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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗
DOE OSTI2022

Engineering Magnetic Anisotropy and Emergent Multidirectional Soft Ferromagnetism in Ultrathin Freestanding LaMnO 3 Films

We report the combination of small coercive fields and weak magnetic anisotropy makes soft ferromagnetic films extremely useful for nanoscale devices that need to easily switch spin directions. However, soft ferromagnets are relatively rare, particularly in ultrathin films with thicknesses of a few nanometers or less. We have synthesized large-area, high-quality, ultrathin freestanding LaMnO 3 films on Si and found unexpected soft ferromagnetism along both the in-plane and out-of-plane directions when the film thickness was reduced to 4 nm. We argue that the vanishing magnetic anisotropy between the two directions is a consequence of two coexisting magnetic easy axes in different atomic layers of the LaMnO 3 film. Spectroscopy measurements reveal a change in Mn valence from 3+ in the film interior to approximately 2+ at the surfaces where considerable hydrogen infiltration occurs due to the water dissolving process. First-principles calculations show that protonation of LaMnO 3 decreases valence and Our the Mn switches the magnetic easy axis from in-plane to out-of-plane as the Mn valence approaches 2+ from its 3+ bulk value. Our work demonstrates that ultrathin freestanding films can exhibit functional properties that are absent in homogeneous materials, concomitant with their convenient compatibility with Si-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Hardware intrusion detection system

An apparatus for intrusion detection includes processing circuitry, a switch, signal detection circuitry, and an analog-to-digital converter (“ADC”). The processing circuitry is coupled to send a challenge signal to a device when the device is coupled to the processing circuitry. The switch is coupled to be enabled and disabled by the processing circuitry. The switch is for coupling to the device to receive a response signal in response to the challenge signal sent by the processing circuitry. The signal detection circuitry is coupled to receive the response signal in via the switch, when the processing circuitry enables the switch. The ADC is coupled to take measurements of the signal detection circuitry at a first output. The processing circuitry is coupled to the ADC and configured to analyze whether an intruder is present in the device based on the measurements of the signal detection circuitry.

Edwards, Nathan J.↗
DOE OSTI2023

Programmable delay device enabling large delay in small package

A programmable delay device that provides delays of more than 100 ns over a broad bandwidth is disclosed. The device includes an input stage that employs M sampling switched capacitor elements such that each sampling switched capacitor element samples at a rate of only 1/M of the fundamental sampling rate. The device includes a programmable delay stage with M programmable switched capacitor banks, each programmable switched capacitor bank having N delay switched capacitor storage elements. Thus, the programmable delay stage includes a total of M×N delay switched capacitor storage elements, thereby reducing the sampling rate by a factor of M×N. This reduced sampling rate permits much smaller sampling switches, resulting in reduced leakage current and enabling far longer programmable delay times. Lastly, the device includes an output reconstruction stage that reconstructs a delayed version of the input RF signal by combining signals from the programmable delay stage.

Forbes, Travis↗
DOE OSTI2026

Surface-Functionalized, Two-Dimensional Polymer Electrochromic Layers as Ultrafast, Multi-State Infrared Optical Gates

Electrochromic devices have widespread application potential, but the currently available switching speeds limit broad real-world implementation of this technology. Here, we report surface-engineered two-dimensional polymers with ionophilic pores that offer unprecedented switching speeds in solid-state, two-terminal, electrochromic devices. In particular, we demonstrate that a crystalline donor–acceptor 2DP functionalized with ethylene glycol oligomers exhibits multistate infrared absorption that is 4× faster (t c = 320 ms) with 3× coloration efficiency (491 cm 2 C –1 ) compared to an alkyl functionalized 2DP constructed from the same chromophores. The functionalized nanoporous surfaces enable rapid switching in these materials under either oxidative or reductive conditions, allowing us to access a range of robust, stable optical responses in a single electrochromic layer. These attributes led us to leverage surface-functionalized 2DPs as multistate infrared logic gates. Collectively, this work demonstrates that surface engineering of nanoporous crystalline lattices is a promising approach to co-optimize the electronic and ionic conductivities required to achieve rapidly switchable electrochromic layers. Beyond speed and efficiency, the demonstration of multistate infrared characteristics shows that electrochromic frameworks are useful in integrated optoelectronic circuits. This positions surface-engineered 2DPs as improved electrochromic coatings and a new material platform for photonic information processing and adaptive devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Encoding multistate charge order and chirality in endotaxial heterostructures

