Heterojunction solar cell calculations
Solar cell efficiencies computed for semiconductor heterojunction cells
Milnes, A. G.↗
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Research for the improvement of silicon solar cell efficiency
Solar cell design curves for collection efficiency
Wolf, M.↗
Electron spectrum irradiations of silicon solar cells
Si solar cells electron spectrum irradiation, simulating space environment synchronous altitude trapped electrons omnidirectional and flux/energy characteristics
Anspaugh, B. E.↗
V-grooved silicon solar cells
Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces were made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80 percent of those collected in the valleys.
Baraona, C. R.↗
V-grooved silicon solar cells
Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces have been made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80% of those collected in the valleys.
Baraona, C. R.↗
Glass tubes for protecting solar cells
Protecting solar cells against environmental effects is accomplished by putting them inside glass tubes instead of hermetically sealing them between pairs of flat glass sheets. If cells are coupled with storage battery integrated into tube, freestanding power source could be built.
Shelpuk, B.↗
Back wall solar cell
A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.
Brandhorst, H. W., Jr.↗
Ultraviolet irradiation at elevated temperatures and thermal cycling in vacuum of FEP-A covered silicon solar cells
Silicon solar cells covered with FEP-A were irradiated in vacuum with ultraviolet light and then subjected to thermal cycling. These accelerated laboratory conditions are believed to be equivalent to those experienced by FEP-A covered cells on the ATS-6 spacecraft and the results indicate a probable mechanism for the faster degradation of the FEP-A covered cells. Heat-bonded FEP-A covers apparently embrittle when exposed to four months of space UV radiation at elevated temperatures, and crack when subjected to thermal cycling during the eclipse period. Low energy proton radiation can then penetrate to the junction of the cell causing degradation of the open circuit voltage and maximum power to occur. An alternate method of application of FEP-A, such as with adhesives, may prevent such cracking.
Broder, J. D.↗
Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells
Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).
Garlick, G. F. J.↗
18-percent efficient terrestrial silicon solar cells
Silicon solar cells are described which operate at energy conversion efficiencies in excess of 18 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are believed to be the most efficient silicon cells reported to date. The high efficiency is a result of the combination of high open-circuit voltage due to the careful attention paid to passivation of the top surface of the cell; high fill factors due to the high open-circuit voltage and low parasitic resistance losses; and high short-circuit current due to the use of shallow diffusions, a low grid coverage, and an optimized double-layer antireflection coating.
Blakers, A. W.↗
High-efficiency silicon solar cells
Silicon solar cells are described which operate at energy conversion efficiencies independently measured at 18.7 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are apparently the most efficient silicon cells fabricated to date. The high-efficiency results from a combination of high open-circuit voltage due to the careful attention paid to the passivation of the top surface of the cell, high fill factor due to the high open-circuit voltage and low parasitic resistance losses, and high short-circuit current density due to the use of shallow diffusions, a low grid coverage, and an optimized double layer antireflection coating.
Green, M. A.↗
Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells
AlGaAs/GaAs solar cells with about 0.5-micron-thick Al(0.85)Ga(0.15)As window layers were irradiated using isotropic and normal incidence protons having energies between 50 and 500 keV with fluences up to 1 x 10 to the 12th protons/sq cm. Although the projected range for these protons varies from 0 to more than 4.5 microns, the recombination losses due to the irradiation-induced defects were observed to be maximum in the vicinity of the AlGaAs/GaAs interface and the space-charge region irrespective of the proton energy. This was found by analyzing spectral response measurements. The results are explained by using a model in which the interaction of as-grown dislocations with irradiation-induced point defects is considered.
Kachare, R.↗
Direct-current magnetron fabrication of indium tin oxide/InP solar cells
Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.
