and 2-D composites exhibited metal-like stress-strain behavior, graceful failure, and showed improved properties when compared with unreinforced matrix of comparable density. Furthermore, the measured room temperature tensile properties were relativley independent of tested volume and were unaffected by artifical notches normal to the loading direction or by thermal shocking from temperatures up to 800 C. The four-point bend strength data measured as a function of temperature to 1400 C in air showed that as-fabricated strength was maintained to 1200 C. At 1400 C, however, nearly 15 pct loss in strength was observed. Measurement of room temperature tensile strength after 100 hr exposure at temperatures to 1400 C in a nitrogen environment indicated no loss from the as-fabricated composite strength. On the other hand, after 100 hr exposure in flowing oxygen at 1200 and 1400 C, the composites showed approximately 40 pct loss from their as-fabricated ultimate tensile strength. Those exposed between 400 to 1200 C showed nearly 60 pct strength loss. Oxidation of the fiber/matrix interface as well as internal oxidation of the porous Si3N4 matrix are likely mechanisms for strength degradation. The excellent strength reproducibility, notch insensitivity, and high temperature strength of the composite makes it an ideal candidate for advanced heat engine applications provided coating or densification methods are developed to avoid internal oxidation attack.

Bhatt, Ramakrishna T.↗

Improved fabrication of scalable hybrid silicon nitride–thin-film lithium niobate electro-optic modulators

Strategies for improved fabrication of integrated thin-film lithium niobate electro-optic (EO) Mach–Zehnder modulators (MZMs) are reported using scalable processes and designs. The MZM devices utilize direct bonding of unetched and unpatterned thin-film lithium niobate to patterned and planarized silicon photonic microchips. The latter contains silicon nitride waveguide structures of various widths that are used to form hybrid modes that are suitable for high-bandwidth low-voltage EO modulators based on Pockels effect. We report that the incorporation of appropriately designed outgassing channels and certain modifications to key processing steps helped achieve a greater than 99% reduction in void density during bonding. Void reduction is critically important for these traveling-wave hybrid MZM devices in which the optical mode is controllably distributed between multiple thin layers and propagates over millimeter-scale lengths.

Mere, Viphretuo↗

10 Be at iThemba LABS using a silicon nitride membrane stack as absorber for isobar suppression

10 Be is an important isotope for accelerator mass spectrometry (AMS) because of the demand for cosmogenic radionuclide dating methods in the earth science and paleo-sciences community. At the iThemba Laboratory for Accelerator Based Science (iThemba LABS) we implemented full suppression of the interfering isobar 10 B using a silicon nitride foil-stack, utilizing the 2+ charge state for high efficiency. We demonstrate the performance of this newly established AMS system using standards and test samples. Here we further present the results of an inter-comparison between iThemba LABS and the Center for Accelerator Mass Spectrometry/Lawrence Livermore National Laboratory, on AMS samples prepared from purified quartz at the University of Vermont. The results for 10 Be from the laboratories are in close agreement, fully consistent with cross-calibration between them. AMS results for 26 Al are in similarly good agreement, demonstrating the performance and accuracy of iThemba LABS for the most commonly measured in situ produced cosmogenic nuclides.

10-Be↗