Abstract High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1 T -TaS 2 due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS 2 devices. Here, we demonstrate the fabrication of nanothick verti-lateral H -TaS 2 /1 T -TaS 2 heterostructures in which the number of endotaxial metallic H -TaS 2 monolayers dictates the number of resistance transitions in 1 T -TaS 2 lamellae near room temperature. Further, we also observe optically active heterochirality in the CDW superlattice structure, which is modulated in concert with the resistivity steps, and we show how strain engineering can be used to nucleate these polytype conversions. This work positions the principle of endotaxial heterostructures as a promising conceptual framework for reliable, non-volatile, and multi-level switching of structure, chirality, and resistance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2023

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) is the first monolithic SiC bidirectional switch, which offers a lower voltage drop and semiconductor devices count alternative to the reverse-voltage-blocking (RB) switch used in the current-source converters (CSC). The bidirectional switch based CSC also allows DC-link current reversal for bidirectional power flow and provides multiple system-level benefits in a buck-boost AC/DC system consisting of buck-type DC/DC converter and CSC. This paper discusses the selection of buck converter duty cycle and CSC modulation index for the system’s buck-boost operation with a wide variation in DC voltage. CSC modulation schemes categorized based on the number of hard-turn-on transitions per switching cycle are also analyzed along with the three-step and four-step commutation schemes that are essential for the CSC commutation cells. Finally, the different schemes are evaluated and compared through the experimental results of a 10 kW, 480 VRMS, LL/ (400 − 800) V AC/DC system.

Bidirectional switches, four-quadrant switches, cu↗
DOE OSTI2023

Engineering of Grain Boundaries in CeO 2 Enabling Tailorable Resistive Switching Properties

Abstract Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of engineering large numbers of grain boundaries on resistive switching mechanisms and performances is investigated. Three different grain morphologies, that is, “random network,” “columnar scaffold,” and “island‐like,” are realized in CeO 2 thin films. The devices with the three grain morphologies demonstrate vastly different resistive switching behaviors. The best overall resistive switching performance is shown in the devices with “columnar scaffold” morphology, where the vertical grain boundaries extending through the film facilitate the generation of oxygen vacancies as well as their migration under external bias. The observation of both interfacial and filamentary switching modes only in the devices with a “columnar scaffold” morphology further confirms the contribution from grain boundaries. In contrast, the “random network” or “island‐like” structures result in excessive or insufficient oxygen vacancy concentration migration paths. The research provides design guidelines for grain boundary engineering of oxide‐based resistive switching materials to tune the resistive switching performances for memory and neuromorphic computing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

In operando cryo-STEM of pulse-induced charge density wave switching in TaS 2

The charge density wave material 1T-TaS 2 exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS 2 devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we operate a 2-terminal TaS 2 device within a scanning transmission electron microscope at cryogenic temperature, and directly visualize the changing charge density wave structure with nanoscale spatial resolution and down to 300 μs temporal resolution. We show that the pulse-induced transition is driven by Joule heating, and that the pulse-induced state corresponds to the nearly commensurate and incommensurate charge density wave phases, depending on the applied voltage amplitude. With our in operando cryogenic electron microscopy experiments, we directly correlate the charge density wave structure with the device resistance, and show that dislocations significantly impact device performance. This work resolves fundamental questions of resistive switching in TaS 2 devices, critical for engineering reliable and scalable TaS 2 electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene

Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning, preventing parallel programming of ANN arrays. Electrochemical random-access memories (ECRAMs), where resistive switching occurs by ion insertion into a redox-active channel, aim to address these challenges due to their linear switching and low noise. ECRAMs using 2D materials and metal oxides however suffer from slow ion kinetics, whereas organic ECRAMs enable high-speed operation but face challenges toward on-chip integration due to poor temperature stability of polymers. Here, ECRAMs using 2D titanium carbide (Ti 3 C 2 T x ) MXene that combine the high speed of organics and the integration compatibility of inorganic materials in a single high-performance device are demonstrated. These ECRAMs combine the speed, linearity, write noise, switching energy, and endurance metrics essential for parallel acceleration of ANNs, and importantly, they are stable after heat treatment needed for back-end-of-line integration with Si electronics. The high speed and performance of these ECRAMs introduces MXenes, a large family of 2D carbides and nitrides with more than 30 stoichiometric compositions synthesized to date, as promising candidates for devices operating at the nexus of electrochemistry and electronics.

