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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Calibration of a pressure switch is accurately checked by a thin-walled circular bladder. It is placed in the pressure switch and applies force to the switch diaphragm when expanded by an external pressure source. The disturbance to the normal operation of the switch is minimal.
Design of electric switch for providing intermittent contact is presented. Switch consists of flexible conductor surrounding, but separated from, fixed conductor. Flexing of outside conductor to contact fixed conductor completes circuit. Advantage is small size of switch compared to standard switches.
A mechanically operable solid state switch suited for use in achieving a variable circuit-switching function is described. This switch is characterized by an annular array of photoresponsive switching devices, disposed in communication with an included source of radiation, and a plurality of interchangeable, mechanically operable interrupter disks. Each disk has a predetermined pattern of transparent and opaque portions. Operative displacement of each disk serves to make and break selected electrical circuits through the photo responsive devices of said array.
Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.
Automatic switching of the shuttle orbiter S-band quad antennas by the orbiter on-board computers was evaluated. The development and use of an extensive computer program to determine antenna switch position states as a function of time for various orbital activities is described. The selection of the optimum quad antenna element at any given time is based on the look angle to the appropriate Tracking Data Relay Satellite (TDRS). It is shown that a 2.4 second period is required for updating the S-band quad antenna switch state based on a maximum roll rate of 2 deg per second. The possibility of a variable update period is suggested since the 2 deg per second attitude rate is seldom encountered and would, for example, dictate approximately 248,000 on-board computer calculations during Reference Mission 2. The average number of antenna switch state changes was found to be in the range of 1,300 for Reference Mission 2.
The design of a clamped-diaphragm pressure switch is described in which diaphragm motion is detected by a simple fiber-optic displacement sensor. The switch was evaluated in a pressure measurement system where it detected the zero crossing of the differential pressure between a static test pressure and a tank pressure that was periodically ramped from near zero to fullscale gage pressure. With a ramping frequency of 1 hertz and a full-scale tank pressure of 69 N/sq cm gage (100 psig), the switch delay was as long as 2 milliseconds. Pressure measurement accuracies were 0.25 to 0.75 percent of full scale. Factors affecting switch performance are also discussed.
A method for modeling switching-converter power stages is developed, whose starting point is the unified state-space representation of the switched networks and whose end result is either a complete state-space description or its equivalent small-signal low-frequency linear circuit model. A new canonical circuit model is proposed, whose fixed topology contains all the essential input-output and control properties of any dc-to-dc switching converter, regardless of its detailed configuration, and by which different converters can be characterized in the form of a table conveniently stored in a computer data bank to provide a useful tool for computer aided design and optimization. The new canonical circuit model predicts that, in general, switching action introduces both zeros and poles into the duty ratio to output transfer function in addition to those from the effective filter network.
Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.
Crimp-type connectors reduce assembly and disassembly time. With design, no switch preparation is necessary and socket contracts are crimped to wires inserted in module attached to back of toggle switch engaging pins inside module to make electrical connections. Wires are easily removed with standard detachment tool. Design can accommodate wires of any gage and as many terminals can be placed on switch as wire gage and switch dimensions will allow.
Adaptive active low-pass filters incorporate CMOS (Complimentary Metal-Oxide Semiconductor) analog switches (such as 4066 switch) that reduce variation in switch resistance when filter is switched to any selected transfer function.
Two automatic switches control heat flow from one thermally conductive plate to another. One switch permits heat flow to outside; other limits heat flow. In one switch, heat on conductive plate activates piston that forces saddle against plate. Heat carriers then conduct heat to second plate that radiates it away. After temperature is first plate drops, piston contracts and spring breaks thermal contact with plate. In second switch, action is reversed.
Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.
Requirements for microwave switching in space, based on a frequency translating satellite are discussed. A 100 x 100 switch with a bandwidth of 2.5 GHz is considered for the more than 70 U.S. metropolitan areas with populations over half of a million. Switch architectures are outlined and switching devices, logic requirements, and reliability are described.
Under the proper conditions, double-injection (DI) diodes with partially compensated deep impurities will exhibit 'S'-type switching characteristics similar to conventional silicon-controlled rectifiers (SCR's). A practical injection-gating scheme has been achieved for the first time in a planar configuration to control the switching behavior of these devices, marked by extreme sensitivity of the gate over a range of switching voltages. An experiment to demonstrate the feasibility of these devices for practical application is described. Finally, a phenomenological explanation is presented for the gate-controlled switching of these devices.
Practical version of parallel-access alinement network utilizes two barrel switches for interfacing N parallel memory modules with N parallel processing elements. Switches are interconnected where 17 memory ports (MP's) are connected to 17 processor ports (PP's). Network uses two electronic barrel switches to direct data flow in parallel data-processing system. Each switch can shift a multibit parallel input a predetermined number of places to left or right, end off, or end around in one clock-pulse.
Hybrid switch allows high-power direct current to be turned on and off without arcing or erosion. Switch consists of bank of transistors in parallel with mechanical contacts. Transistor bank makes and breaks switched circuit; contacts carry current only during steady-state "on" condition. Designed for Space Shuttle orbiter, hybrid switch can be used also in high-power control circuits in aircraft, electric autos, industrial furnaces, and solar-cell arrays.
A control system for a solid state crossbar switch which allows a plurality of switch control and interrogation functions to be implemented by time sharing related circuitry is described. The crossbar switch includes a plurality of X ports and Y ports, each X-Y port intersection designating a specific X-Y intersection latch which controls a plurality of associated switches for interconnecting one set of data lines associated with the X port to another set of data lines associated with the Y port. The control system continuously and sequentially addresses each of the X-Y intersection latches at a 10 megahertz rate. During this addressing, the control circuitry includes a capability for interrogating each intersection latch for determining which are in a set condition, ensuring that only one X-Y intersection latch is set on an X row and Y column defining that latch, resetting all of the X-Y intersection latches, and determining which of the X-Y intersection latches are in a set condition.
The paper describes the design of an SS-TDMA microwave switch matrix being developed as part of the NASA 30/20 GHz Communications Satellite Program. A critical element in the systems development is the high-speed wideband switching capability necessary for 30/20 GHz SS-TDMA trunking service interconnections. A proof-of-concept model of a 20-by-20 microwave switch matrix with a 2.5 GHz bandwidth and 10-nanosecond switching speeds is being developed to realize this capability.