Coutts, T. J.↗
Annealing results on low-energy proton-irradiated GaAs solar cells
AlGaAs/GaAs solar cells with an approximately 0.5-micron-thick Al(0.85)Ga(0.15)As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10 to the 12th protons/sq cm. The irradiated cells were annealed at temperatures between 150 and 300 C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.
Kachare, R.↗
Effects of proton irradiation on the performance of InP/GaAs solar cells
InP solar cells are known to be more radiation resistant than either GaAs or Si. In addition, AMO total area efficiencies approaching 19 percent were attained for InP. However, the present high substrate cost presents a barrier to the eventual widespread use of InP cells in space. In addition, if cell thinning becomes desirable, their relative fragility presents a problem. For these reasons, the NASA Lewis Research Center has initiated a program, aimed at producing thin InP cells, by heteroepitaxial deposition of InP on cheaper, more durable substrates. To date, a short term feasibility study as Spire has resulted in cells processed from InP heteroepitaxially deposited on Si substrates with an intervening thin GaAs layer (InP/GaAs/Si) and cells produced from InP deposited on GaAs (InP/GaAs). As a result of this short study efficiencies of over 7 and 9 percent were achieved for InP/GaAs/Si and InP/GaAs respectively. Although these efficiencies are low, they represent a modest and encouraging starting point for a more intensive program. Obviously, when considering economy and mechanical strength, cells processed on silicon substrates are preferred. However, although the InP/GaAs cells are not the final desirable products of this program, their properties serve to highlight several roadblocks to be overcome in producing cells with the more desirable cost and strength properties. Hence, in the present case, the properties of the InP/GaAs cells before and after irradiation by 10 MeV protons are examined. A similar study of InP/GaAs/Si cells will be reported on at a later date.
Weinberg, Irving↗
Grain boundary strain localization in a CdTe solar cell revealed by scanning 3D X-ray diffraction microscopy
Scanning 3DXRD was used to visualize strain localization at grain boundaries with a high spatial resolution of 100 nm.
Shukla, Aditya↗
Historical perspective of barriers to achieving high-efficiency silicon solar cells
Early silicon solar cells were made of metallurgical-grade silicon with very low efficiency. The single-crystal silicon introduced in the mid-50's increased the efficiency to the 5% to 10% region. Throughout the 1960s the technology of the 2 x 2 cm or 2 x 4 cm space solar cell with 10% efficiency was established. In the early 1970s work related to the violet cell upset the status quo and space solar cells and cells in general became more efficient. The rest of the decade became characterized by establishing a terrestrial photovoltaic technology to support the development of a new industry. Costs per watt became the dominant consideration and frequently the efficiency was compromised. The introduction of materials and other forms of silicon dropped the efficiency and it is now a state of mine that accomplishing 10% efficiency with some alternative combination is regarded as success. Silicon solar cells are capable of delivering efficiences much greater than 10%.
Lindmayer, J.↗
Carbazole-Based Hole Transport Polymer for Methylammonium-Free Tin-Lead Perovskite Solar Cells with Enhanced Efficiency and Stability
As the most commonly used hole transport material (HTM) in tin-lead (Sn-Pb) perovskite solar cells (PSCs), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) limits the power conversion efficiency (PCE) and stability of the PSCs due to its acidic characteristics. Herein, an easily synthesized polymer HTM poly[(phenyl)imino[9-(2-ethylhexyl)carbazole]-2,7-diyl] (CzAn) with a shallow highest occupied molecular orbital (HOMO) level of -4.95 eV is used in a p-i-n structure, methylammonium-free, Sn-Pb PSC to replace PEDOT:PSS. Upon optimization using doping and surface engineering, high quality Sn-Pb PSCs could be successfully fabricated, boosting the PCE to 22.6% (stabilized PCE of 21.3%) compared with 21.2% for PEDOT:PSS. The perovskite films prepared on the modified CzAn HTM possess improved crystallinity, reduced trap-state density, and larger carrier mobility resulting in PSCs with greatly improved stability.
carrier mobility↗