2D materials↗
DOE OSTI2023

All‐Liquid Reconfigurable Electronics Using Jammed MXene Interfaces

Abstract Rigid, solid‐state components represent the current paradigm for electronic systems, but they lack post‐production reconfigurability and pose ever‐increasing challenges to efficient end‐of‐life recycling. Liquid electronics may overcome these limitations by offering flexible in‐the‐field redesign and separation at end‐of‐life via simple liquid phase chemistries. Up to now, preliminary work on liquid electronics has focused on liquid metal components, but these devices still require an encapsulating polymer and typically use alloys of rare elements like indium. Here, using the self‐assembly of jammed 2D titanium carbide (Ti 3 C 2 T x ) MXene nanoparticles at liquid–liquid interfaces, “all‐liquid” electrically conductive sheets, wires, and simple functional devices are described including electromechanical switches and photodetectors. These assemblies combine the high conductivity of MXene nanosheets with the controllable form and reconfigurability of structured liquids. Such configurations can have applications not only in electronics, but also in catalysis and microfluidics, especially in systems where the product and substrate have affinity for solvents of differing polarity.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗
DOE OSTI2025

Characterization of fluorite-structured ferroelectrics using transmission electron microscopy: Techniques, challenges, and recent advances

Fluorite-structured ferroelectrics, such as hafnium oxide and its alloyed variants, are key candidates for next-generation memory devices. Yet, fundamental questions about switching mechanisms, domain dynamics, and phase evolution remain open. Transmission electron microscopy (TEM) provides unique capabilities to address these challenges by simultaneously resolving the positions of anions and cations, chemical variations, and structural transformations. Recent advances—including in situ heating, electron beam-induced switching, electron energy loss spectroscopy, and differential phase contrast imaging—have revealed critical insights into phase transitions, potential switching pathways, and oxygen vacancy behavior. However, experimental barriers such as TEM sample-preparation-induced artifacts, high coercive fields, and imaging constraints persist, especially for polycrystalline films. By offering a focused overview of current TEM developments in fluorite ferroelectrics, this work outlines how TEM contributes to understanding key phenomena and proposes a roadmap for future studies.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Improved Frequency-Domain Steady-State Modeling of the Dual-Active-Bridge Converter Considering Finite ZVS Transition Time Effects

This article presents an improved analytical modeling (IAM) approach for the dual-active-bridge (DAB) converter in the frequency-domain. Specifically, finite transition times are incorporated into the improved modeling that are significant in DAB converters operated at high frequency. The IAM approach is first motivated by comparing traditional frequency-domain modeling against realistic simulation results in LTspice. Next, the IAM approach is mathematically developed in an iterative fashion, where the conventional frequency-domain approach is used as the initialization of the operational behavior of the converter. Subsequent iterations of the IAM algorithm incorporate finite rise- and falltimes of device output capacitances based on detailed switching behavior analyses, which may considerably perturb the desired modulation parameters (i.e., phase shift and zero states). While the initially proposed IAM approach demonstrates advantages over ideal modeling, it is still shown to exhibit errors when applied to device transitions with significant nonlinearity in parasitic output capacitance. To account for this, a three-slope approximation to the switching transition is then motivated and developed, which enables significantly improved steady-state prediction accuracy. Simulation and experimental results confirm unacceptable inaccuracies associated with the conventional frequency-domain modeling across a wide range of operating conditions, alongside enhanced accuracy provided by the proposed modeling approach.

14 SOLAR ENERGY↗
DOE OSTI2021

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,2′-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VO 2 -Based Neuromorphic Devices

In order to make neuromorphic functions in memristive devices more efficient, information about the structural properties of filament formation at the micro- and mesoscopic scales is necessary. Despite extensive research on VO 2 , a key material due to its filament formation, local operando structural measurements remain challenging and often involve destructive specimen preparation and long rastering times, greatly limiting the scope of experimental studies. Utilizing dark-field X-ray microscopy (DFXM), a fullfield imaging modality, structural signatures of the filament formation process operando are revealed in VO 2 devices. DFXM experiments illustrate that rutile filaments contain isolated monoclinic clusters, indicating structural nonuniformity interior to the filament. The formation of the rutile phase beneath device electrodes was shown to precede filament development, followed by the formation of filament paths guided by nucleation sites within the device. Finally, a medium-term (<30 min) memory mechanism is observed in VO 2 , mediated by sites within the device gap that tend to switch at significantly lower voltages after electrical cycling, a tendency that persists through a brief thermal reset. High spatial resolution, large field-of-view, structure selectivity, and fast signal acquisition of DFXM provided insight into structural features of the filamentary channel and surrounding regions during voltage cycling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Wake-up and fatigue mechanisms in ferroelectric Hf 0.5 Zr 0.5 O 2 films with symmetric RuO 2 electrodes

In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO 2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 10 3 bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 10 8 cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations and domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO 2 -based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